Updated on 2025/05/21

写真a

 
SUDA Jun
 
Organization
Graduate School of Engineering Electronics 2 Professor
Presidential Adviser
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering Electrical Engineering, Electronics, and Information Engineering
Title
Professor
External link

Degree 1

  1. 博士(工学) ( 1997.3   京都大学 ) 

Research Interests 14

  1. 結晶欠陥

  2. 分子線エピタキシー

  3. エピタキシャル成長

  4. 電子物性

  5. 界面

  6. 点欠陥

  7. パワーデバイス

  8. 窒化アルミニウム

  9. 窒化ガリウム

  10. Widebandgap

  11. Surface

  12. Nitride

  13. MBE

  14. Device

Research Areas 7

  1. Nanotechnology/Materials / Crystal engineering

  2. Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

  3. Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

  4. Nanotechnology/Materials / Crystal engineering

  5. Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

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Research History 5

  1. Nagoya University   Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section

    2018.4

  2. 名古屋大学大学院   工学研究科   教授

    2017.4

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    Country:Japan

  3. 京都大学大学院   工学研究科   准教授

    2008.4 - 2017.3

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    Country:Japan

  4. 京都大学大学院   工学研究科   講師

    2002.10 - 2008.3

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    Country:Japan

  5. 京都大学大学院   工学研究科   助手

    1997.4 - 2002.9

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    Country:Japan

Education 7

  1. Kyoto University   Graduate School, Division of Engineering

    1994.4 - 1997.3

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    Country: Japan

  2. Kyoto University   Graduate School, Division of Engineering

    - 1997

  3. Kyoto University

    - 1997

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    Country: Japan

  4. Kyoto University   Graduate School, Division of Engineering

    1992.4 - 1994.3

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    Country: Japan

  5. Kyoto University   Faculty of Engineering

    1988.4 - 1992.3

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    Country: Japan

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Professional Memberships 9

  1. 応用物理学会

  2. IEEE

  3. 電気学会

  4. 電子情報通信学会

  5. 日本結晶成長学会

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Papers 429

  1. Engineered interface charges and traps in GaN MOSFETs providing high channel mobility and <i>E</i>-mode operation Open Access

    Narita, T; Ito, K; Iguchi, H; Kikuta, D; Kanechika, M; Tomita, K; Iwasaki, S; Kataoka, K; Kano, E; Ikarashi, N; Horita, M; Suda, J; Kachi, T

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 63 ( 12 )   2024.12

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers  

    This review focuses on controlling interface charges and traps to obtain minimal channel resistance and stable enhancement-mode operation in GaN MOSFETs. Interface traps reduce the free electron density and act as Coulomb scattering centers, thus reducing the channel mobility. Oxide traps cause instability of threshold voltage (Vth) by trapping electrons or holes under gate bias. In addition, the Vth is affected by the overall distribution of interface charges. The first key is a design of a bilayer structure to simultaneously obtain good insulating properties and interface properties. The other key is the optimization of post-deposition annealing to minimize oxide traps and interface fixed charges. Consequently, the gate structure of an AlSiO/AlN/p-type GaN has been designed. Reductions in Vth as a result of polarization charges can be eliminated using an m-plane trench channel, resulting in a channel mobility of 150 cm2 V-1s-1 and Vth of 1.3 V.

    DOI: 10.35848/1347-4065/ad8c4f

    Open Access

    Web of Science

    Scopus

  2. A distinctive bound exciton line induced by electron-beam irradiation and subsequent annealing of an unintentionally doped GaN layer

    Iguchi, H; Kataoka, K; Horita, M; Narita, T; Yamada, S; Tomita, K; Kachi, T; Suda, J

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 63 ( 11 )   2024.11

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers  

    An undefined bound exciton line (UDX) with a photon energy 0.6 meV lower than the Si-donor bound exciton line was observed by photoluminescence in gallium nitride (GaN) layers annealed at 1100 °C after electron beam (EB) irradiation at an energy of 137-2000 keV. The UDX was not observed in samples not subjected to EB irradiation or annealing but was found in a sample annealed after EB irradiation at an energy of 137 keV, where only nitrogen atoms are displaced in GaN. The origin of the UDX was presumably formed by a thermal reaction of defects containing nitrogen-displacement-related defects.

