Updated on 2025/03/30

写真a

 
KUTSUKAKE Kentaro
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section Associate Professor
Graduate School
Graduate School of Engineering
Title
Associate Professor
Contact information
メールアドレス

Degree 1

  1. 博士(理学) ( 2007.3   東北大学 ) 

Research Interests 5

  1. Silicon

  2. Solar cells

  3. Machine learning

  4. Crystal growth

  5. Crystal defects

Research Areas 5

  1. Nanotechnology/Materials / Crystal engineering

  2. Nanotechnology/Materials / Applied physical properties

  3. Nanotechnology/Materials / Applied condensed matter physics

  4. Informatics / Intelligent informatics

  5. Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

Research History 9

  1. Nagoya University   Institute of Materials and Systems for Sustainability   Associate Professor

    2024.4

  2. Tohoku University   Visiting Professor

    2023.4 - 2025.3

  3. RIKEN   Center for Advanced Intelligence Project   Researcher

    2018.11 - 2024.3

  4. Nagoya University   Institutes of Innovation for Future Society   Designated Lecturer

    2017.11

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    Country:Japan

  5. Tohoku University   Institute for Materials Research   Assistant Professor

    2010.10 - 2017.10

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    Country:Japan

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Education 3

  1. Tohoku University   Graduate School, Division of Natural Science

    2004.4 - 2007.3

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    Country: Japan

  2. Tohoku University   Graduate School, Division of Natural Science

    2002.4 - 2004.3

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    Country: Japan

  3. Tohoku University   Faculty of Science

    1998.4 - 2002.3

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    Country: Japan

Professional Memberships 6

  1. 日本機械学会

    2024.10

  2. 日本結晶成長学会

  3. 応用物理学会

  4. JSAP Informatics Professional Group

  5. JSAP Crystals Science and Technology Division

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Committee Memberships 9

  1. 応用物理学会 産学連携委員会「半導体の結晶成長と加工および評価に関する産学連携委員会」   幹事  

    2023   

  2. 日本結晶成長学会   機関紙編集委員  

    2022   

  3. 応用物理学会 インフォマティクス応用研究会   代表  

    2019   

  4. 日本学術振興会第145委員会   学界委員  

    2017.4   

  5. 日本学術振興会 第145委員会   学界委員  

    2017 - 2023   

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Awards 1

  1. 最優秀ポスター賞

    2017  

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    Country:Japan

 

Papers 125

  1. Modeling and analysis of undoped GaN grown in a horizontal laminar flow MOCVD reactor Reviewed

    Gotow, T; Sonoda, T; Takahashi, T; Yamada, H; Ide, T; Azumi, R; Shimizu, M; Tsunooka, Y; Seki, S; Kutsukake, K; Ujihara, T

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 188   2025.3

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    Language:English   Publisher:Materials Science in Semiconductor Processing  

    The modeling of undoped GaN in a horizontal laminar flow channel metal-organic chemical vapor deposition (MOCVD) reactor was investigated using a two-dimensional crystal growth simulator, STR Virtual Reactor. By calibrating the ceiling temperatures of the flow channel from the gas inlet to the outlet, a highly reliable simulation model for replicating a 4-inch MOCVD reactor was developed. The study analyzed the material properties of GaN, grown under two sets of growth pressures and gas flow rates, along the flow direction by evaluating the surface morphology, thickness, X-ray diffraction curves, and the incorporation of carbon residual impurities. We assert that gas flow velocities, CH3/NH2 and CH3/CH4 ratios are critical parameters influencing carbon concentration in GaN. These featured parameters are crucial factors in machine learning models for process informatics of GaN MOCVD.

    DOI: 10.1016/j.mssp.2024.109258

    Web of Science

    Scopus

  2. Machine learning-based laser heterodyne photothermal displacement method: simultaneous estimation of silicon thermal diffusivity and carrier lifetime Reviewed

    Shota Urano, Tomoki Harada, Tetsuo Ikari, Kentaro Kutsukake, Atsuhiko Fukuyama

    Japanese journal of applied physics   Vol. 64 ( 2 )   2025.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ada9f6

    Web of Science

    Scopus

  3. Stress analysis and dislocation cluster generation in silicon crystal with artificial grain boundaries Reviewed

    Haruki Tajika, Kentaro Kutsukake, Noritaka Usami

    Journal of crystal growth   Vol. 649   2025.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2024.127922

    Web of Science

    Scopus

  4. Multicrystalline informatics: a methodology to advance materials science by unraveling complex phenomena Open Access

    Noritaka Usami, Kentaro Kutsukake, Takuto Kojima, Hiroaki Kudo, Tatsuya Yokoi, Yutaka Ohno

