Faculty Profiles - AMANO, Hiroshi

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環境貢献と経済発展の両立・・・進化を続けるLED技術

天野　浩

日本フォトニクス協議会関西支部設立記念講演会

窒化物半導体結晶成長の表面反応制御と三次元構造デバイス

天野　浩

第61回応用物理学会春季学術講演会

窒化物半導体による生活の変革

天野　浩

CREST　太陽光を利用した独創的クリーンエネルギー生成技術の創成　第2回研究シンポジウム

名古屋大学赤﨑記念館の概要と名古屋大学におけるLED研究の取り組み

天野　浩

産業用LED応用研究会 2013年12月見学・定例会

Research activity at Nagoya University Akasaki Research Center

Hiroshi AMANO

2013 Meijo International Symposium on Nitride Semiconductors (MSN 2013)

窒化物半導体デバイス開発におけるモデリングの重要性

天野　浩

応用物理学会名古屋大学スチューデントチャプター(SC)

化合物半導体系太陽光発電素子の現状と窒化物太陽光発電素子の可能性

李　昇我、本田善央、山口雅史、天野　浩、岩谷素顕

第5回薄膜太陽電池セミナー

Plasma technology as the candidate for the source of next generation LED lighting International conference

Hiroshi Amano

The GRDC symposium

Event date： 2013.10

Language：English Presentation type：Oral presentation (invited, special)

Country：Korea, Republic of

By PA-MBE using HDRS, growth rate of InGaN as high as 1.6 microns/hr and threading dislocation density as low as 4E9cm-2 were realized.
Degradation of mosaicity of InGaN grains with increasing InN composition was successfully suppressed.
With increasing III/V ratio, surface roughness and mosaicity of InGaN were drastically improved.
Fine PL spectrum was obtained for InGaN grown with III/V ratio of 1.46.

GaN発光デバイス

天野　浩

日本学術振興会第162 委員会　第7回ワイドバンドギャップ半導体スクール

Are we approaching the limit of the current technology? What's next? International conference

Hiroshi Amano

LED Japan Strategies in Light

LED照明の現状と今後の展望

天野　浩

ファインセラミックシンポジウム2013

Nitride-based devices on Na-flux-grown GaN substrate International conference

Tadashi Mitsunari, Kouhei Yamashita, Guangxu Ju,Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano Mamoru Imade and Yusuke Mori

IWBNS-VIII2013

可視光および X 線を用いた窒化物半導体結晶成長原子レベルその場観察

鞠　光旭、渕　真悟、田渕　雅夫、竹田　美和、本田善央、山口雅史、天野　浩

応用物理学会

Event date： 2013.9

Language：Japanese Presentation type：Oral presentation (invited, special)

Venue：同志社大学 Country：Japan

気相成長における原子レベルその場観察の必要性
気相成長における原子レベル表面反応解析の必要性
＊C　O　H 混入の無いALE成長の実現
＊各結晶面での表面反応過程の解明
＊歪緩和過程の実時間観測

Future prospects of nitride-based photovoltaic devices

Seunga Lee, Takuya Tabata, Shinta Nakagawa, Tomohiro Doi, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

2013 JSAP-MRS Joint Symposia

窒化物半導体デバイスの今後の展望

天野　浩

日本機械学会 2013年度年次大会

Event date： 2013.9

Language：Japanese Presentation type：Oral presentation (invited, special)

Venue：岡山大学 Country：Japan

＊窒化物半導体はどれくらい市場浸透しているか？
＊窒化物半導体LEDの現状と将来性
　　　　照明用に必要な要件
　　　　未来の照明用LED実現のための取り組み
＊未来の窒化物半導体デバイス開発
　　　　パワーデバイス
　　　　太陽光発電素子

LED開発の現状と照明の将来

天野　浩

照明学会

Event date： 2013.9

Language：Japanese Presentation type：Oral presentation (keynote)

Venue：名古屋大学 Country：Japan

今後大きな市場拡大が見込まれる中国等では、自然とLED関係者のモチベーションは高められる。一方今後大きな市場拡大は見込まれない我が国で、研究者が高いモチベーションを維持するのは容易ではない。今後はシーズオリエンテッドからニーズオリエンテッド、すなわちユーザー、システムサイド、或いは行政からの要求やアイディアが、高い国際競争力の新製品を生み出す原動力となる。

Growth of InGaN-based multiple-quantum-well structures by Increased pressure metalorganic vapor phase epitaxy and atomic layer epitaxy International conference

Hiroshi Amano

ICNS 10

Event date： 2013.8

Language：English Presentation type：Oral presentation (keynote)

Country：Japan

The commercialization of AlInGaN-based devices now extends from low-In-content InGaN to AlN. The remaining compositional region that has not yet been commercialized is In-rich InGaN and InN. In-rich InGaN is also very attractive, for example, it is essential for the fabrication of next-generation general lighting systems with high luminous efficacy and high color rendering index as well as high-efficiency multiple-junction photovoltaic top cells. InN-channel heterostructured field effect transistor is expected to pave the way to realizing THz transistors because of their high saturation velocity and high electron mobility. To realize such novel devices, the development of new growth technologies is indispensable.
From the thermodynamic viewpoint, high-pressure MOVPE is undoubtedly highly suitable for the growth of In-rich InGaN because the high-pressure atmosphere suppresses the decomposition of InGaN and InN at the surface. However, owing to the increase in the unwanted parasitic reaction between metalorganics and ammonia with the increase in gas density and thermal conductivity upon increasing the reactor pressure, it has been difficult to grow high-quality InGaN quantum wells by high-pressure MOVPE. To overcome this problem, we have successfully developed a new high-pressure MOVPE system that can be operated at reactor pressures of up to 10 atm. In addition, the parasitic reaction between metalorganics and ammonia can be minimized. An InGaN-based MQW grown at 6 atm exhibits strong long wavelength PL emission with a peak wavelength 120 nm longer than that grown at 1 atm. Details of the new high-pressure MOVPE system and control of the chemical kinetics and fluid dynamics will be discussed.

グリーンデバイス材料としての窒化物半導体の現状と今後の展開

天野　浩

第7回TIAナノグリーンセミナー

さまざまな基板上へのGaN系LEDの現状と展望

山田貴也、名和健吾、佐野智崇、田畑拓也、久志本真希、光成　　正、鞠　光旭、本田善央、山口雅史、天野　浩

ワイドギャップ半導体の基板から展開するデバイス

Blue and Green Light-Emitting Diodes on Na-Flux-Grown GaN Substrate Using Point Seed Method International conference

Tomotaka Sano, Tomohiro Doi, Shunko Albano Inada, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano, Mamoru Imade and Yusuke Mori

European MRS

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