論文 - 白石 賢二
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First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN
Sekiguchi K., Shirakawa H., Yamamoto Y., Araidai M., Kangawa Y., Kakimoto K., Shiraishi K.
JOURNAL OF CRYSTAL GROWTH 468 巻 頁: 950-953 2017年6月
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Thermodynamic considerations of the vapor phase reactions in III-nitride metal organic vapor phase epitaxy
Sekiguchi Kazuki, Shirakawa Hiroki, Chokawa Kenta, Araidai Masaaki, Kangawa Yoshihiro, Kakimoto Koichi, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 4 ) 2017年4月
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Evaluation of energy band offset of Si 1-xSnx semiconductors by numerical calculation using density functional theory
Nagae Yuki, Kurosawa Masashi, Araidai Masaaki, Nakatsuka Osamu, Shiraishi Kenji, Zaima Shigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 4 ) 2017年4月
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Edge states of hydrogen terminated monolayer materials: silicene, germanene and stanene ribbons
Hattori Ayami, Tanaya Sho, Yada Keiji, Araidai Masaaki, Sato Masatoshi, Hatsugai Yasuhiro, Shiraishi Kenji, Tanaka Yukio
JOURNAL OF PHYSICS-CONDENSED MATTER 29 巻 ( 11 ) 2017年3月
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DFT modeling of carbon incorporation in GaN(0001) and GaN(000-1) metalorganic Vaporphase epitaxy
Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, and Hiroshi Amano
Appl. Phys.Lett. ( 111 ) 頁: 141602 2017年
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Defect Formation in SiO2 Formed by Thermal Oxidation of SiC
Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji
2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM) 頁: 242-243 2017年
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First Principles and Themodynamical Studies on Matel Organic Vaper Phase Epitaxy of GaN
Shiraishi Kenji, Sekiguchi Kazuki, Shirakawa Hiroki, Chokawa Kenta, Araidai Masaaki, Kangawa Yoshihiro, Kakimoto Koichi
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR 80 巻 ( 1 ) 頁: 295-301 2017年
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Silicon Emission Mechanism for Oxidation Process of Non-Planar Silocon
H.Kagechima, K.Shiraishi, T.Endoh
ECS Transactions 75 巻 ( 5 ) 頁: 216-226 2016年
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Shape effects of GeSbTe nanodots on the near-field interaction with a silver triangle antenna 査読有り
N Kojima, N Ota, K Asakawa, K Shiraishi, K Yamada
Japanese Journal of Applied Physics 54(4) 巻 頁: 025009 2015年
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First-principles calculations for initial oxidation processes of SiC surfaces: Effect of crystalline surface orientations 査読有り
A Ito, T Akiyama, K Nakamura, T Ito, H Kageshima, M Uematsu, and Kenji Shiraishi
Japanese Journal of Applied Physics 54(10) 巻 頁: 101301 2015年
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First-principles investigations for oxidation reaction processes at 4H-SiC/SiO2 interface and its orientation dependence 査読有り
T Akiyama, A Ito, K Nakamura, T Ito, H Kageshima, M Uematsu, and Kenji Shiraishi
Surface Science 641 巻 頁: 174-179 2015年
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Asymmetric Behavior of Current-induced magnetization swyching in a magnetic tunnel juction: Non-equilibrium first-principles Calculations 査読有り
Masaaki Araidai, Takahiro Yamamoto, Kenji Shiraisi
Applied Physics Express ( 7 ) 頁: 045202.1-3 2014年3月
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A QM/MM study of nitric oxide reductase-catalysed N2O formation 査読有り
M. Shoji, K, Hanaoka, D. Kondo, A. Sato, H, Umeda, K. Kamiya, K. Shiraishi
Molecular Physics: An International Journal at the Interface Between Chemistry and Physics ( 112 ) 頁: 393-397 2014年2月
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A QM/MM study of nitric oxide reductase-catalysed N2O formation 査読有り
M. Shoji, K, Hanaoka, D. Kondo, A. Sato, H, Umeda, K. Kamiya, K. Shiraishi
International Journal of Quantum Chemistry, ( 112 ) 頁: 393-397 2014年1月
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Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure 査読有り
Y. Sakurai, K. Kakushima, K. Ohmori, K. Yamada, H. Iwai, K. Shiraishi, S. Nomura
Optics Express ( 22 ) 頁: 1997-2006 2014年1月
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Asymmetric behavior of current-induced magnetization switching in a magnetic tunnel junction: Non-equilibrium first-principles calculations 査読有り
38. Masaaki Araidai, Takahiro Yamamoto, Kenji Shiraishi,
Appl. Phys. Exp. ( 7 ) 頁: 045202-045204 2014年
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Role of nitrogen incorporation into Al2O3-based resistive random-access memory 査読有り
40. Moon Young Yang, Katsumasa Kamiya, Hiroki Shirakawa, Blanka Magyari-Köpe, Yoshio Nishi, Kenji Shiraishi
Appl. Phys. Exp. ( 7 ) 頁: 074202-074205 2014年
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GeTe sequences in superlattice phase change memories and their electrical characteristics 査読有り
39. T. Ohyanagi, M. Kitamura, M. Araidai, S. Kato, N. Takaura, K. Shiraishi,
Appl. Phys. Lett. ( 104 ) 頁: 252106-252108 2014年
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Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach 査読有り
Y. Kangawa, T. Akiyama, T. Ito, K. Shiraishi, T. Nakayama
Materials ( 6 ) 頁: 3309-3360 2013年12月
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Nanoscale (-10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode 査読有り
E. Cha, J. Woo, D. Lee, S. Lee, J. Song, Y. Koo, J. Lee, C. G. Park. M. Y. Yang, K. Kamiya, K. Shiraishi, B. Magyari-Köpe, Y. Nishi, H, Hwang
Tech. Digest of 2013 International Electron Devices Meeting 頁: P10.5.1-P10.5.4 2013年12月