論文 - 白石 賢二
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Guiding Principle of Highly Scalable MONOS-Type Memory
1. K. Shiraishi, K. Yamaguchi, K. Kamiya, A. Otake, Y. Shigeta,
ESC Transaction, ( 41-7 ) 頁： 71-78 2011年
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First Principle Study of the Stability of H Atoms in SiN Layers on MONOS-Type Memories During Program/Erase Operations
3. K. Yamaguchi, A. Otake, K. Kamiya, Y. Shigeta, K. Shiraishi,
Proceeding of 2011 International Conference on Simulation of Semiconductor Processes and Devices 頁： 215-217 2011年
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Fundamental origin of excellent low-noise property in 3D Si-MOSFETs -Impact of charge-centroid in the channel due to quantum effect on 1/f noise-
2. W. Feng, R. Hettiarachchi, Y. Lee, S. Sato, K. Kakushima, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, K. Shiraishi, H. Iwai, K. Ohmori,
2011 Technical Digest of 2011 International Electron Devices Meetings ( 27 ) 頁： 7-1-4 2011年