論文 - PRISTOVSEK Markus
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Impact of graphene state on the orientation of III–nitride 査読有り 国際共著
Jeong-Hwan Park, Nan Hu, Mun-Do Park, Jia Wang, Xu Yang, Dong-Seon Lee, Hiroshi Amano, Markus Pristovsek
Applied Physics Letters 123 巻 ( 12 ) 頁： 121601 2023年9月
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Growth of N-Polar (0001(-)) GaN in Metal-Organic Vapour Phase Epitaxy on Sapphire 招待有り 査読有り 国際共著
Pristovsek Markus, Furuhashi Itsuki, Pampili Pietro
13 巻 ( 7 ) 頁： 1072 2023年7月
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Stress relaxation of AlGaN on nonpolar m-plane GaN substrate 査読有り 国際共著
Lin Yingying, Sena Hadi, Frentrup Martin, Pristovsek Markus, Honda Yoshio, Amano Hiroshi
JOURNAL OF APPLIED PHYSICS 133 巻 ( 22 ) 頁： 225702 2023年6月
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Dislocation Suppresses Sidewall-Surface Recombination of Micro-LEDs 査読有り 国際共著 国際誌
Park Jeong-Hwan, Pristovsek Markus, Cai Wentao, Cheong Heajeong, Kang Chang-Mo, Lee Dong-Seon, Seong Tae-Yeon, Amano Hiroshi
LASER & PHOTONICS REVIEWS 2023年6月
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Impact of Sidewall Conditions on Internal Quantum Efficiency and Light Extraction Efficiency of Micro-LEDs 国際共著
Park Jeong-Hwan, Pristovsek Markus, Cai Wentao, Cheong Heajeong, Tanaka Atsushi, Furusawa Yuta, Han Dong-Pyo, Seong Tae-Yeon, Amano Hiroshi
ADVANCED OPTICAL MATERIALS 11 巻 ( 10 ) 頁： 2370029 2023年5月
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2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters 国際共著
Jmerik Valentin, Nechaev Dmitrii, Semenov Alexey, Evropeitsev Eugenii, Shubina Tatiana, Toropov Alexey, Yagovkina Maria, Alekseev Prokhor, Borodin Bogdan, Orekhova Kseniya, Kozlovsky Vladimir, Zverev Mikhail, Gamov Nikita, Wang Tao, Wang Xinqiang, Pristovsek Markus, Amano Hiroshi, Ivanov Sergey
NANOMATERIALS 13 巻 ( 6 ) 頁： 1077 2023年3月
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Red emission from InGaN active layer grown on nanoscale InGaN pseudosubstrates 査読有り
Wentao Cai, Jia Wang, Jeong-Hwan Park, Yuta Furusawa, Heajeong Cheong, Shugo Nitta, Yoshio Honda, Markus Pristovsek, Hiroshi Amano
Japanese Journal of Applied Physics 62 巻 ( 2 ) 頁： 020902 2023年2月
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Direct Determination of the Internal Quantum Efficiency of Light-Emitting Diodes 査読有り
Pristovsek Markus
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 17 巻 ( 1 ) 頁： 2200331 2023年1月
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Wurtzite Al1-xGaxPyN1-y barrier layer growth for high electron mobility transistors 査読有り
Pristovsek Markus
JOURNAL OF CRYSTAL GROWTH 600 巻 頁： 126908 2022年12月
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High In content nitride sub-micrometer platelet arrays for long wavelength optical applications
Cai Wentao, Furusawa Yuta, Wang Jia, Park Jeong-Hwan, Liao Yaqiang, Cheong Hea-Jeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi
APPLIED PHYSICS LETTERS 121 巻 ( 21 ) 2022年11月
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Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal-organic vapor phase epitaxy 査読有り 国際共著
Hu Nan, Avit Geoffrey, Pristovsek Markus, Honda Yoshio, Amano Hiroshi
APPLIED PHYSICS LETTERS 121 巻 ( 8 ) 頁： 082106 2022年8月
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Interplay of sidewall damage and light extraction efficiency of micro-LEDs
Park Jeong-Hwan, Pristovsek Markus, Cai Wentao, Cheong Heajeong, Kumabe Takeru, Lee Dong-Seon, Seong Tae-Yeon, Amano Hiroshi
OPTICS LETTERS 47 巻 ( 9 ) 頁： 2250 - 2253 2022年5月
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Defect characterization of {10(1)over-bar3) GaN by electron microscopy 査読有り 国際共著 国際誌
Kusch Gunnar, Frentrup Martin, Hu Nan, Amano Hiroshi, Oliver Rachel A., Pristovsek Markus
JOURNAL OF APPLIED PHYSICS 131 巻 ( 1 ) 2022年1月
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X-ray characterisation of the basal stacking fault densities of (1122) GaN
Pristovsek Markus, Frentrup Martin, Zhu Tongtong, Kusch Gunnar, Humphreys Colin J.
