研究者詳細 - 大野　雄高

論文 - 大野　雄高

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AIGaN/GaN high electron mobility transistors with inclined-gate-recess structure

Aoi Y., Ohno Y., Kishimoto S., Maezawa K., Mizutani T.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 45 巻 ( 4 B ) 頁： 3368 - 3371 2006年4月

記述言語：日本語出版者・発行元：Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

We have studied an inclined-gate-recess structure in order to clarify the effect of increasing the electric field in the channel. Two-dimensional device simulation has revealed that the electric field and the electron velocity in the channel have increased by the inclined-gate-recess structure, which leads to an improvement of gm. AlGaN/GaN high electron mobility transistors (HEMTs) with inclined-gate-recess have been fabricated. Improved gm and fT have been obtained, which confirms the importance of increasing the electric field in the channel. © 2006 The Japan Society of Applied Physics.

DOI： 10.1143/JJAP.45.3368

Scopus

AlGaN/GaN high electron mobility transistors with inclined-gate-recess structure

Aoi Yuma, Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 巻 ( 4B ) 頁： 3368 - 3371 2006年4月

Photoluminescence of single-walled carbon nanotubes in field-effect transistors

Ohno Y, Kishimoto S, Mizutani T

NANOTECHNOLOGY 17 巻 ( 2 ) 頁： 549 - 555 2006年1月

記述言語：日本語出版者・発行元：Nanotechnology

We have studied the photoluminescence (PL) of individual single-walled carbon nanotubes (SWNTs) placed in field-effect transistor structures. The SWNTs were suspended in the air so that strong PL was obtained. When an external bias voltage was applied to the device, no spectral changes could be detected, but the intensity drastically increased or decreased. This behaviour is explained by the injection/extraction of carriers from/to the electrodes by the electric field. In the case of p-type FETs in the air, PL intensity increased due to hole injection by applying a small negative gate bias. After the device was heated in vacuum, the maximum PL intensity was obtained at zero gate bias. This can be explained by the change in the interface between the SWNT and contact electrodes. The drain field dependence of the PL intensity shows a monotonic decrease, which is explained by a competition between the recombination lifetime and transit time of photo-excited carriers in the SWNT. Using analytical steady-state rate equations on carrier density in the SWNT, the relation between the recombination lifetime and carrier transit time has been evaluated. The carrier saturation velocity has also been estimated. © 2006 IOP Publishing Ltd.

DOI： 10.1088/0957-4484/17/2/035

Web of Science

Scopus

(解説)カーボンナノチューブのフォトルミネッセンス

大野雄高

ナノ学会会報 4 頁： 67 2006年

27aUA-1 カーボンナノチューブの蛍光の環境効果 : カイラリティ依存性(27aUA ナノチューブ光物性I,領域7(分子性固体・有機導体))

大野雄高, 岩崎慎也, 村上陽一, 岸本茂, 丸山茂夫, 水谷孝

日本物理学会講演概要集 61.1.4 巻 ( 0 ) 頁： 805 2006年

AlGaN/GaN MIS-HEMTs with ZrO<inf>2</inf> gate insulator

Sugimoto T., Ohno Y., Kishimoto S., Maezawa K., Osaka J., Mizutani T.

Institute of Physics Conference Series 184 巻頁： 279 - 282 2005年12月

記述言語：日本語出版者・発行元：Institute of Physics Conference Series

AlGaN/GaN MIS-HEMTs using ZrO2 gate insulator with a large dielectric constant have been successfully fabricated. The gate leakage current decreased by more than three orders of magnitude compared to that of the conventional AlGaN/GaN HEMTs without the ZrO2 gate insulator. Current collapse has also been suppressed in the MIS-HEMTs. The decrease in g mmax, which was observed in the case of Si3N4 MIS-HEMTs, was suppressed in the present MIS-HEMTs demonstrating the effectiveness of the ZrO2 gate insulator. © 2005 IOP Publishing Ltd.

Scopus

Electron traps in AlGaN/GaN MIS-HEMTs observed by drain current DLTS

Okino T., Ohno Y., Kishimoto S., Maezawa K., Osaka J., Mizutani T.

Institute of Physics Conference Series 184 巻頁： 271 - 274 2005年12月

Surface potential transient of AlGaN/GaN HEMTs measured by Kelvin probe force microscopy

Nakagami K., Ohno Y., Kishimoto S., Maezawa K., Mizutani T.

Institute of Physics Conference Series 184 巻頁： 275 - 278 2005年12月

記述言語：日本語出版者・発行元：Institute of Physics Conference Series

Surface potential of the AlGaN/GaN high-electron-mobility transistors was measured by Kelvin probe force microscopy to study the mechanism of the drain current collapse. The potential after the gate bias stress increased due to the emission of trapped electrons from the surface states. The time constant of the potential increase was 75 s, which was comparable to that of the drain current recovery from the collapsed level. © 2005 IOP Publishing Ltd.

