研究者詳細 - 堤　隆嘉

Kaneko Toshiro, Kato Hiromitsu, Yamada Hideaki, Yamamoto Muneaki, Yoshida Tomoko, Attri Pankaj, Koga Kazunori, Murakami Tomoyuki, Kuchitsu Kazuyuki, Ando Sugihiro, Nishikawa Yasuhiro, Tomita Kentaro, Ono Ryo, Ito Tsuyohito, Ito Atsushi M., Eriguchi Koji, Nozaki Tomohiro, Tsutsumi Takayoshi, Ishikawa Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SA ) 2022年1月

On the Etching Mechanism of Highly Hydrogenated SiN Films by CF4/D2 Plasma: Comparison with CF4/H2

Hsiao, SN; Nguyen, TTN; Tsutsumi, T; Ishikawa, K; Sekine, M; Hori, M

COATINGS 11 巻 ( 12 ) 2021年12月

Reaction Mechanism and Selectivity Control of Si Compound ALE Based on Plasma Modification and F-Radical Exposure

Vervuurt R. H. J., Mukherjee B., Nakane K., Tsutsumi T., Hori M., Kobayashi N.

LANGMUIR 37 巻 ( 43 ) 頁： 12663 - 12672 2021年11月

Effects of hydrogen content in films on the etching of LPCVD and PECVD SiN films using CF4/H-2 plasma at different substrate temperatures 査読有り

Hsiao Shih-Nan, Britun Nikolay, Thi-Thuy-Nga Nguyen, Tsutsumi Takayoshi, Ishikawa Kenji, Sekine Makoto, Hori Masaru

PLASMA PROCESSES AND POLYMERS 2021年8月

Influences of substrate temperatures on etch rates of PECVD-SiN thin films with a CF4/H-2 plasma 査読有り

Hsiao Shih-Nan, Nakane Kazuya, Tsutsumi Takayoshi, Ishikawa Kenji, Sekine Makoto, Hori Masaru

APPLIED SURFACE SCIENCE 542 巻 2021年3月

Selective etching of SiN against SiO2 and poly-Si films in hydrofluoroethane chemistry with a mixture of CH2FCHF2, O-2, and Ar 査読有り

Hsiao Shih-Nan, Ishikawa Kenji, Hayashi Toshio, Ni Jiwei, Tsutsumi Takayoshi, Sekine Makoto, Hori Masaru

APPLIED SURFACE SCIENCE 541 巻 2021年3月

Reaction science of layer-by-layer thinning of graphene with oxygen neutrals at room temperature 査読有り

Sugiura Hirotsugu, Kondo Hiroki, Higuchi Kimitaka, Arai Shigeo, Hamaji Ryo, Tsutsumi Takayoshi, Ishikawa Kenji, Hori Masaru

CARBON 170 巻頁： 93 - 99 2020年12月

Formation of spherical Sn particles by reducing SnO2 film in floating wire-assisted H-2/Ar plasma at atmospheric pressure 査読有り

Thi-Thuy-Nga Nguyen, Sasaki Minoru, Tsutsumi Takayoshi, Ishikawa Kenji, Hori Masaru

SCIENTIFIC REPORTS 10 巻 ( 1 ) 2020年10月

Measurements of nitrogen atom density in a microwave-excited plasma jet produced under moderate pressures 査読有り

Kim Jaeho, Takeda Keigo, Itagaki Hirotomo, Wang Xue-lun, Hirose Shingo, Ogiso Hisato, Shimizu Tetsuji, Kumagai Naoto, Tsutsumi Takayoshi, Kondo Hiroki, Hori Masaru, Sakakita Hajime

IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING 15 巻 ( 9 ) 頁： 1281 - 1287 2020年9月

Numerical analysis of coaxial dielectric barrier helium discharges: three-stage mode transitions and internal bullet propagation 査読有り

Sato Yosuke, Ishikawa Kenji, Tsutsumi Takayoshi, Hori Masaru

APPLIED PHYSICS EXPRESS 13 巻 ( 8 ) 頁： . 2020年8月

Atomic nitrogen density measurements by actinometry method in the toroidal device NAGDIS-T 査読有り

