研究者詳細 - 大野　雄高

論文 - 大野　雄高

分割表示 341 件中 181 - 200 件目／全件表示 >>

Temperature distributions in AlGaN/GaN HEMTs measured by micro-Raman scattering spectroscopy

Ohno Y, Akita M, Kishimoto S, Maezawa K, Mizutani T

INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS 頁： 57 - 60 2002年

A delta-sigma analog-to-digital converter using resonant tunneling diodes

Yokoyama Y, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 40 巻 ( 10A ) 頁： L1005 - L1007 2001年10月

Resonant-tunneling-injection photoluminescence of single InAs self-assembled quantum dots embedded in a thin AlGaAs barrier

Ohno Y, Kishimoto S, Maezawa K, Mizutani T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 40 巻 ( 3B ) 頁： 2065 - 2068 2001年3月

A Delta-Sigma Analog-to-Digital Converter Using Resonant Tunneling Diodes.

Yokoyama Yuji, Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi

Japanese Journal of Applied Physics 40 巻 ( 10A ) 頁： L1005 - L1007 2001年

記述言語：英語出版者・発行元：The Japan Society of Applied Physics

A novel delta-sigma (ΔΣ) analog-to-digital converter (ADC) using resonant tunneling diodes (RTDs) is proposed. A ΔΣ modulator circuit, which is the key element of the ΔΣ ADC, can be designed in a very simple form using a monostable-bistable transition logic element (MOBILE). The operation of this ΔΣ modulator circuit is confirmed by numerical simulation.

DOI： 10.1143/jjap.40.l1005

CiNii Research

High-speed operation of a novel frequency divider using resonant tunneling chaos circuit

Kawano Y, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS 頁： 236 - 239 2001年

Resonant-Tunneling-Injection Photoluminescence of Single InAs Self-Assembled Quantum Dots Embedded in a Thin AlGaAs Barrier.

Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi

Japanese Journal of Applied Physics 40 巻 ( 3B ) 頁： 2065 - 2068 2001年

記述言語：英語出版者・発行元：The Japan Society of Applied Physics

We have investigated resonant-tunneling-injection photoluminescence (PL) of single InAs self-assembled quantum dots (QDs) which were embedded in the barrier layer of an n-GaAs/i-AlGaAs/n-GaAs tunneling diode. A triangular structure in the PL intensity-voltage characteristics of a single PL line was observed. This reflects the electron tunneling from a three-dimensional emitter to the zero-dimensional quantum level of the QD. In addition, three subpeaks and a broad bulge of the PL were superimposed on the triangular structure. The subpeaks were ascribed to the resonant tunneling of holes into valence quantum levels of the QD. The origin of the excess PL bulge which is obtained at off-resonance bias condition is also discussed.

DOI： 10.1143/jjap.40.2065

CiNii Research

Observation of resonant tunneling through single self-assembled InAs quantum dots using electrophotoluminescence spectroscopy

Ohno Y, Asaoka K, Kishimoto S, Maezawa K, Mizutani T

JOURNAL OF APPLIED PHYSICS 87 巻 ( 9 ) 頁： 4332 - 4336 2000年5月

Photoluminescence study of resonant tunneling transistor with p(+)/n-junction gate

Ohno Y, Kishimoto S, Maezawa K, Mizutani T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 39 巻 ( 1 ) 頁： 35 - 40 2000年1月

Photoluminescence Study of Resonant Tunneling Teansistor with p+/n-Junction Gate.

Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi

Japanese Journal of Applied Physics 39 巻 ( 1 ) 頁： 35 - 40 2000年

記述言語：英語出版者・発行元：The Japan Society of Applied Physics

We studied photoluminescence (PL) of a resonant tunneling transistor with a p+/n-junction gate. The excitation energy was selected to be close to the band-gap energy of the GaAs collector layer 1) so as not to excite the barrier layer and quantum well directly, and 2) in order to obtain a simple luminescence spectrum. The PL signal shows strong correlation with the resonant tunneling current. The PL peak position shows a redshift with increasing collector voltage, indicating the existence of the quantum-confined Stark effect. The collector voltage dependence of the PL linewidth suggests the existence of charge accumulation in the quantum well. The accumulated electron density and the charging time were estimated. It was also shown that the PL intensity could be controlled by the gate voltage without affecting the resonant tunneling behavior of electrons.

DOI： 10.1143/jjap.39.35

CiNii Research

Optoelectronic flexible-function logic gate using monostable-bistable transition of serially connected resonant tunneling transistors

Ohno Y, Kishimoto S, Maezawa K, Mizutani T, Akeyoshi T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 38 巻 ( 4B ) 頁： 2586 - 2589 1999年4月

Measurements of electroluminescence intensity distribution in the direction of gate width of n(+) self-aligned gate GaAs metal-semiconductor field-effect transistors

Niwa H, Ohno Y, Kishimoto S, Maezawa K, Mizutani T, Yamazaki H, Taniguchi T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 38 巻 ( 3A ) 頁： 1363 - 1364 1999年3月

Microscopic photoluminescence study of InAs single quantum dots grown on (100) GaAs

Asaoka K, Ohno Y, Kishimoto S, Mizutani T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 38 巻 ( 1B ) 頁： 546 - 549 1999年1月

Photoluminescence intensity enhancement by electron beam irradiation into GaAs quantum wells

Murata T, Ohno Y, Kishimoto S, Mizutani T

SOLID-STATE ELECTRONICS 43 巻 ( 1 ) 頁： 147 - 152 1999年1月

Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors.