    DOI: 10.35848/1347-4065/ad918a

    Web of Science

    Scopus

  3. Impact of Coulomb scattering due to trapped electrons on Hall mobilities in 4H-SiC (11(2)over-bar0) and (1(1)over-bar00) MOSFETs annealed in NO

    Ito, K; Horita, M; Suda, J; Kimoto, T

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 63 ( 11 )   2024.11

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers  

    The temperature dependence of Hall mobility (μ Hall) of 4H-SiC(11 2 ¯ 0) and (1 1 ¯ 00) metal-oxide-semiconductor field-effect transistors (MOSFETs) with the gate oxides annealed in NO is compared with that of MOSFETs on (0001) annealed in NO or POCl3. Coulomb scattering due to trapped electrons, which is reported to be significant in MOSFETs on (0001) annealed in NO, may be the primary limiting factor of μ Hall for MOSFETs on (11 2 ¯ 0) and (1 1 ¯ 00) annealed in NO. Furthermore, the difference in μ Hall among the MOSFETs is highlighted at 77 K, which may be attributed to the suppression of phonon scattering and the presence of strong Coulomb scattering.

    DOI: 10.35848/1347-4065/ad879d

    Web of Science

    Scopus

  4. Improvement of Gate Length Dependence in Electrical Characteristics of AlGaN/GaN Dual-Gate HEMTs

    Ando, Y; Takahashi, H; Makisako, R; Wakejima, A; Suda, J

    IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 71 ( 9 ) page: 5280 - 5288   2024.9

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IEEE Transactions on Electron Devices  

    This article examines the impact of gate length (Lg) on the dc, pulsed I-V, and small-signal characteristics of dual-gate (DG) AlGaN/GaN high electron mobility transistors (HEMTs). T-shaped DG structures with gate lengths ranging from 0.1 to 0.3μ m were fabricated using i-line stepper lithography and a thermal reflow technique. The short-channel effect was successfully eliminated in the DG devices, while single-gate (SG) devices fabricated on the same wafer were significantly affected by this phenomenon. The dependence of current collapse on Lg in the DG devices showed a reduction in the collapse by a factor of 5 or more compared to the SG devices. Furthermore, a 120-nm DG-HEMT exhibited a 10-dB reduction in the isolation and an extrapolated maximum oscillation frequency of 239 GHz, whereas a 110-nm SG-HEMT exhibited that of 146 GHz.

    DOI: 10.1109/TED.2024.3430889

    Web of Science

    Scopus

  5. Study on the Impact of Mg-Channeled Implantation on Junction Termination Extension for GaN Vertical Power Devices Using TCAD Simulation

    Kitagawa, K; Matys, M; Kachi, T; Suda, J

    IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 71 ( 9 ) page: 5239 - 5244   2024.9

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IEEE Transactions on Electron Devices  

    This study investigates the influence of different magnesium (Mg) ion implantation techniques on the performance of gallium nitride (GaN)-based junction termination extension (JTE) structures. To this end, we perform a systematic TCAD simulation study on JTE structures using two different implantation techniques of Mg ions: 1) channeled implantation and 2) random (conventional) implantation. We perform channeled and random Mg ion implantations and subsequent activation annealing to GaN epitaxial layers to obtain actual Mg depth profiles experimentally. We used the obtained profiles for the TCAD simulations. The Mg-channeled implanted JTE structure exhibits a significantly larger optimal JTE dose window compared to the Mg-random implanted JTE structure. This is because, in the JTE structure with a channeled Mg depth profile, the electric field crowding is more suppressed than in the JTE structure with a random Mg depth profile. These results indicate that deep-graded Mg depth profiles are more suitable for the relaxation of electric field strength concentrations than shallower profiles. In addition, we found that the Mg-channeling-based JTE structure was more advantageous than the Mg-random-based JTE structure that considers the interface charge at the passivation SiO2/GaN interface.