Kajita Shin, Asaoka Koji, Tanaka Hirohiko, Nishio Ryosuke, Tsutsumi Takayoshi, Hori Masaru, Ohno Noriyasu

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( 8 ) 頁： . 2020年8月

In situ surface analysis of an ion-energy-dependent chlorination layer on GaN during cyclic etching using Ar+ ions and Cl radicals 査読有り

Hasegawa Masaki, Tsutsumi Takayoshi, Tanide Atsushi, Nakamura Shohei, Kondo Hiroki, Ishikawa Kenji, Sekine Makoto, Hori Masaru

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 38 巻 ( 4 ) 2020年7月

Numerical simulations of stable, high-electron-density atmospheric pressure argon plasma under pin-to-plane electrode geometry: effects of applied voltage polarity 査読有り

Yosuke Sato, Kenji Ishikawa, Takayoshi Tsutsumi, Akio Ui, Masato Akita, Shotaro Oka, Masaru Hori

Journal of Physics D: Applied Physics 2020年4月

Generation and Diagnostics of Ambient Air Glow Discharge in Centimeter-Order Gaps 査読有り

Gamaleev Vladislav, Tsutsumi Takayoshi, Hiramatsu Mined, Ito Masafumi, Hori Masaru

IEEE ACCESS 8 巻頁： 72607 - 72619 2020年4月

Electron and negative ion dynamics in a pulsed 100 MHz capacitive discharge produced in an O-2 and Ar/O-2/C4F8 gas mixture 査読有り

Sirse N., Tsutsumi T., Sekine M., Hori M., Ellingboe A. R.

PLASMA SOURCES SCIENCE & TECHNOLOGY 29 巻 ( 3 ) 2020年3月

Interaction of oxygen with polystyrene and polyethylene polymer films: A mechanistic study 査読有り

Fukunaga Yusuke, Longo Roberto C., Ventzek Peter L. G., Lane Barton, Ranjan Alok, Hwang Gyeong S., Hartmann Greg, Tsutsumi Takayoshi, Ishikawa Kenji, Kondo Hiroki, Sekine Makoto, Hori Masaru

JOURNAL OF APPLIED PHYSICS 127 巻 ( 2 ) 2020年1月

Etching characteristics of PECVD-prepared SiN films with CF4/D2 and CF4/H2 plasmas at different temperatures

Hsiao, SN; Nguyen, TTN; Tsutsumi, T; Ishikawa, K; Sekine, M; Hori, M

2020 INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING (ISSM) 2020年

Gas-phase and film analysis of hydrogenated amorphous carbon films: Effect of ion bombardment energy flux on sp2 carbon structures 査読有り

Hirotsugu Sugiura, Yasuyuki Ohashi, Kenji Ishikawa, Hiroki Kondo, Toshiaki Kato, Toshiro Kaneko, Keigo Takeda, Takayoshi Tsutsumi, Toshio Hayashi, Makoto Sekine, Masaru Hori

Diamond and Related Materials 104 巻頁： 107651 2019年12月

In Situ Monitoring of Surface Reactions during Atomic Layer Etching of Silicon Nitride Using Hydrogen Plasma and Fluorine Radicals 査読有り

Nakane Kazuya, Vervuurt Rene H. J., Tsutsumi Takayoshi, Kobayashi Nobuyoshi, Hori Masaru

ACS APPLIED MATERIALS & INTERFACES 11 巻 ( 40 ) 頁： 37263 - 37269 2019年10月

Gene Expression of Osteoblast-like Cells on Carbon-Nanowall as Scaffolds during Incubation with Electrical Stimulation 査読有り

Ichikawa, T; Kondo, H; Ishikawa, K; Tsutsumi, T; Tanaka, H; Sekine, M; Hori, M

ACS APPLIED BIO MATERIALS 2 巻 ( 7 ) 頁： 2698 - 2702 2019年7月

Progress and perspectives in dry processes for emerging multidisciplinary applications: how can we improve our use of dry processes? 査読有り

