講演・口頭発表等 - 中塚 理
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Control of Schottky barrier height of metal/Ge contact using group-IV alloy interlayers 国際会議
JSPS Meeting 2016 : Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration"
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Characterization of Deep-Level Defects in Ge1-xSnx Epitaxial Layers using Deep Level Transient Spectroscopy 国際会議
The 7th International Symposium on Advanced Science and Technology of Silicon Materials (7th JSPS Silicon Symposium)
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Microwave Annealing for Low-Thermal Budget Process of Nickel Monogermanide/Germanium Contact Formation 国際会議
Advanced Metallization Conference 2016: 26th Asian Session (ADMETA Plus 2016)
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Low Temperature Crystallization of SiSn Binary Alloys 招待有り 国際会議
The 1st International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-1)
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Analysis of Microscopic Strain and Crystalline Structure in Ge/Ge1-xSnx Fine Structures By Using Synchrotron X-Ray Microdiffraction 国際会議
Pacific Rim Meeting 2016 Joint The 230th Electrochemical Society Meeting (PRiME 2016/230th ECS Meeting)
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Growth of Heavily Doped n-Ge Epitaxial Layer by In situ Phosphorus-doping with Low-temperature Metal-Organic Chemical Vapor Deposition 国際会議
2016 International Conference on Solid State Devices and Materials (SSDM 2016)
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Effect of N bonding structure in AlON on leakage current of 4H-SiC MOS capacitor 国際会議
2016 International Conference on Solid State Devices and Materials (SSDM 2016)
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Investigation of effects of inner stress with Sn incorporation on energy band of Si1-xSnx using density functional theory and photoelectron spectroscopy 国際会議
2016 International Conference on Solid State Devices and Materials (SSDM 2016)
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Heavy Sb-doping for poly-GeSn on insulator using pulsed laser annealing in water 国際会議
2016 International Conference on Solid State Devices and Materials (SSDM 2016)
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Impact of SixGe1-x-ySny interlayer on reduction in Schottky barrier height of metal/n-Ge contact 国際会議
2016 International Conference on Solid State Devices and Materials (SSDM 2016)
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Challenges in Engineering Materials Properties for GeSn Nanoelectronics 招待有り 国際会議
The 2016 European Materials Research Society (E-MRS) Fall Meeting
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Low-Temperature Selective Epitaxial Growth of Ge on Si by using Metal Organic Chemical Vapor Deposition 国際会議
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
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Growth and applications of GeSn-related group-IV semiconductor materials 招待有り 国際会議
IEEE 2016 Summer Topicals Meeting Series
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Control of the Fermi level pinning position at metal/Ge interface by using Ge1-xSnx interlayer 国際会議
7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)
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Direct Measurement of Anisotropic Local Strain in Ge Nanostructures Strained with MOCVD-grown Ge1-xSnx by using Microdiffraction 国際会議
7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)
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Electrical and Optical Properties Improvement of GeSn Layers Formed at High Temperature under Well-controlled Sn Migration 国際会議
7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)
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Effect of local and global strain on thermal stability of Sn in GeSn based film 国際会議
7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)
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Si1-xGex Bulk Single Crystals for Substrates of Electronic Devices 国際会議
7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)
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Formation and Characterization of GeSiSn/GeSn/GeSiSn Double-Heterostructure with Strain-controlled GeSiSn layer 国際会議
7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)
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Interfacial Energy Control for Low-Temperature Crystallization of Ge-rich GeSn Layers on Insulating Substrate 国際会議
7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)