Language：English   Publishing type：Research paper (scientific journal)   Publisher：Journal of Applied Crystallography  

This study reports the synthesis and crystal structure determination of a novel CrTe3 phase using various experimental and theoretical methods. The average stoichiometry and local phase separation of this quenched high-pressure phase were characterized by ex situ synchrotron powder X-ray diffraction and total scattering. Several structural models were obtained using simulated annealing, but all suffered from an imperfect Rietveld refinement, especially at higher diffraction angles. Finally, a novel stoichiometrically correct crystal structure model was proposed on the basis of electron diffraction data and refined against powder diffraction data using the Rietveld method. Scanning electron microscopy-energy-dispersive X-ray spectrometry (EDX) measurements verified the targeted 1:3 (Cr:Te) average stoichiometry for the starting compound and for the quenched high-pressure phase within experimental errors. Scanning transmission electron microscopy (STEM)-EDX was used to examine minute variations of the Cr-to-Te ratio at the nanoscale. Precession electron diffraction (PED) experiments were applied for the nanoscale structure analysis of the quenched high-pressure phase. The proposed monoclinic model from PED experiments provided an improved fit to the X-ray patterns, especially after introducing atomic anisotropic displacement parameters and partial occupancy of Cr atoms. Atomic resolution STEM and simulations were conducted to identify variations in the Cr-atom site-occupancy factor. No significant variations were observed experimentally for several zone axes. The magnetic properties of the novel CrTe3 phase were investigated through temperature- and field-dependent magnetization measurements. In order to understand these properties, auxiliary theoretical investigations have been performed by first-principles electronic structure calculations and Monte Carlo simulations. The obtained results allow the observed magnetization behavior to be interpreted as the consequence of competition between the applied magnetic field and the Cr-Cr exchange interactions, leading to a decrease of the magnetization towards T = 0K typical for antiferromagnetic systems, as well as a field-induced enhanced magnetization around the critical temperature due to the high magnetic susceptibility in this region.

DOI： 10.1107/S1600576724002711

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Chemistry of Materials  

Stereochemically active lone pair electrons (LPEs) associated with p-block cations, such as Pb2+ and Bi3+, possess the capability of causing a reduction in the symmetry of crystal structures. However, LPEs leading to steric hindrance may impede structural stabilization; compounds with Bi3+, akin to those containing La3+ with comparable ionic radii, are not always encountered. In this study, we synthesized BiSF using high-pressure (5 GPa) synthesis. BiSF crystallizes in a PbFCl-type structure, exhibiting orthorhombic distortion due to stereochemically active LPEs oriented along the b axis. This contrasts sharply with other PbFCl-type tetragonal compounds (e.g., BiOF), which have van der Waals gaps formed by interlayer LPEs. First-principles calculations and in situ XRD indicate that BiSF is of ideal tetragonal symmetry under high pressure, featuring inactive LPEs. Upon depressurization, a notable expansion of the soft S2- anions occurs, enhancing hybridization between the Bi-6s/6p and S-3s/3p orbitals. This activation of the stereochemistry of LPEs results in a symmetry reduction. BiSF exhibits anisotropic thermal expansion, which is attributed to the contraction of the “LPE-mediated” Bi-F bonds. Our findings illustrate that the direction and shape of LPEs can be tailored during the postsynthesis decompression, underlining high-pressure synthesis as an effective approach for obtaining compounds with stereochemically active LPEs at ambient pressure.

DOI： 10.1021/acs.chemmater.4c00114

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Language：Japanese   Publishing type：Research paper (scientific journal)  

Language：English   Publishing type：Research paper (scientific journal)   Publisher：Ceramics International  

A black phosphorus layered homogeneous phosphorus-rich compound – (V0.5Cr0.5)P4 is synthesized using a large volume press under conditions of P = 5 GPa, 1100 °C, and 1 h of heating. (V0.5Cr0.5)P4 has a monoclinic (C2/c) structure with lattice parameters and cell volume of a = 5.2307(3)Å, b = 10.861(4)Å, c = 5.8253(4)Å, β = 110.784°, and V = 309.41(4)Å3, respectively. The thermal expansion behavior above about 110K has been investigated by low-temperature synchrotron XRD. The coefficient of thermal expansion, α, was calculated to be αa = 0.57 × 10−5K−1, αb = 0.70 × 10−5K−1, αc = 0.92 × 10−5K−1, αβ = 0.13 × 10−5K−1 and αv = 2.10 × 10−5K−1 at 293K. This thermal expansion behavior presents an anisotropic expansion characteristic different from pure black phosphorus due to the V/Cr atom that bonded the black phosphorus layers together.

DOI： 10.1016/j.ceramint.2023.09.176

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Authorship：Corresponding author   Language：English   Publishing type：Research paper (scientific journal)   Publisher：Progress in Solid State Chemistry  

CuAl2-type VN2, which is synthesized under high pressure, is a recoverable material at ambient conditions and has a high bulk modulus. In this study, we investigated the thermal expansion behavior of CuAl2-type VN2 by low-temperature X-ray diffraction measurements between 109.3(5) K and 298.3(8) K. The axial thermal expansion coefficient of VN2 was determined to be αa = 2.7(9) × 10−6 K−1 and αc = 17.8(12) × 10−6 K−1 at 298.3(8) K, which has large anisotropy similar to that of compression behavior. It is found that the small coefficient of thermal expansion of the a-axis is due to the negative and positive effects on the a-axis length with increasing temperature of the bond angles and bond lengths of VN2, respectively. As a result, VN2 exhibits very large anisotropic thermal expansion behavior.

DOI： 10.1016/j.progsolidstchem.2023.100426

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Authorship：Corresponding author   Language：English   Publishing type：Research paper (scientific journal)   Publisher：Inorganic Chemistry  

A novel high-pressure phase of manganese mononitride, NiAs-type MnN, was successfully synthesized through a pressure-induced phase transition from a tetragonal distorted NaCl-type MnN at pressures above approximately 55 GPa. High-pressure experiments, including starting material preparation, were conducted using a laser-heated diamond anvil cell. This result is the first example of a nitride with a structural phase transition from the distorted NaCl-type to the NiAs-type structure. Upon decompression after the phase transition to NiAs-type structure, the NiAs-type MnN underwent a structural change to the distorted NaCl-type phase, indicating the phase transition was reversible. NiAs-type MnN has a higher density and bulk modulus in comparison to the distorted NaCl-type one. The phase transition pressure of MnN is lower than that of oxides, such as FeO and MnO, which show a structural phase transition from a NaCl-type to a NiAs-type structure. It is suggested that this is due to the lattice distortion caused by antiferromagnetic ordering.

