論文 - 出来 真斗
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Ito, S; Sato, S; Bockowski, M; Deki, M; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Yoshida, K; Minagawa, H; Hagura, N
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 547 巻 2024年2月
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15 GHz GaN Hi-Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W
Kawasaki, S; Kumabe, T; Deki, M; Watanabe, H; Tanaka, A; Honda, Y; Arai, M; Amano, H
IEEE TRANSACTIONS ON ELECTRON DEVICES 2023年12月
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Lu, S; Deki, M; Kumabe, T; Wang, J; Ohnishi, K; Watanabe, H; Nitta, S; Honda, Y; Amano, H
APPLIED PHYSICS LETTERS 122 巻 ( 14 ) 2023年4月
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Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars 査読有り
Shin-ichiro Sato, Shuo Li, Andrew D. Greentree, Manato Deki, Tomoaki Nishimura, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Brant C. Gibson, and Takeshi Ohshima
Scientific Reports 12 巻 頁: 21208 2022年12月
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Substitutional diffusion of Mg into GaN from GaN/Mg mixture 査読有り
Yuta Itoh, Shun Lu, Hirotaka Watanabe, Manato Deki, Shugo Nitta, Yoshio Honda, Atsushi Tanaka, and Hiroshi Amano
APPLIED PHYSICS EXPRESS 15 巻 ( 11 ) 頁: 116505 2022年11月
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Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy 査読有り
Kazuki Ohnishi, Naoki Fujimoto, Shugo Nitta, Hirotaka Watanabe, Shun Lu, Manato Deki, Yoshio Honda, and Hiroshi Amano
Journal of Applied Physics 132 巻 頁: 145703 2022年10月
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An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs using Rational Functions and Dependent Current Sources 査読有り
Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Biplab Sarkar
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 10 巻 頁: 797 - 807 2022年9月
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Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz
Kawasaki, S; Kumabe, T; Ando, Y; Deki, M; Watanabe, H; Tanaka, A; Honda, Y; Arai, M; Amano, H
IEEE ELECTRON DEVICE LETTERS 44 巻 ( 8 ) 頁: 1328 - 1331 2023年8月
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Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars
Sato, SI; Li, S; Greentree, AD; Deki, M; Nishimura, T; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Gibson, BC; Ohshima, T
SCIENTIFIC REPORTS 12 巻 ( 1 ) 2022年12月
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Substitutional diffusion of Mg into GaN from GaN/Mg mixture
Itoh, Y; Lu, S; Watanabe, H; Deki, M; Nitta, S; Honda, Y; Tanaka, A; Amano, H
APPLIED PHYSICS EXPRESS 15 巻 ( 11 ) 2022年11月
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Ohnishi, K; Fujimoto, N; Nitta, S; Watanabe, H; Lu, S; Deki, M; Honda, Y; Amano, H
JOURNAL OF APPLIED PHYSICS 132 巻 ( 14 ) 2022年10月
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Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN 査読有り
Itoh, Y; Watanabe, H; Ando, Y; Kano, E; Deki, M; Nitta, S; Honda, Y; Tanaka, A; Ikarashi, N; Amano, H
APPLIED PHYSICS EXPRESS 15 巻 ( 2 ) 2022年2月
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Jadhav, A; Ozawa, T; Baratov, A; Asubar, JT; Kuzuhara, M; Wakejima, A; Yamashita, S; Deki, M; Nitta, S; Honda, Y; Amano, H; Roy, S; Sarkar, B
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 10 巻 頁: 797 - 807 2022年
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Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg 査読有り
Lu, S; Deki, M; Wang, J; Ohnishi, K; Ando, Y; Kumabe, T; Watanabe, H; Nitta, S; Honda, Y; Amano, H
APPLIED PHYSICS LETTERS 119 巻 ( 24 ) 2021年12月
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Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions 査読有り