CRYSTENGCOMM 23 巻 ( 35 ) 頁： 6059 - 6069 2021年9月
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The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices
Davydov Valery, Roginskii Evgenii M., Kitaev Yuri, Smirnov Alexander, Eliseyev Ilya, Zavarin Eugene, Lundin Wsevolod, Nechaev Dmitrii, Jmerik Valentin, Smirnov Mikhail, Pristovsek Markus, Shubina Tatiana
NANOMATERIALS 11 巻 ( 9 ) 2021年9月
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The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation
Park Jeong-Hwan, Yang Xu, Lee Jun-Yeob, Park Mun-Do, Bae Si-Young, Pristovsek Markus, Amano Hiroshi, Lee Dong-Seon
CHEMICAL SCIENCE 12 巻 ( 22 ) 頁： 7713 - 7719 2021年6月
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A debut for AlPN 招待有り
Markus Pristovsek
compound semiconductor 27 巻 ( 3 ) 頁： 40 - 43 2021年5月
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Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
Avit Geoffrey, Robin Yoann, Liao Yaqiang, Nan Hu, Pristovsek Markus, Amano Hiroshi
SCIENTIFIC REPORTS 11 巻 ( 1 ) 2021年3月
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Wurtzite AlPyN1-y: a new III-V compound semiconductor lattice-matched to GaN (0001)
Pristovsek Markus, van Dinh Duc, Liu Ting, Ikarashi Nobuyuki
APPLIED PHYSICS EXPRESS 13 巻 ( 11 ) 2020年11月
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Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy
Robin Y., Bournet Q., Avit G., Pristovsek M., Andre Y., Trassoudaine A., Amano H.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 35 巻 ( 11 ) 2020年11月
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Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate
Yang Xu, Pristovsek Markus, Nitta Shugo, Liu Yuhuai, Honda Yoshio, Koide Yasuo, Kawarada Hiroshi, Amano Hiroshi
ACS APPLIED MATERIALS & INTERFACES 12 巻 ( 41 ) 頁： 46466 - 46475 2020年10月
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Increasing the Luminescence Efficiency of Long-Wavelength (In,Ga)N Quantum Well Structures by Electric Field Engineering Using an (Al,Ga)N Capping Layer
Vichi Stefano, Robin Yoann, Sanguinetti Stefano, Pristovsek Markus, Amano Hiroshi
PHYSICAL REVIEW APPLIED 14 巻 ( 2 ) 2020年8月
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Pulsed-flow growth of polar, semipolar and nonpolar AlGaN
Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus
JOURNAL OF MATERIALS CHEMISTRY C 8 巻 ( 25 ) 頁： 8668 - 8675 2020年7月
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Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN
Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 35 巻 ( 3 ) 2020年3月
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Analysis of trimethylgallium decomposition by high-resolution mass spectrometry
Ye Zheng, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( 2 ) 2020年2月
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Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism
Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Liao Yaqiang, Kushimoto Maki, Honda Yoshio, Amano Hiroshi
2D MATERIALS 7 巻 ( 1 ) 2020年1月
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Untwinned semipolar (10(1)over-bar3) AlxGa1-xN layers grown on m-plane sapphire
Dinh Duc V., Hu Nan, Amano Hiroshi, Honda Yoshio, Pristovsek Markus
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 34 巻 ( 12 ) 2019年12月
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Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties
Duc V Dinh, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus
SCIENTIFIC REPORTS 9 巻 2019年11月
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Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth
Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH 516 巻 頁： 63 - 66 2019年6月
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Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers
Nan Hu, Dinh Duc V., Pristovsek Markus, Honda Yoshio, Amano Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月
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Monolithic integration of tricolor micro-LEDs and color mixing investigation by analog and digital dimming
Robin Yoann, Hemeret Francois, D'Inca Gillian, Pristovsek Markus, Trassoudaine Agnes, Amano Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月
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Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)
Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH 514 巻 頁： 13 - 13 2019年5月
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Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE
Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH 512 巻 頁： 78 - 83 2019年4月
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Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE
Duc V Dinh, Amano Hiroshi, Pristovsek Markus
JOURNAL OF CRYSTAL GROWTH 512 巻 頁： 100 - 104 2019年4月
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Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy
Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH 509 巻 頁： 50 - 53 2019年3月
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Morphological study of InGaN on GaN substrate by supersaturation
Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH 508 巻 頁： 58 - 65 2019年2月
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How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire
Hu Nan, Dinh Duc V., Pristovsek Markus, Honda Yoshio, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH 507 巻 頁： 205 - 208 2019年2月
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MOVPE growth and high-temperature annealing of (10(1)over-bar0) AlN layers on (10(1)over-bar0) sapphire
Dinh Duc V., Amano Hiroshi, Pristovsek Markus
JOURNAL OF CRYSTAL GROWTH 502 巻 頁： 14 - 18 2018年11月
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What is red? On the chromaticity of orange-red InGaN/GaN based LEDs
Robin Y., Pristovsek M., Amano H., Oehler F., Oliver R. A., Humphreys C. J.
JOURNAL OF APPLIED PHYSICS 124 巻 ( 18 ) 2018年11月
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Simultaneous Growth of Various InGaN/GaN Core-Shell Microstructures for Color Tunable Device Applications
Robin Yoann, Liao Yaqiang, Pristovsek Markus, Amano Hiroshi
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 215 巻 ( 21 ) 2018年11月
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Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy
Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 10 ) 2018年10月
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High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire
Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus
JOURNAL OF CRYSTAL GROWTH 498 巻 頁： 377 - 380 2018年9月
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Reduction of Residual Impurities in Homoepitaxial m-Plane (10(1)over-bar0) GaN by Using N-2 Carrier Gas in Metalorganic Vapor Phase Epitaxy
Barry Ousmane I., Lekhal Kaddour, Bae Si-Young, Lee Ho-Jun, Pristovsek Markus, Honda Yoshio, Amano Hiroshi
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 12 巻 ( 8 ) 2018年8月
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Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
Robin Y., Bae S. Y., Shubina T. V., Pristovsek M., Evropeitsev E. A., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Jmerik V. N., Kushimoto M., Nitta S., Ivanov S. V., Amano H.