DOI： 10.1021/acs.inorgchem.3c03241

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Authorship：Lead author,　Corresponding author   Language：Japanese   Publishing type：Research paper (scientific journal)   Publisher：日本結晶学会  

DOI： 10.5940/jcrsj.65.s31

CiNii Research

Language：English   Publishing type：Research paper (scientific journal)   Publisher：The Ceramic Society of Japan  

<p>Ga- and Gd-substituted garnet-type Y₃Al₅O₁₂:Mn⁴⁺ phosphors, Y₃(Al₁₋<i>_x</i>Ga<i>_x</i>)₅O₁₂:Mn⁴⁺ and (Y₁₋<i>_y</i>Gd<i>_y</i>)₃Al₅O₁₂:Mn⁴⁺, were synthesized by a conventional solid-state reaction to elucidate the relationship between the emission and the local structure of the activator in the host material. Completely substituted Y₃(Al₁₋<i>_x</i>Ga<i>_x</i>)₅O₁₂ and ∼80 % substituted (Y₁₋<i>_y</i>Gd<i>_y</i>)₃Al₅O₁₂ (<i>y</i> ≤ ∼0.8) solid solutions have been produced. The lattice parameters of the garnet-type solid solutions increased linearly with the substitution of Ga and Gd for Al and Y sites, respectively. The emission peak attributed to the Mn⁴⁺ luminescence center of their garnet-type solid solutions shifted toward a longer wavelength side by substituting Ga and Gd. The emission peak wavelength of the Mn⁴⁺-activated garnet-type solid solutions increased almost linearly with increasing the average bond length between the cation and anion in the dodecahedral sites. The dodecahedral site in the garnet structure is edge-sharing with the octahedral site where Mn⁴⁺ exists. These results indicate that the emission wavelength can be controlled by changing the local structure around Mn⁴⁺ due to the cation substitution of coordination polyhedra neighboring Mn⁴⁺ coordination polyhedra.</p>

DOI： 10.2109/jcersj2.23063

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Materials Letters  

The coefficient of thermal expansion (CTE) of entropy-stabilized oxide (MgCoNiCuZn)O has been firstly experimentally measured and studied at low temperatures below room temperature. The temperature-dependent lattice parameters of (MgCoNiCuZn)O were determined by synchrotron X-ray diffractometry. A CTE value of α = 2.2780x10-5 K−1 at 113 K for (MgCoNiCuZn)O was calculated using a second-degree polynomial fitting. The quenched homogeneous NaCl-type (MgCoNiCuZn)O structure has the highest CTE value below 133 K among all its constituent oxides. An unquenched (MgCoNiCuZn)O was also investigated, and the homogeneity was found to affect CTE values. Finally, the anisotropic behavior of the constituent oxides and (MgCoNiCuZn)O were also compared.

DOI： 10.1016/j.matlet.2023.134601

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Language：Japanese   Publishing type：Research paper (scientific journal)   Publisher：The Japan Society of Calorimetry and Thermal Analysis  

Pressure is one of the thermodynamic parameters together with the temperature to control the stability of materials. Ultra-high pressure in more than GPa regions allows us to obtain novel transition metal nitrides. This review shows a synthesis system under ultra-high pressures and high temperatures called laser-heating diamond anvil cell system in the first part. Then, our recent research results of the first synthesis of a novel niobium nitride, U₂S₃-type Nb₂N₃ are described. In the second part, compression and thermal expansion behaviors of the U₂S₃-type Nb₂N₃ are shown and compared with each other. Besides, the high pressure in-situ XRD and low temperature in-situ XRD measurement systems in the Aichi Synchrotron Radiation Center (Aichi SR) are also described briefly.

DOI： 10.11311/jscta.50.1_13

CiNii Research

Language：English   Publishing type：Research paper (scientific journal)   Publisher：Dalton Transactions  

A novel high-pressure molybdenum nitride phase, Mo3N5, was synthesized at above 45 GPa via a nitridation reaction of molybdenum with nitrogen under high pressure using a laser-heated diamond anvil cell. Mo3N5, having an N-N dimer and 7-coordinated Mo sites, crystallizes in an orthorhombic structure with a space group of Cmcm (No. 63) without other prototype structures. The refined lattice parameters for Mo3N5 were a = 2.86201(2) Å, b = 7.07401(6) Å, and c = 14.59687(13) Å. The DFT enthalpy calculation suggested that Mo3N5 is a high-pressure stable phase, which is also consistent with an increasing coordination number compared to ambient- and low-pressure phases. The zero-pressure bulk modulus of Mo3N5 was determined to be K0 = 328(4) GPa with K′0 = 10.1(6) by the fitting for the compression curve, which is almost consistent with the theoretical E-V curve and elastic stiffness constants. The compressibility of Mo3N5 has axial anisotropy corresponding to the N-N dimer direction in the crystal structure.

DOI： 10.1039/d2dt03433f

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Language：Japanese   Publishing type：Research paper (scientific journal)   Publisher：The Japan Society of High Pressure Science and Technology  

<p>Pernitrides and polynitrides synthesized under high pressure, containing nitrogen dimers and molecular nitrogen, respectively, are a group of compounds quite different from conventional nitrides synthesized under ambient pressure. Transition-metal polynitrides composed of transition-metal and molecular nitrogen have been synthesized above about 100 GPa, and various types of molecular nitrogen have been discovered. Pernitrides containing nitrogen dimers have anisotropic axial compressibility in the bonding direction of the dimers due to the low compressibility of the dimers. In this article, we review recent progress in molecular nitrogen-containing metal compounds and the anisotropic compression behavior of a novel molybdenum–nitrogen compound, Mo₃N₅, containing nitrogen dimers.</p>

DOI： 10.4131/jshpreview.33.254

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Authorship：Lead author,　Corresponding author   Language：Japanese   Publishing type：Research paper (scientific journal)   Publisher：The Japan Society of High Pressure Science and Technology  

<p>The recent development of high-pressure experimental techniques combined with advanced characterization and analytical methods allows us to reveal the crystal chemistry of the transition metal-nitrogen binary compounds up to the megabar pressure regime. Novel early transition metal-nitrogen compounds, VN₂, Nb₂N₃, and MoC-type WN_0.6, have been synthesized by using a laser-heated diamond-anvil cell or DIA-type high-pressure apparatus. In addition to conventional high-pressure <i>in-situ</i> X-ray diffraction measurements, the low-temperature thermal expansion behavior and the valance state of transition metal ions of these newly synthesized compounds were revealed. In this article, the details of our experiments, and recent progress in high-pressure synthesis and crystal chemistry of transition metal nitrogen binary compounds are reviewed.</p>

DOI： 10.4131/jshpreview.33.26

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CiNii Research

Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)   Publisher：AIP Publishing  

A polycrystalline platinum pernitride (PtN₂) thin-film was successfully synthesized via nitridation of a platinum thin-film deposited on α-Al₂O₃ substrate at the pressure of ∼50 GPa by using the laser-heated diamond anvil cell. The current–voltage characteristic and optical reflectance of the synthesized PtN₂ thin-film were measured under ambient conditions. Combined with first-principles calculations, these experimental results have revealed that PtN₂ exhibits semiconducting property with a bandgap of ∼2 eV. This high-pressure thin-film synthesis technique could also be applied for revealing the physical properties of other novel pernitrides synthesized under ultra-high pressure, which can offer new insights into the physical properties and functionality of the pernitrides and related nitrides.

DOI： 10.1063/5.0090089

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Language：Japanese   Publishing type：Research paper (scientific journal)   Publisher：Journal of the Physical Society of Japan  

The electronic structure of the marcasite-type NiN2, newly synthesized under high pressures and high temperatures, was investigated using synchrotron-radiation infrared (IR) microspectroscopy and first-principles calculations based on the density functional theory (DFT). The IR spectrum of the marcasite-type NiN2 showed characteristic low reflectance of the semiconductor with spectral features probably due to defects or lattice vibrations and free carriers. The effective free-carrier concentration in the marcasite-type NiN2 was estimated by fitting a Drude-Lorentz model for the optical response to be 1024-25 m-3, much less than those of normal metals (1028-29 m-3) and comparable to the estimated concentration of the thermally-excited carrier in the conduction band. The DFT predictions could semi-quantitatively explain the experimental findings; at 36 GPa, the marcasite-type NiN2 had a narrow gap between the Ni 3d aσ bands split in the distorted octahedral coordination of N neighbors.