Iwase Taku, Kamaji Yoshito, Kang Song Yun, Koga Kazunori, Kuboi Nobuyuki, Nakamura Moritaka, Negishi Nobuyuki, Nozaki Tomohiro, Nunomura Shota, Ogawa Daisuke, Omura Mitsuhiro, Shimizu Tetsuji, Shinoda Kazunori, Sonoda Yasushi, Suzuki Haruka, Takahashi Kazuo, Tsutsumi Takayoshi, Yoshikawa Kenichi, Ishijima Tatsuo, Ishikawa Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月

Progress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formation 査読有り

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月

Progress and perspectives in dry processes for leading-edge manufacturing of devices: toward intelligent processes and virtual product development 査読有り

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月

Facile synthesis of SnO2-graphene composites employing nonthermal plasma and SnO2 nanoparticles-dispersed ethanol 査読有り

Borude Ranjit R., Sugiura Hirotsugu, Ishikawa Kenji, Tsutsumi Takayoshi, Kondo Hiroki, Hori Masaru

JOURNAL OF PHYSICS D-APPLIED PHYSICS 52 巻 ( 17 ) 2019年4月

Effects of 3D structure on electrochemical oxygen reduction characteristics of Pt- nanoparticle-supported carbon nanowalls

Imai, S; Naito, K; Kondo, H; Cho, HJ; Ishikawa, K; Tsutsumi, T; Sekine, M; Hiramatsu, M; Hori, M

JOURNAL OF PHYSICS D-APPLIED PHYSICS 52 巻 ( 10 ) 頁： 105503 - 105503 2019年3月

Real-time control of a wafer temperature for uniform plasma process

T. Tsutsumi, Y. Fuknaga, K. Ishikawa, H. Kondo, M. Sekine, M. Hori

2018 International Symposium on Semiconductor Manufacturing 2019年2月

Remotely floating wire-assisted generation of high-density atmospheric pressure plasma and SF6-added plasma etching of quartz glass

Nguyen, TTN; Sasaki, M; Odaka, H; Tsutsumi, T; Ishikawa, K; Hori, M

JOURNAL OF APPLIED PHYSICS 125 巻 ( 6 ) 頁： 063304 - 063304 2019年2月

Liquid dynamics in response to an impinging low-temperature plasma jet

Brubaker, TR; Ishikawa, K; Kondo, H; Tsutsumi, T; Hashizume, H; Tanaka, H; Knecht, SD; Bilén, SG; Hori, M

JOURNAL OF PHYSICS D-APPLIED PHYSICS 52 巻 ( 7 ) 2019年2月

Control of sp2-C cluster incorporation of amorphous carbon films grown by H-radical-injection CH4/H2 plasma-enhanced chemical vapor deposition 査読有り

Hirotsugu Sugiura, Lingyun Jia, Yasuyuki Ohashi, Hiroki Kondo, Kenji Ishikawa, Takayoshi Tsutsumi, Toshio Hayashi, Keigo Takeda, Makoto Sekine, Masaru Hori

Japanese Journal of Applied Physics 58 巻 ( 3 ) 頁： 030912 2019年2月

Single-Step, Low-Temperature Simultaneous Formations and in Situ Binding of Tin Oxide Nanoparticles to Graphene Nanosheets by In-Liquid Plasma for Potential Applications in Gas Sensing and Lithium-Ion Batteries 査読有り

Ranjit R. Borude, Hirotsugu Sugiura, Kenji Ishikawa, Takayoshi Tsutsumi, Hiroki Kondo, Nobuyuki Ikarashi, Masaru Hori

ACS Appplied Nano Materials 2 巻 ( 2 ) 頁： 649-654 2019年2月

Effect of electrical stimulation on proliferation and bone-formation by osteoblast-like cells cultured on carbon nanowalls scaffolds

Ichikawa, T; Tanaka, S; Kondo, H; Ishikawa, K; Tsutsumi, T; Sekine, M; Hori, M

APPLIED PHYSICS EXPRESS 12 巻 ( 2 ) 2019年2月

Narrow free-standing features fabricated by top-down self-limited trimming of organic materials using precisely temperature-controlled plasma etching system

Fukunaga, Y; Tsutsumi, T; Kondo, H; Ishikawa, K; Sekine, M; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 2 ) 2019年2月

Modifications of surface and bulk properties of magnetron-sputtered carbon films employing a post-treatment of atmospheric pressure plasma 査読有り