SCIENTIFIC REPORTS 8 巻 ( 1 ) 2018年5月
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Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy
Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Nagamatsu Kentaro, Kushimoto Maki, Honda Yoshio, Amano Hiroshi
APPLIED PHYSICS EXPRESS 11 巻 ( 5 ) 2018年5月
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Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy 査読有り
Yang Xu, Nitta Shugo, Nagamatsu Kentaro, Bae Si-Young, Lee Ho-Jun, Liu Yuhuai, Pristovsek Markus, Honda Yoshio, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH 482 巻 頁： 1 - 8 2018年1月
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Structural and optical properties of Gd implanted GaN with various crystallographic orientations 査読有り
A. Mackova, P. Malinsky, A. Jagerova, Z. Sofer, K. Klimova, D. Sedmidubsky, M. Pristovsek, M. Mikulics, J. Lorincik, R. Boettger, S. Akhmadaliev
THIN SOLID FILMS 638 巻 頁： 63 - 72 2017年9月
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Surface reconstructions of (0001) AlN during metal-organic vapor phase epitaxy 査読有り
Pristovsek Markus, Bellman Konrad, Mehnke Frank, Stellmach Joachim, Wernicke Tim, Kneissl Michael
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 254 巻 ( 8 ) 2017年8月
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Effects of Wavelength and Defect Density on the Efficiency of (In, Ga) N-Based Light-Emitting Diodes 査読有り
Pristovsek Markus, Bao An, Oliver Rachel A., Badcock Tom, Ali Muhammad, Shields Andrew
PHYSICAL REVIEW APPLIED 7 巻 ( 6 ) 2017年6月
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Development of Sustainable Smart Society based on Transformative Electronics
Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pristovsek M., Kawai H., Yagi S., Amano H.
2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2017年
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Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures 査読有り
Badcock T. J., Ali M., Zhu T., Pristovsek M., Oliver R. A., Shields A. J.
APPLIED PHYSICS LETTERS 109 巻 ( 15 ) 2016年10月
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Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence 査読有り
Hocker Matthias, Maier Pascal, Jerg Lisa, Tischer Ingo, Neusser Gregor, Kranz Christine, Pristovsek Markus, Humphreys Colin J., Leute Robert A. R., Heinz Dominik, Rettig Oliver, Scholz Ferdinand, Thonke Klaus
JOURNAL OF APPLIED PHYSICS 120 巻 ( 8 ) 2016年8月
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Deoxidation of (001) III-V semiconductors in metal-organic vapour phase epitaxy 査読有り
Kaspari Christian, Pristovsek Markus, Richter Wolfgang
JOURNAL OF APPLIED PHYSICS 120 巻 ( 8 ) 2016年8月
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Structural and optical properties of (11(2)over-bar2) InGaN quantum wells compared to (0001) and (11(2)over-bar0) 査読有り
Pristovsek Markus, Han Yisong, Zhu Tongtong, Oehler Fabrice, Tang Fengzai, Oliver Rachel A., Humphreys Colin J., Tytko Darius, Choi Pyuck-Pa, Raabe Dierk, Brunner Frank, Weyers Markus
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 31 巻 ( 8 ) 2016年8月
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The impact of the surface on step-bunching and diffusion of Ga on GaAs (001) in metal-organic vapour phase epitaxy 査読有り
Pristovsek Markus, Poser Florian, Richter Wolfgang
MATERIALS RESEARCH EXPRESS 3 巻 ( 7 ) 2016年7月
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Toward defect-free semi-polar GaN templates on pre-structured sapphire 査読有り
Han Yisong, Caliebe Marian, Hage Fredrik, Ramasse Quentin, Pristovsek Markus, Zhu Tongtong, Scholz Ferdinand, Humphreys Colin
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 253 巻 ( 5 ) 頁： 834-839 2016年5月
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Comparative study of (0001) and (11(2)over-bar2) InGaN based light emitting diodes 査読有り
Pristovsek Markus, Humphreys Colin J., Bauer Sebastian, Knab Manuel, Thonke Klaus, Kozlowski Grzegorz, O'Mahony Donagh, Maaskant Pleun, Corbett Brian
JAPANESE JOURNAL OF APPLIED PHYSICS 55 巻 ( 5 ) 2016年5月
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MOVPE growth and indium incorporation of polar, semipolar (11(2)over-bar2) and (20(2)over-bar21) InGaN 査読有り
Dinh Duc V., Pristovsek Markus, Kneissl Michael
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 253 巻 ( 1 ) 頁： 93-98 2016年1月
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Optimizing GaN (11(2)over-bar2) hetero-epitaxial templates grown on (10(1)over-bar0) sapphire 査読有り
Pristovsek Markus, Frentrup Martin, Han Yisong, Humphreys Colin J.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 253 巻 ( 1 ) 頁： 61-66 2016年1月
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Breakdown of the Green Gap in (0001) InGaN LEDs 査読有り
Pristovsek Markus, Oliver Rachel A., Badcock Tom, Ali Muhammad, Shields Andrew
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) 頁： . 2016年
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Development of semipolar (11-22) LEDs on GaN templates 査読有り
Corbett B., Quan Z., Dinh D. V., Kozlowski G., O'Mahony D., Akhter M., Schulz S., Parbrook P., Maaskant P., Caliebe M., Hocker M., Thonke K., Scholz F., Pristovsek M., Han Y., Humphreys C. J., Brunner F., Weyers M., Meyer T. M., Lymperakis L.
LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XX 9768 巻 2016年
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Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes 査読有り
Mehnke Frank, Kuhn Christian, Stellmach Joachim, Kolbe Tim, Lobo-Ploch Neysha, Rass Jens, Rothe Mark-Antonius, Reich Christoph, Ledentsov Nikolay Jr., Pristovsek Markus, Wernicke Tim, Kneissl Michael
JOURNAL OF APPLIED PHYSICS 117 巻 ( 19 ) 2015年5月
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Low defect large area semi-polar (11(2)over-bar2) GaN grown on patterned (113) silicon 査読有り
Pristovsek Markus, Han Yisong, Zhu Tongtong, Frentrup Martin, Kappers Menno J., Humphreys Colin J., Kozlowski Grzegorz, Maaskant Pleun, Corbett Brian
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 252 巻 ( 5 ) 頁： 1104-1108 2015年5月
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Origin of faceted surface hillocks on semi-polar (11(2)over-bar2) GaN templates grown on pre-structured sapphire 査読有り
Han Yisong, Caliebe Marian, Kappers Menno, Scholz Ferdinand, Pristovsek Markus, Humphreys Colin
JOURNAL OF CRYSTAL GROWTH 415 巻 頁： 170-175 2015年4月
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Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers 査読有り
Skuridina D., Dinh D. V., Pristovsek M., Lacroix B., Chauvat M. -P., Ruterana P., Kneissl M., Vogt P.
APPLIED SURFACE SCIENCE 307 巻 頁： 461-467 2014年7月
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Polarity determination of polar and semipolar (11(2)over-bar2) InN and GaN layers by valence band photoemission spectroscopy 査読有り
Skuridina D., Dinh D. V., Lacroix B., Ruterana P., Hoffmann M., Sitar Z., Pristovsek M., Kneissl M., Vogt P.
JOURNAL OF APPLIED PHYSICS 114 巻 ( 17 ) 2013年11月
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Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy 査読有り
Dinh Duc V., Skuridina D., Solopow S., Pristovsek M., Vogt P., Kneissl M.
JOURNAL OF CRYSTAL GROWTH 376 巻 頁： 17-22 2013年8月
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Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal-Organic Vapor Phase Epitaxy 査読有り
Dinh Duc V., Solopow Sergej, Pristovsek Markus, Kneissl Michael
JAPANESE JOURNAL OF APPLIED PHYSICS 52 巻 ( 8 ) 2013年8月
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Surface Transitions During InGaN Growth on GaN(0001) in Metal-Organic Vapor Phase Epitaxy 査読有り
Pristovsek Markus, Kadir Abdul, Kneissl Michael
JAPANESE JOURNAL OF APPLIED PHYSICS 52 巻 ( 8 ) 2013年8月
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Wavelength limits for InGaN quantum wells on GaN 査読有り
Pristovsek Markus
APPLIED PHYSICS LETTERS 102 巻 ( 24 ) 2013年6月
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Growth mode transition and relaxation of thin InGaN layers on GaN (0001) 査読有り
Pristovsek Markus, Kadir Abdul, Meissner Christian, Schwaner Tilman, Leyer Martin, Stellmach Joachim, Kneissl Michael, Ivaldi Francesco, Kret Slawomir
JOURNAL OF CRYSTAL GROWTH 372 巻 頁： 65-72 2013年6月
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Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001) 査読有り
Pristovsek Markus, Kremzow Raimund, Kneissl Michael
JAPANESE JOURNAL OF APPLIED PHYSICS 52 巻 ( 4 ) 2013年4月
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Structural and optical properties of semipolar (11(2)over-bar2) AlGaN grown on (10(1)over-bar0) sapphire by metal-organic vapor phase epitaxy 査読有り
Stellmach J., Mehnke F., Frentrup M., Reich C., Schlegel J., Pristovsek M., Wernicke T., Kneissl M.
JOURNAL OF CRYSTAL GROWTH 367 巻 頁： 42-47 2013年3月
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Interface and Surface Dielectric Anisotropies of GaP/Si(100) 査読有り
Supplie O., Hannappel T., Pristovsek M., Doescher H.
2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 頁： 137-+ 2013年
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Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE 査読有り
Kadir Abdul, Bellmann Konrad, Simoneit Tino, Pristovsek Markus, Kneissl Michael
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 209 巻 ( 12 ) 頁： 2487-2491 2012年12月
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Indium incorporation efficiency and critical layer thickness of (20(2)over-bar1) InGaN layers on GaN 査読有り
Ploch Simon, Wernicke Tim, Frentrup Martin, Pristovsek Markus, Weyers Markus, Kneissl Michael
APPLIED PHYSICS LETTERS 101 巻 ( 20 ) 2012年11月
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Topography of (20(2)over-bar1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy 査読有り
Ploch Simon, Wernicke Tim, Thalmair Johannes, Lohr Matthias, Pristovsek Markus, Zweck Josef, Weyers Markus, Kneissl Michael
JOURNAL OF CRYSTAL GROWTH 356 巻 頁： 70-74 2012年10月
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MOVPE growth of semipolar (11(2)over-bar2) AIN on m-plane (10(1)over-bar0) sapphire 査読有り
Stellmach J., Frentrup M., Mehnke F., Pristovsek M., Wernicke T., Kneissl M.