Jadhav, A; Ozawa, T; Baratov, A; Asubar, JT; Kuzuhara, M; Wakejima, A; Yamashita, S; Deki, M; Nitta, S; Honda, Y; Amano, H; Roy, S; Sarkar, B
IEEE TRANSACTIONS ON ELECTRON DEVICES 68 巻 ( 12 ) 頁: 6059 - 6064 2021年12月
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Ando, Y; Deki, M; Watanabe, H; Taoka, N; Tanaka, A; Nitta, S; Honda, Y; Yamada, H; Shimizu, M; Nakamura, T; Amano, H
APPLIED PHYSICS EXPRESS 14 巻 ( 8 ) 2021年8月
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Matsukura, Y; Inazu, T; Pernot, C; Shibata, N; Kushimoto, M; Deki, M; Honda, Y; Amano, H
APPLIED PHYSICS EXPRESS 14 巻 ( 8 ) 2021年8月
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Kumabe, T; Ando, Y; Watanabe, H; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Amano, H
JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( SB ) 2021年5月
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Experimental demonstration of GaN IMPATT diode at X-band 査読有り
Kawasaki, S; Ando, Y; Deki, M; Watanabe, H; Tanaka, A; Nitta, S; Honda, Y; Arai, M; Amano, H
APPLIED PHYSICS EXPRESS 14 巻 ( 4 ) 2021年4月
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Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching 査読有り
Yamada, T; Ando, Y; Watanabe, H; Furusawa, Y; Tanaka, A; Deki, M; Nitta, S; Honda, Y; Suda, J; Amano, H
APPLIED PHYSICS EXPRESS 14 巻 ( 3 ) 2021年3月
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Optical properties of neodymium ions in nanoscale regions of gallium nitride (vol 10, pg 2614, 2020)
Sato, SI; Deki, M; Watanabe, H; Nitta, S; Honda, Y; Nishimura, T; Gibson, BC; Greentree, AD; Amano, H; Ohshima, T
OPTICAL MATERIALS EXPRESS 11 巻 ( 2 ) 頁: 524 - 524 2021年2月
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Jadhav, A; Ozawa, T; Baratov, A; Asubar, JT; Kuzuhara, M; Wakejima, A; Yamashita, S; Deki, M; Honda, Y; Roy, S; Amano, H; Sarkar, B
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 9 巻 頁: 570 - 581 2021年
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Ando, Y; Nagamatsu, K; Deki, M; Taoka, N; Tanaka, A; Nitta, S; Honda, Y; Nakamura, T; Amano, H
APPLIED PHYSICS LETTERS 117 巻 ( 24 ) 2020年12月
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Piva, F; De Santi, C; Deki, M; Kushimoto, M; Amano, H; Tomozawa, H; Shibata, N; Meneghesso, G; Zanoni, E; Meneghini, M
PHOTONICS RESEARCH 8 巻 ( 11 ) 頁: 1786 - 1791 2020年11月
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Optical properties of neodymium ions in nanoscale regions of gallium nitride
Sato, SI; Deki, M; Watanabe, H; Nitta, S; Honda, Y; Nishimura, T; Gibson, BC; Greentree, AD; Amano, H; Ohshima, T
OPTICAL MATERIALS EXPRESS 10 巻 ( 10 ) 頁: 2614 - 2623 2020年10月
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Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures
Sato, S; Deki, M; Nishimura, T; Okada, H; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Ohshima, T
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 479 巻 頁: 7 - 12 2020年9月
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Ando, Y; Nagamatsu, K; Deki, M; Taoka, N; Tanaka, A; Nitta, S; Honda, Y; Nakamura, T; Amano, H
APPLIED PHYSICS LETTERS 117 巻 ( 10 ) 2020年9月
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Sandupatla, A; Arulkumaran, S; Ng, GI; Ranjan, K; Deki, M; Nitta, S; Honda, Y; Amano, H
APPLIED PHYSICS EXPRESS 13 巻 ( 7 ) 頁: . 2020年7月
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Kushimoto, M; Sakai, T; Ueoka, Y; Tomai, S; Katsumata, S; Deki, M; Honda, Y; Amano, H
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 217 巻 ( 14 ) 2020年7月
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Impact of high-temperature implantation of Mg ions into GaN
