論文 - 宇佐美 徳隆
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Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxy
E. S. Kim, N. Usami and Y. Shiraki
Semiconductor Science and Technology 14 巻 ( 3 ) 頁： 257-265 1999年3月
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Optical characterization of strain-induced structural modification in SiGe-based heterostructures
N. Usami, K. Leo and Y. Shiraki
Journal of Applied Physics 85 巻 ( 4 ) 頁： 2363-2366 1999年2月
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Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1-xGex for MOS applications
L. K. Bera, S. K. Ray, D. K. Nayak, N. Usami, Y. Shiraki and C. K. Maiti
Journal of Electronic Materials 28 巻 ( 2 ) 頁： 98-104 1999年2月
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Photoluminescence study of InP/GaP highly strained quantum wells
T. Kimura, H. Yaguchi, N. Usami, K. Onabe and Y. Shiraki
INSTITUTE OF PHYSICS CONFERENCE SERIES 162 巻 頁： 511-516 1999年
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Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy
S. J. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki and R. Ito
Japanese Journal of Applied Physics Part 2-Letters 37 巻 ( 12B ) 頁： L1493-L1496 1998年12月
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Epitaxial growth and photoluminescence of Si/pure-Ge/Si quantum structures on Si(311) substrates
K. Amano, M. Kobayashi, A. Ohga, T. Hattori, N. Usami and Y. Shiraki
Semiconductor Science and Technology 13 巻 ( 11 ) 頁： 1277-1283 1998年11月
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Wavy interface morphologies in strained Si1-xGex/Si multilayers on vicinal Si(111) substrates
J. H. Li, Y. Yamaguchi, H. Hashizume, N. Usami and Y. Shiraki
Journal of Physics-Condensed Matter 10 巻 ( 39 ) 頁： 8643-8652 1998年10月
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Photoluminescence and Raman scattering of pure germanium/silicon short period superlattice
Z. G. Ji, N. Usami, H. Sunamura and Y. Shiraki
Acta Physica Sinica-Overseas Edition 7 巻 ( 8 ) 頁： 608-612 1998年8月
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Electrical properties of N2O/NH3 plasma grown oxynitride on strained-Si
L. K. Bera, S. K. Ray, M. Mukhopadhyay, D. K. Nayak, N. Usami, Y. Shiraki and C. K. Maiti
Ieee Electron Device Letters 19 巻 ( 8 ) 頁： 273-275 1998年8月
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Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties
E. S. Kim, N. Usami and Y. Shiraki
Applied Physics Letters 72 巻 頁： 1617-1619 1998年3月
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In-plane potential modulation in tensilely strained AlGaP-based neighboring confinement structure
N. Usami, T. Sugita, T. Ohta, H. Ito, K. Uchida, Y. Shiraki, F. Minami and N. Miura
PHYSICA E 2 巻 頁： 883-886 1998年
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Exciton diffusion dynamics in quantum nanostructures on V-groove patterned substrates
N. Usami, Y. Shiraki, W. Pan, H. Yaguchi and K. Onabe
Superlattices and Microstructures 23 巻 ( 2 ) 頁： 395-400 1998年
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Magneto-photoluminescence spectra of GaP/AlP short-period superlattices in high magnetic fields and uniaxial pressures
K. Uchida, N. Miura, T. Sugita, F. Issiki, N. Usami and Y. Shiraki
PHYSICA B 251 巻 頁： 909-913 1998年
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Control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells and selective epitaxy on patterned substrates
N. Usami, J. Arai, E. S. Kim, K. Ota, T. Hattori and Y. Shiraki
PHYSICA E 2 巻 頁： 137-141 1998年
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Photoluminescence from pure-Ge/pure-Si neighboring confinement structure
N. Usami, M. Miura, H. Sunamura and Y. Shiraki
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 16 巻 頁： 1710-1712 1998年
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New strain-relieving microstructure in pure-Ge/Si short-period superlattices
H. Sunamura, N. Usami, Y. Shiraki and S. Fukatsu
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 16 巻 ( 3 ) 頁： 1595-1598 1998年
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Effect of tensile strain on optical properties of AlGaP-based neighboring confinement structure
T. Ohta, N. Usami, F. Issiki and Y. Shiraki
Superlattices and Microstructures 23 巻 ( 1 ) 頁： 97-102 1998年
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Temperature dependence of microscopic photoluminescence spectra of quantum dots and quantum wells
K. Ota, N. Usami and Y. Shiraki
PHYSICA E 2 巻 ( 1-4 ) 頁： 573-577 1998年
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Enhanced no-phonon transition in indirect GaAsP/GaP quantum wells by insertion of monolayer AlP for electron localization
T. Sugita, N. Usami and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH 188 巻 ( 1-4 ) 頁： 323-327 1998年
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Spectroscopic study of Si-based quantum wells with neighbouring confinement structure
N. Usami, Y. Shiraki and S. Fukatsu
Semiconductor Science and Technology 12 巻 ( 12 ) 頁： 1596-1602 1997年12月