Presentations -
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MOVPE成長したGaN/AlN/Siの電流電圧特性(Ⅱ) International conference
近藤広幸, 加藤智志, 本田善央, 山口雅史, 澤木宣彦
第52回応用物理学関係連合講演会 2005.3.29
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MOVPE 法による Si 基板上への GaN/AlN ピラミッド構造の作製 International conference
本田善央, 中村剛, 山口雅史, 澤木宣彦
信学会電子デバイス(ED)研究会 2004.5.13
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MOVPE growth and cathodoluminescence properties of GaN microcrystal co-doped with Zn and Si
MOVPE growth and cathodoluminescence properties of GaN microcrystal co-doped with Zn and Si 2006.1.4
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InGaN成長中の光散乱を用いたin situ観察と成長機構 International conference
本田善央, 田村彰, 山本哲也, 久志本真希, 天野浩
第23回シンポジウム「窒化物半導体の成長技術とメカニズム理解 2015.5.22
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InGaN 系光デバイスの成長と特性評価 International conference
本田善央, 田村彰, 山本哲也, 李 昇我, 久志本真希, 天野浩
STR 結晶成長 結晶成長 とデバイス 解析 2015.6.26
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InGaN growth mechanism evaluation by In-situ monitoring based on LAS
Yoshio Honda, Akira Tamura, Tetsuya Yamamoto, Maki Kushimoto, Hiroshi Amano
2015 German-Japanese-Spanish Joint Workshop 2015.7.13
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In-situ monitoring of Laser absorption and scattering method during InGaN growth by MOVPE Invited
Yoshio Honda, Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Kentaro Nagamatsu, Maki Kushimoto, Shugo Nitta, Hiroshi Amano
The 7th International Symposium on Advanced Science and Technology of Silocon Material 2016.11.21
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In-situ monitoring of InGaN MOVPE-growth by Laser Absorption and Scattering method
Yoshio Honda, Tetsuya Yamamoto, AkiraTamura, Tadashi Mitsunari, Hiroshi Amano
2015.2.20
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In-situ monitoring of InGaN growth by Laser absorption and scattering method Invited
Yoshio Honda, Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Kentaro Nagamatsu, Maki Kushimoto, Shugo Nitta, Hiroshi Amano
SPIE 2016.2.16