Papers - TABATA, Akimori
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Temperature dependences of current density-voltage and capacitance-frequency characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes Reviewed
Akimori, Tabata
Thin Solid Films Vol. 619 page： 323 - 327 2016
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Current density-voltage and admittance characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes prepared with varying H2 gas flow rates Reviewed
A. Tabata, Y. Imori
Solid-State Electronics Vol. 104 page： 33-38 2015.2
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N2 post-deposition treatment on silicon thin films with a hot-wire chemical vapor method at a low wire-temperature Reviewed
Y. Omori, A. Tabata, A. Kondo
Thin Solid Films Vol. 519 ( 14 ) page： 4535 – 4537 2011.5
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Structural changes in tungsten wire and their effect on the properties of hydrogenated nanocrystalline silicon carbide thin films Reviewed
A. Tabata, A. Naito
Thin Solid Films Vol. 519 ( 14 ) page： 4451 – 4454 2011.5
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Enhancement of Crystal Growth in Si Thin Film Deposition by H-Radical-Assisted Magnetron Sputtering Reviewed
K. Fukaya, A. Tabata, K. Sasaki
Jpn. J. Appl. Phys. Vol. 49 ( 1 ) page： 015501 2010
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* Highly-conductive nitrogen-doped hydrogenated nanocrystalline cubic silicon carbide thin films prepared by hot-wire chemical vapor deposition Reviewed
A. Tabata, Y. Hoshide, A. Kondo
Material Science and Engineering B Vol. 175 page： 201-206 2010
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* Influence of hydrogen addition and gas pressure on silicon nitride layer formation on microcrystalline silicon thin films by a hot-wire chemical vapor method using nitrogen gas Reviewed
A. Tabata, K. Mazaki, A. Kondo
Surf. Coat. Technol. Vol. 204 ( 16-17 ) page： 2559- 2563 2010
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* Film-thickness dependence of structural and electrical properties of boron-doped hydrogenated microcrystalline silicon prepared by radiofrequency magnetron sputtering Reviewed
A. Tabata, J. Nakano, K. Mazaki, K. Fukaya,
J. Non-Cryst. Solids Vol. 356 page： 1131-1134 2010
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Mechanism of hydrogenated microcrystalline Si film deposition by magnetron sputtering employing a Si target and H2/Ar gas mixture Reviewed
K. Fukaya, A. Tabata, K. Sasaki
Jpn. J. Appl. Phys. Vol. 48 ( 3 ) page： 035507 2009
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Influences of N2 and H2 gas flow rates on properties of n-type nanocrystalline 3C-SiC:H thin films prepared by hot-wire chemical vapor deposition Reviewed
A. Tabata, Y. Hoshide, A. Kondo
ECS Transaction Vol. 25 ( 8 ) page： 207-212 2009
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N2 decomposition by hot wire and N2 post-deposition treatment on hydrogenated microcrystalline silicon thin films. Reviewed
K. Mazaki A. Tabata, A. Kitagawa, A. Kondo
Thin Solids Films Vol. 517 page： 3452-3455 2009
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Growth of silicon carbide thin films by hot-wire chemical vapor deposition form SiH4/CH4/H2. Reviewed
A. Tabata, Y. Konura, T. Narita, A. Kondo
Thin Solids Films Vol. 517 page： 3516-3519 2009
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Preparation of n-type nanocrystalline 3C-SiC films by hot-wire CVD using N2 as doping gas Reviewed
Y. Hoshide, A. Tabata, A. Kitagawa A. Kondo
Thin Solids Films Vol. 517 page： 3524-3527 2009
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Importance of H2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH4/CH4/H2 Reviewed
Y. Hoshide, Y. Komura A. Tabata, A. Kitagawa A. Kondo
Thin Solids Films Vol. 517 page： 3520-3523 2009
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Formation of silicon nitride layer on microcrystalline silicon thin films by hot-wire chemical vapor method using nitrogen and hydrogen gases Reviewed