DOI： 10.7566/JPSJ.91.044702

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Dalton Transactions  

A novel transition metal pernitride, CuAl2-type VN2, has been synthesized at a pressure above 73.3 GPa. The bulk modulus has been determined to be K0 = 347(12) GPa. By hard X-ray absorption spectrum measurements of VN2, the valence state of transition metal ions in pernitrides has been for the first time experimentally reported.

DOI： 10.1039/d1dt04310b

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Language：Japanese   Publishing type：Research paper (scientific journal)   Publisher：The Japanese Association for Crystal Growth  

<p>  Pressure is one of the thermodynamic parameters together with the temperature to control the stability of materials. Ultra-high pressure in GPa ~ Mbar regions allows us to obtain novel materials and crystals. This review shows two crystal growth systems under ultra-high pressure and high temperature are shown in the first part, i.e. multi-anvil large press and laser-heating diamond anvil cell systems. In the second parts, our recent research results of crystal growth by solution growth techniques using these two systems are described including novel incompressible crystals, high aspect-ratio nanowires and rectangular hollow crystals of metal nitrides and oxides.</p>

DOI： 10.19009/jjacg.49-2-02

CiNii Research

Language：English   Publishing type：Research paper (scientific journal)   Publisher：Inorganic Chemistry  

A Nowotny chimney-ladder (NCL) chromium germanide (CrGeγ) with varying compositions has been synthesized under high pressure. Crystal structure parameters of the NCL CrGeγ have been calculated by Le Bail refinement based on the superspace group. The refined γof CrGeγ increases with the synthesis pressure, indicating an increasing Ge content. The NCL CrGeγ phases are ferromagnetic at T = 2 K regardless of their composition, and the magnetic transition temperature (TC) increases when the γbecomes higher. It is noteworthy that CrGe1.763 and CrGe1.774 synthesized at P = 10 and 14 GPa have magnetic transition temperatures of T = 295 and 333 K above room temperature, respectively. Surprisingly, the magnetic transition temperature has changed by δTC = 270 K, although the γvalues of the raw material and the sample synthesized at P = 14 GPa differ by only δγ= 0.05, corresponding to an atomic concentration of 0.62 atom %. The synthesis pressure acts as an essential parameter in tuning the composition of the NCL phase. Accordingly, the high-pressure synthesis may significantly control several physical characteristics of NCL phases by utilizing compositional and structural modulation.

DOI： 10.1021/acs.inorgchem.1c01887

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Inorganic Chemistry  

Tungsten nitride continues to drive fundamental interests because of its potential as a functional compound, which combines features such as high hardness together with thermal, chemical, and wear resistance. Here, we report a novel tungsten nitride phase synthesized from MoC-type WN0.6 and molecular nitrogen after laser irradiation at P = 70 GPa in a diamond anvil cell. This novel phase is quenchable at ambient pressure and determined to be U7Te12-type tungsten nitride and crystallizes in the hexagonal space group (P6) having lattice parameters of a = 8.2398(3) Å, c = 2.94948(14) Å, and V = 173.423(13) Å3. Tungsten atoms are coordinated to eight and nine nitrogen atoms, higher than previously reported tungsten nitrides. The bulk modulus is determined to be K0 = 312 (5) GPa (K0′ = 4.0 fixed), and DFT calculations predict that U7Te12-type W7N12 has a metallic nature.

DOI： 10.1021/acs.inorgchem.1c01633

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Journal of Raman Spectroscopy  

The phase stability of γ-P3N5 and the possible formation of new phosphorus nitrides were investigated via high-pressure in situ Raman spectroscopy, X-ray diffraction measurements, and first-principles calculations up to approximately 80 GPa. In this study, γ-P3N5 was synthesized via the direct nitridation of black phosphorus at a pressure approximately above 12 GPa. The Raman spectrum, bulk modulus (K0 = 130.27(43) GPa), and compression behaviors (order of axial compressibility: βc > βa > βb) were experimentally measured for the first time. These experimental results were in good agreement with those of first-principles calculations. Our high-pressure in situ measurements and first-principles calculations revealed that γ-P3N5 persisted up to 80 GPa at room temperature. The compression of γ-P3N5 proceeded with the folding of the layer consisting of the corner- and edge-sharing PN4 and PN5. The present findings indicate that the P–N bonding with a low coordination number (PN4 and PN5) is preferable and stabilized for phosphorus nitride over a wide pressure range. However, laser heating between 67 and 70 GPa in the presence of nitrogen resulted in the formation of new PxNy, which included the possibility of a new high-pressure P3N5 phase. The Raman scattering measurements along with the decompression demonstrated that the local structure of the newly synthesized PxNy metastably persisted at atmospheric pressure. The present experimental and theoretical studies on phosphorus nitrides offer new insights into the high-pressure behaviors of covalent compounds consisting of highly coordinated polyhedra.

DOI： 10.1002/jrs.6079

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Physical Society of Japan  

Language：English   Publishing type：Research paper (scientific journal)   Publisher：Physical Society of Japan  

Language：English   Publishing type：Research paper (scientific journal)  

DOI： 10.1063/5.0044648

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：American Chemical Society (ACS)  

DOI： 10.1021/acs.inorgchem.0c03240

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Language：English   Publishing type：Research paper (scientific journal)  

Material properties, such as elasticity data at wide-ranging conditions of pressure and temperature, attract increasing attention for material and earth sciences. In particular, polycrystalline ceramics for next-generation photonic applications are nowadays fabricated by advanced syntheses techniques operating under elevated pressures and temperatures. Herein, the elastic properties of a synthetic transparent and reinforced aluminosilicate nanoceramic composed of triclinic kyanite with minor amounts of trigonal α-alumina crystals are investigated using in situ synchrotron X-ray diffraction and ultrasonic techniques at high-pressure (up to 11 GPa) and high-temperature (300-1500 K) conditions. This not only enables the determination of the equation of state (EoS) parameters by applying the pressure-volume-temperature (P-V-T) data to the high-temperature Birch-Murnaghan EoS but also yields the elastic moduli together with their P and T derivatives from the fit of the compressional and shear wave velocities to a finite strain EoS: KS0,300 = 186(2) GPa, K′S0,300 = 7.2(6), (∂KS0,300/∂T)P = −0.023(2) GPa K−1, G0,300 = 125(1) GPa G′0,300 = 2.3(2), (∂G0,300/∂T)P = −0.017(1) GPa K−1. On the basis of our acquired results, we propose to predict the elastic moduli of aluminosilicate ceramics by a linear function of the ratio of AlO6 octahedra and SiO4 tetrahedra within the constituting phases.