Borude Ranjit R., Sugiura Hirotsugu, Ishikawa Kenji, Tsutsumi Takayoshi, Kondo Hiroki, Han Jeon Geon, Hori Masaru

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SA ) 2019年2月

Effects of Ion Bombardment Energy Flux on Chemical Compositions and Structures of Hydrogenated Amorphous Carbon Films Grown by a Radical-Injection Plasma-Enhanced Chemical Vapor Deposition 査読有り

H. Sugiura, H. Kondo, T. Tsutsumi, K. Ishikawa, M. Hori

C 5 巻 ( 1 ) 頁： 8 2019年1月

Electrochemical Reaction in Hydrogen Peroxide and Structural Change of Platinum Nanoparticle-Supported Carbon Nanowalls Grown Using Plasma-Enhanced Chemical Vapor Deposition 査読有り

Masakazu Tomatsu , Mineo Hiramatsu, Hiroki Kondo, Kenji Ishikawa, Takayoshi Tsutsumi, Makoto Sekine, Masaru Hori

C 5 巻 ( 1 ) 頁： 7 2019年1月

Polyethylene terephthalate (PET) surface modification by VUV and neutral active species in remote oxygen or hydrogen plasmas 査読有り

Yan Zhang, Kenji Ishikawa, Miran Mozetič, Takayoshi Tsutsumi, Hiroki Kondo, Makoto Sekine, Masaru Hori

Plasma Processes and Polymers 2019年1月

Pt nanoparticle-supported carbon nanowalls electrode with improved durability for fuel cell applications using C2F6/H2 plasma-enhanced chemical vapor deposition

Imai, S; Kondo, H; Hyungjun, C; Ishikawa, K; Tsutsumi, T; Sekine, M; Hiramatsu, M; Hori, M

APPLIED PHYSICS EXPRESS 12 巻 ( 1 ) 2019年1月

Reaction mechanisms between chlorine plasma and a spin-on-type polymer mask for high-temperature plasma etching 査読有り

Zhang Yan, Imamura Masato, Ishikawa Kenji, Tsutsumi Takayoshi, Kondo Hiroki, Sekine Makoto, Hori Masaru

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 10 ) 2018年10月

Temperature dependence on plasma-induced damage and chemical reactions in GaN etching processes using chlorine plasma 査読有り

Zecheng Liu, Kenji Ishikawa, Masato Imamura, Takayoshi Tsutsumi, Hiroki Kondo, Osamu Oda, Makoto Sekine, Masaru Hori

Japanese Journal of Applied Physics 57 巻 ( 6 ) 2018年6月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）出版者・発行元：Japan Society of Applied Physics

Plasma-induced damage (PID) on GaN was optimally reduced by high-temperature chlorine plasma etching. Energetic ion bombardments primarily induced PID involving stoichiometry, surface roughness, and photoluminescence (PL) degradation. Chemical reactions under ultraviolet (UV) irradiation and chlorine radical exposure at temperatures higher than 400 °C can be controlled by taking into account the synergism of simultaneous photon and radical irradiations to effectively reduce PID.

DOI： 10.7567/JJAP.57.06JD01

Web of Science

Scopus

Effects of gas residence time of CH4/H2 on sp2 fraction of amorphous carbon films and dissociated methyl density during radical-injection plasma-enhanced chemical vapor deposition 査読有り

Hirotsugu Sugiura, Lingyun Jia, Hiroki Kondo, Kenji Ishikawa, Takayoshi Tsutsumi, Toshio Hayashi, Keigo Takeda, Makoto Sekine, Masaru Hori

Japanese Journal of Applied Physics 57 巻 ( 6 ) 2018年6月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）出版者・発行元：Japan Society of Applied Physics

Quadruple mass spectrometric measurements of CH3 density during radical-injection plasma-enhanced chemical vapor deposition to consider the sp2 fraction of amorphous carbon (a-C) films were performed. The sp2 fraction of the a-C films reached a minimum of 46%, where the CH3 density was maximum for a residence time of 6 ms. The sp2 fraction of the a-C films was tailored with the gaseous phase CH3 density during the deposition. This knowledge is useful for understanding the formation mechanism of bonding structures in the a-C films, which enables the precise control of their electronic properties.