A. Tabata, K. Mazaki, A. Kondo
ECS Transaction Vol. 25 ( 8 ) page： 339-342 2009
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Structural Changes of Hot-Wire CVD Silicon Carbide Thin Films Induced by Gas Flow Rates Reviewed
A. Tabata, M. Mori
Thin Solid Films Vol. 516, ( 5 ) page： 626-629 2008.1
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Properties of nanocrystalline silicon carbide thin films prepared by hot-wire chemical vapor deposition using SiH4/CH4/H2 at various substrate temperatures Reviewed
A. Tabata,Y. Komura, Y. Hoshide, T. Narita, A. Kondo
Jpn. J. Appl. Phys. Vol. 47 ( 1 ) page： 561-565 2008.1
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Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H2 system Reviewed
Y. Komura, A. Tabata, T. Narita, A. Kondo
Thin Solid Films Vol. 516 ( 516 ) page： 633-636 2008.1
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Influence of ion bombardment on microcrystalline silicon growth during radio-frequency magnetron sputtering Reviewed
A. Tabata, K. Fukaya, T. Mizutani
Vacuum Vol. 82 page： 777-781 2008
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Film properties of nanocrystalline 3C-SiC thin films deposited on glass substrate by hot-wire chemical vapor deposition using CH4 as a carbon source Reviewed
Y. Komura A. Tabata T. Narita M. Kanaya A. Kondo T. Mizutani
Jpn J. Appl. Phys. Vol. 46 ( 1 ) page： 45-50 2007.1
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Preparation of nanocrystalline silicon carbide thin films by hot-wire CVD at various filament-to-substrate distances Reviewed
A. Tabata, Y. Komura
Surf. Coat. Technol. Vol. 201 page： 8986-8990 2007
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Structure of amorphous and microcrystalline silicon thin films prepared at various gas pressures and gas flow rates by hot-wire chemical vapor deposition Reviewed
T. Daimaru, A. Tabata, T. Mizutani
Thin Solid Films Vol. 501 ( 1-2 ) page： 102-106 2006
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Effect of hot-wire passivation on film properties of hydrogenated microcrystalline silicon films Reviewed
S. Mitsuhashi, A. Tabata, T. Mizutani
J. Non-Cryst. Solids Vol. 352 page： 2943-2946 2006
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Nanocrystalline cubic silicon carbide prepared by hot-wire chemical vapor deposition using SiH4/CH4/H2 at a low substrate temperature Reviewed
Y. Komura, A. Tabata, T. Narita, A. Kondo, T. Mizutani
J. Non-Cryst. Solids Vol. 352 page： 1367-1370 2006
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Properties of hydrogenated amorphous silicon carbide films prepared at various hydrogen gas flow rates by hot-wire chemical vapor deposition Reviewed
M. Mori, A. Tabata, T. Mizutani
Thin Solid Film Vol. 501 ( 1-2 ) page： 177-180 2006
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Influence of target direct current bias voltage on the film structure of hydrogenated microcrystalline silicon prepared by direct-current- radiofrequency coupled magnetron sputtering Reviewed
K. Fukaya, A. Tabata, T. Mizutani
Thin Solid Films Vol. 478 ( 1-2 ) page： 132-136 2005
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Control of crystallinity and deposition rate of hydrogenated silicon thin films prepared by radio frequency magnetron sputtering using layer-by layer growth Reviewed
A. Tabata, K. Okada, T. Mizutani, Y. Suzuoki
Thin Solid Film Vol. 491 ( 1-2 ) page： 148-152 2005
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Band-gap control of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor deposition Reviewed
A. Tabata, M. Kuroda, M. Mori, T. Mizutani, Y. Suzuoki
Journal of Non-Crystalline Solids Vol. 338-340 page： 521-524 2004
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Properties of hydrogenated amorphous silicon carbide films prepared at various hydrogen gas flow rates by hot-wire chemical vapor deposition
M. Mori, A. Tabata, T. Mizutani
3rd International Conference on Hot-Wire CVD (Cat-CVD) process page： 393-395 2004