DOI： 10.1111/jace.17464

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：American Chemical Society (ACS)  

DOI： 10.1021/acs.inorgchem.0c01057

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Language：Japanese   Publishing type：Research paper (scientific journal)  

DOI： 10.1039/d0ce00210k

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Language：English   Publishing type：Research paper (scientific journal)  

DOI： 10.1380/ejssnt.2020.152

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DOI： 10.1063/1.5140856

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Language：English   Publishing type：Research paper (scientific journal)  

DOI： 10.1002/ces2.10036

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CiNii Research

Language：Japanese   Publishing type：Research paper (scientific journal)   Publisher：The Japan Society of Applied Physics  

<p>It was assumed that platinum-group-metals neither react with nitrogen nor form their nitrides at ambient pressure.However, ultra-high-pressure conditions of more than several dozen GPa have recently made it possible to synthesize their dinitrides by a direct nitridation. This short communication reports on new worldwide trends f of novel metal(M) nitride studies, such as MN₂, M₂N₃, M₃N₄, particularly platinum-group-metal dinitrides, which can be synthesized only under ultra-high-pressures. The first section deals with an ultra-high-pressure synthesis technique using a diamond anvil cell combined with an infra-red-laser heating system. The next section describes their synthesis, phase stability, crystal structure, and physical properties. Other novel transition-metal dinitrides are also introduced briefly, particularly focusing on the growth of CrN₂ single crystals, which exhibit the first and only success among novel metal dinitrides.</p>

DOI： 10.11470/oubutsu.89.2_87

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：American Chemical Society (ACS)  

DOI： 10.1021/acs.inorgchem.9b01945

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Language：Japanese   Publishing type：Research paper (scientific journal)  

DOI： 10.1021/acs.jpcc.9b06639

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CiNii Research

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DOI： 10.1002/ejic.201900489

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CiNii Research

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© 2019 Elsevier Inc. Lithium ionic conductivities of two LiBO 2 polymorphs, i.e. the same composition Li borates: α-LiBO 2 and γ-LiBO 2 , which are ambient and high-pressure phases, have been measured by the AC impedance method between 450 and 520 K using their high-density polycrystalline samples synthesized under high pressures. It is found the intra-grain and total conductivities of the γ-LiBO 2 have been measured for the first time and be of the order 10 −5 ∼ 10 −6 Scm −1 and 10 −6 Scm −1 , respectively, both of which are higher in whole measured temperature range than those of the α-LiBO 2 . The higher lithium ionic conductivities of the former are discussed from the viewpoints of local structure and Li ion network in the crystal structures of the α-LiBO 2 and γ-LiBO 2 .

DOI： 10.1016/j.jssc.2019.02.045

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Language：Japanese   Publishing type：Research paper (scientific journal)  

DOI： 10.1103/PhysRevMaterials.3.053601

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：ELSEVIER SCIENCE BV  

The electronic structures of platinum-group metal pernitrides MN2 (M = Ru, Rh, Ir, and N) were investigated via synchrotron radiation infrared spectroscopy and first-principles calculations. Measured reflectance spectra of marcasite-type RuN2 and RhN(2 )showed Drude-like responses, approaching 1 as the photon energy was decreased, whereas reflectance of arsenopyrite-type IrN2 and pyrite-type PtN2 became similar to 0.3 in the low photon energy region with a few features. These findings agreed well with the predictions of the metallic nature of marcasite-type RuN2 and RhN2 and the semiconducting properties of arsenopyrite-type IrN2 and pyrite-type PtN2 , respectively. The measured reflectance spectra were also reasonably consistent with the calculated optical responses. The band gaps of IrN2 and PtN2 were estimated to be 0.8 and 2.1 eV, respectively, via first-principles calculation with a modified Becke-Johnson (MBJ) potential for the exchange potential.

DOI： 10.1016/j.physb.2019.01.017

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© 2018 American Chemical Society. A new structural polymorph of Li 3 BP 2 O 8 has been successfully synthesized via a solid-state reaction between Li 3 PO 4 and BPO 4 at 4 GPa and 600 °C. The high-pressure phase of Li 3 BP 2 O 8 (HP-Li 3 BP 2 O 8 ) was found to crystallize in monoclinic symmetry with the cell parameters of a = 8.57010(4) Å, b = 11.11812(5) Å, c = 5.55380(3) Å, and β = 97.7269(3)° [space group P2 1 /a (No. 14)]. HP-Li 3 BP 2 O 8 has a new crystal structure that has not been reported so far. The total ionic conductivities measured for the polycrystalline sample by alternating-currrent impedance were 3.4 × 10 -7 and 2.1 × 10 -6 S/cm at 399 and 456 K, respectively. The lithium ionic conductivity of HP-Li 3 BP 2 O 8 was higher than that of the low-pressure phase Li 3 BP 2 O 8 in the temperature range of 375-456 K. This is caused by the difference in the dimensions of the lithium arrangements between LP- and HP-Li 3 BP 2 O 8 .

DOI： 10.1021/acs.inorgchem.8b03155

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Language：English   Publishing type：Research paper (scientific journal)  

© 2018 Elsevier Ltd The high-pressure behavior of Li7La3Zr2O12 (LLZO) with a garnet-related structure has been investigated for the first time by high pressure in situ X-ray diffraction measurements and Raman spectroscopy using a diamond anvil cell. It was found that the tetragonal LLZO transforms to the high-pressure cubic phase (HP-c-LLZO) at 71.8 GPa in a N2 medium and at 25.8 GPa in the absence of pressure mediums. Uniaxial compression in the absence of pressure mediums induced the phase transition at much lower pressures than in the hydrostatic case when N2 was used as the pressure medium. High pressure in situ Raman spectroscopy suggested that the Li coordination in HP-c-LLZO was different from that reported in cubic LLZO, which had been stabilized by doping Al at ambient pressure and room temperature.

DOI： 10.1016/j.materresbull.2018.07.034

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：Physical Society of Japan  

The valence-band electronic structures of high-pressure-phase PdF2-type (HP-PdF2-type) platinum-group metal dioxides MO2 (M = Ru, Rh, Ir, and Pt) were studied by synchrotron radiation photoelectron spectroscopy and first-principles calculations. The obtained photoelectron spectra for HP-PdF2-type RuO2, RhO2, and IrO2 agree well with the calculated valence-band densities of states (DOSs) for these compounds, indicating their metallic properties, whereas the DOS of HP-PdF2-type PtO2 (calculated in the presence and absence of spin–orbit interactions) predicts that this material may be metallic or semimetallic, which is inconsistent with the electric conductivity reported to date and the charging effect observed in current photoelectron measurements. Compared with the calculated results, the valence-band spectrum of PtO2 appears to have shifted toward the high-binding-energy side and reveals a gradual intensity decrease toward the Fermi energy EF, implying a semiconductor-like electronic structure. Spin-dependent calculations predict a ferromagnetic ground state with a magnetization of 0.475 μB per formula unit for HP-PdF2-type RhO2

DOI： 10.7566/JPSJ.87.044701

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Language：English   Publishing type：Research paper (scientific journal)   Publisher：ELSEVIER SCI LTD  

A novel Cr3C2-Ni cermets were successfully in-situ synthesized with Cr, C and Ni (20 wt%) mixed-powder at 1100 degrees C under 0-6 GPa isostatic pressure using a small-sized cubic-type multi-anvil press apparatus. High purity Cr3C2 phase was generated in the cermets. Comparing with the conventional and reactive sintering, the sintering temperature and the average grain size of Cr3C2 decreased by 200 degrees C and 50%, respectively. The physical properties, normalized lattice parameters and volumes of Cr3C2 20 wt%Ni cermet as a function of pressure had been studied both experimentally and by first-principles calculations for the first time.

DOI： 10.1016/j.ceramint.2017.09.145

Web of Science

Scopus

Language：English   Publishing type：Research paper (scientific journal)   Publisher：ROYAL SOC CHEMISTRY  

The chemical reaction of group-14 elements with molecular nitrogen at pressures above 60 GPa successfully leads to the formation of pyrite-type pernitrides. These new crystalline group-14 elemental pernitrides were found to show a bulk modulus higher than the other known group-14 elemental nitrides. Our results offer significant new progress in the solid-state chemistry of nitrides.

