講演・口頭発表等 - 中塚 理
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パターン加工されたGe/Si1-xGex/Si(001)構造におけるGe層一軸性伸張歪構造の評価
水谷卓也,湯川勝規,中塚理,近藤博基,酒井朗,小川正毅,財満鎭明
第55回応用物理学関係連合講演会
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Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge1-xSnx Layers on Ge(001) Substrates 国際会議
M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima
Fifth International Symposium on Control of Semiconductor Interfaces
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Defect Control for Ge/Si and Ge1-xSnx/Ge/Si Heterostructures 国際会議
A. Sakai, S. Takeuchi, O. Nakatsuka, M. Ogawa, and S. Zaima,
Fifth International Symposium on Control of Semiconductor Interfaces
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Characterization of Local Strains in Si1-xGex Hetero-mesa Structures on Si(001) Substrates by Using X-ray Microdiffraction 国際会議
O. Nakatsuka, K. Yukawa, S. Mochizuki, A. Sakai, K. Fukuda, S. Kimura, O. Sakata, K. Izunome, T. Senda, E. Toyoda, M. Ogawa, and S. Zaima
Fifth International Symposium on Control of Semiconductor Interfaces
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Controlling Interface Properties of Silicide/Si Contacts for Si ULSI Applications 国際会議
S. Zaima, O. Nakatsuka, A. Sakai, and M. Ogawa
9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
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Effect of alcohol sources on synthesis of single-walled carbon nanotubes 国際会議
S. Oida, A. Sakai, O. Nakatuska, M. Ogawa, and S. Zaima
9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
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Growth and Characterization of Tensile-Strained Ge Layers on Strain Relaxed Ge1-xSnx Buffer Layers 国際会議
O. Nakatsuka, S. Takeuchi, A. Sakai, M. Ogawa, and S. Zaima
The 3nd international workshop on new group IV semiconductor nanoelectronics
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Tensile Strained Ge Layers Grown on Compositionally Step-Graded Ge1-xSnx Buffer Layers 国際会議
Y. Shimura, S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima
The 3nd international workshop on new group IV semiconductor nanoelectronics
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Electrical and Crystalline Properties of Epitaxial NiSi2/Si Contacts Fromed in Ni/Ti/Si(001) Systems 国際会議
O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa, and S. Zaima
The Sixth Pacific Rim International Conference on Advanced Materials and Processing
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Contact Propeties of Epitaxial NiSi2/Heavily Doped Si Structures Formed from Ni/Ti/Si Systems 国際会議
S. Akimoto, O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, and S. Zaima
Advanced Metallization Conference 2007: 17th Asian Session
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Silicide and Germanide Technology for Contacts and Metal Gates in MOSFET Applications 国際会議
S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, and M. Ogawa
212th Electrochemical Society Meeting
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Pr-Oxide-Based Dielectric Films on Ge Substrates 国際会議
M. Sakashita, N. Kito, A. Sakai, H. Kondo, O. Nakatsuka, M. Ogawa and S. Zaima
2007 International Conference on Solid State Devices and Materials
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Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System 国際会議
O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa, and S. Zaima
2007 International Conference on Solid State Devices and Materials
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Strain and dislocations in group IV semiconductor heterostructures 国際会議
A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima
Materials Research Society 2007 Spring Meeting
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Si1-xGex/Si(001)構造における転位および歪の評価と制御技術
中塚理,酒井朗,近藤博基,小川正毅,財満鎭明
2007年 電子情報通信学会 エレクトロニクスソサエティ大会
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Direct Silicon Bonding (DSB) 基板の接合界面および結晶性の評価
豊田英二,酒井朗3,磯貝宏道,仙田剛士,泉妻宏治,表和彦,中塚理,小川正毅,財満鎭明
第68回応用物理学会学術講演会
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ホットフィラメントCVD法による単層カーボンナノチューブ成長様式のアルコール種依存性
種田智,酒井朗,中塚理,小川正毅,財満鎭明
第68回応用物理学会学術講演会
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Ge(001)基板上におけるGe1-xSnx初期成長形態の走査トンネル顕微鏡評価
山崎理弘,竹内正太郎1,中塚理,酒井朗,小川正毅,財満鎭明
第68回応用物理学会学術講演会
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階段状組成傾斜法を用いた伸張歪Ge/歪緩和Ge1-xSnx層/仮想Ge基板構造の形成
志村洋介,竹内正太郎,酒井朗,中塚理,小川正毅,財満鎭明
第68回応用物理学会学術講演会
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Impact of Pt Incorporation on Thermal Stability of NiGe Layers on Ge(001) Substrates 国際会議
O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, and S. Zaima
7th International Workshop on Junction Technology 2007, pp. 87-88, Kyoto, Japan, June 8-9, 2007.