Presentations -
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MOVPE 法による Si 基板上への GaN/AlN ピラミッド構造の作製 International conference
本田善央, 中村剛, 山口雅史, 澤木宣彦
信学会電子デバイス(ED)研究会 2004.5.13
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MOVPE growth and cathodoluminescence properties of GaN microcrystal co-doped with Zn and Si
MOVPE growth and cathodoluminescence properties of GaN microcrystal co-doped with Zn and Si 2006.1.4
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InGaN成長中の光散乱を用いたin situ観察と成長機構 International conference
本田善央, 田村彰, 山本哲也, 久志本真希, 天野浩
第23回シンポジウム「窒化物半導体の成長技術とメカニズム理解 2015.5.22
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InGaN 系光デバイスの成長と特性評価 International conference
本田善央, 田村彰, 山本哲也, 李 昇我, 久志本真希, 天野浩
STR 結晶成長 結晶成長 とデバイス 解析 2015.6.26
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InGaN growth mechanism evaluation by In-situ monitoring based on LAS
Yoshio Honda, Akira Tamura, Tetsuya Yamamoto, Maki Kushimoto, Hiroshi Amano
2015 German-Japanese-Spanish Joint Workshop 2015.7.13
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In-situ monitoring of Laser absorption and scattering method during InGaN growth by MOVPE Invited
Yoshio Honda, Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Kentaro Nagamatsu, Maki Kushimoto, Shugo Nitta, Hiroshi Amano
The 7th International Symposium on Advanced Science and Technology of Silocon Material 2016.11.21
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In-situ monitoring of InGaN MOVPE-growth by Laser Absorption and Scattering method
Yoshio Honda, Tetsuya Yamamoto, AkiraTamura, Tadashi Mitsunari, Hiroshi Amano
2015.2.20
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In-situ monitoring of InGaN growth by Laser absorption and scattering method Invited
Yoshio Honda, Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Kentaro Nagamatsu, Maki Kushimoto, Shugo Nitta, Hiroshi Amano
SPIE 2016.2.16
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HVPE growth of GaN on a GaN templated (111) Si substrate
HVPE growth of GaN on a GaN templated (111) Si substrate 2002.7.22
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High pressure InGaN growth on Sapphire substrate by MOVPE
Yoshio Honda, Tomohiro Doi, Masahito Yamaguchi, Hiroshi Amano
2013 JSAP-MRS Joint Symposia Symposium J(18p-M6-1) 2013.9.16
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Growth of a GaN crystal free from cracks on a (111)Si substrate by selective MOVPE
Growth of a GaN crystal free from cracks on a (111)Si substrate by selective MOVPE 2001.7.30
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Growth of (1-101)GaN on a 7 degree off oriented (001)Si substrate by selective MOVPE
Growth of (1-101)GaN on a 7 degree off oriented (001)Si substrate by selective MOVPE 2001.7.30
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GaN基板上GaN系パワーデバイス開発 International conference
本田 善央, 出来 真斗, 天野浩
JST懇話会 2014.12.17
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GaN micro-structure on Si substrate
GaN micro-structure on Si substrate 2005.12.15
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Defects in III-nitrides grown on patterned Si substrate
Defects in III-nitrides grown on patterned Si substrate 2004.3.5
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Cathodoluminescence properties of InGaN codoped with Zn and Si
Cathodoluminescence properties of InGaN codoped with Zn and Si 2005.8.28
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(110)Si 基板を用いた無極性(11-20)GaN の結晶成長 International conference
本田善央
特定領域研究「窒化物光半導体のフロンティア －材料潜在能力の極限発現－」公開シンポジウム 2008.8.1
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世界を照らす青色LED International conference
本田善央
第20回東海地区分析研究会講演会 2015.10.16
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世界を照らす青色発光ダイオード International conference
本田善央
第58回名大カフェ 2015.6.24
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加圧MOVPEによるInGaN結晶成長 International conference
坂倉誠也, 土井友博, 谷川智之, 本田善央, 山口雅史, 天野浩
第59回 応用物理学関係連合講演会 2012.3.15