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Structure of amorphous and microcrystalline silicon thin films prepared at various gas pressures and gas flow rates by hot-wire chemical vapor deposition
T. Daimaru, A. Tabata, T. Mizutani
3rd International Conference on Hot-Wire CVD (Cat-CVD) process page： 389-392 2004
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Dependence on gas pressure of μc-Si:H prepared by RF magnetron sputtering Reviewed
K. Fukaya, A. Tabata, T. Mizutani
Vacuum Vol. 74 ( 3-4 ) page： 561-565 2004
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日射量の多地点同時観測結果に基づくＰＶシステム出力変動のＬＦＣへの影響評価 Reviewed
柳川茂幸, 加藤丈佳, 田畑彰守, 鈴置保雄
電気学会論文誌Ｂ Vol. 123 ( 12 ) page： 1504-1511 2003
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Effect of total gas pressure on hydrogenated amorphous silicon carbide films by hot-wire CVD
A. Tabata, T. Nakajima, T. Mizutani, Y. Suzuoki
3rd World Conference on Photovoltaic Energy Conversion, 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, 18th European PV Solar Energy Conference 2003
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Dependence on gas pressure of μc-Si:H prepared by RF magnetron sputtering
7th International Symposium on Sputtering and Plasma Processes page： 43-46 2003
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Structure of amorphous and microcrystalline silicon films prepared at various gas pressure by hot-wire chemical vapor deposition
T. Daimaru, A. Tabata, T. Mizutani, Y. Suzuoki
20th International Conference on Amorphous and Microcrystalline Semiconductors page： P-Tu-1/9 2003
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Preparation of microcrystalline silicon by DC-RF coupled magnetron sputtering
K. Fukaya, A. Tabata, T. Mizutani
20th International Conference on Amorphous and Microcrystalline Semiconductors page： P-Tu-1/5 2003
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Band-gap control of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor deposition
A. Tabata, M. Kuroda, T. Mizutani, Y. Suzuoki
20th International Conference on Amorphous and Microcrystalline Semiconductors page： P-Th-5/5 2003
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Preparation of wide-gap hydrogenated amorphous silicon carbide thin films by hot-wire chemical vapor deposition at a low tungsten temperature Reviewed
A. Tabata, T. Nakajima, T. Mizutani, Y. Suzuoki
Japanese Journal of Applied Physics Vol. 42 ( 1AB ) page： L10-L12 2003
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Dependence on substrate temperature of the film structure of μc-Si:H prepared by RF magnetron sputtering Reviewed
J. Kondo, A. Tabata, T. Kawamura, T. Mizutani
Vacuum Vol. 66 page： 409-413 2002
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電力需要および日射量の実績からみた太陽光発電システムのｋＷ価値
加藤丈佳, 長江宣久, 田畑彰守, 横水康伸, 岡本達生, 鈴置保雄
電気学会論文誌B Vol. 122-B ( 1-2 ) page： 77-83 2002
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電力需要および日射量の実績からみた太陽光発電システムのｋＷ価値 Reviewed
加藤丈佳, 長江宣久, 田畑彰守, 横水康伸, 岡本達生, 鈴置保雄
電気学会論文誌B Vol. 122-B ( 1 ) page： 77-83 2002
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Effect of Plasma Off Time on Structure and Electrical Properties of Hydrogenated Amorphous Silicon Carbide Films Reviewed
A. Tabata, M. Sekito, Y. Suzuoki, T. Mizutani
Japanese Journal of Applied Physics Vol. 40 ( 12 ) page： 6728 - 6731 2001
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日射量の多地点同時観測に基づく太陽光発電の出力変動に対するLFC容量の評価 Reviewed
柳川茂幸, 加藤丈佳, 呉 カイ, 田畑彰守, 横水康伸, 岡本達生, 鈴置保雄
電気学会論文誌B Vol. 121-B ( 9 ) page： 1094-1102 2001
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The changes of structural and electrical properties of hydrogenated amorphous silicon carbide films by pulse-modulated plasma
A. Tabata, M. Sekito, Y. Suzuoki, T. Mizutani
11th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide page： 5.5.11 2000
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Effect of the hydrogen partial pressure ratio on the properties of uc-Si:H films prepared by rf magnetron sputtering Reviewed
H. Makihara, A. Tabata, Y. Suzuoki, T. Mizutani
Vacuum Vol. 59 page： 785-791 2000