JOURNAL OF CRYSTAL GROWTH 355 巻 ( 1 ) 頁： 59-62 2012年9月
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In situ access to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces 査読有り
Supplie Oliver, Hannappel Thomas, Pristovsek Markus, Doescher Henning
PHYSICAL REVIEW B 86 巻 ( 3 ) 2012年7月
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Growth and characterizations of semipolar (11(2)over-bar2) InN 査読有り
Dinh Duc V., Skuridina D., Solopow S., Frentrup M., Pristovsek M., Vogt P., Kneissl M., Ivaldi F., Kret S., Szczepanska A.
JOURNAL OF APPLIED PHYSICS 112 巻 ( 1 ) 2012年7月
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Surface diffusion and layer morphology of (11(2)over-bar2) GaN grown by metal-organic vapor phase epitaxy 査読有り
Ploch Simon, Wernicke Tim, Dinh Duc V., Pristovsek Markus, Kneissl Michael
JOURNAL OF APPLIED PHYSICS 111 巻 ( 3 ) 2012年2月
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Comparison study of N- and In-polar {0001} InN layers grown by MOVPE 査読有り
Dinh Duc V., Pristovsek M., Solopow S., Skuridina D., Kneissl M.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 9 巻 ( 3-4 ) 頁： 977-981 2012年
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Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy 査読有り
Kadir Abdul, Meissner Christian, Schwaner Tilman, Pristovsek Markus, Kneissl Michael
JOURNAL OF CRYSTAL GROWTH 334 巻 ( 1 ) 頁： 40-45 2011年11月
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Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy 査読有り
Pristovsek Markus, Kadir Abdul, Meissner Christian, Schwaner Tilman, Leyer Martin, Kneissl Michael
JOURNAL OF APPLIED PHYSICS 110 巻 ( 7 ) 2011年10月
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Single phase {11(2)over-bar2} GaN on (10(1)over-bar0) sapphire grown by metal-organic vapor phase epitaxy 査読有り
Ploch Simon, Park Jae Bum, Stellmach Joachim, Schwaner Tilman, Frentrup Martin, Niermann Tore, Wernicke Tim, Pristovsek Markus, Lehmann Michael, Kneissl Michael
JOURNAL OF CRYSTAL GROWTH 331 巻 ( 1 ) 頁： 25-28 2011年9月
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Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal-Organic Vapour Phase Epitaxy 査読有り
Ivaldi Francesco, Meissner Christian, Domagala Jaroslaw, Kret Slawomir, Pristovsek Markus, Hoegele Michael, Kneissl Michael
JAPANESE JOURNAL OF APPLIED PHYSICS 50 巻 ( 3 ) 2011年3月
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Crystal orientation of GaN layers on (10(1)over-bar0) m-plane sapphire 査読有り
Frentrup Martin, Ploch Simon, Pristovsek Markus, Kneissl Michael
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 248 巻 ( 3 ) 頁： 583-587 2011年3月
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High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor 査読有り
Stellmach J., Pristovsek M., Savas Oe, Schlegel J., Yakovlev E. V., Kneissl M.
JOURNAL OF CRYSTAL GROWTH 315 巻 ( 1 ) 頁： 229-232 2011年1月
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Determination of the complex linear electro-optic coefficient of GaAs and InP 査読有り
Pristovsek Markus
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 247 巻 ( 8 ) 頁： 1974-1978 2010年8月
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Orientation control of GaN {1 1 (2)over-bar 2} and {1 0 (1)over-bar (3)over-bar} grown on (1 0 (1)over-bar 0) sapphire by metal-organic vapor phase epitaxy 査読有り
Ploch Simon, Frentrup Martin, Wernicke Tim, Pristovsek Markus, Weyers Markus, Kneissl Michael
JOURNAL OF CRYSTAL GROWTH 312 巻 ( 15 ) 頁： 2171-2174 2010年7月
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Metalorganic vapor phase epitaxy of InN on GaN using tertiary-butylhydrazine as nitrogen source 査読有り
Kremzow Raimund, Pristovsek Markus, Stellmach Joachim, Savas Oezguer, Kneissl Michael
JOURNAL OF CRYSTAL GROWTH 312 巻 ( 12-13 ) 頁： 1983-1985 2010年6月
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Growth of semipolar (10(1)over-bar(3)over-bar) InN on m-plane sapphire using MOVPE 査読有り
Dinh Duc V., Pristovsek M., Kremzow R., Kneissl M.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 4 巻 ( 5-6 ) 頁： 127-129 2010年6月
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Shape of indium nitride quantum dots and nanostructures grown by metal organic vapour phase epitaxy 査読有り
Ploch Simon, Meissner Christian, Pristovsek Markus, Kneissl Michael
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 6 巻 頁： S574-S577 2009年
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Growth mode of InGaN on GaN (0001) in MOVPE 査読有り
Pristovsek M., Stellmach J., Leyer M., Kneissl M.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 6 巻 頁： S565-S569 2009年
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Volmer-Weber growth mode of InN quantum dots on GaN by MOVPE 査読有り
Meissner Christian, Ploch Simon, Pristovsek Markus, Kneissl Michael
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 6 巻 頁： S545-S548 2009年
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Growth and characterization of manganese-doped InAsP 査読有り
Pristovsek M., Meissner Ch., Kneissl M., Jakomin R., Vantaggio S., Tarricone L.
