研究者詳細 - PRISTOVSEK Markus

論文 - PRISTOVSEK Markus

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Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 10 ) 2018年10月

High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire

Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

JOURNAL OF CRYSTAL GROWTH 498 巻頁： 377 - 380 2018年9月

Reduction of Residual Impurities in Homoepitaxial m-Plane (10(1)over-bar0) GaN by Using N-2 Carrier Gas in Metalorganic Vapor Phase Epitaxy

Barry Ousmane I., Lekhal Kaddour, Bae Si-Young, Lee Ho-Jun, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 12 巻 ( 8 ) 2018年8月

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

Robin Y., Bae S. Y., Shubina T. V., Pristovsek M., Evropeitsev E. A., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Jmerik V. N., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

SCIENTIFIC REPORTS 8 巻 ( 1 ) 2018年5月

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Nagamatsu Kentaro, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS 11 巻 ( 5 ) 2018年5月

Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy 査読有り

Yang Xu, Nitta Shugo, Nagamatsu Kentaro, Bae Si-Young, Lee Ho-Jun, Liu Yuhuai, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH 482 巻頁： 1 - 8 2018年1月

Structural and optical properties of Gd implanted GaN with various crystallographic orientations 査読有り

A. Mackova, P. Malinsky, A. Jagerova, Z. Sofer, K. Klimova, D. Sedmidubsky, M. Pristovsek, M. Mikulics, J. Lorincik, R. Boettger, S. Akhmadaliev

THIN SOLID FILMS 638 巻頁： 63 - 72 2017年9月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ELSEVIER SCIENCE SA

Structure, morphology, and optical properties of Gd implanted GaN epitaxial layers were studied for (0001), (11-20), and (11-22) orientations. The GaN layers grown by MOVPE on sapphire were subsequently implanted with 200 keV Gd+ ions using fluences of 5 x 10(15) and 5 x 10(16) cm(-2). Dopant depth profiling was accomplished by Rutherford Back-Scattering spectrometry (RBS). Structural and optical changes during subsequent annealing were characterized by RBS, Raman spectroscopy, and photoluminescence measurements. Post-implantation annealing induced a structural reorganization of GaN structure in the buried layer depending on the introduced disorder level, i.e. depending on the implantation fluence and on crystallographic orientation. The defect density depth distribution was evaluated by RBS. The surface morphology and optical properties depend on particular crystallographic orientation. (C) 2017 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.tsf.2017.07.036

Web of Science

Surface reconstructions of (0001) AlN during metal-organic vapor phase epitaxy 査読有り

Pristovsek Markus, Bellman Konrad, Mehnke Frank, Stellmach Joachim, Wernicke Tim, Kneissl Michael

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 254 巻 ( 8 ) 2017年8月

Effects of Wavelength and Defect Density on the Efficiency of (In, Ga) N-Based Light-Emitting Diodes 査読有り

Pristovsek Markus, Bao An, Oliver Rachel A., Badcock Tom, Ali Muhammad, Shields Andrew

PHYSICAL REVIEW APPLIED 7 巻 ( 6 ) 2017年6月

Development of Sustainable Smart Society based on Transformative Electronics

Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pristovsek M., Kawai H., Yagi S., Amano H.

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2017年

Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures 査読有り

Badcock T. J., Ali M., Zhu T., Pristovsek M., Oliver R. A., Shields A. J.

APPLIED PHYSICS LETTERS 109 巻 ( 15 ) 2016年10月

Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence 査読有り

Hocker Matthias, Maier Pascal, Jerg Lisa, Tischer Ingo, Neusser Gregor, Kranz Christine, Pristovsek Markus, Humphreys Colin J., Leute Robert A. R., Heinz Dominik, Rettig Oliver, Scholz Ferdinand, Thonke Klaus

JOURNAL OF APPLIED PHYSICS 120 巻 ( 8 ) 2016年8月

Deoxidation of (001) III-V semiconductors in metal-organic vapour phase epitaxy 査読有り

Kaspari Christian, Pristovsek Markus, Richter Wolfgang

JOURNAL OF APPLIED PHYSICS 120 巻 ( 8 ) 2016年8月

Structural and optical properties of (11(2)over-bar2) InGaN quantum wells compared to (0001) and (11(2)over-bar0) 査読有り

Pristovsek Markus, Han Yisong, Zhu Tongtong, Oehler Fabrice, Tang Fengzai, Oliver Rachel A., Humphreys Colin J., Tytko Darius, Choi Pyuck-Pa, Raabe Dierk, Brunner Frank, Weyers Markus

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 31 巻 ( 8 ) 2016年8月

The impact of the surface on step-bunching and diffusion of Ga on GaAs (001) in metal-organic vapour phase epitaxy 査読有り

Pristovsek Markus, Poser Florian, Richter Wolfgang

MATERIALS RESEARCH EXPRESS 3 巻 ( 7 ) 2016年7月

Toward defect-free semi-polar GaN templates on pre-structured sapphire 査読有り

Han Yisong, Caliebe Marian, Hage Fredrik, Ramasse Quentin, Pristovsek Markus, Zhu Tongtong, Scholz Ferdinand, Humphreys Colin

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 253 巻 ( 5 ) 頁： 834-839 2016年5月

Comparative study of (0001) and (11(2)over-bar2) InGaN based light emitting diodes 査読有り

Pristovsek Markus, Humphreys Colin J., Bauer Sebastian, Knab Manuel, Thonke Klaus, Kozlowski Grzegorz, O'Mahony Donagh, Maaskant Pleun, Corbett Brian

JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 5 ) 2016年5月

MOVPE growth and indium incorporation of polar, semipolar (11(2)over-bar2) and (20(2)over-bar21) InGaN 査読有り

Dinh Duc V., Pristovsek Markus, Kneissl Michael

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 253 巻 ( 1 ) 頁： 93-98 2016年1月

Optimizing GaN (11(2)over-bar2) hetero-epitaxial templates grown on (10(1)over-bar0) sapphire 査読有り

Pristovsek Markus, Frentrup Martin, Han Yisong, Humphreys Colin J.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 253 巻 ( 1 ) 頁： 61-66 2016年1月

Breakdown of the Green Gap in (0001) InGaN LEDs 査読有り

Pristovsek Markus, Oliver Rachel A., Badcock Tom, Ali Muhammad, Shields Andrew

2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) 頁： . 2016年

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