研究者詳細 - 大野　雄高

論文 - 大野　雄高

分割表示 341 件中 141 - 160 件目／全件表示 >>

Fabrication and characterization of peapod field-effect transistors using peapods synthesized directly on Si substrate

Kurokawa Y, Ohno Y, Shimada T, Ishida M, Kishimoto S, Okazaki T, Shinohara H, Mizutani T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 巻 ( 42-45 ) 頁： L1341 - L1343 2005年

記述言語：日本語出版者・発行元：Japanese Journal of Applied Physics, Part 2: Letters

We have successfully fabricated carbon nanopeapod field-effect transistors (FETs) using peapods synthesized directly on a SiO2/Si substrate. Single-walled carbon nanotubes (SWNTs) for pods were synthesized on the substrate by utilizing position-controlled chemical vapor deposition. The end caps of the SWNTs were removed by oxidation by baking in air. Insertion of fullerenes into the cap-opened SWNTs was performed by the vapor phase doping method. Fabricated Gd@C82 peapod FETs showed ambipolar characteristics. We have estimated the bandgap of the Gd@C peapod to be ∼100meV from the temperature dependence of the drain current. © 2005 The Japan Society of Applied Physics.

DOI： 10.1143/JJAP.44.L1341

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CiNii Research

Fabrication and characterization of carbon nanotube FETs

Mizutani T, Ohno Y

QUANTUM SENSING AND NANOPHOTONIC DEVICES II 5732 巻頁： 28 - 36 2005年

Origin of the 2450 cm(-1) Raman bands in HOPG, single-wall and double-wall carbon nanotubes

Shimada T, Sugai T, Fantini C, Souza M, Cancado LG, Jorio A, Pimenta MA, Salto R, Gruneis A, Dresselhaus G, Dresselhaus MS, Ohno Y, Mizutani T, Shinohara H

CARBON 43 巻 ( 5 ) 頁： 1049 - 1054 2005年

Surface potential transient of AlGaN/GaN HEMTs measured by Kelvin probe force microscopy

Nakagami K, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS 184 巻頁： 275 - 278 2005年

Surface potential measurements of AlGaN/GaN high-electron-mobility transistors by Kelvin probe force microscopy

Nakagami K, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

APPLIED PHYSICS LETTERS 85 巻 ( 24 ) 頁： 6028 - 6029 2004年12月

Fluid dynamic assembly of semiconductor blocks for heterogeneous integration

Soga I, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 43 巻 ( 9A ) 頁： 5951 - 5954 2004年9月

Direct observation of high-frequency chaos signals from the resonant tunneling chaos generator

Maezawa K, Kawano Y, Ohno Y, Kishimoto S, Mizutani T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 43 巻 ( 8A ) 頁： 5235 - 5238 2004年8月

Drain current DLTS of AlGaN-GaN MIS-HEMTs

Okino T, Ochiai A, Ohno Y, Kishimoto S, Maezawa K, Mizutani I

IEEE ELECTRON DEVICE LETTERS 25 巻 ( 8 ) 頁： 523 - 525 2004年8月

Fabrication technique for carbon nanotube single-electron transistors using focused ion beam

Kurokawa Y, Ohno Y, Kishimoto S, Okazaki T, Shinohara H, Mizutani T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 43 巻 ( 8A ) 頁： 5669 - 5670 2004年8月

Double-wall carbon nanotube field-effect transistors: Ambipolar transport characteristics

Shimada T, Sugai T, Ohno Y, Kishimoto S, Mizutani T, Yoshida H, Okazaki T, Shinohara H

APPLIED PHYSICS LETTERS 84 巻 ( 13 ) 頁： 2412 - 2414 2004年3月

Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors

Ohno Y, Nakao T, Kishimoto S, Maezawa K, Mizutani T

APPLIED PHYSICS LETTERS 84 巻 ( 12 ) 頁： 2184 - 2186 2004年3月

Transport properties of C-78, C-90 and Dy@C-82 fullerenes-nanopeapods by field effect transistors

Shimada T, Ohno Y, Okazaki T, Sugai T, Suenaga K, Kishimoto S, Mizutani T, Inoue T, Taniguchi R, Fukui N, Okubo H, Shinohara H

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 21 巻 ( 2-4 ) 頁： 1089 - 1092 2004年3月

Chirality assignment of individual single-walled carbon nanotubes in carbon nanotube field-effect transistors by micro-photocurrent spectroscopy

Ohno Y, Kishimoto S, Mizutani T, Okazaki T, Shinohara H

APPLIED PHYSICS LETTERS 84 巻 ( 8 ) 頁： 1368 - 1370 2004年2月

Drain current DLTS of AlGaN/GaN HEMTs

Mizutani T, Okino T, Kawada K, Ohno Y, Kishimoto S, Maezawa K

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 200 巻 ( 1 ) 頁： 195 - 198 2003年11月

Fabricated on a GaAs-based semiconductor-on-insulator substrate using a spin-on-low-k dielectric film

Sato K, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42 巻 ( 11 ) 頁： 6839 - 6840 2003年11月

Experimental demonstration of capacitor-coupled resonant tunneling logic gates for ultra-short gate-delay operation

Tanaka T, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 42 巻 ( 11 ) 頁： 6766 - 6771 2003年11月

88 GHz dynamic 2 : 1 frequency divider using resonant tunnelling chaos circuit

Kawano Y, Ohno Y, Kishimoto S, Maezawa K, Mizutani T, Sano K

ELECTRONICS LETTERS 39 巻 ( 21 ) 頁： 1546 - 1548 2003年10月

A study on current collapse in AlGaN/GaN HEMTs induced by bias stress

Mizutani T, Ohno Y, Akita M, Kishimoto S, Maezawa K

IEEE TRANSACTIONS ON ELECTRON DEVICES 50 巻 ( 10 ) 頁： 2015 - 2020 2003年10月

Position-controlled carbon nanotube field-effect transistors fabricated by chemical vapor deposition using patterned metal catalyst

Ohno Y, Iwatsuki S, Hiraka T, Okazaki T, Kishimoto S, Maezawa K, Shinohara H, Mizutani T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42 巻 ( 6B ) 頁： 4116 - 4119 2003年6月

AlGaN/GaN heterostructure metal-insulator-semiconductor high-electron-mobility transistors with Si3N4 gate insulator

Ochiai M, Akita M, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42 巻 ( 4B ) 頁： 2278 - 2280 2003年4月

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