研究者詳細 - 堤　隆嘉

論文 - 堤　隆嘉

分割表示 72 件中 61 - 72 件目／全件表示 >>

Investigation of the radially resolved oxygen dissociation degree and local mean electron energy in oxygen plasmas in contact with different surface materials 査読有り

T. Tsutsumi, A. Greb, A. R. Gibson, M. Hori, D. O'Connell, T. Gans

Journal of Applied Physics 121 巻 ( 14 ) 頁： 143301 2017年4月

Electron behaviors in afterglow of synchronized dc-imposed pulsed fluorocarbon-based plasmas 査読有り

T. Ueyama, Y. Fukunaga, T. Tsutsumi, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine, M. Iwata, Y. Ohya, H. Sugai, M. Hori

Japanese Journal of Applied Physics 56 巻 ( 6S2 ) 頁： 06HC03 2017年3月

Absolute density of precursor SiH₃ radicals and H atoms in H2-diluted SiH₄ gas plasma for deposition of microcrystalline silicon films 査読有り

Y. Abe, K. Ishikawa, K. Takeda, T. Tsutsumi, A. Fukushima, H. Kondo, M. Sekine, M. Hori

Applied Physics Letters 110 巻 ( 4 ) 頁： 043902 2017年1月

Advanced Plasma Etching Processing: Atomic Layer Etching for Nanoscale Devices 査読有り

T. Tsutsumi, M. Zaitsu, A. Kobayashi, N. Kobayashi, M. Hori

PLASMA NANO SCIENCE AND TECHNOLOGY 77 巻 ( 3 ) 頁： 25 - 28 2017年

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）出版者・発行元：ELECTROCHEMICAL SOC INC

Plasma processes for deposition and etching are required for development of the next generation semiconductor devices. To achieve high performance of nanoscale devices, the continuous development of fabrication processes is necessary. An atomic layer etching (ALE) process achieves this continuous development, since the process has advantages such as more precise, higher controllability and repeatability. We have developed ALE process for SiO2 to achieve high controllability and repeatability. The ALE process is a cyclic process composed of two steps: a first step which deposits a fluorocarbon film on the SiO2 surface using an Ar/C4F8 plasma, followed by an O-2 plasma etching step. The O-2 plasma etching suppresses forming a carbon-rich film on the target material surface and maintains the chamber conditions by removing the fluorocarbon on the chamber walls. The ALE process for SiO2 exhibits high reproducibility and has the potential to allow uniform EPC values over large wafer surfaces.

DOI： 10.1149/07703.0025ecst

Web of Science

Atomic layer etching of SiO₂ by alternating an O₂ plasma with fluorocarbon film deposition 査読有り

T. Tsutsumi, H. Kondo, M. Hori, M. Zaitsu, A. Kobayashi, T. Nozawa, N. Kobayashi

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35 巻 ( 1 ) 頁： 01A103 2016年11月

The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD 査読有り

B. B. Sahu, Y. Y. Yin, T. Tsutsumi, M. Hori, Jeon G. Han

Physical Chemistry Chemical Physics 18 巻 ( 18 ) 頁： 13033 2016年4月

Control of Internal Plasma Parameters Toward Atomic Level Processing 査読有り

M. Sekine, T. Tsutsumi, Y. Fukunaga, K. Takeda, H. Kondo, K. Ishikawa, M. Hori

ECS Transactions 75 巻 ( 6 ) 頁： 21 2016年

Real-time temperature-monitoring of Si substrate during plasma processing and its heat-flux analysis 査読有り

T. Tsutsumi, K. Ishikawa, K. Takeda, H. Kondo, T. Ohta, M. Ito, M. Sekine, M. Hori

Japanese Journal of Applied Physics 55 巻 ( 1S ) 頁： 01AB04 2015年11月

Feedback Control System of Wafer Temperature for Advanced Plasma Processing and its Application to Organic Film Etching 査読有り

T. Tsutsumi, Y. Fukunaga, K. Ishikawa, K. Takeda, H. Kondo, T. Ohta, M. Ito, M. Sekine, M. Hori

IEEE Transactions on Semiconductor Manufacturing 28 巻 ( 4 ) 頁： 515 2015年8月

Wavelength Dependence for Silicon-Wafer Temperature Measurement by Autocorrelation-type Frequency-Domain Low-Coherence Interferometry 査読有り

T. Tsutsumi, T. Ohta, K Takeda, M. Ito, M. Hori

Applied Optics 54 巻 ( 23 ) 頁： 7088 2015年8月

Robust characteristics of semiconductor-substrate temperature-measurement method using auto-correlation type frequency-domain low-coherence interferometry 査読有り

T. Tsutsumi, T. Ohta, K. Ishikawa, K. Takeda, H. Kondo, M. Sekine, M. Hori, M. Ito

Japanese Journal of Applied Physics 54 巻 ( 1S ) 頁： 01AB03 2014年11月

Rapid measurement of substrate temperatures by frequency-domain low-coherence interferometry 査読有り

T. Tsutsumi, T. Ohta, K. Ishikawa, K. Takeda, H. Kondo, M. Sekine, M. Hori, M. Ito

Applied Physics Letters 103 巻 ( 18 ) 頁： 182102 2013年10月

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