    Science and technology of advanced materials   Vol. 25 ( 1 ) page: 2396272   2024.12

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    Language:English   Publisher:Informa UK Limited  

    Multicrystalline materials play a crucial role in our society. However, their microstructure is complicated, and there is no universal approach to achieving high performance. Therefore, a methodology is necessary to answer the fundamental question of how we should design and create microstructures. ‘Multicrystalline informatics’ is an innovative approach that combines experimental, theoretical, computational, and data sciences. This approach helps us understand complex phenomena in multicrystalline materials and improve their performance. The paper covers various original research bases of multicrystalline informatics, such as the three-dimensional visualization of crystal defects in multicrystalline materials, the machine learning model for predicting crystal orientation distribution, network analysis of multicrystalline structures, computational methods using artificial neural network interatomic potentials, and so on. The integration of these research bases proves to be useful in understanding unexplained phenomena in complex multicrystalline materials. The paper also presents examples of efficient optimization of the growth process of high-quality materials with the aid of informatics, as well as prospects for extending the methodology to other materials.

    DOI: 10.1080/14686996.2024.2396272

    Open Access

    Web of Science

    Scopus

    PubMed

  5. Feature extraction and spatial imaging of synchrotron radiation X-ray diffraction patterns using unsupervised machine learning Reviewed

    Kentaro Kutsukake, Takefumi Kamioka, Kota Matsui, Ichiro Takeuchi, Takashi Segi, Takuo Sasaki, Seiji Fujikawa, Masamitu Takahasi

    Science and Technology of Advanced Materials: Methods   Vol. 4 ( 1 )   2024.12

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Informa UK Limited  

    DOI: 10.1080/27660400.2024.2336402

    Web of Science

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Books 5

  1. 多結晶マテリアルズインフォマティクス

    宇佐美 徳隆, 大野 裕 , 沓掛 健太朗, 工藤 博章, 小島 拓人, 横井 達矢( Role: Joint author)

    共立出版  2024.5  ( ISBN:9784320140035

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    Language:Japanese

    CiNii Books

  2. データ駆動型材料開発 : オントロジーとマイニング、計測と実験装置の自動制御

    ( Role: Contributor ,  無機材料プロセス開発MI, pp. 131-139)

    エヌ・ティー・エス  2021.11  ( ISBN:9784860437596

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    Total pages:3, 6, 244, 6, 図版26p   Language:Japanese

    CiNii Books

  3. マテリアルズインフォマティクスのためのデータ作成とその解析、応用事例

    ( Role: Contributor ,  結晶成長プロセスへの機械学習応用, pp. 311-316)

    技術情報協会  2021.7  ( ISBN:9784861048548

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    Total pages:500p   Language:Japanese

    CiNii Books

  4. マテリアルズ・インフォマティクスQ&A集 : 解析実務と応用事例

    ( Role: Contributor ,  第7章問13:MIによる半導体材料関連の開発例とは?, pp. 361-366, 第8章第2節問2:MIによるエレクトロニクス/半導体材料関連での研究状況とは?, pp. 479-486)

    情報機構  2020.12  ( ISBN:9784865022049

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    Total pages:xix, 597p   Language:Japanese

    CiNii Books

  5. Handbook of Solar Silicon

    ( Role: Contributor ,  Growth of crystalline silicon for solar cells: the mono-like method, pp. 1-20)

    2018 

MISC 2

  1. Opening

    Kutsukake Kentaro, Chikyow Toyohiro, Kotsugi Masato, Tomiya Shigetaka, Harada Shunta

    JSAP Annual Meetings Extended Abstracts   Vol. 2021.1   page: 227 - 227   2021.2

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    Language:Japanese   Publisher:The Japan Society of Applied Physics  

    DOI: 10.11470/jsapmeeting.2021.1.0_227

  2. Design of High-quality SiC Solution Growth Condition Assisted by Machine Learning

    Harada Shunta, Lin Hung-Yi, Tsunooka Yosuke, Zhu Can, Narumi Taka, Kutsukake Kentaro, Ujihara Toru

    Materia Japan   Vol. 59 ( 3 ) page: 145 - 152   2020

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    Language:Japanese   Publisher:The Japan Institute of Metals and Materials  

    DOI: 10.2320/materia.59.145

    CiNii Books

    CiNii Research

Presentations 431

  1. 材料プロセスシミュレーション画像の機械学習 Invited

    沓掛健太朗

    電子情報通信学会総合大会  2025.3.27 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  2. 半導体熱処理条件の最適化における既存条件を考慮した目的関数の検討

    沓掛健太朗、笠原亮太郎、原田俊太、宇治原徹、関翔太、高石将暉、永井勇太

    第72回応用物理学会春季学術講演会  2025.3.17 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  3. Materials process informatics for crystal growth Invited International conference

