Presentations -
-
Observation of basal plane dislocations generated during solution growth in 4H-silicon carbide
S.Y.Xiao, S.Harada, T.Ujihara
ISETS '13 2013.12.13
-
NEA表面を利用した伝導電子エネルギーの直接測定 International conference
市橋史朗, 志村大樹, 西谷健治, 原田俊太, 桑原真人, 伊藤孝寛, 田川美穂, 宇治原徹
2012年度春季 第60回 応用物理学関係連合講演会 2013.3.27
-
NaClO3 溶液成長におけるアキラル-キラル多形転移を介したキラリティの発生と増幅
新家寛正, 原田俊太, 宇治原徹, 三浦均, 木村勇気, 上羽牧夫, 塚本勝男
日本地球惑星科学連合2014年大会 2014.3
-
NaClO3溶液成長におけるアキラルな準安定相の溶解度測定 International conference
新家寛正, 原田俊太, 宇治原徹, 三浦均, 木村勇気, 上羽牧夫, 塚本勝男
第43回結晶成長国内会議 2013.11.6
-
NaClO3溶液成長におけるアキラルな準安定相を介したキラル結晶形成過程 International conference
新家寛正, 原田俊太, 宇治原徹, 三浦均, 木村勇気, 栗林貴弘上羽牧夫, 塚本勝男
第43回結晶成長国内会議 2013.11.6
-
Nanoparticle Assembly mediated by Designed DNA Nanostructures
M. Tagawa, O. Gang, K. Yager, T. Isogai, E. Akada, S. Harada, T. Ujihara
2013.6.30
-
N-type doping of 4H-SiC by top-seeded solution growth technique
K. Kusunoki, K. Kamei, K. Seki, S. Harada, Toru Ujihara
ICSCRM 2013 2013.9.29
-
Increase in the growth rate by rotating the seed crystal at a high speed during the solution growth of SiC
T. Umezaki, D. Koike, S. Harada, T. Ujihara
ICSCRM 2013 2013.9.29
-
Influence of solution flow on step bunching in solution growth of SiC
C. Zhu, K. Seki, S. Harada, H. Niinomi, M. Tagawa, T. Ujihara
ECSCRM 2012 2012.9.2
-
Mechanisms behind low lattice thermal conduction of high density of planar defects containing TiO2-x by atomistic simulations
Y. Miyauchi, M. Tada, M. Yoshiya, S. Harada, K. Tanaka, H. Yasuda, H. Inui
IUMRS-ICEM 2012 2012.9.23
-
Improvement of surface morphology by solution flow control in solution growth of SiC on off-axis seeds
T. Umezaki, D. Koike, S. Harada, T. Ujihara
10th European Conference on Silicon Carbide and Related Materials 2014.9.21
-
Forming two-dimensional structure of DNA-functionalized Au nanoparticles via lipid diffusion in supported lipid bilayers
Takumi Isogai, Agnes Piednoir, Eri Akada, Yuki Akahoshi, Ryugo Tero, Shunta Harada, Toru Ujihara, Miho Tagawa
17th International Conference on Crystal Growth and Epitaxy 2013.8.11
-
Growth of high quality 3C-SiC on hexagonal SiC seed using TSSG method
Kazuaki Seki, Shota Yamamoto, Shunta Harada, Toru Ujihara
17th International Conference on Crystal Growth and Epitaxy 2013.8.11
-
Heavily Al doped 4H-SiC growth by the top-seeded solution growth technique using Si-Al-Cu melt as a solvent
K. Kusunoki, K. Kamei, K. Seki, Y. Kishida, K. Moriguchi, H. Kaidoh, S. Harada, T. Ujihara
10th European Conference on Silicon Carbide and Related Materials 2014.9.21
-
Formation of Different Polytypes during 4H-SiC Solution Growth
Shunta Harada, Alexander, Kazuaki Seki, Yuji Yamamoto, Toru Ujihara, Jun Yamasaki, Nobuo Tanaka
ISETS '11 2011.12.9
-
Fe 過剰BaFe2(As,P)2 薄膜の臨界電流密度増大の起源 International conference
森康博, 藤本亮祐, 坂上彰啓, 原田俊太, 宇治原徹, 田渕雅夫, 生田博志
2013年 第74回応用物理学会秋季学術講演会 2013.9.16
-
Evolution of threading screw dislocation conversion during solution growth of 4H-SiC
Shunta Harada, Yuji Yamamoto, Kazuaki Seki, Atsushi Horio, Takato Mitsuhashi, Miho Tagawa, Toru Ujihara
17th International Conference on Crystal Growth and Epitaxy 2013.8.11
-
Evolution of Threading Edge Dislocation During Solution Growth of SiC
S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, T. Ujihara
SSDM2012 2012.9.25
-
Evaluation of Mini-Bands Formed in Superlattice Structure for Intermediate-Band Solar Cell
D.Shimura, F.Ichihashi, K.Nishitani, S.Harada, T.Ito, M.Kuwahara, M.Matsunami, S.Kimura, M.Tagawa, T.Ujihara
ISETS '13 2013.12.13
-
Electron Spectroscopy of Conduction Electrons Exited by Visible Light Utilizing NEA Surface
Fumiaki Ichihashi, Daiki Shimura, Kenji Nishitani, Makoto Kuwahara, Takahiro Ito, Shunta Harada, Miho Tagawa, Toru Ujihara
Photovoltaic specialists conference 39th 2013.7.16