研究者詳細 - 原田　俊太

論文 - 原田　俊太

分割表示 203 件中 61 - 80 件目／全件表示 >>

機械学習を活用した SiC 高品質結晶成長条件のデザイン招待有り査読有り

原田俊太，林宏益，角岡洋介，朱燦，鳴海大翔，沓掛健太朗，宇治原徹

まてりあ 59 巻 ( 3 ) 頁： 145 - 152 2020年3月

Effect of Crystal Orientation of Cu Current Collectors on Cycling Stability of Li Metal Anodes

Ishikawa Kohei, Harada Shunta, Tagawa Miho, Ujihara Toru

ACS APPLIED MATERIALS & INTERFACES 12 巻 ( 8 ) 頁： 9341 - 9346 2020年2月

Application of C-face dislocation conversion to 2 inch SiC crystal growth on an off-axis seed crystal

Liu Xinbo, Zhu Can, Harada Shunta, Tagawa Miho, Ujihara Toru

CRYSTENGCOMM 21 巻 ( 47 ) 頁： 7260 - 7265 2019年12月

Nondestructive visualization of threading dislocations in GaN by micro raman mapping

Kokubo Nobuhiko, Tsunooka Yosuke, Fujie Fumihiro, Ohara Junji, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SC ) 2019年6月

SiC溶液成長による高品質化と機械学習の応用招待有り査読有り

原田俊太，朱燦，角岡洋介，沓掛健太朗，宇治原徹

14 巻 ( 1 ) 頁： 13 - 18 2019年6月

SiC溶液成長による高品質化と機械学習の応用招待有り査読有り

原田俊太, 朱燦, 角岡洋介, 沓掛健太朗, 宇治原徹

14 巻 ( 1 ) 頁： 13 - 18 2019年6月

Evaluation of basal plane dislocation behavior in the epitaxial layer on a 4H-SiC wafer fabricated by the solution growth method

Seki K.

Materials Science Forum 963 MSF 巻頁： 80 - 84 2019年

結晶成長学的見地による金属負極の析出形態と結晶方位の相関解明

石川晃平, 三橋貴仁, 伊藤靖仁, 竹内幸久, 原田俊太, 田川美穂, 宇治原徹

日本結晶成長学会誌 46 巻 ( 1 ) 頁： 136-140 2019年

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：日本結晶成長学会

<p> Metal anodes are promising materials for rechargeable batteries because of the higher capacity. However, low cycle efficiency due to non-uniform deposition prevents them from realization. In this review, we report the crystal orientation dependence of the deposition shape of Li and Zn, which are known as attractive materials for anodes. The result shows that the both of Li and Zn morphology has crystal orientation dependence.</p>

DOI： 10.19009/jjacg.46-1-08

機械学習を用いた結晶成長予測モデルの構築とその応用

宇治原徹, 角岡洋介, 畑佐豪記, 沓掛健太朗, 石黒祥生, 村山健太, 鳴海大翔, 原田俊太, 田川美穂

表面と真空 62 巻 ( 3 ) 頁： 136 - 140 2019年

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：公益社団法人日本表面真空学会

<p>The prediction model of the result of computed fluid dynamics simulation in SiC solution growth was constructed on neural network using machine learning. Utilizing the prediction model, we can optimize quickly crystal growth conditions. In addition, the real-time visualization system was also made using the prediction model.</p>

DOI： 10.1380/vss.62.136

CiNii Books

CiNii Research

Machine learning for SiC top-seeded solution growth - Prediction, optimization and visualization 査読有り

Toru Ujihara, Yosuke Tsunooka, Goki Hatasa, Can Zhu, Kentaro Kutsukake, Taka Narumi, Shunta Harada, Miho Tagawa

CS MANTECH 2019 - 2019 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers 2019年