    Kentaro Kutsukake

    IIndInternational Conference on Emerging Nanomaterials in Chemical, Biological and Engineering Applications  2025.3.13 

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    Event date: 2025.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:India  

  4. インフォマティクスによる結晶工学シミュレーションの加速 Invited

    沓掛健太朗

    第29回結晶工学セミナー,第9回インフォマティクス応用研究会  2025.2.20 

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    Event date: 2025.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  5. 半導体結晶プロセス開発へのインフォマティクス応用 Invited

    沓掛健太朗

    プロセスインフォマティクスセミナー(4)  2025.2.19 

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    Event date: 2025.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

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KAKENHI (Grants-in-Aid for Scientific Research) 4

  1. Complex crystal growth modeling and process design in latent space

    Grant number:22H00300  2022.4 - 2025.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

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    Authorship:Coinvestigator(s) 

  2. Quantification of electrical properties of defects in semiconductor crystals from a luminescence image

    Grant number:16H03856  2016.4 - 2019.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

    Kutsukake Kentaro, Tanikawa Tomoyuki

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    Authorship:Principal investigator 

    Grant amount:\16770000 ( Direct Cost: \12900000 、 Indirect Cost:\3870000 )

    We worked in research and development of a method to quantify electrical properties of defects in semiconductor crystals from a luminescence image. High quality crystals of BaSi2 and SiC obtained in this research were used as measurement samples for the development. We obtained an accurate, high sensitivity, high speed, and high efficiency quantification method by combining computational methods such as carrier simulation, image processing and machine learning with fundamental physics of semiconductor and crystal defects. We work toward practical use of the obtained methods, techniques and knowledge.

  3. Investigation of physical properties of grain boundary in organic semiconductor-based polycrystalline thin films

    Grant number:16K04943  2016.4 - 2019.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

    SAKURAI TAKEAKI, Rand Barry

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    Authorship:Coinvestigator(s) 

    Identifying and controlling properties of grain boundaries in organic thin films is essential to reducing the energy loss of the device. In this study, we clarified the correlation between the aggregation structure (defect structure) of the molecules near the grain boundaries and their electronic properties. We demonstrated in detail what kind of grain boundary structure causes the energy loss of the devices.

  4. Study of melt growth mechanisms of multicrystalline Si by in situ observations

    Grant number:26246016  2014.6 - 2017.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

    Fujiwara Kozo

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    The fundamental melt growth mechanisms of multicrystalline Si (mc-Si) were investigated to obtain valuable information for the development of crystal growth technology of mc-Si ingots for solar cells. We newly developed an in situ observation system for the direct observation of crystal/melt interface at high temperature as 1400℃. The effect of grain boundaries on the crystal growth behaviors was clarified. On the basis fo the fundamental understanding of crystal growth mechanisms, we developed a crystal growth technology for mc-Si ingot. We obtained high quality mc-Si ingot in comparison with the conventional one.

 

Teaching Experience (On-campus) 2

  1. 物質科学特別講義

    2024

  2. 応用データサイエンス

    2024

Teaching Experience (Off-campus) 1

  1. Machine learning fundamentals and applications

    2025.1 - 2025.2 SSN Institute)

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    Level:Postgraduate  Country:India

 

Social Contribution 8

  1. 応用物理学会学術講演会シンポジウム世話人

    Role(s):Planner, Organizing member

    応用物理学会  第72回応用物理学会春季学術講演会シンポジウム「マテリアルデータベースの新展開 ー知識を蓄積・抽出・俯瞰するー」  2025.3

  2. 応用物理学会結晶工学分科会セミナー世話人

    Role(s):Presenter, Planner, Organizing member

    応用物理学会結晶工学分科会  第29回結晶工学セミナー「結晶工学におけるシミュレーション・インフォマティクスの基礎と応用」  2025.2

  3. 日本MRS年次大会シンポジウム世話人

    Role(s):Presenter, Planner, Organizing member

    日本MRS  第34回日本MRS年次大会「データ・計算駆動/AI・ロボット駆動による材料開発」  2024.12

  4. 応用物理学会結晶工学分科会講演会世話人

    Role(s):Presenter, Planner, Organizing member

    応用物理学会結晶工学分科会  第3回結晶工学講演会「 結晶工学x生成AI ~ホントに使える!?どこまで使える?生成AI〜」  2024.11

  5. 35th International Conference on Photovoltaic Science and Engineering プログラム委員

    Role(s):Planner, Organizing member

    35th International Conference on Photovoltaic Science and Engineering  35th International Conference on Photovoltaic Science and Engineering  2024.11

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