JOURNAL OF CRYSTAL GROWTH 310 巻 ( 23 ) 頁： 5028-5031 2008年11月
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Ripening of InAs quantum dots on GaAs (001) investigated with in situ scanning tunneling microscopy in metal-organic vapor phase epitaxy 査読有り
Kremzow Raimund, Pristovsek Markus, Kneissl Michael
JOURNAL OF CRYSTAL GROWTH 310 巻 ( 23 ) 頁： 4751-4753 2008年11月
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The critical thickness of InGaN on (0001)GaN 査読有り
Leyer M., Stellmach J., Meissner Ch., Pristovsek M., Kneissl M.
JOURNAL OF CRYSTAL GROWTH 310 巻 ( 23 ) 頁： 4913-4915 2008年11月
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Indium nitride quantum dot growth modes in metalorganic vapour phase epitaxy 査読有り
Meissner Christian, Ploch Simon, Leyer Martin, Pristovsek Markus, Kneissl Michael
JOURNAL OF CRYSTAL GROWTH 310 巻 ( 23 ) 頁： 4959-4962 2008年11月
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Properties of InMnP (001) grown by MOVPE 査読有り
Pristovsek M., Philippou A., Raehmer B., Richter W.
JOURNAL OF CRYSTAL GROWTH 310 巻 ( 18 ) 頁： 4046-4049 2008年8月
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In-Situ Monitoring for Nano-Structure Growth in MOVPE 査読有り
Pristovsek Markus, Richter Wolfgang
SEMICONDUCTOR NANOSTRUCTURES 頁： 67-86 2008年
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Segregation and desorption of antimony in InP (001) in MOVPE 査読有り
Weeke S., Leyer M., Pristovsek M., Brunner F., Weyers M., Richter W.
JOURNAL OF CRYSTAL GROWTH 298 巻 頁： 159-162 2007年1月
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In situ scanning tunnelling microscopy during metal-organic vapour phase epitaxy 査読有り
Pristovsek M., Raehmer B., Breusig M., Kremzow R., Richter W.
JOURNAL OF CRYSTAL GROWTH 298 巻 頁： 8-11 2007年1月
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Homoepitaxial growth rate measurement using in situ reflectance anisotropy spectroscopy 査読有り
Kaspari Christian, Pristovsek Markus, Richter Wolfgang
JOURNAL OF CRYSTAL GROWTH 298 巻 頁： 46-49 2007年1月
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In situ scanning tunneling microscopy during metal-organic vapor phase epitaxy 査読有り
Raehmer Bert, Pristovsek Markus, Breusing Markus, Kremzow Raimund, Richter Wolfgang
APPLIED PHYSICS LETTERS 89 巻 ( 6 ) 2006年8月
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InN growth on sapphire using different nitridation procedures 査読有り
Drago M, Werner C, Pristovsek M, Pohl UW, Pichter W
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 203 巻 ( 7 ) 頁： 1622-1625 2006年5月
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Development of InN metalorganic vapor phase epitaxy using in-situ spectroscopic ellipsometry 査読有り
Drago M, Werner C, Pristovsek M, Pohl UW, Richter W
CRYSTAL RESEARCH AND TECHNOLOGY 40 巻 ( 10-11 ) 頁： 993-996 2005年11月
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A fast reflectance anisotropy spectrometer for in situ growth monitoring 査読有り
Kaspari C, Pristovsek M, Richter W
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 242 巻 ( 13 ) 頁： 2561-2569 2005年11月
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Growth of strained GaAsSb layers on GaAs(001) by MOVPE 査読有り
Pristovsek M, Zorn M, Zeimer U, Weyers M
JOURNAL OF CRYSTAL GROWTH 276 巻 ( 3-4 ) 頁： 347-353 2005年4月
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InN growth and annealing investigations using in-situ spectroscopic ellipsometry 査読有り
Drago M, Schmidtling T, Werner C, Pristovsek M, Pohl UW, Richter W
JOURNAL OF CRYSTAL GROWTH 272 巻 ( 1-4 ) 頁： 87-93 2004年12月
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Nitrogen-arsenic exchange process and investigation of the nitrided GaAs surfaces in MOVPE 査読有り
Hoffmann V, Poser F, Kaspari C, Weeke S, Pristovsek M, Richter W
JOURNAL OF CRYSTAL GROWTH 272 巻 ( 1-4 ) 頁： 30-36 2004年12月
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Structural analysis by reflectance anisotropy spectroscopy: As and Sb on GaAs(110) 査読有り
Pulci O, Fleischer K, Pristovsek M, Tsukamoto S, Del Sole R, Richter W
JOURNAL OF PHYSICS-CONDENSED MATTER 16 巻 ( 39 ) 頁： S4367-S4374 2004年10月
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In situ study of low-temperature growth and Mn, Si, Sn doping of GaAs (001) in molecular beam epitaxy 査読有り
Pristovsek M, Tsukamoto S
JOURNAL OF CRYSTAL GROWTH 265 巻 ( 3-4 ) 頁： 425-433 2004年5月
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In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy 査読有り
Pristovsek M, Zorn M, Weyers M
JOURNAL OF CRYSTAL GROWTH 262 巻 ( 1-4 ) 頁： 78-83 2004年2月
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Lateral short range ordering of step bunches in InGaAs/GaAs superlattices 査読有り
Hanke M, Schmidbauer M, Kohler R, Kirmse H, Pristovsek M