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）

© 2019 CS Mantech. All rights reserved. We are developing solution growth technique for high-quality SiC bulk crystal. In actual, we have achieved high-quality crystal with very-low-density of threading dislocations grown by controlling the surface morphology. In order to apply this technique to large-scale crystal growth, it is necessary to control supersaturation at growth surface, flow rate and flow direction of solvent in detail. However, there are many growth parameters which should be optimized. Simulation technique based on computational fluid dynamics (CFD) is often used. However, it is still difficult to optimize growth condition by utilizing simulation technique since the calculation speed of CFD simulation is not enough to optimize the growth conditions, exhaustively. In recent, informatics including machine learning is applied to various fields including materials science. In this study, we tried to apply machine learning to the analysis of the results of CFD. We could make the model to optimize the crystal growth parameters based on a neural network model. Using the model, the optimization time became 10000 times faster. This is just a trial of “Process Informatics”.

Scopus

Machine learning for SiC top-seeded solution growth - Prediction, optimization and visualization

Ujihara T.

CS MANTECH 2019 - 2019 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers 2019年

Improvement mechanism of sputtered AlN films by high-temperature annealing

Xiao Shiyu, Suzuki Ryoya, Miyake Hideto, Harada Shunta, Ujihara Toru

JOURNAL OF CRYSTAL GROWTH 502 巻頁： 41 - 44 2018年11月

High-speed prediction of computational fluid dynamics simulation in crystal growth

Tsunooka Yosuke, Kokubo Nobuhiko, Hatasa Goki, Harada Shunta, Tagawa Miho, Ujihara Toru

CRYSTENGCOMM 20 巻 ( 41 ) 頁： 6546 - 6550 2018年11月

Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping

Kokubo Nobuhiko, Tsunooka Yosuke, Fujie Fumihiro, Ohara Junji, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru

APPLIED PHYSICS EXPRESS 11 巻 ( 11 ) 2018年11月

Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC

Kato Masashi, Katahira Shinya, Ichikawa Yoshihito, Harada Shunta, Kimoto Tsunenobu

JOURNAL OF APPLIED PHYSICS 124 巻 ( 9 ) 2018年9月

GaN基板からエピタキシャル膜へ伝播する転位の分類と挙動の解明

井爪将, 小久保信彦, 山田永, 恩田正一, 大原淳士, 原田俊太, 田川美穂, 宇治原徹

応用物理学会学術講演会講演予稿集 2018.2 巻 ( 0 ) 頁： 3248 - 3248 2018年9月

In Situ Observation of Chiral Symmetry Breaking in NaClO3 Chiral Crystallization Realized by Thermoplasmonic Micro-Stirring

Niinomi Hiromasa, Sugiyama Teruki, Tagawa Miho, Harada Shunta, Ujihara Tom, Uda Satoshi, Miyamoto Katsuhiko, Omatsu Takashige

CRYSTAL GROWTH & DESIGN 18 巻 ( 8 ) 頁： 4230 - 4239 2018年8月

Direct observation of stacking fault shrinkage in 4H-SiC at high temperatures by in-situ X-ray topography using monochromatic synchrotron radiation

Fujie Fumihiro, Harada Shunta, Koizumi Haruhiko, Murayama Kenta, Hanada Kenji, Tagawa Miho, Ujihara Toru

APPLIED PHYSICS LETTERS 113 巻 ( 1 ) 2018年7月

Development of angle-resolved spectroscopy system of electrons emitted from a surface with negative electron affinity state

Ichihashi Fumiaki, Dong Xinyu, Inoue Akito, Kawaguchi Takahiko, Kuwahara Makoto, Ito Takahiro, Harada Shunta, Tagawa Miho, Ujihara Toru

REVIEW OF SCIENTIFIC INSTRUMENTS 89 巻 ( 7 ) 2018年7月

Detection of edge component of threading dislocations in GaN by Raman spectroscopy

Kokubo Nobuhiko, Tsunooka Yosuke, Fujie Fumihiro, Ohara Junji, Hara Kazukuni, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru

APPLIED PHYSICS EXPRESS 11 巻 ( 6 ) 2018年6月

　前のページ - 次のページ　

<原田 俊太>

論文 - 原田 俊太

<原田　俊太>

論文 - 原田　俊太