DOI： 10.7567/JJAP.57.06JE03

Web of Science

Scopus

Nanographene synthesis employing in-liquid plasmas with alcohols or hydrocarbons 査読有り

Atsushi Ando, Kenji Ishikawa, Hiroki Kondo, Takayoshi Tsutsumi, Keigo Takeda, Takayuki Ohta, Masafumi Ito, Mineo Hiramatsu, Makoto Sekine, Masaru Hori

Japanese Journal of Applied Physics 57 巻 ( 2 ) 2018年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japan Society of Applied Physics

Graphenes of nanometer-scale grain size (nanographenes) were synthesized using in-liquid plasmas with alcohols or hydrocarbons. This method of nanographene synthesis showed a trade-off relationship between crystallinity and synthesis rate. The high crystallinity of nanographenes synthesized with alcohols was evaluated from the small full width at half maxima (FWHM) of the G band in Raman scattering spectra. On the other hand, in the case of using hydrocarbons such as n-hexane and benzene, a significantly high synthesis rate was obtained but the crystallinity of nanographenes was low. It was found that hydroxyl groups and oxygen atoms of liquid sources play important roles in determining the crystallinity of synthesized nanographenes.

DOI： 10.7567/JJAP.57.026201

Web of Science

Scopus

Rapid growth of micron-sized graphene flakes using in-liquid plasma employing iron phthalocyanine-added ethanol 査読有り

Tomoki Amano, Hiroki Kondo, Kenji Ishikawa, Takayoshi Tsutsumi, Keigo Takeda, Mineo Hiramatsu, Makoto Sekine, Masaru Hori

Applied Physics Express 11 巻 ( 1 ) 2018年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japan Society of Applied Physics

Giant graphene flakes on the micron scale were synthesized and grown in plasmas in liquid-phase pure ethanol with added iron phthalocyanine (FePc) in a solvent. At atmospheric pressure, plasmas were generated in the gas phase filled with Ar and in the liquid phases comprising bubbles and liquid solutions. In the mixture of FePc in ethanol, nanographene sheets aggregated to form giant graphene flakes, as confirmed by the D, G, and 2D bands in the corresponding Raman spectra. Therefore, a bottom-up approach of graphite synthesis from pure ethanol with additives and a catalyst was realized by in-liquid plasma processing.

DOI： 10.7567/APEX.11.015102

Web of Science

Scopus

Real-time control of a wafer temperature for uniform plasma process

Tsutsumi, T; Fuknaga, Y; Ishikawa, K; Kondo, H; Sekine, M; Hori, M

2018 INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING (ISSM) 頁： . 2018年

Measurement of F-, O- and CF3- densities in 60 and 100 MHz asymmetric capacitively coupled plasma discharge produced in an Ar/O2/C4F8 gas mixture 査読有り

N. Sirse, T. Tsutsumi, M. Sekine, M. Hori, A. R. Ellingboe

Journal of Physics D: Applied Physics 50 巻 ( 33 ) 頁： 335205 2017年7月

Temperature dependence of protection layer formation on organic trench sidewall in H2/N2 plasma etching with control of substrate temperature 査読有り

Y. Fukunaga, T. Tsutsumi, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine, M. Hori

Japanese Journal of Applied Physics 56 巻 ( 7 ) 頁： 076202 2017年6月

Investigation of the radially resolved oxygen dissociation degree and local mean electron energy in oxygen plasmas in contact with different surface materials 査読有り

T. Tsutsumi, A. Greb, A. R. Gibson, M. Hori, D. O'Connell, T. Gans

Journal of Applied Physics 121 巻 ( 14 ) 頁： 143301 2017年4月

Electron behaviors in afterglow of synchronized dc-imposed pulsed fluorocarbon-based plasmas 査読有り

T. Ueyama, Y. Fukunaga, T. Tsutsumi, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine, M. Iwata, Y. Ohya, H. Sugai, M. Hori

Japanese Journal of Applied Physics 56 巻 ( 6S2 ) 頁： 06HC03 2017年3月

Absolute density of precursor SiH₃ radicals and H atoms in H2-diluted SiH₄ gas plasma for deposition of microcrystalline silicon films 査読有り