Scopus

Deep levels in n-type AlGaN grown by hydride vapor-phase epitaxy on sapphire characterized by deep-level transient spectroscopy

Osaka J, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

APPLIED PHYSICS LETTERS 87 巻 ( 22 ) 頁： 1 - 3 2005年11月

記述言語：日本語出版者・発行元：Applied Physics Letters

Deep levels in unintentionally doped n -type Al0.09 Ga0.91 N and Al0.17 Ga0.83 N films grown on sapphire by hydride vapor-phase epitaxy were characterized using capacitance deep-level transient spectroscopy and were compared to the reported electron traps in GaN grown by various techniques. It was shown that at least three dominant deep levels exist in each sample. The Al mole fraction dependence of their activation energy suggested that each of these three levels has the same origin as the three dominant well known point-defect-related deep levels in GaN, respectively. It is thought that deep levels in GaN change their electric characteristics in low Al content AlGaN. © 2005 American Institute of Physics.

DOI： 10.1063/1.2137901

Web of Science

Scopus

Direct integration of GaAsHEMTs on AlN ceramic substrates using fluidic self-assembly

Soga I, Hayashi S, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

ELECTRONICS LETTERS 41 巻 ( 23 ) 頁： 1275 - 1276 2005年11月

記述言語：日本語出版者・発行元：Electronics Letters

Direct integration of AlGaAs/GaAs HEMTs on AlN ceramic substrates has been demonstrated based on the fluidic self-assembly (FSA) technology. The FSA is a unique technology to arrange small device blocks (around a few tens of microns) onto the other substrates. With this technology the core part of the HEMT having no pad can be mounted on the ceramic substrate. The HEMT core can then be connected electrically with the circuit on a ceramic substrate using a planar wiring process. This eliminates large stray capacitance and inductance in the conventional technology. It has been demonstrated that the good FET characteristics are obtained even after FSA process. © IEE 2005.

DOI： 10.1049/el:20052840

Web of Science

Scopus

Metamorphic resonant tunneling diodes and its application to chaos generator ICs

Maezawa K, Iwase T, Ohno Y, Kishimoto S, Mizutani T, Sano K, Takakusaki M, Nakata H

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 巻 ( 7A ) 頁： 4790 - 4794 2005年7月

Effects of fabrication process on current-voltage characteristics of carbon nanotube field effect transistors

Mizutani T, Iwatsuki S, Ohno Y, Kishimoto S

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 巻 ( 4A ) 頁： 1599 - 1602 2005年4月

Growth of mm-long carbon nanotubes by grid-inserted plasma-enhanced chemical vapor deposition

Kishimoto S, Kojima Y, Ohno Y, Sugai T, Shinohara H, Mizutani T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 巻 ( 4A ) 頁： 1554 - 1557 2005年4月

Growth of high-quality carbon nanotubes by grid-inserted plasma-enhanced chemical vapor deposition for field emitters

Kojima Y, Kishimoto S, Ohno Y, Sakai A, Mizutani T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 巻 ( 4B ) 頁： 2600 - 2603 2005年4月

Photoresponse of carbon nanotube field-effect transistors

Ohno Y, Kishimoto S, Mizutani T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 巻 ( 4A ) 頁： 1592 - 1595 2005年4月

n-Type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes

Nosho Y, Ohno Y, Kishimoto S, Mizutani T

APPLIED PHYSICS LETTERS 86 巻 ( 7 ) 2005年2月

Synthesis of carbon nanotube peapods directly on Si substrates

Ohno Y, Kurokawa Y, Kishimoto S, Mizutani T, Shimada T, Ishida M, Okazaki T, Shinohara H, Murakami Y, Maruyama S, Sakai A, Hiraga K

APPLIED PHYSICS LETTERS 86 巻 ( 2 ) 2005年1月

Tunable field-effect transistor device with metallofullerene nanopeapods

Shimada T, Ohno Y, Suenaga K, Okazaki T, Kishimoto S, Mizutani T, Taniguchi R, Kato H, Cao BP, Sugai T, Shinohara H

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 巻 ( 1A ) 頁： 469 - 472 2005年1月

AlGaN/GaN MIS-HEMTs with ZrO2 gate insulator

Sugimoto T, Ohno Y, Kishimoto S, Maezawa K, Osaka J, Mizutani T

COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS 184 巻頁： 279 - 282 2005年

Electron traps in AlGaN/GaN MIS-HEMTs observed by drain current DLTS

Okino T, Ohno Y, Kishimoto S, Maezawa K, Osaka J, Mizutani T

COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS 184 巻頁： 271 - 274 2005年

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