講演・口頭発表等 - 中塚 理
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Influence of Ge Substrate Orientation on Crystalline Structures of Ge1-xSnx Epitaxial Layers 国際会議
T. Asano, S. Kidowaki, M. Kurosawa, N. Taoka, O. Nakatsuka, S. Zaima
The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
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Epitaxial Growth of Strained Ge Layer on Si1-xGex Substrate Formed with Traveling Liquidus-Zone Method 国際会議
T. Yamaha, O. Nakatsuka, N. Taoka, K. Kinoshita, S. Yoda, S. Zaima
The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
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Crystalline Phase Control of Pr-Oxide Films by Regulating Oxidant Partial Pressure and Si Diffusion 国際会議
K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima
The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
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Formation and Characterization of Locally Strained Ge1-xSnx/Ge Microstructures 国際会議
S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, S. Zaima
The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
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Electrical Activity of Threading Dislocations and Defect Complexes in GeSn Epitaxial Layers 国際会議
S. Gupta, E. Simoen, T. Asano, O. Nakatsuka, F. Gencarelli, Y. Shimura, A. Moussa, R. Loo, S. Zaima, B. Baert, A. Dobri, N. D. Nguyen, M. Heyns
The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
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Incorporation of a Vacancy with an Sn Atom in Epitaxial Ge1-xSnx Film Growth at Lower Temperature 国際会議
E. Kamiyama, K. Sueoka, O. Nakatsuka, N. Taoka, S. Zaima, K. Izunome, K. Kashima
The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
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Lateral Growth Enhancement of Poly-Ge1-xSnx on SiO2 using a Eutectic Reaction 国際会議
M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, S. Zaima
The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
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Control of Al2O3/Ge interfacial structures by post oxidation technique using oxygen radical 国際会議
K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima
5rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)
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Defects introduced in germanium substrate by reactive ion etching 国際会議
Kusumandari, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, S. Zaima
5rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)
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Formation and Stress Characterization of NiGe/Ge(110) and Ge(001) Contacts 国際会議
Y. Deng, J. Yokoi, O. Nakatsuka and S. Zaima
Advanced Metallization Conference 2012: 22nd Asian Session (ADMETA Plus 2012)
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Impedance Spectroscopy of GeSn/Ge Heterostructures by a Numerical Method 国際会議
B. Baert, O. Nakatsuka, S. Zaima and N. Nguyen
The Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2012) Joint International 222nd ECS Meeting
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Growth and Characterization of Heteroepitaxial Layers of Ge1-x-ySixSny Ternary Alloy 国際会議
T. Yamaha, O. Nakatsuka, S. Takeuchi, W. Takeuchi, N. Taoka, K. Araki, K. Izunome and S. Zaima
The Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2012) Joint International 222nd ECS Meeting
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Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a High Sn Content 国際会議
S. Zaima, O. Nakatsuka, M. Nakamura, W. Takeuchi, Y. Shimura and N. Taoka
The Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2012) Joint International 222nd ECS Meeting
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Potential of GeSn Alloys for Application to Future Nanoelectronics 国際会議
O. Nakatsuka, and S. Zaima
The 6th Kentingan Physics Forum (the 6th KPF): International Conference on Physics and Its Applications (ICOPIA)
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Increase of Si0.5Ge0.5 Bulk Single Crystal Size as Substrates for Strained Ge Epitaxial Layers 国際会議
K. Kinoshita, O. Nakatsuka, Y. Arai, K. Taguchi, H. Tomioka, R. Tanaka and S. Yoda
2012 International Conference on Solid State Devices and Materials (SSDM 2012)
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Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical 国際会議
K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
2012 International Conference on Solid State Devices and Materials (SSDM 2012)
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High Mobility Poly-GeSn Layer Formed by Low Temperature Solid Phase Crystallization 国際会議
W. Takeuchi, N. Taoka, M. Kurosawa, M. Fukutome, M. Sakashita, O. Nakatsuka, and S. Zaima
2012 International Conference on Solid State Devices and Materials (SSDM 2012)
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Impact of Sn corporation on Epitaxial Growth of Ge Layers on Si(110) Substrates 国際会議
S. Kidowaki, T. Asano, Y. Shimura, N. Taoka, O. Nakatsuka and S. Zaima
2012 International Conference on Solid State Devices and Materials (SSDM 2012)
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In situ Sb doping in Ge1-xSnx Epitaxial Layers with High Sn Contents 国際会議
K. Hozaki, M. Nakamura, Y. Shimura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
International Union of Materials Research Societies-International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012)
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Electrical Properties of Epitaxially Grown p+-Ge1-xSnx/n-Ge Diodes 国際会議
S. Asaba, J. Yokoi, H. Matsuhita, Y. Deng, N. Taoka, O. Nakatsuka, and S. Zaima
International Union of Materials Research Societies-International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012)