Takahashi, M; Tanaka, A; Ando, Y; Watanabe, H; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Shima, K; Kojima, K; Chichibu, SF; Amano, H
JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( 5 ) 頁: . 2020年5月
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Takahashi, M; Tanaka, A; Ando, Y; Watanabe, H; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Shima, K; Kojima, K; Chichibu, SF; Chen, KJ; Amano, H
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 257 巻 ( 4 ) 2020年4月
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Abhinay, S; Arulkumaran, S; Ng, GI; Ranjan, K; Deki, M; Nitta, S; Honda, Y; Amano, H
JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( 1 ) 2020年1月
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Piva, F; De Santi, C; Deki, M; Kushimoto, M; Amano, H; Tomozawa, H; Shibata, N; Meneghesso, G; Zanoni, E; Meneghini, M
GALLIUM NITRIDE MATERIALS AND DEVICES XV 11280 巻 2020年
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Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes
Liao, YQ; Chen, T; Wang, J; Ando, Y; Yang, X; Watanabe, H; Hirotani, J; Kushimoto, M; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Chen, KJ; Amano, H
PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) 頁: 349 - 352 2020年
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Sandupatia, A; Arulkurnaran, S; Ranjan, K; Ng, GI; Murumu, PP; Kennedy, J; Deki, M; Nitta, S; Honda, Y; Amano, H
2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020) 2020年
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Sandupatla, A; Arulkumaran, S; Ranjan, K; Ng, GI; Murmu, PP; Kennedy, J; Nitta, S; Honda, Y; Deki, M; Amano, H
SENSORS 19 巻 ( 23 ) 2019年12月
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Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects
Piva, F; De Santi, C; Deki, M; Kushimoto, M; Amano, H; Tomozawa, H; Shibata, N; Meneghesso, G; Zanoni, E; Meneghini, M
MICROELECTRONICS RELIABILITY 100 巻 2019年9月
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V-shaped dislocations in a GaN epitaxial layer on GaN substrate
Tanaka, A; Nagamatsu, K; Usami, S; Kushimoto, M; Deki, M; Nitta, S; Honda, Y; Bockowski, M; Amano, H
AIP ADVANCES 9 巻 ( 9 ) 2019年9月
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Ye, Z; Nitta, S; Nagamatsu, K; Fujimoto, N; Kushimoto, M; Deki, M; Tanaka, A; Honda, Y; Pristovsek, M; Amano, H
JOURNAL OF CRYSTAL GROWTH 516 巻 頁: 63 - 66 2019年6月
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Usami, S; Mayama, N; Toda, K; Tanaka, A; Deki, M; Nitta, S; Honda, Y; Amano, H
APPLIED PHYSICS LETTERS 114 巻 ( 23 ) 2019年6月
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Usami, S; Tanaka, A; Fukushima, H; Ando, Y; Deki, M; Nitta, S; Honda, Y; Amano, H
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月
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Uemura, K; Deki, M; Honda, Y; Amano, H; Sato, T
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月
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Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability
Fukushima, H; Usami, S; Ogura, M; Ando, Y; Tanaka, A; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Amano, H
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月
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Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)
Liu, ZB; Nitta, S; Robin, Y; Kushimoto, M; Deki, M; Honda, Y; Pristovsek, M; Sitar, Z; Amano, H
JOURNAL OF CRYSTAL GROWTH 514 巻 頁: 13 - 13 2019年5月
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Sato, S; Deki, M; Nakamura, T; Nishimura, T; Stavrevski, D; Greentree, AD; Gibson, BC; Ohshima, T
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 5 ) 2019年5月
