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Optical properties of neodymium ions in nanoscale regions of gallium nitride (vol 10, pg 2614, 2020)

Sato, SI; Deki, M; Watanabe, H; Nitta, S; Honda, Y; Nishimura, T; Gibson, BC; Greentree, AD; Amano, H; Ohshima, T

OPTICAL MATERIALS EXPRESS 11 巻 ( 2 ) 頁： 524 - 524 2021年2月

Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs 査読有り

Jadhav, A; Ozawa, T; Baratov, A; Asubar, JT; Kuzuhara, M; Wakejima, A; Yamashita, S; Deki, M; Honda, Y; Roy, S; Amano, H; Sarkar, B

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 9 巻頁： 570 - 581 2021年

Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

Ando, Y; Nagamatsu, K; Deki, M; Taoka, N; Tanaka, A; Nitta, S; Honda, Y; Nakamura, T; Amano, H

APPLIED PHYSICS LETTERS 117 巻 ( 24 ) 2020年12月

Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: from injection efficiency to mid-gap state generation

Piva, F; De Santi, C; Deki, M; Kushimoto, M; Amano, H; Tomozawa, H; Shibata, N; Meneghesso, G; Zanoni, E; Meneghini, M

PHOTONICS RESEARCH 8 巻 ( 11 ) 頁： 1786 - 1791 2020年11月

Optical properties of neodymium ions in nanoscale regions of gallium nitride

Sato, SI; Deki, M; Watanabe, H; Nitta, S; Honda, Y; Nishimura, T; Gibson, BC; Greentree, AD; Amano, H; Ohshima, T

OPTICAL MATERIALS EXPRESS 10 巻 ( 10 ) 頁： 2614 - 2623 2020年10月

Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures

Sato, S; Deki, M; Nishimura, T; Okada, H; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Ohshima, T

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 479 巻頁： 7 - 12 2020年9月

Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

Ando, Y; Nagamatsu, K; Deki, M; Taoka, N; Tanaka, A; Nitta, S; Honda, Y; Nakamura, T; Amano, H

APPLIED PHYSICS LETTERS 117 巻 ( 10 ) 2020年9月

Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures

Sandupatla, A; Arulkumaran, S; Ng, GI; Ranjan, K; Deki, M; Nitta, S; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS 13 巻 ( 7 ) 頁： . 2020年7月

Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering

Kushimoto, M; Sakai, T; Ueoka, Y; Tomai, S; Katsumata, S; Deki, M; Honda, Y; Amano, H

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 217 巻 ( 14 ) 2020年7月

Impact of high-temperature implantation of Mg ions into GaN

Takahashi, M; Tanaka, A; Ando, Y; Watanabe, H; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Shima, K; Kojima, K; Chichibu, SF; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( 5 ) 頁： . 2020年5月

Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

Takahashi, M; Tanaka, A; Ando, Y; Watanabe, H; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Shima, K; Kojima, K; Chichibu, SF; Chen, KJ; Amano, H

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 257 巻 ( 4 ) 2020年4月

Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer

Abhinay, S; Arulkumaran, S; Ng, GI; Ranjan, K; Deki, M; Nitta, S; Honda, Y; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( 1 ) 2020年1月

Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements

Piva, F; De Santi, C; Deki, M; Kushimoto, M; Amano, H; Tomozawa, H; Shibata, N; Meneghesso, G; Zanoni, E; Meneghini, M

GALLIUM NITRIDE MATERIALS AND DEVICES XV 11280 巻 2020年

Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

Liao, YQ; Chen, T; Wang, J; Ando, Y; Yang, X; Watanabe, H; Hirotani, J; Kushimoto, M; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Chen, KJ; Amano, H

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) 頁： 349 - 352 2020年

Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy α-particle detection

Sandupatia, A; Arulkurnaran, S; Ranjan, K; Ng, GI; Murumu, PP; Kennedy, J; Deki, M; Nitta, S; Honda, Y; Amano, H

2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020) 2020年

Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

Sandupatla, A; Arulkumaran, S; Ranjan, K; Ng, GI; Murmu, PP; Kennedy, J; Nitta, S; Honda, Y; Deki, M; Amano, H

SENSORS 19 巻 ( 23 ) 2019年12月

Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects

Piva, F; De Santi, C; Deki, M; Kushimoto, M; Amano, H; Tomozawa, H; Shibata, N; Meneghesso, G; Zanoni, E; Meneghini, M

MICROELECTRONICS RELIABILITY 100 巻 2019年9月

V-shaped dislocations in a GaN epitaxial layer on GaN substrate

Tanaka, A; Nagamatsu, K; Usami, S; Kushimoto, M; Deki, M; Nitta, S; Honda, Y; Bockowski, M; Amano, H

AIP ADVANCES 9 巻 ( 9 ) 2019年9月

Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

Ye, Z; Nitta, S; Nagamatsu, K; Fujimoto, N; Kushimoto, M; Deki, M; Tanaka, A; Honda, Y; Pristovsek, M; Amano, H

JOURNAL OF CRYSTAL GROWTH 516 巻頁： 63 - 66 2019年6月

Direct evidence of Mg diffusion through threading mixed dislocations in GaN p-n diodes and its effect on reverse leakage current

Usami, S; Mayama, N; Toda, K; Tanaka, A; Deki, M; Nitta, S; Honda, Y; Amano, H

APPLIED PHYSICS LETTERS 114 巻 ( 23 ) 2019年6月

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