DOI： 10.1039/c7dt01583f

Web of Science

Scopus

PubMed

Language：English   Publishing type：Research paper (scientific journal)   Publisher：PHYSICAL SOC JAPAN  

Using microbeam hard X-ray photoelectron spectroscopy, we clarified the valence-band electronic structures and chemical states of platinum-group metal (Ru, Ir, and Pt) pernitrides, which have been synthesized in supercritical nitrogen fluid under extremely high pressures and temperatures. Their nitrogen contents relative to the platinum-group metal are estimated to be 2 from the photoemission intensity, which is consistent with the studies reported to date. The observed valence-band structures agree quite well with theoretically predicted structures for the pyrite-type PtN2, arsenopyrite-type IrN2, and marcasite-type RuN2. The origin of their extremely large bulk moduli is discussed based on the current results of the valence-band structures and core-level chemical shifts.

DOI： 10.7566/JPSJ.86.064804

Web of Science

Scopus

CiNii Research

Language：English   Publishing type：Research paper (scientific journal)   Publisher：AMER CHEMICAL SOC  

Highly coordinated iron and cobalt nitrides were successfully synthesized via direct chemical reaction between a transition metal and molecular nitrogen at pressures above approximately 30 GPa using a laser-heated diamond anvil cell. The synthesized novel transition metal nitrides were found to crystallize into the NiAs-type or marcasite-type structure. NiAs-type FeN could be quenched at ambient pressure, although it was gradually converted to the ZnS-type structure after the pressure was released. On the other hand, CoN was recovered with ZnS-type structure through a phase transition from NiAs-type structure at approximately a few gigapascals during decompression. Marcasite-type CoN2 was also synthesized at pressures above approximately 30 GPa. High-pressure in situ X-ray diffraction measurement showed that the zero-pressure bulk modulus of marcasite-type CoN2 is 216(18) GPa, which is comparable to that of RhN2. This indicates that the interatomic distance of the N-N dimer in marcasite-type CoN2 is short because of weak orbital interaction between cobalt and nitrogen atoms, as in RhN2. Surprisingly, a first-principles electronic band calculation suggests that the NiAs-type FeN and CoN and marcasite-type CoN2 exhibit metallic characteristics with magnetic moments of 3.4, 0.6, and 1.2 mu(B), respectively. The ferromagnetic NiAs-type structure originates from the anisotropic arrangement of transition atoms stacked along the: c axis.

DOI： 10.1021/acs.inorgchem.7b00516

Web of Science

Scopus

PubMed

CiNii Research

Language：English   Publishing type：Research paper (scientific journal)   Publisher：ROYAL SOC CHEMISTRY  

The van der Waals compound Xe(N-2)(2) with a C15 Laves structure was successfully synthesised at pressures greater than 4.4 GPa. We found that, at 10 GPa, the structure reversibly transforms from a cubic to a tetragonal phase. Further compression results in changes of Xe-N compound, which could result in the enhancement of orbital interactions between the xenon and nitrogen atoms.

DOI： 10.1039/c6cp06552j

Web of Science

PubMed

Language：English   Publishing type：Research paper (scientific journal)   Publisher：WILEY-V C H VERLAG GMBH  

A-site columnar-ordered double perovskites, LnMn(Ga0.5Ti0.5)(2)O-6 (Ln = Sm, Gd), were successfully synthesized under high pressure and high temperature (6 GPa, 1375 K). From the synchrotron powder X-ray diffraction patterns, all of the diffraction peaks can be indexed by the P4(2)/nmc space group with lattice parameters a, c approximate to 2a(p) (a(p): primitive cubic perovskite lattice) and no ordering of the B-site cations. Rietveld analysis of the synchrotron powder X-ray diffraction patterns and Curie-Weiss fitting of their magnetizations reveal that the ionic formulae of these perovskites are Ln(3+) Mn2+(Ga0.53+Ti0.54+)(2)O-6(2-). SmMn(Ga0.5Ti0.5)(2)O-6 shows canted-antiferromagnetic behavior, whereas GdMn(Ga0.5Ti0.5)(2)O-6 exhibits two different magnetic states at low temperature depending on the applied magnetic field and shows an unusual magnetization curve. These magnetic behaviors originate by decreasing the antiferromagnetic interaction by substituting Ga3+(d(10)) for Ti4+(d(0)) and by decreasing the ferromagnetic interaction between columnar-ordered Ln(3+) and Mn2+.

DOI： 10.1002/ejic.201601392

Web of Science

Scopus

CiNii Research

Language：English   Publishing type：Research paper (scientific journal)  

Authorship：Lead author   Language：English   Publishing type：Research paper (scientific journal)  

Language：English   Publishing type：Research paper (scientific journal)  

DOI： doi.org/10.1016/j.ssc.2016.03.004

Language：English   Publishing type：Research paper (scientific journal)  

DOI： 10.2109/jcersj2.16123

Language：English   Publishing type：Research paper (scientific journal)  

Language：English   Publishing type：Research paper (scientific journal)  

Authorship：Lead author   Language：English   Publishing type：Research paper (international conference proceedings)  

Authorship：Lead author   Language：English   Publishing type：Research paper (scientific journal)  

Authorship：Lead author   Language：English   Publishing type：Research paper (scientific journal)  

Authorship：Lead author   Language：Japanese  

Language：English   Publishing type：Research paper (scientific journal)  

Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)  

Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)  

Language：English   Publishing type：Research paper (bulletin of university, research institution)  

Language：English   Publishing type：Research paper (scientific journal)  

Language：English   Publishing type：Research paper (scientific journal)  

Language：English   Publishing type：Research paper (scientific journal)  

Authorship：Lead author   Language：English   Publishing type：Research paper (scientific journal)  

Authorship：Lead author   Language：English   Publishing type：Research paper (scientific journal)  

Language：Japanese  

Language：Japanese  

Language：English   Publishing type：Research paper (scientific journal)  

Authorship：Lead author   Language：English   Publishing type：Research paper (scientific journal)  

Language：English   Publishing type：Research paper (international conference proceedings)  

Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)  

Language：English   Publishing type：Research paper (scientific journal)  

Language：English   Publishing type：Research paper (scientific journal)  

Language：English   Publishing type：Research paper (scientific journal)  

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Language：Japanese   Publishing type：Research paper (scientific journal)  

Language：Japanese   Publishing type：Research paper (scientific journal)  

DOI： 10.4131/JSHPREVIEW.18.244

Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)  

DOI： doi.org/10.1007/s00269-007-0182-6

Language：English   Publishing type：Research paper (scientific journal)  

DOI： doi.org/10.1016/j.ssc.2006.10.032

Event date： 2024.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：熊本大学 黒髪キャンパス  

Event date： 2024.3

Language：Japanese   Presentation type：Poster presentation  

Venue：熊本大学 黒髪キャンパス  

Event date： 2024.3

Language：Japanese   Presentation type：Poster presentation  

Venue：熊本大学 黒髪キャンパス  

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Venue：熊本大学 黒髪キャンパス  

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Venue：熊本大学 黒髪キャンパス  

Event date： 2024.1

Language：Japanese   Presentation type：Poster presentation  

Venue：京都大学 桂キャンパス  

Event date： 2024.1

Language：Japanese   Presentation type：Poster presentation  

Venue：京都大学 桂キャンパス  

Event date： 2024.1

Language：Japanese   Presentation type：Poster presentation  

Venue：京都大学 桂キャンパス  

Event date： 2024.1

Language：Japanese   Presentation type：Poster presentation  

Venue：京都大学 桂キャンパス  

Event date： 2024.1

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学  

Event date： 2024.1

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学  

Event date： 2024.1

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学  

Event date： 2024.1

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学  

Event date： 2024.1

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学  

Event date： 2024.1

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学  

Event date： 2024.1

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学  

Event date： 2024.1

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学  

Event date： 2024.1

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学  

Event date： 2024.1

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学  

Event date： 2024.1

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学  

Event date： 2024.1

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学  

Event date： 2024.1

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学  

Event date： 2024.1

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学  

Event date： 2024.1

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学  

Event date： 2024.1

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学  

Event date： 2023.12

Language：English  

Venue：Kyoto International Conference Center   Country：Japan  

Event date： 2023.12

Language：English  

Venue：Kyoto International Conference Center   Country：Japan  

Event date： 2023.12

Language：English   Presentation type：Oral presentation (general)  