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Sandupatla, A; Arulkumaran, S; Ng, GI; Ranjan, K; Deki, M; Nitta, S; Honda, Y; Amano, H
AIP ADVANCES 9 巻 ( 4 ) 2019年4月
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Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy
Liu, ZB; Nitta, S; Usami, S; Robin, Y; Kushimoto, M; Deki, M; Honda, Y; Pristovsek, M; Amano, H
JOURNAL OF CRYSTAL GROWTH 509 巻 頁: 50 - 53 2019年3月
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Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al<sub>2</sub>O<sub>3</sub> Gate Dielectrics
Yoshino, M; Ando, Y; Deki, M; Toyabe, T; Kuriyama, K; Honda, Y; Nishimura, T; Amano, H; Kachi, T; Nakamura, T
MATERIALS 12 巻 ( 5 ) 2019年3月
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Morphological study of InGaN on GaN substrate by supersaturation
Liu, ZB; Nitta, S; Robin, Y; Kushimoto, M; Deki, M; Honda, Y; Pristovsek, M; Amano, H
JOURNAL OF CRYSTAL GROWTH 508 巻 頁: 58 - 65 2019年2月
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Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown
Fukushima, H; Usami, S; Ogura, M; Ando, Y; Tanaka, A; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Amano, H
APPLIED PHYSICS EXPRESS 12 巻 ( 2 ) 2019年2月
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Nagamatsu, K; Ando, Y; Ye, Z; Barry, O; Tanaka, A; Deki, M; Nitta, S; Honda, Y; Pristovsek, M; Amano, H
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 10 ) 2018年10月
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Ueoka, Y; Deki, M; Honda, Y; Amano, H
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 7 ) 2018年7月
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Tanaka, A; Ando, Y; Nagamatsu, K; Deki, M; Cheong, H; Ousmane, B; Kushimoto, M; Nitta, S; Honda, Y; Amano, H
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 215 巻 ( 9 ) 頁: 1700645 2018年5月
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Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate
Usami, S; Ando, Y; Tanaka, A; Nagamatsu, K; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Amano, H; Sugawara, Y; Yao, YZ; Ishikawa, Y
APPLIED PHYSICS LETTERS 112 巻 ( 18 ) 2018年4月
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Femtosecond-Laser-Induced Defects on Silicon Carbide Probed by Electrical Conductivity 査読有り
Tomita, T; Deki, M; Yanagita, E; Bando, Y; Naoi, Y; Makino, T; Ohshima, T
JOURNAL OF LASER MICRO NANOENGINEERING 12 巻 ( 2 ) 頁: 72 - 75 2017年9月
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Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes
Usami, S; Miyagoshi, R; Tanaka, A; Nagamatsu, K; Kushimoto, M; Deki, M; Nitta, S; Honda, Y; Amano, H
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 214 巻 ( 8 ) 2017年8月
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Tanaka, A; Barry, O; Nagamatsu, K; Matsushita, J; Deki, M; Ando, Y; Kushimoto, M; Nitta, S; Honda, Y; Amano, H
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 214 巻 ( 8 ) 2017年8月
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Barry, OI; Tanaka, A; Nagamatsu, K; Bae, SY; Lekhal, K; Matsushita, J; Deki, M; Nitta, S; Honda, Y; Amano, H
JOURNAL OF CRYSTAL GROWTH 468 巻 頁: 552 - 556 2017年6月
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Development of Sustainable Smart Society based on Transformative Electronics
Ogura, M; Ando, Y; Usami, S; Nagamatsu, K; Kushimoto, M; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Pristovsek, M; Kawai, H; Yagi, S; Amano, H
2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 頁: . 2017年
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Effect of V/III ratio on the surface morphology and electrical properties of m-plane(10-10) GaN homoepitaxial layers 査読有り
