論文 - PRISTOVSEK Markus
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Development of semipolar (11-22) LEDs on GaN templates 査読有り
Corbett B., Quan Z., Dinh D. V., Kozlowski G., O'Mahony D., Akhter M., Schulz S., Parbrook P., Maaskant P., Caliebe M., Hocker M., Thonke K., Scholz F., Pristovsek M., Han Y., Humphreys C. J., Brunner F., Weyers M., Meyer T. M., Lymperakis L.
LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XX 9768 巻 2016年
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Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes 査読有り
Mehnke Frank, Kuhn Christian, Stellmach Joachim, Kolbe Tim, Lobo-Ploch Neysha, Rass Jens, Rothe Mark-Antonius, Reich Christoph, Ledentsov Nikolay Jr., Pristovsek Markus, Wernicke Tim, Kneissl Michael
JOURNAL OF APPLIED PHYSICS 117 巻 ( 19 ) 2015年5月
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Low defect large area semi-polar (11(2)over-bar2) GaN grown on patterned (113) silicon 査読有り
Pristovsek Markus, Han Yisong, Zhu Tongtong, Frentrup Martin, Kappers Menno J., Humphreys Colin J., Kozlowski Grzegorz, Maaskant Pleun, Corbett Brian
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 252 巻 ( 5 ) 頁： 1104-1108 2015年5月
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Origin of faceted surface hillocks on semi-polar (11(2)over-bar2) GaN templates grown on pre-structured sapphire 査読有り
Han Yisong, Caliebe Marian, Kappers Menno, Scholz Ferdinand, Pristovsek Markus, Humphreys Colin
JOURNAL OF CRYSTAL GROWTH 415 巻 頁： 170-175 2015年4月
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Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers 査読有り
Skuridina D., Dinh D. V., Pristovsek M., Lacroix B., Chauvat M. -P., Ruterana P., Kneissl M., Vogt P.
APPLIED SURFACE SCIENCE 307 巻 頁： 461-467 2014年7月
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Polarity determination of polar and semipolar (11(2)over-bar2) InN and GaN layers by valence band photoemission spectroscopy 査読有り
Skuridina D., Dinh D. V., Lacroix B., Ruterana P., Hoffmann M., Sitar Z., Pristovsek M., Kneissl M., Vogt P.
JOURNAL OF APPLIED PHYSICS 114 巻 ( 17 ) 2013年11月
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Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy 査読有り
Dinh Duc V., Skuridina D., Solopow S., Pristovsek M., Vogt P., Kneissl M.
JOURNAL OF CRYSTAL GROWTH 376 巻 頁： 17-22 2013年8月
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Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal-Organic Vapor Phase Epitaxy 査読有り
Dinh Duc V., Solopow Sergej, Pristovsek Markus, Kneissl Michael
JAPANESE JOURNAL OF APPLIED PHYSICS 52 巻 ( 8 ) 2013年8月
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Surface Transitions During InGaN Growth on GaN(0001) in Metal-Organic Vapor Phase Epitaxy 査読有り
Pristovsek Markus, Kadir Abdul, Kneissl Michael
JAPANESE JOURNAL OF APPLIED PHYSICS 52 巻 ( 8 ) 2013年8月
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Wavelength limits for InGaN quantum wells on GaN 査読有り
Pristovsek Markus
APPLIED PHYSICS LETTERS 102 巻 ( 24 ) 2013年6月
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Growth mode transition and relaxation of thin InGaN layers on GaN (0001) 査読有り
Pristovsek Markus, Kadir Abdul, Meissner Christian, Schwaner Tilman, Leyer Martin, Stellmach Joachim, Kneissl Michael, Ivaldi Francesco, Kret Slawomir
JOURNAL OF CRYSTAL GROWTH 372 巻 頁： 65-72 2013年6月
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Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001) 査読有り
Pristovsek Markus, Kremzow Raimund, Kneissl Michael
JAPANESE JOURNAL OF APPLIED PHYSICS 52 巻 ( 4 ) 2013年4月
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Structural and optical properties of semipolar (11(2)over-bar2) AlGaN grown on (10(1)over-bar0) sapphire by metal-organic vapor phase epitaxy 査読有り
Stellmach J., Mehnke F., Frentrup M., Reich C., Schlegel J., Pristovsek M., Wernicke T., Kneissl M.
JOURNAL OF CRYSTAL GROWTH 367 巻 頁： 42-47 2013年3月
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Interface and Surface Dielectric Anisotropies of GaP/Si(100) 査読有り
Supplie O., Hannappel T., Pristovsek M., Doescher H.
2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 頁： 137-+ 2013年
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Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE 査読有り
Kadir Abdul, Bellmann Konrad, Simoneit Tino, Pristovsek Markus, Kneissl Michael
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 209 巻 ( 12 ) 頁： 2487-2491 2012年12月
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Indium incorporation efficiency and critical layer thickness of (20(2)over-bar1) InGaN layers on GaN 査読有り
Ploch Simon, Wernicke Tim, Frentrup Martin, Pristovsek Markus, Weyers Markus, Kneissl Michael
APPLIED PHYSICS LETTERS 101 巻 ( 20 ) 2012年11月
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Topography of (20(2)over-bar1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy 査読有り
Ploch Simon, Wernicke Tim, Thalmair Johannes, Lohr Matthias, Pristovsek Markus, Zweck Josef, Weyers Markus, Kneissl Michael
JOURNAL OF CRYSTAL GROWTH 356 巻 頁： 70-74 2012年10月
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MOVPE growth of semipolar (11(2)over-bar2) AIN on m-plane (10(1)over-bar0) sapphire 査読有り
Stellmach J., Frentrup M., Mehnke F., Pristovsek M., Wernicke T., Kneissl M.
JOURNAL OF CRYSTAL GROWTH 355 巻 ( 1 ) 頁： 59-62 2012年9月
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In situ access to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces 査読有り
Supplie Oliver, Hannappel Thomas, Pristovsek Markus, Doescher Henning
PHYSICAL REVIEW B 86 巻 ( 3 ) 2012年7月
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Growth and characterizations of semipolar (11(2)over-bar2) InN 査読有り
Dinh Duc V., Skuridina D., Solopow S., Frentrup M., Pristovsek M., Vogt P., Kneissl M., Ivaldi F., Kret S., Szczepanska A.
JOURNAL OF APPLIED PHYSICS 112 巻 ( 1 ) 2012年7月