講演・口頭発表等 - 中塚 理
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Growth of Two Inch Si0.5Ge0.5 Bulk Single Crystals 国際会議
K. Kinoshita, Y. Arai, O. Nakatsuka, K. Taguchi, H. Tomioka, R. Tanaka and S. Yoda
2014 International Conference on Solid State Devices and Materials (SSDM 2014)
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Impact of Hydrogen Surfactant Epitaxy and Annealing on Crystallinity of Epitaxial Ge1-xSnx Layers 国際会議
T. Asano, N. Taoka, K. Hozaki, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima
2014 International Conference on Solid State Devices and Materials (SSDM 2014)
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Mobility behavior of Si1-x-yGexSny polycrystals grown on insulators 国際会議
T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
International Union of Materials Research Societies - International Conference in Asia 2014 (IUMRS-ICA 2014)
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Transformation of Defects Structure in Germanium by Sn Ion Implantation 国際会議
W. Takeuchi, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima
International Union of Materials Research Societies - International Conference in Asia 2014 (IUMRS-ICA 2014)
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Crystalline Growth and Characterization of Group-IV Ternary Alloy Thin Films for Solar Cell 国際会議
T. Yamaha, K. Terasawa, T. Terashima, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
Grand Renewable Energy 2014 International Conference and Exhibition
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Low temperature growth of SiSn polycrystals with high Sn contents on insulating layers 国際会議
M. Kurosawa, M. Kato, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima
International SiGe Technology and Device Meeting 2014 (ISTDM 2014)
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Impact of Sn incorporation on low temperature growth of polycrystalline-Si1-xGex layers on insulators 国際会議
T. Yamaha, T. Ohmura, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
International SiGe Technology and Device Meeting 2014 (ISTDM 2014)
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Epitaxial growth and crystalline properties of Ge1-x-ySixSny Layers on Ge(001) Substrates 国際会議
T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
International SiGe Technology and Device Meeting 2014 (ISTDM 2014)
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Crystal growth of Sn-related group-IV alloy thin films for advanced silicon nanoelectronics 国際会議
S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, T. Asano, T. Yamaha, and W. Takauchi
International SiGe Technology and Device Meeting 2014 (ISTDM 2014)
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Growth and crystalline properties of Ge1-x-ySnxCy ternary alloy thin films on Ge(001) substrate 国際会議
K. Terasawa, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, E. Kamiyama, R. Matsutani, R. Suwa, K. Kashima, K. Izunome, K. Sueoka, and S. Zaima
International SiGe Technology and Device Meeting 2014 (ISTDM 2014)
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Impact of crystalline structure on electrical property of NiGe/Ge contact 国際会議
Y. Deng, O. Nakatsuka, N. Taoka, S. Zaima
International SiGe Technology and Device Meeting 2014 (ISTDM 2014)
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Formation and Electrical Properties of Metal/Ge1-xSnx Contacts 国際会議
O. Nakatsuka, T. Nishimura, A. Suzuki, K. Kato, Y. Deng, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, and S. Zaima
14th International Workshop on Junction Technology (IWJT 2014)
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Strain Distributions at Edge of Corner in Bonded Si in Chip-on-Wafer Structures 国際会議
N. Taoka, O. Nakatsuka, Y. Mizushima, H. Kitada, Y. S. Kim, T. Nakamura, T. Ohba, and S. Zaima
Materials for Advanced metallization (MAM 2014)
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Formation and Electrical Property of Epitaxial NiGe/Ge(110) Schottky Contacts 国際会議
Y. Deng, O. Nakatsuka, N. Taoka and S. Zaima
7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar
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Sn-assisted low temperature crystallization of polycrystalline Ge1-xSnx thin-films on insulating surfaces 国際会議
M. Kurosawa, T. Yamaha, W. Takeuchi, N. Taoka, O. Nakatsuka, H. Ikenoue, and S. Zaima
7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar
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Substrate Orientation Dependence of Crystalline Structures of Epitaxial GeSn Layers 国際会議
T. Asano, S. Kidowaki, M. Kurosawa, N. Taoka, O. Nakatsuka and S. Zaima
7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar
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Characterization of Crystalline Structures of SiGe Substrate Formed by Traveling Liquidus-Zone Method and Fabrication of Strained Ge Layer 国際会議
T. Yamaha, O. Nakatsuka, N. Taoka, K. Kinoshita, S. Yoda and S. Zaima
7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar
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Sn-related Group-IV semiconductor materials for electronic and optoelectronic applications 国際会議
O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
3rd international Conference on Nanotek and Expo (Nanotek-2013)
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Development of Ge1-xSn and Ge1-x-ySixSny thin film materials for future electronic applications 国際会議
O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, K. Kato, W. Takeuchi, M. Sakashita, and S. Zaima
8th International Conference on Processing & Manufacturing of Advanced Materials (THERMEC' 2013)
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Quantitative Guideline for Formation of Ge MOS Interface with Low Interface State Density 国際会議
S. Shibayama, K. Kato, N. Taoka, M. Sakashita, O. Nakatsuka, S. Zaima
2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - (IWDTF 2013)