Presentations -
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Characterization and growth of nitride based quantum structures
Materials Research Society 1997 Fall Meeting
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Structural and Optical properties of Group Ⅲ Nitrides and Their Lasers
Intl. Conf. on SiC, Ⅲ-Nitrides and Related Materials
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Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD International conference
Abhinay S
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 2019.3
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Theoretical study of the electronic structure of threading edge dislocations in GaN International conference
Nakano T
ECS Transactions 2018
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Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements International conference
Piva F
Proceedings of SPIE - The International Society for Optical Engineering 2020
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Electronic structure analysis of core structures of threading dislocations in GaN International conference
Nakano T
2019 Compound Semiconductor Week, CSW 2019 - Proceedings 2019.5
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Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes International conference
Yates L
Proceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018 2018.7.24