Y. Abe, K. Ishikawa, K. Takeda, T. Tsutsumi, A. Fukushima, H. Kondo, M. Sekine, M. Hori

Applied Physics Letters 110 巻 ( 4 ) 頁： 043902 2017年1月

Advanced Plasma Etching Processing: Atomic Layer Etching for Nanoscale Devices 査読有り

T. Tsutsumi, M. Zaitsu, A. Kobayashi, N. Kobayashi, M. Hori

PLASMA NANO SCIENCE AND TECHNOLOGY 77 巻 ( 3 ) 頁： 25 - 28 2017年

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）出版者・発行元：ELECTROCHEMICAL SOC INC

Plasma processes for deposition and etching are required for development of the next generation semiconductor devices. To achieve high performance of nanoscale devices, the continuous development of fabrication processes is necessary. An atomic layer etching (ALE) process achieves this continuous development, since the process has advantages such as more precise, higher controllability and repeatability. We have developed ALE process for SiO2 to achieve high controllability and repeatability. The ALE process is a cyclic process composed of two steps: a first step which deposits a fluorocarbon film on the SiO2 surface using an Ar/C4F8 plasma, followed by an O-2 plasma etching step. The O-2 plasma etching suppresses forming a carbon-rich film on the target material surface and maintains the chamber conditions by removing the fluorocarbon on the chamber walls. The ALE process for SiO2 exhibits high reproducibility and has the potential to allow uniform EPC values over large wafer surfaces.

DOI： 10.1149/07703.0025ecst

Web of Science

Atomic layer etching of SiO₂ by alternating an O₂ plasma with fluorocarbon film deposition 査読有り

T. Tsutsumi, H. Kondo, M. Hori, M. Zaitsu, A. Kobayashi, T. Nozawa, N. Kobayashi

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35 巻 ( 1 ) 頁： 01A103 2016年11月

The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD 査読有り

B. B. Sahu, Y. Y. Yin, T. Tsutsumi, M. Hori, Jeon G. Han

Physical Chemistry Chemical Physics 18 巻 ( 18 ) 頁： 13033 2016年4月

Control of Internal Plasma Parameters Toward Atomic Level Processing 査読有り

M. Sekine, T. Tsutsumi, Y. Fukunaga, K. Takeda, H. Kondo, K. Ishikawa, M. Hori

ECS Transactions 75 巻 ( 6 ) 頁： 21 2016年

Real-time temperature-monitoring of Si substrate during plasma processing and its heat-flux analysis 査読有り

T. Tsutsumi, K. Ishikawa, K. Takeda, H. Kondo, T. Ohta, M. Ito, M. Sekine, M. Hori

Japanese Journal of Applied Physics 55 巻 ( 1S ) 頁： 01AB04 2015年11月

Feedback Control System of Wafer Temperature for Advanced Plasma Processing and its Application to Organic Film Etching 査読有り

T. Tsutsumi, Y. Fukunaga, K. Ishikawa, K. Takeda, H. Kondo, T. Ohta, M. Ito, M. Sekine, M. Hori

IEEE Transactions on Semiconductor Manufacturing 28 巻 ( 4 ) 頁： 515 2015年8月

Wavelength Dependence for Silicon-Wafer Temperature Measurement by Autocorrelation-type Frequency-Domain Low-Coherence Interferometry 査読有り

T. Tsutsumi, T. Ohta, K Takeda, M. Ito, M. Hori

Applied Optics 54 巻 ( 23 ) 頁： 7088 2015年8月

Robust characteristics of semiconductor-substrate temperature-measurement method using auto-correlation type frequency-domain low-coherence interferometry 査読有り

T. Tsutsumi, T. Ohta, K. Ishikawa, K. Takeda, H. Kondo, M. Sekine, M. Hori, M. Ito

Japanese Journal of Applied Physics 54 巻 ( 1S ) 頁： 01AB03 2014年11月

Rapid measurement of substrate temperatures by frequency-domain low-coherence interferometry 査読有り

T. Tsutsumi, T. Ohta, K. Ishikawa, K. Takeda, H. Kondo, M. Sekine, M. Hori, M. Ito

Applied Physics Letters 103 巻 ( 18 ) 頁： 182102 2013年10月

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