Papers - TABUCHI, Masao
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"Fluorescence EXAFS study on local structures around Eu atoms implanted in AlxGa1-xN" Reviewed
H. Ofuchi, T. Nishiwaki, K. Takaba, K. Ogawa, M. Tabuchi, Y. Takeda, A. Wakahara, A. Yoshida, T. Ohshima, and H. Itoe
Physica B Vol. 376 page： 496-498 2006
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"Surface morphology of ErP layers on InP and Ga0.52In0.48P" Reviewed
A. Koizumi, H. Ohnishi, T. Inoue, T. Yamauchi, I. Yamakawa, H. Ofuchi, M. Tabuchi, A. Nakamura, Y. Takeda
Thin Solid Films Vol. 515 page： 543-546 2006
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"Perturbation method of analysis of crystal truncation rod data" Reviewed
I. K. Robinson, M. Tabuchi, S. Hisadome, R. Oga, and Y. Takeda
J. Appl. Cryst. Vol. 38 page： 299-305 2005
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"Lowest limit for detection of impurity concentration in semiconductors by fluorescence XAFS: resonant Raman scattering and angle depende Reviewed
Y. Takeda, H. Ofuchi, H. Kyouzu, R. Takahashi and M. Tabuchi
J. Synchrotron. Radiat. Vol. 12 page： 494-498 2005
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"Applications ofstatistical X-ray diffraction theory for characterisation of multilayer systems" Reviewed
K.M. Pavlov, V.I. Punegov, L. Kirste, N. Herres, Y. Takeda, M. Tabuchi, M. Morgan, S. Mudie, and J. Hester
Izvestiya Akademii Nauk. Seriya fizicheskaya. Vol. 68 page： 573-577 2004
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"Collection of reciprocal space maps using imaging plates at the Australian National Beamline Facility at the Photon Factory" Reviewed
S.T. Mudie, K.M. Pavlov, M.J. Morgan, J.R. Hester, M. Tabuchi, and Y. Takeda
J. Synchrotron Radiation Vol. 11 page： 406-413 2004
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"Crystalline structure and the role of low-temperature-deposited AlN and GaN on sapphire revealed by X-ray CTR scattering and X-ray reflectivity measurements" Reviewed
Y. Takeda, M. Tabuchi, H. Amano, and I. Akasaki
Surf. Rev. Lett. Vol. 10 page： 537-541 2003
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"High-resolution X-ray diffractometry investigation of interface layers in GaN/AlN structures grown on sapphire substrates" Reviewed
S. Mudie, K. Pavlov, M. Morgan, M. Tabuchi, Y. Takeda, and H. Hester
Surf. Rev. Lett. Vol. 10 page： 513-517 2003
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"Local structures around Er atoms doped in GaAs by low-temperature molecular beam exitaxy" Reviewed
K. Ogawa, H. Ofuchi, H. Maki, T. Sonoyama, D. Inoue, M.Tabuchi, and Y. Takeda
Materials Science in Semiconductor Processing Vol. 6 page： 425-427 2003
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"Fluorescence EXAFS analysis for ErP grown on by organometallic vapor phase epitaxy using a new organometal Er(EtCp)3" Reviewed
H. Ofuchi, T. Akane, S. Jinno, Y. Yang, N. Kuno, T. Hirata, M. Tabuchi, Y. Fujiwara, and Y. Takeda
Materials Science in Semiconductor Processing Vol. 6 page： 469-472 2003
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"Composition dependences of InP/InGaAsP/InP interface structures analyzed by X-ray CTR scattering measurements" Reviewed
M. Tabuchi, H. Kyouzu, M. Takemi, and Y. Takeda
Appl. Surf. Sci Vol. 216 page： 526-531 2003
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"X-ray CTR scattering and interference for atomic-scale characterization of semiconductor heterostructures" Reviewed
Y. Takeda, and M. Tabuchi
J. Cryst. Growth Vol. 237-239 page： 330-337 2002
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"Characterization of local structures around In atoms in GaInN layers by fluorescence EXAFS measurements" Reviewed
M. Tabuchi, D. Katou, H. Kyouzu, Y. Takeda, S. Yamaguchi, H. Amano, and I. Akasaki
J. Cryst. Growth Vol. 237-239 page： 1139-1142 2002
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"Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layers" Reviewed
M. Tabuchi, H. Kyouzu, Y. Takeda, S. Yamaguchi, H. Amano, I. Akasaki
J. Cryst. Growth Vol. 237-239 page： 1133-1138 2002
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"Observation of composition in surface monolayers by X-ray scattering spectra caused by crystal truncation and interferences"
Journal of Synchrotron Radiation Vol. 5 page： 899 1998
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"Determination of composition in InP/InGaAs/InP quantum-well structures by X-ray crystal truncation rod scattering and quantum levels"
Journal of Crystal Growth Vol. 186 page： 48 1998
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"Thermal diffusion of Er atomsδ-doped in Inp"
Applied Surface Science Vol. 130-132 page： 393 1998
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"Crystal quality and surface structure of sapphire and buffer layers on sapphire revealed by crystal truncation rod scattering"
Journal of Crystal Growth Vol. 189 ( 190/ ) page： 291 1998
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EXAFS measurement on local structures around erbium atoms doped in GaAs with oxgen co-doping
Defectin Semiconductors ICDS-19, Trans Tech Pub. LTD. page： 1571 1997
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Fe/Cu多層構造中のFe原子周辺局所構造の蛍光EXAFS法による解析
日本応用磁気学会誌 Vol. 21 page： 82 1997