Ousmane I Barry, Atsushi Tanaka, Kentaro Nagamatsu, Si-Young Bae, Kaddour Lekhal, Junya Matsushita, Manato Deki, Shugo Nitta, Yoshio Honda and Hiroshi Amano
Journal of Crystal Growth 頁: 10.1016 2016年12月
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Structural and optical study of core-shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum 査読有り
Byung Oh Jung, Kaddour Lekhal, Dong-Seon Lee, Manto Deki, Yoshio Honda, and Hiroshi Amano
Japanese Journal of Applied Physics 頁: 05FG03 2016年4月
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Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition 査読有り
Byung Oh Jung, Kaddour Lekhal, Sang-Yun Kim, Jung-Yong Lee, Dong-Seon Lee, Manto Deki, Yoshio Honda, and Hiroshi Amano
CrystEngComm ( 18 ) 頁: 1505 2016年1月
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Linear energy transfer dependence of single event gate rupture in SiC MOS capacitors 査読有り
Deki Manato, Makino Takahiro, Iwamoto Naoya, Onoda Shinobu, Kojima Kazutoshi, Tomita Takuro, Ohshima Takeshi
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 319 巻 頁: 75-78 2014年1月
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Ternperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide 査読有り
Deki Manato, Oka Tomoki, Takayoshi Shodai, Naoi Yoshiki, Makino Takahiro, Ohshima Takeshi, Tomita Takuro
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 778-780 巻 頁: 661-664 2014年
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Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses 査読有り
Deki Manato, Makino T., Kojima K., Tomita T., Ohshima T.
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 778-780 巻 頁: 440-443 2014年
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Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes 査読有り
Makino Takahiro, Deki Manato, Iwamoto Naoya, Onoda Shinobu, Hoshino Norihiro, Tsuchida Hidekazu, Hirao Toshio, Ohshima Takeshi
IEEE TRANSACTIONS ON NUCLEAR SCIENCE 60 巻 ( 4 ) 頁: 2647-2650 2013年8月
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Electrical Conduction Properties of SiC Modified by Femtosecond Laser 査読有り
Ito Takuto, Deki Manato, Tomita Takuro, Matsuo Shigeki, Hashimoto Shuichi, Kitada Takahiro, Isu Toshiro, Onoda Shinobu, Ohshima Takeshi
JOURNAL OF LASER MICRO NANOENGINEERING 7 巻 ( 1 ) 頁: 16-20 2012年2月
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Enhancement of local electrical conductivities in SiC by femtosecond laser modification 査読有り
Deki Manato, Ito Takuto, Yamamoto Minoru, Tomita Takuro, Matsuo Shigeki, Hashimoto Shuichi, Kitada Takahiro, Isu Toshiro, Onoda Shinobu, Ohshima Takeshi
APPLIED PHYSICS LETTERS 98 巻 ( 13 ) 2011年3月
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Femtosecond laser modification aiming at the enhancement of local electric conductivities in SiC 査読有り
Deki Manato, Yamamoto Minoru, Ito Takuto, Tomita Takuro, Matsuo Shigeki, Hashimoto Shuichi, Kitada Takahiro, Isu Toshiro, Onoda Shinobu, Ohshima Takeshi
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS 1399 巻 2011年
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Single-shot picosecond interferometry with one-nanometer resolution for dynamical surface morphology using a soft X-ray laser 査読有り
Suemoto Tohru, Terakawa Kota, Ochi Yoshihiro, Tomita Takuro, Yamamoto Minoru, Hasegawa Noboru, Deki Manato, Minami Yasuo, Kawachi Tetsuya
OPTICS EXPRESS 18 巻 ( 13 ) 頁: 14114-14122 2010年6月
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Raman Spectroscopic Stress Evaluation of Femtosecond-Laser-Modified Region Inside 4H-SiC 査読有り
Yamamoto Minoru, Deki Manato, Takahashi Tomonori, Tomita Takuro, Okada Tatsuya, Matsuo Shigeki, Hashimoto Shuichi, Yamaguchi Makoto, Nakagawa Kei, Uehara Nobutomo, Kamano Masaru
Applied physics express 3 巻 ( 1 ) 頁: 16603-016603-3 2010年1月