    DOI: 10.1109/TED.2024.3427103

    Web of Science

    Scopus

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Books 2

  1. Lifetime-Killing Defects in 4H-SiC Epilayers and Lifetime Control by Low-Energy Electron Irradiation

    Kimoto T., Danno K., Suda J.( Role: Sole author)

    Silicon Carbide  2011.4  ( ISBN:9783527409532

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    Language:Japanese

    DOI: 10.1002/9783527629053.ch10

    Scopus

  2. 4H-SiC MISFETs with Nitrogen-Containing Insulators

    Noborio M., Suda J., Beljakowa S., Krieger M., Kimoto T.( Role: Sole author)

    Silicon Carbide  2011.3  ( ISBN:9783527409976

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    Language:Japanese

    DOI: 10.1002/9783527629077.ch10

    Scopus

KAKENHI (Grants-in-Aid for Scientific Research) 26

  1. 炭化珪素基板上へのⅢ族窒化物の超高品質コヒーレント成長の基礎とデバイス応用

    2012.4 - 2016.3

    科学研究費補助金  基盤研究(B)

    須田 淳

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    Authorship:Principal investigator 

    SiC基板上への高Al組成窒化物半導体のコヒーレント成長の基礎を築き、デバイス応用への展開を目指して研究を行った。高Al組成AlGaNの成長として、組成や構造のデジタル的な制御が可能な、AlN/GaN短周期超格子に着目した。さまざまな構造・成長条件のAlN/GaN短周期超格子の臨界膜厚の解明、緩和メカニズムの解明を行い、GaNモル分率20%の規則混晶のコヒーレント成長に成功した。また、3BLのGaNを成長すると格子緩和がはじまることを明らかにした。極薄GaNの格子緩和はゆっくりと生じることを利用して、SiC基板上に圧縮、引っ張り歪みを持つAlNを成長する方法も提案した。

  2. 炭化珪素半導体の欠陥制御と超高耐圧ロバスト素子への応用

    2009.4 - 2014.3

    科学研究費補助金  基盤研究(S)

    木本 恒暢

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    電力系統や高圧電源に用いられる高効率電力変換用パワーデバイスの実現を目指し、炭化珪素(SiC)半導体に関する材料科学と超高耐圧デバイスの基礎研究を遂行した。主な成果として、高純度結晶の作製、拡張欠陥の構造および物性の解明、拡張欠陥の非破壊高速検出、深い準位の物性解明、キャリア寿命キラー欠陥の大幅な低減とキャリア寿命の増大、キャリア寿命制御、超高耐圧を可能とする接合終端構造および設計指針の提示、絶縁破壊機構に関する考察、固体素子として最高の超高耐圧(20kV以上) SiC PiNダイオードおよびバイポーラトランジスタの作製、特性解析と高温動作(300℃)の実証を達成した。

  3. 超高耐圧ロバスト素子を目指した炭化珪素半導体の欠陥制御に関する研究

    2009.4 - 2010.3

    科学研究費補助金  基盤研究(A)

    木本 恒暢

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    Authorship:Coinvestigator(s) 

  4. 新しい結晶構造を持つ窒化アルミニウムの物性制御と深紫外発光デバイスへの展開

    2008.4 - 2011.3

    科学研究費補助金  基盤研究(B)

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    Authorship:Principal investigator 

  5. イオン注入および埋め込み再成長を利用したSiC超接合パワーMOSFETの研究

    2006.4 - 2009.3

    科学研究費補助金  基盤研究(A)

    木本 恒暢

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    Authorship:Coinvestigator(s) 

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Teaching Experience (On-campus) 10

  1. 線形代数学I

    2018

  2. 固体電子工学及び演習

    2018

  3. パワーデバイス工学特論

    2018

  4. 固体電子工学及び演習

    2021

  5. 量子理論

    2021

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