Papers - TABATA, Akimori
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Temperature dependences of current density-voltage and capacitance-frequency characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes Reviewed
Akimori, Tabata
Thin Solid Films Vol. 619 page： 323 - 327 2016
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Current density-voltage and admittance characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes prepared with varying H2 gas flow rates Reviewed
A. Tabata, Y. Imori
Solid-State Electronics Vol. 104 page： 33-38 2015.2
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N2 post-deposition treatment on silicon thin films with a hot-wire chemical vapor method at a low wire-temperature Reviewed
Y. Omori, A. Tabata, A. Kondo
Thin Solid Films Vol. 519 ( 14 ) page： 4535 – 4537 2011.5
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Structural changes in tungsten wire and their effect on the properties of hydrogenated nanocrystalline silicon carbide thin films Reviewed
A. Tabata, A. Naito
Thin Solid Films Vol. 519 ( 14 ) page： 4451 – 4454 2011.5
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Enhancement of Crystal Growth in Si Thin Film Deposition by H-Radical-Assisted Magnetron Sputtering Reviewed
K. Fukaya, A. Tabata, K. Sasaki
Jpn. J. Appl. Phys. Vol. 49 ( 1 ) page： 015501 2010
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* Highly-conductive nitrogen-doped hydrogenated nanocrystalline cubic silicon carbide thin films prepared by hot-wire chemical vapor deposition Reviewed
A. Tabata, Y. Hoshide, A. Kondo
Material Science and Engineering B Vol. 175 page： 201-206 2010
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* Influence of hydrogen addition and gas pressure on silicon nitride layer formation on microcrystalline silicon thin films by a hot-wire chemical vapor method using nitrogen gas Reviewed
A. Tabata, K. Mazaki, A. Kondo
Surf. Coat. Technol. Vol. 204 ( 16-17 ) page： 2559- 2563 2010
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* Film-thickness dependence of structural and electrical properties of boron-doped hydrogenated microcrystalline silicon prepared by radiofrequency magnetron sputtering Reviewed
A. Tabata, J. Nakano, K. Mazaki, K. Fukaya,
J. Non-Cryst. Solids Vol. 356 page： 1131-1134 2010
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Mechanism of hydrogenated microcrystalline Si film deposition by magnetron sputtering employing a Si target and H2/Ar gas mixture Reviewed
K. Fukaya, A. Tabata, K. Sasaki
Jpn. J. Appl. Phys. Vol. 48 ( 3 ) page： 035507 2009
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Influences of N2 and H2 gas flow rates on properties of n-type nanocrystalline 3C-SiC:H thin films prepared by hot-wire chemical vapor deposition Reviewed
A. Tabata, Y. Hoshide, A. Kondo
ECS Transaction Vol. 25 ( 8 ) page： 207-212 2009
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N2 decomposition by hot wire and N2 post-deposition treatment on hydrogenated microcrystalline silicon thin films. Reviewed
K. Mazaki A. Tabata, A. Kitagawa, A. Kondo
Thin Solids Films Vol. 517 page： 3452-3455 2009
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Growth of silicon carbide thin films by hot-wire chemical vapor deposition form SiH4/CH4/H2. Reviewed
A. Tabata, Y. Konura, T. Narita, A. Kondo
Thin Solids Films Vol. 517 page： 3516-3519 2009
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Preparation of n-type nanocrystalline 3C-SiC films by hot-wire CVD using N2 as doping gas Reviewed
Y. Hoshide, A. Tabata, A. Kitagawa A. Kondo
Thin Solids Films Vol. 517 page： 3524-3527 2009
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Importance of H2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH4/CH4/H2 Reviewed
Y. Hoshide, Y. Komura A. Tabata, A. Kitagawa A. Kondo
Thin Solids Films Vol. 517 page： 3520-3523 2009
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Formation of silicon nitride layer on microcrystalline silicon thin films by hot-wire chemical vapor method using nitrogen and hydrogen gases Reviewed
A. Tabata, K. Mazaki, A. Kondo
ECS Transaction Vol. 25 ( 8 ) page： 339-342 2009
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Structural Changes of Hot-Wire CVD Silicon Carbide Thin Films Induced by Gas Flow Rates Reviewed
A. Tabata, M. Mori
Thin Solid Films Vol. 516, ( 5 ) page： 626-629 2008.1
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Properties of nanocrystalline silicon carbide thin films prepared by hot-wire chemical vapor deposition using SiH4/CH4/H2 at various substrate temperatures Reviewed
A. Tabata,Y. Komura, Y. Hoshide, T. Narita, A. Kondo
Jpn. J. Appl. Phys. Vol. 47 ( 1 ) page： 561-565 2008.1
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Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H2 system Reviewed
Y. Komura, A. Tabata, T. Narita, A. Kondo
Thin Solid Films Vol. 516 ( 516 ) page： 633-636 2008.1
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Influence of ion bombardment on microcrystalline silicon growth during radio-frequency magnetron sputtering Reviewed
A. Tabata, K. Fukaya, T. Mizutani
Vacuum Vol. 82 page： 777-781 2008
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Film properties of nanocrystalline 3C-SiC thin films deposited on glass substrate by hot-wire chemical vapor deposition using CH4 as a carbon source Reviewed
Y. Komura A. Tabata T. Narita M. Kanaya A. Kondo T. Mizutani
Jpn J. Appl. Phys. Vol. 46 ( 1 ) page： 45-50 2007.1