Venue：Kyoto International Conference Center   Country：Japan  

Event date： 2023.12

Language：English   Presentation type：Oral presentation (general)  

Venue：Kyoto International Conference Center   Country：Japan  

Event date： 2023.12

Language：Japanese  

Venue：ウインクあいち  

Event date： 2023.12

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：ウインクあいち  

Event date： 2023.11

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋工業大学  

Event date： 2023.11

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋工業大学  

Event date： 2023.11

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋工業大学  

Event date： 2023.11

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋工業大学  

Event date： 2023.11

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Event date： 2023.11

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Event date： 2023.11

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：名古屋大学 東山キャンパス  

Event date： 2023.11

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：名古屋大学 東山キャンパス  

Event date： 2023.11

Language：Japanese   Presentation type：Poster presentation  

Venue：さわやかちば県民プラザ  

Event date： 2023.11

Language：Japanese  

Venue：さわやかちば県民プラザ  

Event date： 2023.11

Language：Japanese  

Venue：さわやかちば県民プラザ  

Event date： 2023.11

Language：Japanese  

Venue：さわやかちば県民プラザ  

Event date： 2023.11

Language：Japanese  

Venue：さわやかちば県民プラザ  

Event date： 2023.11

Language：Japanese  

Venue：さわやかちば県民プラザ  

Event date： 2023.11

Language：Japanese   Presentation type：Poster presentation  

Venue：さわやかちば県民プラザ  

Event date： 2023.11

Language：Japanese   Presentation type：Poster presentation  

Venue：さわやかちば県民プラザ  

Event date： 2023.11

Language：Japanese   Presentation type：Poster presentation  

Venue：さわやかちば県民プラザ  

Event date： 2023.11

Language：Japanese   Presentation type：Poster presentation  

Venue：さわやかちば県民プラザ  

Event date： 2023.11

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：さわやかちば県民プラザ  

Event date： 2023.11

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：さわやかちば県民プラザ  

Event date： 2023.11

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：さわやかちば県民プラザ  

Event date： 2023.11

Language：Japanese   Presentation type：Poster presentation  

Venue：さわやかちば県民プラザ  

Event date： 2023.11

Language：Japanese   Presentation type：Poster presentation  

Venue：さわやかちば県民プラザ  

Event date： 2023.11

Language：Japanese   Presentation type：Poster presentation  

Venue：さわやかちば県民プラザ  

Event date： 2023.11

Language：Japanese   Presentation type：Poster presentation  

Venue：さわやかちば県民プラザ  

Event date： 2023.11

Language：Japanese   Presentation type：Poster presentation  

Venue：さわやかちば県民プラザ  

Event date： 2023.11

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：さわやかちば県民プラザ  

Event date： 2023.11

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：さわやかちば県民プラザ  

Event date： 2023.10

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：山口大常盤キャンパス  

Event date： 2023.10

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：山口大常盤キャンパス  

Event date： 2023.9

Language：English  

Venue：Online  

Event date： 2023.9

Language：English  

Venue：Online  

Event date： 2023.9

Language：English   Presentation type：Oral presentation (general)  

Venue：Online  

Event date： 2023.9

Language：English   Presentation type：Oral presentation (general)  

Venue：Online  

Event date： 2023.9

Language：Japanese  

Event date： 2023.9

Language：Japanese   Presentation type：Poster presentation  

Event date： 2023.9

Language：Japanese   Presentation type：Poster presentation  

Event date： 2023.9

Language：Japanese   Presentation type：Poster presentation  

Event date： 2023.9

Language：Japanese  

Event date： 2023.9

Language：Japanese  

Event date： 2023.9

Language：Japanese   Presentation type：Poster presentation  

Event date： 2023.9

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2023.9

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2023.9

Language：Japanese   Presentation type：Poster presentation  

Event date： 2023.9

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2023.9

Language：Japanese   Presentation type：Poster presentation  

Event date： 2023.9

Language：Japanese   Presentation type：Poster presentation  

Event date： 2023.9

Language：Japanese   Presentation type：Poster presentation  

Event date： 2023.9

Language：Japanese   Presentation type：Poster presentation  

Venue：京都工芸繊維大学　松ヶ崎キャンパス  

Event date： 2023.9

Language：Japanese  

Venue：京都工芸繊維大学　松ヶ崎キャンパス  

Event date： 2023.9

Language：Japanese   Presentation type：Poster presentation  

Venue：京都工芸繊維大学 松ヶ崎キャンパス  

Event date： 2023.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：京都工芸繊維大学 松ヶ崎キャンパス  

Event date： 2023.9

Language：English   Presentation type：Oral presentation (invited, special)  

Venue：Ruedesheim / Rhine, Germany   Country：Germany  

Event date： 2023.9

Language：English   Presentation type：Oral presentation (invited, special)  

Venue：Ruedesheim / Rhine, Germany   Country：Germany  

Event date： 2023.7 - 2023.8

Language：Japanese   Presentation type：Poster presentation  

Venue：東京大学 武田ホール  

Event date： 2023.7 - 2023.8

Language：Japanese   Presentation type：Poster presentation  

Venue：東京大学 武田ホール  

Event date： 2023.7 - 2023.8

Language：Japanese   Presentation type：Poster presentation  

Venue：東京大学 武田ホール  

Event date： 2023.7 - 2023.8

Language：Japanese   Presentation type：Poster presentation  

Venue：東京大学 武田ホール  

Event date： 2023.7 - 2023.8

Language：Japanese   Presentation type：Poster presentation  

Venue：東京大学 武田ホール  

Event date： 2023.7 - 2023.8

Language：Japanese   Presentation type：Poster presentation  

Venue：東京大学 武田ホール  

Event date： 2023.7

Language：English   Presentation type：Oral presentation (invited, special)  

Venue：Edinburgh International Conference Centre  

Event date： 2023.7

Language：English   Presentation type：Poster presentation  

Venue：Edinburgh International Conference Centre  

Event date： 2023.7

Language：English   Presentation type：Poster presentation  

Venue：Edinburgh International Conference Centre  

Event date： 2023.7

Language：English  

Venue：Edinburgh International Conference Centre  

Event date： 2023.7

Language：English   Presentation type：Oral presentation (invited, special)  

Venue：Edinburgh International Conference Centre  

Event date： 2023.7

Language：English   Presentation type：Oral presentation (invited, special)  

Venue：Edinburgh International Conference Centre  

Event date： 2023.7

Language：English   Presentation type：Oral presentation (invited, special)  

Venue：Edinburgh International Conference Centre  

Event date： 2023.7

Language：English   Presentation type：Poster presentation  

Venue：Edinburgh International Conference Centre  

Event date： 2023.7

Language：English   Presentation type：Oral presentation (general)  

Venue：Edinburgh International Conference Centre  

Event date： 2023.7

Language：English   Presentation type：Poster presentation  

Venue：Edinburgh International Conference Centre  

Event date： 2023.7

Language：English   Presentation type：Oral presentation (keynote)  

Venue：the Technische Universität Wien  

Event date： 2023.7

Language：English  

Venue：the Technische Universität Wien  

Event date： 2023.7

Language：English  

Venue：the Technische Universität Wien  

Event date： 2023.7

Language：English   Presentation type：Oral presentation (general)  

