論文 - 白石 賢二
-
Theoretical study of the atomistic behavior of O vacancy complexes with N and H atoms in the SiO2 layer of a metal-oxide-nitride-oxide-semiconductor memory: Physical origin of the irreversible threshold voltage shift observed in metal-oxide-nitride-oxide-semiconductor memories
Shirakawa Hiroki, Araidai Masaaki, Kamiya Katsumasa, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 8 ) 2018年8月
-
Theoretical study of strain-induced modulation of the bandgap in SiC
Chokawa Kenta, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 7 ) 2018年7月
-
Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge
Kojima Eiji, Chokawa Kenta, Shirakawa Hiroki, Araidai Masaaki, Hosoi Takuji, Watanabe Heiji, Shiraishi Kenji
APPLIED PHYSICS EXPRESS 11 巻 ( 6 ) 2018年6月
-
Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface (vol 11, 031002, 2018)
Chokawa Kenta, Narita Tetsuo, Kikuta Daigo, Kachi Tetsu, Shiozaki Koji, Shiraishi Kenji
APPLIED PHYSICS EXPRESS 11 巻 ( 6 ) 2018年6月
-
Reconsideration of Si pillar thermal oxidation mechanism
Kageshima Hiroyuki, Shiraishi Kenji, Endoh Tetsuo
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月
-
Oxygen concentration dependence of silicon oxide dynamical properties
Yajima Yuji, Shiraishi Kenji, Endoh Tetsuo, Kageshima Hiroyuki
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月
-
Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy
Sekiguchi Kazuki, Shirakawa Hiroki, Chokawa Kenta, Araidai Masaaki, Kangawa Yoshihiro, Kakimoto Koichi, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 4 ) 2018年4月
-
First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb2Te3 superlattice
Shirakawa Hiroki, Araidai Masaaki, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 4 ) 2018年4月
-
Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation
Akiyama Toru, Hori Shinsuke, Nakamura Kohji, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 4 ) 2018年4月
-
Investigation of the GaN/ Al2O3 Interface by First Principles Calculations
Chokawa Kenta, Kojima Eiji, Araidai Masaaki, Shiraishi Kenji
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 255 巻 ( 4 ) 2018年4月
-
First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model
Nagura Takuya, Kawachi Shingo, Chokawa Kenta, Shirakawa Hiroki, Araidai Masaaki, Kageshima Hiroyuki, Endoh Tetsuo, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 4 ) 2018年4月
-
First principles study of the effect of hydrogen annealing on SiC MOSFETs
Chokawa Kenta, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 4 ) 2018年4月
-
Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface
Chokawa Kenta, Narita Tetsuo, Kikuta Daigo, Kachi Tetsu, Shiozaki Koji, Shiraishi Kenji
APPLIED PHYSICS EXPRESS 11 巻 ( 3 ) 2018年3月
-
Dust Coagulation Regulated by Turbulent Clustering in Protoplanetary Disks
Ishihara Takashi, Kobayashi Naoki, Enohata Kei, Umemura Masayuki, Shiraishi Kenji
ASTROPHYSICAL JOURNAL 854 巻 ( 2 ) 2018年2月
-
Theoretical Study of the Electronic Structure of Threading Edge Dislocations in GaN
Nakano Takashi, Araidai Masaaki, Shiraishi Kenji, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 8 86 巻 ( 12 ) 頁： 41-49 2018年
-
DFT modeling of carbon incorporation in GaN(0001) and GaN(000(1)over-bar) metalorganic vapor phase epitaxy
Kempisty Pawel, Kangawa Yoshihiro, Kusaba Akira, Shiraishi Kenji, Krukowski Stanislaw, Bockowski Michal, Kakimoto Koichi, Amano Hiroshi
APPLIED PHYSICS LETTERS 111 巻 ( 14 ) 2017年10月
-
Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories
Shirakawa Hiroki, Yamaguchi Keita, Araidai Masaaki, Kamiya Katsumasa, Shiraishi Kenji
IEICE TRANSACTIONS ON ELECTRONICS E100C 巻 ( 10 ) 頁： 928-933 2017年10月
-
First-principles study on adsorption structure and electronic state of stanene on alpha-alumina surface
Araidai Masaaki, Kurosawa Masashi, Ohta Akio, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 9 ) 2017年9月
-
Thermodynamic analysis of (0001) and (000(1)over-bar) GaN metalorganic vapor phase epitaxy
Kusaba Akira, Kangawa Yoshihiro, Kempisty Pawel, Valencia Hubert, Shiraishi Kenji, Kumagai Yoshinao, Kakimoto Koichi, Koukitu Akinori
JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 7 ) 2017年7月
-
First principles investigation of SiC/AlGaN(0001) band offset
Kojima E., Endo K., Shirakawa H., Chokawa K., Araidai M., Ebihara Y., Kanemura T., Onda S., Shiraishi K.
JOURNAL OF CRYSTAL GROWTH 468 巻 頁： 758-760 2017年6月