論文 - 白石 賢二
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Charge-injection phase change memory with high-quality GeTe/Sb2Te3 superlattice featuring 70-μA RESET, 10-ns SET and 100M endurance cycles operations 査読有り
T. Ohyanagi, N. Takaura, M. Tai, K. Kitamura, M. Kinoshita, K. Akita, T. Morikawa, S. Kato, M. Araidai, K. Kamiya, T. Yamamoto, K. Shiraishi
Tech. Digest of 2013 International Electron Devices Meeting 頁: P.30.5.1-P.30.5.4 2013年12月
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Vacancy Cohesion-Isolation Phase Transition Upon Charge Injection and Removal in Binary Oxide-Based RRAM Filamentary-Type Switching 査読有り
K. Kamiya, M. Y. Yang, B. Magyari-Köpe, M. Niwa, Y. Nishi, K. Shiraishi
IEEE Transactions on Electron Devices ( 60 ) 頁: 3400-3406 2013年11月
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Charge-dependent oxygen vacancy diffusion in Al2O3-based resistive-random-access-memories 査読有り
M. Y. Yang, K. Kamiya, B. Magyari-Köpe, M. Niwa, Y. Nishi, K. Shiraishi
Appl. Phys. Lett. ( 103 ) 頁: 93504 2013年10月
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Interstitial oxygen induced Fermi level pinning in the Al2O3-based high-k MISFET with heavy-doped n-type poly-Si gates 査読有り
M. Y. Yang, K. Kamiya, K. Shiraishi
AIP Advances ( 3 ) 頁: 102113 2013年10月
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Theoretical Design of Desirable Stack Structure for Resistive Random Access Memories 査読有り
K. Kamiya, M. Y. Yang, B. Magyari-Köpe, M. Niwa, Y. Nishi, K. Shiraishi,
ECS Trans. 58 頁: 181-188 2013年10月
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Generalized Mechanism of the Resistance Switching in Binary-Oxide=Based Resistive Random-Access Memories 査読有り
Katsumasa Kamiy, Moon Young Yang, Takahiro Nagata, Seong-Geon Park, Blanka Magyari-Köpe, Toyohiro Chikyow,Keisaku Yamada, Masaaki NIwa, Yoshio Nishi,Kenji Shiraisi
Physical Review B ( 87 ) 頁: 155201 2013年8月
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Energetics and electron states of Au/Ag incorporated into crystalline/amorphous silicon 査読有り
M. Y. Yang, K. Kamiya, T. Yamauchi, T. Nakayama, K. Shiraishi
J. Appl. Phys. ( 114 ) 頁: 63701 2013年8月
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Effect of Coulomb interaction on multi-electronwave packet dynamics 査読有り
T. Shiokawa, Y. Takada, S. Konabe, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi
AIP Conf. Proc. ( 1566 ) 頁: 421-422 2013年8月
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Physical origins of ON-OFF switching in ReRAM via VO based conducting channels 査読有り
K. Kamiya, M. Y. Yang, S-G. Park, B. Magyari-Köpe, Y. Nishi, M. Niwa, K. Shiraishi
AIP Conf. Proc. ( 1566 ) 頁: 11-12 2013年8月
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Substrate-mediated proton relay mechanism for the religation reaction in topoisomerase II 査読有り
K. Hanaoka, M. Shoji, D. Kondo, A. Sato, M. Y. Yang, K. Kamiya, K. Shiraishi
Journal of Biomolecular Structure and Dynamics ( 31 ) 頁: 1-7 2013年7月
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Charge injection Super-lattice Phase Change Memory for low power and high density storage device applications 査読有り
N. Takaura, T. Ohyanagi, M. Kitamura, M. Tai, M. Kinoshita, K. Akita, T. Morikawa, S. Kato, M. Araidai, K. Kamiya, T. Yamamoto, K. Shiraishi,
Tech. Digest of 2013 Symposium on VLSI Tech. 頁: T130-T131 2013年6月
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Dynamical Study of Multi-Election Wave Packet in Nanoscale Structure 査読有り
Kenji Shiraisi, Taro Shiokawa, Genki Fujita
Jpn. J. Appl. Phys ( 52 ) 頁: 04CJ06 2013年4月
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Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al2O3 Insertion Layer
M. Y. Yang, K. Kamiya, B. Magyari-Köpe, H. Momida, T. Ohno, M. Niwa, Y. Nishi, K. Shiraishi
Jpn. J. Appl. Phys ( 52 ) 頁: 04CD11 2013年4月
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On the important role of the anti-Jahn-Teller effect in underdoped cuprate superconductors 査読有り
H. Kamimura, S. Matsuno, T. Mizokawa, K. Sasaoka, K. Shiraishi, H. Ushio
J. Phys.: Conf. Ser. ( 429 ) 頁: 12043 2013年4月
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Interacting Electron Wave Packet Dynamics in a Two-Dimensional Nanochannel 査読有り
C. M. Puetter, S. Konabe, Y. Hatsugai, K. Ohmori, K. Shiraishi
Appl. Phys. Exp. ( 6 ) 頁: 65201 2013年4月
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Calculation of the electron transfer coupling matrix element in diabatic reactions 査読有り
M. Shoji, K. Hanaoka, A. Sato, Daiki Kondo, M. Y. Yang, K. Kamiya, K. Shiraishi,
International Journal of Quantum Chemistry ( 13 ) 頁: 342-347 2013年
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The dissociation modes of threading screw dislocations in 4H-SiC 査読有り
S. Onda, H. Watanabe, Y. Kito, H. Kondo, H. Uehigashi, Y. Hisada, K. Shiraishi, H. Saka
Phil. Mag. Lett. ( 93 ) 頁: 591-600 2013年
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Transmission electron microscope study of a threading dislocation with and its effect on leakage in a 4H-SiC MOSFET 査読有り
S. Onda, H. Watanabe, Y. Kito, H. Kondo, H. Uehigashi, N. Hosokawa, Y. Hisada, K. Shiraishi, H. Saka
Phil. Mag. Lett. ( 93 ) 頁: 439-447 2013年
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Evaluation of Growth and Cleaning Rates of Chamber-Wall Deposition during Silicon Gate Etching 査読有り
18. J. Tanaka K. Shiraishi
e-Journal of Surface Science and Nanotechnology, ( 11 ) 頁: 1-7 2013年
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Mechanism of hole doping into hydrogen terminated diamond by the adsorption of inorganic molecule 査読有り
Y. Takagi, K. Shiraishi, M. Kasu H. Sato,
Surface Science, 頁: 203?206 2013年