Presentations -
-
SiC溶液成長における溶媒インクルージョン形成のマルチスケールシミュレーション
鄭 朗程, 周 惠琴, 黨 一帆, 沓掛 健太朗, 原田 俊太, 田川 美穂, 宇治原 徹
2023年第84回応用物理学会秋季学術講演会 2023.9.20
-
SiC溶液成長における炭素拡散場を介したマクロステップ相互作用の数値解析
中西 祐貴, 沓掛 健太朗, 原田 俊太, 田川 美穂, 宇治原 徹
日本金属学会2023年秋期(第173回)講演大会 2023.9.22
-
3-dimensional observation of dislocations in 4H-SiC using focused light birefringence
Masashi Kato, Hisaya Sato, Tomohisa Kato, Koichi Murata, Shunta Harada
ICSCRM 2023 2023.9.18
-
Optimization of Temperature Distribution and Flow Distribution using Machine Learning for 8-Inch SiC Crystal Growth by TSSG Method
Daiki Shimoda, Kentaro Kutsukake, Shunta Harada, Miho Tagawa, Toru Ujihara
ICSCRM 2023 2023.9.19
-
Effects of Solution Properties on Growth Conditions of SiC Solution Growth
Juanheng Li, Zhou Huiqin, Liu Xin, Kutsukake Kentaro, Harada Shunta, Tagawa Miho, Ujihara Toru
ICSCRM 2023 2023.9.20
-
Detailed characterization of defects in SiC using novel birefringence imaging toward identification of device-killer defects
Shunta Harada, Yasutaka Matsubara, Kenta Murayama
ICSCRM 2023 2023.9.19
-
Birefringence image simulation of dislocations in a SiC crystal considering three-dimensional stress fields.
Yasutaka Matsubara, Kenta Murayama, Shunta Harada
ICSCRM 2023 2023.9.21
-
Analysis of the Effect of Solvent Composition on Suppression of Inclusion in SiC Solution Growth
Huiqin Zhou, Yuma Fukami, Hitoshi Miura, Kentaro Kutsukake, Shunta Harada, Tour Ujihara
ICSCRM 2023 2023.9.19
-
Advances in Suppressing Bipolar Degradation in SiC Devices: Carrier Lifetime Control and Proton Implantation (invited paper) Invited
Masashi Kato, Shunta Harada, Hitoshi Sakane
ICSCRM 2023 2023.9.20
-
Defect characterization of SiC wafers by polarized light microscope under a condition slightly deviated from crossed Nicols
S. Harada, Y. Matsubara, K. Murayama
IUCr2023 2023.8.29
-
Modulated crystallographic shear structure in titanium-chromium oxides: their structure and phonon transport properties
S. Harada, T. Hattori†, M. Inden†, S. Sugimoto†, M. Itoh†, M. Tagawa, T. Ujihara
IUCr2023 2023.8.29
-
Analysis of Macrostep Interaction via Carbon Diffusion Field in SiC Solution Growth
Yuki Nakanishi, Kentaro Kutsukake, Yifan Dang, Shunta Harada, Miho Tagawa, Toru Ujihara
ICCGE-20 2023.8.1
-
Surface Stability of Reconstructions on BAs(001) Surface: An Ab Initio-Based ApproachSurface Stability of Reconstructions on BAs(001) Surface: An Ab Initio-Based Approach
Cai Peiyang, Toru Akiyama, Shunta Harada, Miho Tagawa, Toru Ujihara
ICCGE-20 2023.8.3
-
Silicate Spherulites Rapidly Crystallized from Hypercooled Melt Droplets
Katsuo Tsukamoto, Kana Watanabe, Shuta Harada, Daigo Shimizu, Hitoshi Miura
ICCGE-20 2023.8.1
-
Optimization method of crystal growth conditions by tacit knowledge (for large-diameter SiC solution growth)
Toru Ujihara, Masaru Isono, Kentaro Kutsukake, Ichiro Takeuchi, Koki Suzuki, Tomoaki Furusho, Miho Tagawa, Shunta Harada
ICCGE-20 2023.7.31
-
First-principles analysis of the activation energy of solute-additive bonds in the solvent of SiC solution growth
Shota Seki, Takahiro Kawamura, Shunta Harada, Miho Tagawa, Toru Ujihara
ICCGE-20 2023.8.3
-
Effect of macrostep height on formation of solvent inclusion in SiC solution growth
Yuma Fukami, Huiqin Zhou, Kentaro Kutsukake, Shunta Harada, Miho Tagawa, Toru Ujihara
ICCGE-20 2023.8.1
-
Data-Driven Automated Control Algorithm for Floating-Zone Crystal Growth Using Reinforcement Learning Invited
Harada S, Tosa Y, Omae R, Matsumoto R, Sumitani S
ICCGE-20 2023.7.31
-
Characterization of Defects in SiC Substrates for Power Device Applications by Birefringence Imaging
Harada S, Matsubara Y, Murayama K
ICCGE-20 2023.7.31
-
Data-Driven Modeling and Adaptive Optimization of Floating Zone Crystal Growth Process Applying Gaussian Mixture Model and Reinforcement Learning
Shunta Harada, Yusuke Tosa, Ryo Omae, Ryohei Matsumoto, Shogo Sumitani
2023 MRS Spring Meeting 2023.4.14