Venue：the Technische Universität Wien  

Event date： 2023.7

Language：English   Presentation type：Oral presentation (keynote)  

Venue：the Technische Universität Wien  

Event date： 2023.7

Language：English   Presentation type：Oral presentation (general)  

Venue：the Technische Universität Wien  

Event date： 2023.5

Language：English  

Venue：Le Grand Large, Saint-Malo  

Event date： 2023.5

Language：English  

Venue：Le Grand Large, Saint-Malo  

Event date： 2023.5

Language：English   Presentation type：Oral presentation (general)  

Venue：Le Grand Large, Saint-Malo  

Event date： 2023.5

Language：English   Presentation type：Oral presentation (general)  

Venue：Le Grand Large, Saint-Malo  

Event date： 2023.3

Language：English   Presentation type：Poster presentation  

Event date： 2023.3

Language：English   Presentation type：Poster presentation  

Event date： 2023.3

Language：Japanese   Presentation type：Poster presentation  

Event date： 2023.3

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2023.3

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2023.3

Language：Japanese   Presentation type：Poster presentation  

Event date： 2023.3

Language：Japanese   Presentation type：Poster presentation  

Event date： 2023.3

Presentation type：Poster presentation  

Event date： 2023.2

Language：English   Presentation type：Symposium, workshop panel (public)  

Event date： 2022.12

Language：Japanese   Presentation type：Poster presentation  

Event date： 2022.12

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2022.12

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2022.12

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2022.12

Language：Japanese   Presentation type：Poster presentation  

Event date： 2022.12

Language：Japanese   Presentation type：Poster presentation  

Event date： 2022.12

Language：Japanese   Presentation type：Poster presentation  

Event date： 2022.12

Language：Japanese   Presentation type：Poster presentation  

Event date： 2022.12

Language：Japanese   Presentation type：Poster presentation  

Event date： 2022.11

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2022.11

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2022.11

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2022.11

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2022.11

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2022.11

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2022.9

Language：Japanese   Presentation type：Oral presentation (general)  

Event date： 2022.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2022.3

Language：Japanese   Presentation type：Oral presentation (general)  

Country：United States  

Event date： 2022.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2022.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2022.3

Language：Japanese   Presentation type：Poster presentation  

Venue：オンライン   Country：Japan  

Event date： 2022.3

Language：Japanese   Presentation type：Poster presentation  

Venue：オンライン   Country：Japan  

Event date： 2022.3

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：オンライン   Country：Japan  

Event date： 2022.1

Language：English   Presentation type：Poster presentation  

Country：Japan  

Event date： 2022.1

Language：English   Presentation type：Poster presentation  

Country：Japan  

Event date： 2022.1

Language：Japanese   Presentation type：Poster presentation  

Venue：オンライン   Country：Japan  

Event date： 2022.1

Language：Japanese   Presentation type：Poster presentation  

Venue：オンライン   Country：Japan  

Event date： 2022.1

Language：Japanese   Presentation type：Poster presentation  

Venue：オンライン   Country：Japan  

Event date： 2022.1

Language：Japanese   Presentation type：Poster presentation  

Venue：オンライン   Country：Japan  

Event date： 2022.1

Language：Japanese   Presentation type：Poster presentation  

Venue：オンライン   Country：Japan  

Event date： 2022.1

Language：Japanese   Presentation type：Poster presentation  

Venue：オンライン   Country：Japan  

Event date： 2021.10

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：姫路   Country：Japan  

Event date： 2021.10

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：姫路   Country：Japan  

Event date： 2021.10

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：姫路   Country：Japan  

Event date： 2021.10

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：姫路   Country：Japan  

Event date： 2021.10

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：姫路   Country：Japan  

Event date： 2021.10

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：姫路   Country：Japan  

Event date： 2021.10

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：姫路   Country：Japan  

Event date： 2021.10

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：姫路   Country：Japan  

Event date： 2021.10

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：姫路   Country：Japan  

Event date： 2021.10

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：姫路   Country：Japan  

Event date： 2021.10

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：姫路   Country：Japan  

Event date： 2021.10

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：姫路   Country：Japan  

Event date： 2021.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2021.6

Language：English   Presentation type：Oral presentation (invited, special)  

Country：Austria  

Event date： 2021.6

Language：English   Presentation type：Oral presentation (invited, special)  

Country：Austria  

Event date： 2021.6

Language：English   Presentation type：Oral presentation (invited, special)  

Country：Austria  

Event date： 2021.3

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：オンライン   Country：Japan  

Event date： 2020.12

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2020.12

Language：Japanese   Presentation type：Poster presentation  

Venue：オンライン   Country：Japan  

Event date： 2020.12

Language：Japanese   Presentation type：Poster presentation  

Country：Japan  

Event date： 2020.12

Language：Japanese   Presentation type：Poster presentation  

Venue：オンライン   Country：Japan  

Event date： 2020.12

Language：Japanese   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2020.12

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2020.11

Language：English   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2020.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2020.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：オンライン   Country：Japan  

Event date： 2020.3

Language：Japanese   Presentation type：Poster presentation  

Venue：明治大学 駿河台キャンパス   Country：Japan  

Event date： 2020.3

Language：Japanese   Presentation type：Poster presentation  

Venue：明治大学（駿河台キャンパス）　　（東京都千代田区神田駿河台 1-1）   Country：Japan  

Event date： 2020.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：工学院大学（新宿キャンパス）   Country：Japan  

Event date： 2020.3

Language：Japanese   Presentation type：Poster presentation  

Venue：東京工業大学 大岡山キャンパス（東京都目黒区）   Country：Japan  

Event date： 2020.1

Language：Japanese   Presentation type：Poster presentation  

Venue：ウインクあいち（名古屋市）   Country：Japan  

Event date： 2020.1

Language：Japanese   Presentation type：Poster presentation  

Venue：ウインクあいち（名古屋市）   Country：Japan  

Event date： 2019.12

Language：English   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2019.12

Language：English   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2019.12

Language：English   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2019.10 - 2019.11

Language：Japanese   Presentation type：Poster presentation  

Venue：大阪大学（銀杏会館）   Country：Japan  

Event date： 2019.10 - 2019.11

Language：English   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2019.10

Language：English   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2019.10

Language：Japanese   Presentation type：Poster presentation  

Venue：かでる2・7 北海道立道民活動センター   Country：Japan  

Event date： 2019.10

Language：Japanese   Presentation type：Poster presentation  

Venue：かでる2・7 北海道立道民活動センター（札幌市中央区）   Country：Japan  

Event date： 2019.10

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：かでる2・7 北海道立道民活動センター（札幌市中央区）   Country：Japan  

Event date： 2019.10

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：かでる2・7 北海道立道民活動センター（札幌市中央区）   Country：Japan  

Event date： 2019.10

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：かでる2・7 北海道立道民活動センター（札幌市中央区）   Country：Japan  

Event date： 2019.10

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：かでる2・7 北海道立道民活動センター（札幌市中央区）   Country：Japan  

