Presentations -
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Direct Observation of Mini-bands in AlGaAs/GaAs Superlattice for Intermediate Band Solar Cell International conference
D. Shimura, K. Hashimoto, F. Ichihashi, S. Harada, T. Ito, M. Kuwahara, M. Matsunami, S. Kimura, T. Sakai,T. Ujihara
IUMRS-ICEM 2012
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Direct Observation of Defect Evolution during Solution Growth of SiC by Synchrotron X-ray Topography International conference
S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi and T. Ujihara
IUMRS-ICEM 2012
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Mechanisms behind low lattice thermal conduction of high density of planar defects containing TiO2-x by atomistic simulations International conference
Y. Miyauchi, M. Tada, M. Yoshiya, S. Harada, K. Tanaka, H. Yasuda, H. Inui
IUMRS-ICEM 2012
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VS 法による高アスペクト比AlN ウィスカーの成長
松原弘明,水野恒平,竹内幸久,原田俊太,宇治原徹,青木祐一,小原公和
第25回セラミックス協会秋季シンポジウム
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Al 融液窒化法において成長温度がAlN組織形成に与える影響
水野恒平,松原弘明,竹内幸久,原田俊太,宇治原徹,青木祐一,小原公和
第25回セラミックス協会秋季シンポジウム
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溶液法によるサファイア基板上へのAlN単結晶成長
松原弘明，水野恒平，竹内幸久，原田俊太，木藤泰男，奥野英一，宇治原徹
第73回 応用物理学会学術講演会
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SiC溶液成長における流れがステップバンチングに及ぼす影響
Can Zhu，原田俊太，関 和明，新家寛正，宇治原徹
第73回 応用物理学会学術講演会
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4H-SiC溶液成長における貫通刃状転位の選択的変換
原田俊太，山本祐治，関 和明，堀尾篤史，三橋貴仁，宇治原徹
第73回 応用物理学会学術講演会
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DPBフリー3C-SiCの溶液成長
関 和明，原田俊太，宇治原徹
第73回 応用物理学会学術講演会
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TSSG法で育成した4H-SiC結晶の窒素ドーピング挙動
楠 一彦，関 和明，原田俊太，亀井一人，矢代将斉，宇治原徹
第73回 応用物理学会学術講演会
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Solution growth of DPB-free 3C-SiC International conference
K. Seki, S. Harada, T. Ujihara
ECSCRM 2012
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Effect of surface polarity on the conversion of threading dislocations in solution growth International conference
Y. Yamamoto, S. Harada, K. Seki, A. Horio, T. Mitsuhashi, T. Ujihara
ECSCRM 2012
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Possibility for elimination of dislocations in SiC crystal: conversion of threading edge dislocations by solution growth International conference
S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, C. Zhu, M. Tagawa, T. Ujihara
ECSCRM 2012
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Influence of solution flow on step bunching in solution growth of SiC International conference
C. Zhu, K. Seki, S. Harada, H. Niinomi, M. Tagawa, T. Ujihara
ECSCRM 2012
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Reduction of threading screw dislocation density utilizing defect conversion during solution growth of 4H-SiC International conference
S. Harada, Y. Yamamoto, K. Seki, T. Ujihara
ECSCRM 2012
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Anisotropy of Lattice Thermal Conduction in TiO2-x with High Density of Planar Defects by Atomistic Simulations International conference
Y. Miyauchi, M. Tada, M. Yoshiya, S. Harada, K. Tanaka, H. Yasuda, H. Inui
The 3rd International Symposium on Advanced Microscopy and Theoretical Calculations (AMTC3)
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Efficient process for ultrahigh quality 4H-SiC crystal utilizing solution growth on off-axis seed crystal International conference
Shunta HARADA, Yuji YAMAMOTO, Kazuaki SEKI, Atsushi HORIO, Takato MITSUHASHI, Toru UJIHARA
Materials research society 2012 spring meeting
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SiC溶液成長における貫通らせん転位低減の促進
原田 俊太，山本 祐治，関 和明，堀尾 篤史，三橋貴仁，宇治原 徹
2012年春季 第59回 応用物理学関係連合講演会
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Reduction of Defects in SiC by Solution Growth for High Performance Power Device
Shunta Harada, Yuji Yamamto, Kazuaki Seki, Toru Ujihara Yuta Yamamoto, Shigeo Arai, Jun Yamasaki and Nobuo Tanaka
Interational symposium on role of electron microscopy in industry
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Formation of Different Polytypes during 4H-SiC Solution Growth International conference
Shunta Harada, Alexander, Kazuaki Seki, Yuji Yamamoto, Toru Ujihara, Jun Yamasaki, Nobuo Tanaka
ISETS '11