JOURNAL OF APPLIED PHYSICS 95 巻 ( 4 ) 頁： 1736-1739 2004年2月
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Gallium-rich reconstructions on GaAs(001) 査読有り
Pristovsek M, Tsukamoto S, Ohtake A, Koguchi N, Orr BG, Schmidt WG, Bernholc J
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 240 巻 ( 1 ) 頁： 91-98 2003年11月
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In situ scanning tunneling microscopy of InAs quantum dots on GaAs(001) during molecular beam epitaxial growth 査読有り
Bell GR, Pristovsek M, Tsukamoto S, Orr BG, Arakawa Y, Koguchi N
SURFACE SCIENCE 544 巻 ( 2-3 ) 頁： 234-240 2003年10月
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Structure of Ga-stabilized GaAs(001) surfaces at high temperatures 査読有り
Ohtake A, Tsukamoto S, Pristovsek M, Koguchi N
APPLIED SURFACE SCIENCE 212 巻 頁： 146-150 2003年5月
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Ga-rich GaAs(001) surfaces observed by STM during high-temperature annealing in MBE 査読有り
Tsukamoto S, Pristovsek M, Ohtake A, Orr BG, Bell GR, Ohno T, Koguchi N
JOURNAL OF CRYSTAL GROWTH 251 巻 ( 1-4 ) 頁： 46-50 2003年4月
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Influence of the reconstruction of GaAs (001) on the electro-optical bulk properties 査読有り
Pristovsek M, Tsukamoto S, Han B, Zettler JT, Richter W
JOURNAL OF CRYSTAL GROWTH 248 巻 頁： 254-258 2003年2月
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Novel organopalladium material formed on a sulfur-terminated GaAs(001) surface 査読有り
Arisawa M, Tsukamoto S, Shimoda M, Pristovsek M, Nishida A
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 41 巻 ( 11A ) 頁： L1197-L1199 2002年11月
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Structure analysis of the Ga-stabilized GaAs(001)-c(8x2) surface at high temperatures 査読有り
Ohtake A, Tsukamoto S, Pristovsek M, Koguchi N, Ozeki M
PHYSICAL REVIEW B 65 巻 ( 23 ) 2002年6月
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Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1-xAs growth in MOVPE 査読有り
Haberland K, Kaluza A, Zorn M, Pristovsek M, Hardtdegen H, Weyers M, Zettler JT, Richter W
JOURNAL OF CRYSTAL GROWTH 240 巻 ( 1-2 ) 頁： 87-97 2002年4月
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In-situ determination of the carrier concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy 査読有り
Pristovsek M, Tsukamoto S, Koguchi N, Han B, Haberland K, Zettler JT, Richter W, Zorn M, Weyers M
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 188 巻 ( 4 ) 頁： 1423-1429 2001年12月
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In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy 査読有り
Pristovsek M, Han B, Zettler JT, Richter W
JOURNAL OF CRYSTAL GROWTH 221 巻 頁： 149-155 2000年12月
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Surface structure of ordered InGaP(001): The (2x4) reconstruction 査読有り
Vogt P, Ludge K, Zorn M, Pristovsek M, Braun W, Richter W, Esser N
PHYSICAL REVIEW B 62 巻 ( 19 ) 頁： 12601-12604 2000年11月
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Diffusion of Ga on the GaAs (113) surface in the [1(1)over-bar-0] direction during MOVPE growth 査読有り
Pristovsek M, Menhal H, Zettler JT, Richter W
APPLIED SURFACE SCIENCE 166 巻 ( 1-4 ) 頁： 433-436 2000年10月
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Dynamic study of the surfaces of (001) gallium arsenide in metal-organic vapor-phase epitaxy during arsenic desorption 査読有り
Pristovsek M, Trepk T, Klein M, Zettler JT, Richter W
JOURNAL OF APPLIED PHYSICS 87 巻 ( 3 ) 頁： 1245-1250 2000年2月
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Atomic structure and composition of the (2X4) reconstruction of InGaP(001) 査読有り
Vogt P, Ludge K, Zorn M, Pristovsek M, Braun W, Richter W, Esser N
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 18 巻 ( 4 ) 頁： 2210-2214 2000年
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(2x4) GaP(001) surface: Atomic structure and optical anisotropy 査読有り
Frisch AM, Schmidt WG, Bernholc J, Pristovsek M, Esser N, Richter W
PHYSICAL REVIEW B 60 巻 ( 4 ) 頁： 2488-2494 1999年7月
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GaP(001) and InP(001): Reflectance anisotropy and surface geometry 査読有り
Esser N, Schmidt WG, Bernholc J, Frisch AM, Vogt P, Zorn M, Pristovsek M, Richter W, Bechstedt F, Hannappel T, Visbeck S
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 17 巻 ( 4 ) 頁： 1691-1696 1999年
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Comparative study of the GaAs (113), (115), (001), ((1)over-bar(1)over-bar(5)over-bar), ((1)over-bar(1)over-bar(3)over-bar), and (110) surfaces by atomic force microscopy, low energy electron diffraction, and reflectance anisotropy spectroscopy 査読有り
Pristovsek M, Menhal H, Schmidtling T, Esser N, Richter W
MICROELECTRONICS JOURNAL 30 巻 ( 4-5 ) 頁： 449-453 1999年