Event date： 2019.10

Language：Japanese   Presentation type：Poster presentation  

Venue：かでる2・7 北海道立道民活動センター   Country：Japan  

Event date： 2019.10

Language：Japanese   Presentation type：Poster presentation  

Venue：かでる2・7 北海道立道民活動センター（札幌市中央区）   Country：Japan  

Event date： 2019.10

Language：Japanese   Presentation type：Poster presentation  

Venue：かでる2・7 北海道立道民活動センター（札幌市中央区）   Country：Japan  

Event date： 2019.10

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学   Country：Japan  

Event date： 2019.10

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学   Country：Japan  

Event date： 2019.10

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学   Country：Japan  

Event date： 2019.10

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学   Country：Japan  

Event date： 2019.10

Language：Japanese   Presentation type：Poster presentation  

Venue：名古屋大学   Country：Japan  

Event date： 2019.9

Language：Japanese   Presentation type：Poster presentation  

Venue：静岡県浜松市北区三ヶ日町下尾奈 2251   Country：Japan  

Event date： 2019.9

Language：Japanese   Presentation type：Poster presentation  

Venue：静岡県浜松市北区三ヶ日町下尾奈 2251   Country：Japan  

Event date： 2019.9

Language：Japanese   Presentation type：Poster presentation  

Venue：静岡県浜松市北区三ヶ日町下尾奈 2251   Country：Japan  

Event date： 2019.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：岡山大学（津島キャンパス）   Country：Japan  

Event date： 2019.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：岡山大学（津島キャンパス）   Country：Japan  

Event date： 2019.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：岡山大学（津島キャンパス）   Country：Japan  

Event date： 2019.7

Language：Japanese   Presentation type：Poster presentation  

Venue：東京大学 物性研究所   Country：Japan  

Event date： 2019.7

Language：Japanese   Presentation type：Poster presentation  

Venue：東京大学 物性研究所   Country：Japan  

Event date： 2019.7

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：東京大学物性研究所柏キャンパス（本館6階 大講義室（A632））   Country：Japan  

Event date： 2019.7

Language：Japanese   Presentation type：Poster presentation  

Venue：東京大学物性研究所   Country：Japan  

Event date： 2019.7

Language：Japanese   Presentation type：Poster presentation  

Venue：東京大学 物性研究所   Country：Japan  

Event date： 2019.7

Language：Japanese   Presentation type：Poster presentation  

Venue：東京大学 物性研究所   Country：Japan  

Event date： 2019.7

Language：Japanese   Presentation type：Poster presentation  

Venue：東京大学 物性研究所   Country：Japan  

Event date： 2019.6

Language：Japanese   Presentation type：Poster presentation  

Venue：岡崎コンファレンスセンター   Country：Japan  

Event date： 2019.6

Language：Japanese   Presentation type：Poster presentation  

Venue：岡崎コンファレンスセンター   Country：Japan  

Event date： 2019.6

Language：Japanese   Presentation type：Poster presentation  

Venue：岡崎コンファレンスセンター   Country：Japan  

Event date： 2019.6

Language：Japanese   Presentation type：Poster presentation  

Venue：岡崎コンファレンスセンター   Country：Japan  

Event date： 2019.6

Language：Japanese   Presentation type：Poster presentation  

Venue：岡崎コンファレンスセンター   Country：Japan  

Event date： 2019.6

Language：English   Presentation type：Oral presentation (invited, special)  

Country：Spain  

Event date： 2019.4

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Venue：愛知県産業労働センター「ウインクあいち」 15階 交流センター   Country：Japan  

Event date： 2019.3

Language：Japanese   Presentation type：Poster presentation  

Venue：工学院大学（新宿キャンパス）   Country：Japan  

Event date： 2019.3

Language：Japanese   Presentation type：Poster presentation  

Venue：工学院大学（新宿キャンパス）   Country：Japan  

Event date： 2019.3

Language：Japanese   Presentation type：Poster presentation  

Venue：九州大学伊都キャンパス（福岡県福岡市）   Country：Japan  

Event date： 2018.12

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Country：Japan  

Event date： 2018.11

Language：Japanese   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2018.9

Language：Japanese   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2018.9

Language：English   Presentation type：Oral presentation (invited, special)  

Country：Germany  

Event date： 2018.7

Language：English   Presentation type：Oral presentation (general)  

Country：France  

Event date： 2018.6

Language：Japanese   Presentation type：Oral presentation (invited, special)  

Country：Japan  

Event date： 2018.6

Language：English   Presentation type：Oral presentation (invited, special)  

Country：Italy  

Event date： 2018.3

Language：English   Presentation type：Oral presentation (general)  

Country：United States  

Event date： 2018.3

Language：English   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2018.1

Language：Japanese   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2017.11

Language：Japanese   Presentation type：Poster presentation  

Country：Japan  

Event date： 2017.9

Language：Japanese   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2017.8 - 2017.9

Language：English   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2017.8

Language：English   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2017.7

Language：English   Presentation type：Oral presentation (general)  

Country：France  

Event date： 2017.3

Language：Japanese   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2017.3

Language：English   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2016.10

Language：Japanese   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2016.9

Language：English   Presentation type：Oral presentation (general)  

Country：Germany  

Event date： 2016.8

Language：English   Presentation type：Poster presentation  

Country：Japan  

Event date： 2016.5 - 2016.6

Language：English   Presentation type：Oral presentation (general)  

Country：Austria  

Event date： 2016.3

Language：Japanese   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2015.11

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：JMSアステールプラザ（広島市中区）   Country：Japan  

Event date： 2015.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：富山大学（五福キャンパス）   Country：Japan  

Event date： 2015.8 - 2015.9

Language：English   Presentation type：Oral presentation (general)  

Country：Spain  

Event date： 2015.8 - 2015.9

Language：English   Presentation type：Poster presentation  

Country：Japan  

Event date： 2015.8 - 2015.9

Language：English   Presentation type：Oral presentation (general)  

Country：Spain  

Event date： 2015.3

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：岡山大学（津島キャンパス）   Country：Japan  

Event date： 2014.11

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：徳島大学（常三島キャンパス）   Country：Japan  

Event date： 2014.9

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：鹿児島大学（郡元キャンパス）   Country：Japan  

Event date： 2014.8 - 2014.9

Language：English   Presentation type：Oral presentation (invited, special)  

Country：Germany  

Event date： 2014.6

Language：English   Presentation type：Oral presentation (general)  

Country：Korea, Republic of  

Event date： 2014.3

Language：Japanese   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2013.11

Language：Japanese   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2013.9

Language：Japanese   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2013.9

Language：Japanese   Presentation type：Poster presentation  

Country：Japan  

Event date： 2013.7

Language：English   Presentation type：Oral presentation (general)  

Country：United States  

Event date： 2013.7

Language：English   Presentation type：Poster presentation  

Country：United States  

Event date： 2013.7

Language：English   Presentation type：Oral presentation (general)  

Country：United States  

Event date： 2013.3

Language：Japanese   Presentation type：Oral presentation (general)  

Country：Japan  

Event date： 2013.3

Language：Japanese   Presentation type：Poster presentation  

Venue：東京工業大学（大岡山キャンパス）   Country：Japan  

Event date： 2013.3

Language：Japanese   Presentation type：Poster presentation  

Venue：東京工業大学（大岡山キャンパス）   Country：Japan  

Event date： 2012.11

Language：Japanese   Presentation type：Oral presentation (general)  

Venue：岡崎コンファレンスセンター   Country：Japan  

Event date： 2012.11

Language：Japanese   Presentation type：Poster presentation  

Venue：大阪大学   Country：Japan  

Event date： 2012.11

Language：Japanese   Presentation type：Poster presentation  

Venue：大阪大学   Country：Japan  

Event date： 2012.11

Language：Japanese   Presentation type：Poster presentation  

Venue：大阪大学   Country：Japan  

Event date： 2012.11

Language：Japanese   Presentation type：Poster presentation  

Venue：大阪大学   Country：Japan  

Event date： 2012.11

Language：Japanese   Presentation type：Poster presentation  

Venue：大阪大学   Country：Japan  

Event date： 2012.11