Faculty Profiles - TABUCHI, Masao

Papers - TABUCHI, Masao

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In situ growth of superconducting NdFeAs(O,F) thin films by molecular beam epitaxy Reviewed

T. Kawaguchi, H. Uemura1, T. Ohno, M. Tabuchi, T. Ujihara, K. Takenaka, Y. Takeda, and H. Ikuta

Appl. Phys. Lett. Vol. 97 page： 042509 2010

High-Brightness Spin-Polarized Electron Source Using Semiconductor Photocathodes Reviewed

Tomohiro Nishitani, Masao Tabuchi, Yoshikazu Takeda, Yuji Suzuki, Kazuya Motoki, and Takashi Meguro

Vol. 48 page： 06FF02-1-3 2009

Measurement of X-ray CTR Signals from GaN/GaInN/GaN at High Temperatures Using Newly Developed Measurement System, Reviewed

Y. Takeda, T. Mizuno, H. Kamiya, K. Ninoi, and M. Tabuchi

Trans. Mat. Res. Soc. Jpn. Vol. 34 page： 585-588 2009

Superlattice Photocathode with High Brightness and Long NEA-Surface Lifetime Reviewed

Tomohiro Nishitani, Masao Tabuchi, Yoshikazu Takeda, Yuji Suzuki, Kazuya Motoki, and Takashi Meguro,

AIP Conf. Proc. Vol. 1149 page： 1047-1051 2009

Study on Accumulation process of As atoms in InP/GaInAs/InP hetero-structures, Reviewed

M. Tabuchi, A. Mori, H. Tameoka, K. Fujii, and Y. Takeda

Trans. Mat. Res. Soc. Jpn. Vol. 34 page： 593-595 2009

*Development of New X-ray CTR Scattering Measurement System Using Johansson Monochromator Reviewed

M. Tabuchi, H. Tameoka, T. Kawase, and Y. Takeda

Trans. Mat. Res. Soc. Jpn. Vol. 34 page： 589-591 2009

Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

A new X-ray CTR scattering measurement system was reported that was equipped with a Johansson monocromator to focus X-rays at a sample position. Using the focused X-rays and a two-dimensional detector, X-ray CTR scattering measurement was able to be carried out without moving any component of the measurement system. The results of the X-ray CTR scattering measurement using the new system successfully demonstrated that the CTR scattering profiles were comparable to that measured at PF using synchrotron radiation even when the measurement time was 10 minutes or longer. The results suggested that the new measurement system is useful for quick and in-situ X-ray CTR scattering measurements.

Fluorescence EXAFS study of residual Ga in b-FeSi2 grownfrom Ga solvent Reviewed

H. Yamada, M. Tabuchi, Y. Takeda, and H. Udono

J. Phys., Conf. Ser. Vol. 190 page： 012069 2009

Effect of Ln-site disorder on Tc of oxypnictide superconductor LnFeAsOF (Ln=Nd, Cd-Gd, and La-Dy) Reviewed

Koshi Takenaka, Ryotaro Watanabe, Hiroomi Yamada, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Ikuta

J. Phys. Soc. Jpn. Vol. 78 page： 073701-1-4 2009

Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy Reviewed

Takahiko Kawaguchi, Hiroki Uemura, Toshiya Ohno, Ryotaro Watanabe, Masao Tabuchi, Toru Ujihara, Koshi Takenaka, Yoshikazu Takeda, and Hiroshi Ikuta

Applied Physics Express Vol. 2 page： 093002 2009

X-ray CTR scattering measurements using conventional X-ray source to study semiconductor hetero-interfaces Reviewed

Y. Maeda, T. Mizuno, A. Mori, M. Tabuchi, and Y. Takeda

Trans. Mat. Res. Soc. Jpn. Vol. 33 page： 591-594 2008

Buried Heterostructure of Nitride Semiconductors Revealed by Laboratory Level X-ray CTR Scattering Reviewed

Y. Takeda, Y. Maeda, T. Mizuno, and M. Tabuchi

Trans. Mat. Res. Soc. Jpn. Vol. 33 page： 547-550 2008

Surface X-ray diffraction studies of CaF2(110)/Si(001) interface formation Reviewed

T. Shimura, S.M. Suturin, N.S. Sokolov, A.G. Banshchikov, R.N. Kyutt, O. Sakata, J. Harada, M. Tabuchi, Y. Takeda

{Acta Cryst. Vol. A64 page： C556 2008

*"Formation of patterned GaInAs/GaAs hetero-structures using amorphous arsenic mask" Reviewed

Y. Noritake, T. Yamada, M. Tabuchi, and Y. Takeda

J. Cryst. Growth Vol. 301-302 page： 876-879 2007

X-ray CTR scattering measurement to investigate the formation process of InP/GaInAs interface Reviewed

M. Tabuchi, A. Mori, Y. Ohtake, and Y. Takeda

J. Phys.: Conference Series Vol. 83 page： 012031 2007

Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

It has been successfully shown that X-ray CTR scattering measurement is a good tool to study the formation process of the InP/GaInAs interfaces grown by OMVPE even when the measurement is conducted after the growth. Using the X-ray CTR scattering measurement, the contributions of effects, i.e., surface roughness, adsorption of atoms, and exchange of
atoms, on the formation process of InP/GaInAs interface were able to be discussed. The adsorption of As atoms on the GaInAs surface was shown to have the largest contribution on
the abruptness of the interface.

The importance to reveal buried interfaces in the semiconductor heterostructure devices Reviewed

Y. Takeda, and M. Tabuchi

J. Phys.: Conference Series Vol. 83 page： 012002 2007

*"Atomic scale analysis of MOVPE grown heterostructures by X-ray crystal truncation rod scattering measurement" Reviewed

M. Tabuchi, and Y. Takeda

J. Cryst. Growth Vol. 298 page： 12-17 2007

"Measurement of Compositional Grading at InP/GaInAs/InP Hetero-interfaces by X-ray CTR Scattering Using Synchrotron Radiation" Reviewed

Y. Ohtake, T. Eguchi, S. Miyake, W.S. Lee, M. Tabuchi, and Y. Takeda

AIP Conference Proceedings Vol. 879 page： 1619-1622 2007

"Analysis of In Distribution in GaInN/GaN Multilayer Structures by X-ray CTR Scattering" Reviewed

M. Tabuchi, Y. Ohtake, and Y. Takeda

Transactions of the Materials Research Society of Japan Vol. 32 ( 9 ) page： 219-222 2007

"Study on Buried Interfaces in Semiconductor Heterostructures by X-ray Reflectivity" Reviewed

Y. Takeda, and M. Tabuchi

Transactions of the Materials Research Society of Japan Vol. 32 ( 1 ) page： 187-192 2007

Structure and surface morphology of MnF2 epitaxial layers grown on grooved and ridged CaF2 (110) surface Reviewed

R.N. Kyutt, A.K. Kaveev, N.S. Sokolov, A.A. Lomov, Y. Ohtake, M. Tabuchi, and Y. Takeda

J. Phys. D: Appl Vol. 40 page： 4896-4901 2007

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Papers - TABUCHI, Masao