研究者詳細 - 原田　俊太

論文 - 原田　俊太

分割表示 203 件中 141 - 160 件目／全件表示 >>

Dislocation Conversion during SiC Solution Growth for High-quality Crystals 査読有り

原田俊太

Materials Forum N/A 巻 2015年

Different behavior of threading edge dislocation conversion during the solution growth of 4H-SiC depending on the Burgers vector

Harada Shunta, Yamamoto Yuji, Seki Kazuaki, Horio Atsushi, Tagawa Miho, Ujihara Toru

ACTA MATERIALIA 81 巻頁： 284 - 290 2014年12月

Electrostatic acceleration of helicon plasma using a cusped magnetic field

Harada S., Baba T., Uchigashima A., Yokota S., Iwakawa A., Sasoh A., Yamazaki T., Shimizu H.

APPLIED PHYSICS LETTERS 105 巻 ( 19 ) 2014年11月

Forming two-dimensional structure of DNA-functionalized Au nanoparticles via lipid diffusion in supported lipid bilayers

Isogai Takumi, Piednoir Agnes, Akada Eri, Akahoshi Yuki, Tero Ryugo, Harada Shunta, Ujihara Toru, Tagawa Miho

JOURNAL OF CRYSTAL GROWTH 401 巻頁： 494 - 498 2014年9月

The investigation of step structure with different TSDs conversion behavior during 4H-SiC solution growth

Xiao Shiyu, Hara Natsumi, Harada Shunta, Ujihara Toru

JSAP Annual Meetings Extended Abstracts 2014.2 巻 ( 0 ) 頁： 3317 - 3317 2014年9月

Defect evolution in high-quality 4H-SiC grown by solution method

Harada, S; Tagawa, M; Ujihara, T

ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES 70 巻頁： C1415 - C1415 2014年8月

Defect evolution in high-quality 4H-SiC grown by solution method

Harada S, Tagawa M, Ujihara T

ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES 70 巻頁： C1415 - C1415 2014年8月

Emergence and Amplification of Chirality via Achiral-Chiral Polymorphic Transformation in Sodium Chlorate Solution Growth

Niinomi Hiromasa, Miura Hitoshi, Kimura Yuki, Uwaha Makio, Katsuno Hiroyasu, Harada Shunta, Ujihara Toru, Tsukamoto Katsuo

CRYSTAL GROWTH & DESIGN 14 巻 ( 7 ) 頁： 3596 - 3602 2014年7月

Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method 査読有り

Yamamoto Yuji, Harada Shunta, Seki Kazuaki, Horio Atsushi, Mitsuhashi Takato, Koike Daiki, Tagawa Miho, Ujihara Toru

APPLIED PHYSICS EXPRESS 7 巻 ( 6 ) 頁： 065501 2014年6月

Solubility measurement of a metastable achiral crystal of sodium chlorate in solution growth

Niinomi Hiromasa, Horio Atsushi, Harada Shunta, Ujihara Toru, Miura Hitoshi, Kimura Yuki, Tsukamoto Katsuo

JOURNAL OF CRYSTAL GROWTH 394 巻頁： 106 - 111 2014年5月

Nitrogen doping of 4H-SiC by the top-seeded solution growth technique using Si-Ti solvent

Kusunoki Kazuhiko, Kamei Kazuhito, Seki Kazuaki, Harada Shunta, Ujihara Toru

JOURNAL OF CRYSTAL GROWTH 392 巻頁： 60 - 65 2014年4月

Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC 査読有り

T. Umezaki, D. Koike, A. Horio, S. Harada, and T. Ujihara

Materials Science Forum 778-780 巻頁： 63-66 2014年1月

Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent 査読有り

S. Harada, Y. Yamamoto, S. Xiao, M. Tagawa, and T. Ujihara

Materials Science Forum 778-780 巻頁： 67-70 2014年1月

"Direct measurement of conduction miniband structure in superlattice by visible-light photoemission spectroscopy"

F. Ichihashi, D. Shimura, K. Nishitani, T. Kawaguchi, M. Kuwahara, T. Ito, S. Harada, H. Katsuno, M. Tagawa, T.Ujihara

Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th , 8-13 June 2014 頁： 2882-2885 2014年

Different behavior of threading edge dislocation conversion during the solution growth of 4H-SiC depending on the Burgers vector 査読有り

S. Harada, Y. Yamamoto, K. Seki, A. Horio, M. Tagawa, T. Ujihara

Acta Materialia 81 巻頁： pp. 284-290 2014年

Direct Measurement of Conduction Miniband Structure in Superlattice by Visible-Light Photoemission Spectroscopy

Ichihashi Fumiaki, Shimura Daiki, Nishitani Kenji, Kawaguchi Takahiko, Kuwahara Makoto, Ito Takahiro, Harada Shunta, Katsuno Hiroyasu, Tagawa Miho, Ujihara Tofu

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) 頁： 2882 - 2885 2014年

SiC結晶成長における多形制御 : 速度論的多形制御法の提案(3C-SiC溶液成長を例に)(<特集>準安定相の形成と結晶成長)

関和明, 原田俊太, 宇治原徹

日本結晶成長学会誌 40 巻 ( 4 ) 頁： 253 - 260 2014年

掲載種別：研究論文（学術雑誌）出版者・発行元：日本結晶成長学会

Silicon carbide forms polytypes due to different stacking arrangements of Si and C. For the use of semiconductor materials, it is necessary to fabricate a single polytype material. In this paper, firstly, determination factors of polytypes are introduced from both experimental and theoretical viewpoints, and the difficulty of the polytype control based on thermal stability is shown. Next, the actual control techniques in sublimation growth method and CVD method are shown to be based on the concept that the polytype sequence of seed crystal continues to the grown crystal. Finally, we propose the kinetic polytype control method based on the growth speed difference among polytypes in SiC solution growth.

DOI： 10.19009/jjacg.40.4_253

Direct measurement of conduction miniband structure in superlattice by visible-light photoemission spectroscopy

Ichihashi F.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 頁： 2882 - 2885 2014年

Achiral Metastable Crystals of Sodium Chlorate Forming Prior to Chiral Crystals in Solution Growth

Niinomi Hiromasa, Yamazaki Tomoya, Harada Shunta, Ujihara Toru, Miura Hitoshi, Kimura Yuki, Kuribayashi Takahiro, Uwaha Makio, Tsukamoto Katsuo

CRYSTAL GROWTH & DESIGN 13 巻 ( 12 ) 頁： 5188 - 5192 2013年12月

SiC 結晶成長における多形制御～速度論的多形制御法の提案（3C-SiC 溶液成長を例に）～

関和明、原田俊太、宇治原　徹

日本結晶成長学会誌, 40 巻 ( 4 ) 頁： 253 2013年12月

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