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* Electrical properties before and after light-soaking of hydrogenated amorphous silicon carbide films prepared by the hydrogen radical CVD method Reviewed
A. Tabata, H. Kamijo, Y. Suzuoki, T. Mizutani
J. Physl D: Appl. Phys. Vol. 32 ( 18 ) page： 2448-2453 1999
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Fabrication of polyurea thin films for optical socond-harmonic generation by vapor deposition plymerization -Effects of Roling field and monomer structure on reactivity and SHG performance Reviewed
T. Segi, T. Mizutani, Y. Suzuoki, A. Tabata, K. Takagi
IEEE Transaction on Dielectrics and Electrical Insutation Vol. 5 ( 1 ) page： 63-69 1998
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Effect of hydrogen radicals on properties and structure of a-Si1-XCx : H films Reviewed
A. Tabata, H. Kamijo, Y. Suzuoki, T. Mizutani
Journal of Non-Crystalline Solids Vol. 227-230 page： 456 1998
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Properties of Hydrogeneted Amorphons Silicon Carbide Films prpared by Pulse-Mochulated Rf Discharge
A. Tabata, Yonezu, Y. Suzuoki, T. Mizutani
4th Asian Pasific Conference on Plasma Science and Technology 11th Symposium on Plasma Science for Materials page： 107 1998
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Properties of hydrogenated amorphous silicon carbide films prepared by a separately exited plasma CVD method Reviewed
A. Tabata, Y. Kuno, Y. Suzuoki, T. Mizutani
J. Phys. D : Appl. Phys. Vol. 30 ( 2 ) page： 194 1997
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Structural Control and Optical Properties of Spiropyran LB Films(II)-Preparation Condition and Nonlinear Optical Properties- Reviewed
K. Muarase, T. Segi, A. Tabata, Y. Suzuoki, T. Mizutani
Trans. IEE of Japan. Vol. 117-A ( 2 ) page： 167-171 1997
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Transmission Electron Microscopy Observation and Third-Order Optical Nonlinearity of CdSe-doped Glass Thin Films Prepared by Ion-Beam Sputtering Method Reviewed
A. Tabata. N. Matsuno, Y. Suzuoki, T. Mizutani
Japanese Journal of Applied Physics Vol. 35 ( 5A ) page： 2646-2648 1996
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Optical Properties and structure of SiO2 films prepared by ion-beam sputtering Reviewed
A. Tabata, N. Matsuno, Y. Suzuoki, T. Mizutani
Thin Solid Films Vol. 289 page： 84-89 1996
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Influence of Poling Field on Polymerization in Polyurea Thin Films for Second-Harmonic Generation Prepared by Vapor Deposition Polymerization Reviewed
T. Segi, Y. Suzuoki, A. Tabata, T. Mizutani, K. Takagi
Japaneas Journal of Applied Physics Vol. 35 ( 8 ) page： 4444-4450 1996
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Properties of the CdSe-Doped Glass Thin Films Prepared by Ion-Beam Sputtering Method Reviewed
Y. Suzuoki, N. Matsuno, A. Tabata, T. Mizutani
Japanese Journal of Applied Physics Vol. 34 ( 3 ) page： 1631-1637 1995
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Preparation of a-SixC1-X : H films by separately-excited-plasma CVD method Reviewed
A. Tabata, Y. Kuno, Y. Suzuoki, T. Mizutani
Journal of Non-Crystalline Solids Vol. 164-166 page： 1043-1046 1993
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Structure and electrical property of hydrogenated amorphous silicon carbide by plasma CVD method Reviewed
A. Tabata, K. Tomiita, Y. Suzuoki, T. Mizutani
J. SOCIETY of Materials Engi. for resources Vol. 4 ( 2 ) page： 35-45 1991
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X-ray photoelectron spectroscopy (XPS) of hydrogenated amorphous silicon carbide (a-SiX C1-X : H) prepared by the plasma CVD method Reviewed
A. Tabata, S. Fujii, Y. Suzuoki, T. Mizutani, M. Ieda
J. Phys. D : Appl. Phys. Vol. 23 ( 3 ) page： 316-320 1990
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Thermally stimulated current (TSC) in a-Six C1-X : H films prepared by plasma CVD Reviewed
A. Tabata, T. Mizutani, A. Yoshida, M. Ieda
J. Phys. D : Appl. Phys. Vol. 22 ( 6 ) page： 794-797 1989