博士（工学） （ 2026.3   名古屋大学 ） 

修士 （ 2023.3   名古屋大学 ） 

学士 （ 2021.3   徳島大学 ） 

Natural Science / Semiconductors, optical and atomic physics

Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electronic devices and equipment

大電力マイクロ波無線電力伝送の実現に向けた整流素子開発

Nagoya University   Graduate School of Engineering Electronics 2   Assistant Professor

2026.4

Japan Society for Promotion of Science

2025.4 - 2026.3

Nagoya University

2023.4 - 2026.3

Nagoya University

2021.4 - 2023.3

The University of Tokushima

2019.4 - 2021.3

Kure National College of Technology

2014.4 - 2019.3

応用物理学会

2023.1

IEEE

2022

Exploring Design Guidelines of AlGaN/GaN Gated-Anode Diodes Toward High-Power, High-Efficiency Microwave Rectification Reviewed International journal

Tomoya Watanabe, Hidemasa Takahashi, Ryutaro Makisako, Akio Wakejima, Yuji Ando, Jun Suda

IEEE Transactions on Electron Devices   Vol. 73 ( 4 ) page： 1757 - 1765   2026.4

Proposal of AlGaN/GaN Gated-Anode Diode Model Incorporating Internal HEMT Structure for Loss Analysis Toward Efficient Microwave Rectification Reviewed International journal

Tomoya Watanabe, Hidemasa Takahashi, Ryutaro Makisako, Akio Wakejima, Yuji Ando, Jun Suda

IEEE Transactions on Electron Devices   Vol. 72 ( 8 ) page： 4017 - 4024   2025.8

Impact of a Moderately Doped Contact Layer on Breakdown Voltage in AlGaN/GaN Gated-Anode Diodes for Microwave Rectification Reviewed International journal

Tomoya Watanabe, Hidemasa Takahashi, Ryutaro Makisako, Akio Wakejima, Yuji Ando, Jun Suda

IEEE Transactions on Electron Devices   Vol. 72 ( 3 ) page： 1008 - 1013   2025.3

Proposal of AlGaN/GaN Gated-Anode Diode Model Incorporating Internal HEMT Structure for Loss Analysis towards Efficient Microwave Rectification International conference

Tomoya Watanabe, Hidemasa Takahashi, Akio Wakejima, Yuji Ando, Jun Suda

12th International Workshop on Nitride Semiconductors（IWN-12）  2024.11 

マイクロ波整流用GaNHEMT構造ゲーテッドアノードダイオードの整流効率向上に向けた素子構造の検討

渡邉智也, 高橋英匡, 安藤裕二, 分島彰男, 須田淳

第85回応用物理学会秋季学術講演会  2024.9.19  応用物理学会

Improvement of Breakdown Voltage by Utilizing Moderately-Doped Contact Layers in AlGaN/GaN Gated-Anode Diodes for Microwave Rectification International conference

Tomoya Watanabe, Hidemasa Takahashi, Akio Wakejima, Yuji Ando, Jun Suda

14th International Conference on Nitride Semiconductors（ICNS-14）  2023.11 

マイクロ波整流用AlGaN/GaNワイドリセス構造ゲーテッドアノードダイオードの高耐圧化に向けた中濃度コンタクト層の活用

渡邉智也, 高橋英匡, 安藤裕二, 分島彰男, 須田淳

第70回応用物理学会春季学術講演会  2023.3.18  応用物理学会

大電力マイクロ波整流用GaN HEMT構造ゲーテッドアノードダイオードの開発

Grant number：25KJ1431  2025.4 - 2027.3

日本学術振興会  特別研究員（DC2）  特別研究員奨励費

渡邉智也