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Photoluminescence scanning near-field optical microscopy on III-V quantum dots 査読有り
Pahlke D, Poser F, Steimetz E, Pristovsek M, Esser N, Richter W
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 170 巻 ( 2 ) 頁： 401-410 1998年12月
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Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques 査読有り
Zettler JT, Haberland K, Zorn M, Pristovsek M, Richter W, Kurpas P, Weyers M
JOURNAL OF CRYSTAL GROWTH 195 巻 ( 1-4 ) 頁： 151-162 1998年12月
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Reconstructions of the GaAs (1 1 3) surface 査読有り
Pristovsek M, Menhal H, Wehnert T, Zettler JT, Schmidtling T, Esser N, Richter W, Setzer C, Platen J, Jacobi K
JOURNAL OF CRYSTAL GROWTH 195 巻 ( 1-4 ) 頁： 1-5 1998年12月
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In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere 査読有り
Hardtdegen H, Pristovsek M, Menhal H, Zettler JT, Richter W, Schmitz D
JOURNAL OF CRYSTAL GROWTH 195 巻 ( 1-4 ) 頁： 211-216 1998年12月
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Atomic structure of InP(001)-(2x4): A dimer reconstruction 査読有り
Schmidt WG, Bechstedt F, Esser N, Pristovsek M, Schultz C, Richter W
PHYSICAL REVIEW B 57 巻 ( 23 ) 頁： 14596-14599 1998年6月
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Response of the surface dielectric function to dynamic surface modifications: application of reflectance anisotropy spectroscopy and spectroscopic ellipsometry 査読有り
Zettler JT, Pristovsek M, Trepk T, Shkrebtii A, Steimetz E, Zorn M, Richter W
THIN SOLID FILMS 313 巻 頁： 537-543 1998年2月
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Ellipsometric and reflectance-anisotropy measurements on rotating samples 査読有り
Haberland K, Hunderi O, Pristovsek M, Zettler JT, Richter W
THIN SOLID FILMS 313 巻 頁： 620-624 1998年2月
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Structure of InP (001) surfaces prepared by decapping and by ion bombardment and annealing 査読有り
Pahlke D, Kinsky J, Schultz C, Pristovsek M, Zorn M, Esser N, Richter W
PHYSICAL REVIEW B 56 巻 ( 4 ) 頁： R1661-R1663 1997年7月
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Optical anisotropies of InP(001) surfaces 査読有り
Goletti C, Esser N, ReschEsser U, Wagner V, Foeller J, Pristovsek M, Richter W
JOURNAL OF APPLIED PHYSICS 81 巻 ( 8 ) 頁： 3611-3615 1997年4月
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In situ surface passivation of III-V semiconductors in MOVPE by amorphous As and P layers 査読有り
Knorr K, Pristovsek M, ReschEsser U, Esser N, Zorn M, Richter W
JOURNAL OF CRYSTAL GROWTH 170 巻 ( 1-4 ) 頁： 230-236 1997年1月
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Scanning-tunneling-microscopy study of InP(001) surfaces prepared by UHV decapping of metal-organic vapor-phase-epitaxy-grown samples 査読有り
Esser N, ReschEsser U, Pristovsek M, Richter W
PHYSICAL REVIEW B 53 巻 ( 20 ) 頁： 13257-13259 1996年5月
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Real time diagnostics of semiconductor surface modifications by reflectance anisotropy spectroscopy 査読有り
Zettler JT, Richter W, Ploska K, Zorn M, Rumberg J, Meyne C, Pristovsek M
SEMICONDUCTOR CHARACTERIZATION 頁： 537-543 1996年
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Growth oscillations with monolayer periodicity monitored by ellipsometry during metalorganic vapor phase epitaxy of GaAs(001) 査読有り
Zettler JT, Wethkamp T, Zorn M, Pristovsek M, Meyne C, Ploska K, Richter W
APPLIED PHYSICS LETTERS 67 巻 ( 25 ) 頁： 3783-3785 1995年12月
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Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001) 査読有り
Zettler JT, Rumberg J, Ploska K, Stahrenberg K, Pristovsek M, Richter W, Wassermeier M, Schutzendube P, Behrend J, Daweritz L
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 152 巻 ( 1 ) 頁： 35-47 1995年11月
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Metalorganic vapour phase epitaxial growth on vicinal GaAs (001) surfaces studied by reflectance anisotropy spectroscopy 査読有り
Ploska K, Pristovsek M, Richter W, Jonsson J, Kamiya I, Zettler JT
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 152 巻 ( 1 ) 頁： 49-59 1995年11月
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SURFACE PROCESSES BEFORE AND DURING GROWTH OF GAAS(001) 査読有り
PLOSKA K, ZETTLER JT, RICHTER W, JONSSON J, REINHARDT F, RUMBERG J, PRISTOVSEK M, ZORN M, WESTWOOD D, WILLIAMS RH
JOURNAL OF CRYSTAL GROWTH 145 巻 ( 1-4 ) 頁： 44-52 1994年12月
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EFFICIENCY OF ARSENIC AND PHOSPHORUS PRECURSORS INVESTIGATED BY REFLECTANCE ANISOTROPY SPECTROSCOPY 査読有り
KURPAS P, JONSSON J, RICHTER W, GUTSCHE D, PRISTOVSEK M, ZORN M
JOURNAL OF CRYSTAL GROWTH 145 巻 ( 1-4 ) 頁： 36-43 1994年12月