Niwa Hiroyuki, Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi, Yamazaki Hajime, Taniguchi Toru

Japanese Journal of Applied Physics 38 巻 ( 3A ) 頁： 1363 - 1364 1999年

記述言語：英語出版者・発行元：The Japan Society of Applied Physics

We studied electroluminescence (EL) intensity distributions in the direction of gate width of n+ self-aligned gate GaAs metal-semiconductor field-effect transistors (MESFETs). Nonuniform EL was observed along the gate-width direction, suggesting the nonuniform high-field formation in the direction of the gate. It has also been found that the EL at the source side shows gentler distribution than that at the drain side. These features suggest that the nonuniform hole distribution generated by impact ionization at the drain side becomes gradual during the process of their flow into the source and gate electrodes.

DOI： 10.1143/jjap.38.1363

CiNii Research

Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tanneling Transitors.

Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi, Akeyoshi Tomoyuki

Japanese Journal of Applied Physics 38 巻 ( 4B ) 頁： 2586 - 2589 1999年

記述言語：英語出版者・発行元：The Japan Society of Applied Physics

A novel optoelectronic resonant tunneling logic gate, OE MOBILE, is proposed and its basic logic functions such as NOT, NOR, NAND, OR, and AND are confirmed for optical inputs. The fundamental idea is to use optical inputs to determine the logic level of the gate which consists of two serially connected resonant tunneling transistors (RTTs) with a p+/n-junction gate. The OE MOBILE is operated by oscillating bias voltage to employ monostable-bistable transition. At the time when the transition occurs, the optical inputs are applied by illuminating the RTTs to control their peak currents and consequently to determine the output logic levels. The power of an optical input for logic operations is as small as 5 µW owing to the operation based on monostable-bistable transition. It should be pointed out that the functions of an OE MOBILE can be changed between NOR and NAND by changing the control terminal voltage.

DOI： 10.1143/jjap.38.2586

CiNii Research

Microscopic Photoluminescence Study of InAs Single Quantum Dots Grown on (100) GaAs.

Asaoka Kazuya, Ohno Yutaka, Kishimoto Shigeru, Mizutani Takashi

Japanese Journal of Applied Physics 38 巻 ( 1B ) 頁： 546 - 549 1999年

記述言語：英語出版者・発行元：The Japan Society of Applied Physics

We report ultranarrow (≤60 µeV) photoluminescence (PL) lines originating from single InAs quantum dots (QDs) sandwiched by Al0.35Ga0.65As barrier layers, demonstrating their δ-function-like density of states (DOS). The temperature dependence of the full-width at half maximum (FWHM) was studied between 10 and 90 K. It linearly increased with increasing temperature from 40 to 80 K (~7 µeV/K), suggesting the existence of an excitonic dephasing mechanism. Pure dephasing of excitons due to exciton-phonon interactions in acoustic phonon mode was suggested as a possible mechanism for the PL line broadening.

DOI： 10.1143/jjap.38.546

CiNii Research

Spray-coated carbon nanotubes as alternatives to ITO electrodes for inverted perovskite solar cells 査読有り Open Access

N. Ueoka, M. Yagisawa, H. Oshima, K. Higuchi, Y. Hijikata, M. Matsunaga, Y. Ohno, H.-S. Lin, and Y. Matsuo

2025年3月

Carrier Doping in Semiconducting Carbon Nanotubes with Fluorosumanenes 査読有り

H. Uchiyama, T. Nakano, Y. Yakiyama, H. Sakurai, Y. Gao, M. Maruyama, S. Okada, H. Kataura, Y. Ohno

2024年10月

Feature Articles] MoS2 Nanogenerators: Harvesting Energy from Droplet Movement 招待有り査読有り国際誌

A. S. Aji and Y. Ohno

AAPPS Bulletin 30 巻 ( 4 ) 頁： 10 - 15 2020年8月

Clinical impact of the loss of chromosome 7q on outcomes of patients with myelodysplastic syndromes treated with allogeneic hematopoietic stem cell transplantation

Itonaga Hidehiro, Ishiyama Ken, Aoki Kazunari, Aoki Jun, Ishikawa Takayuki, Ohashi Kazuteru, Fukuda Takayuki, Ozawa Yukiyasu, Ota Shuichi, Uchida Naoyuki, Eto Tetsuya, Iwato Koji, Ohno Yuju, Takanashi Minoko, Ichinohe Tatsuo, Atsuta Yoshiko, Miyazaki Yasushi

BONE MARROW TRANSPLANTATION 54 巻 ( 9 ) 頁： 1471 - 1481 2019年9月

　前のページ - 次のページ　

<大野 雄高>

論文 - 大野 雄高

<大野　雄高>

論文 - 大野　雄高