Updated on 2025/10/08

写真a

 
KUSABA Akira
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section Designated Associate Professor
Title
Designated Associate Professor
Profile
結晶成長デジタルツイン自動構築技術の開発に取り組んでいます。
External link

Research History 1

  1. Nagoya University   Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section

    2025.6

 

Papers 6

  1. Exploration of Stable Atomic Configurations in Graphene-like BCN Systems by Density Functional Theory and Bayesian Optimization Reviewed International coauthorship International journal

    Taichi Hara, Akira Kusaba, Yoshihiro Kangawa, Tetsuji Kuboyama, David Bowler, Karol Kawka, Pawel Kempisty

    Crystal Growth & Design   Vol. 25 ( 16 ) page: 6719 - 6726   2025.8

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:ACS Publications  

    DOI: 10.1021/acs.cgd.5c00703

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  2. Faceted-rough surface on a crystallite’s shape with nanometer-scale Kardar–Parisi–Zhang kinetic rough surfaces for interface-limited growth Reviewed International journal Open Access

    Noriko Akutsu, Akira Kusaba, Yoshihiro Kangawa, Kozo Fujiwara, Kensaku Maeda, Yasuhiro Akutsu

    Applied Surface Science   Vol. 708   page: 163579   2025.6

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Elsevier  

    DOI: 10.1016/j.apsusc.2025.163579

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  3. First-principles molecular dynamics of H2 molecule formation inside hydrogenated amorphous carbon Reviewed International journal

    Yudai Takei, Junko Ishii, Shigenori Matsushima, Akira Kusaba, Yoshihiro Kangawa, Kazuaki Hanada

    Journal of Nuclear Materials   Vol. 614   page: 155886   2025.5

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:Elsevier  

    DOI: 10.1016/j.jnucmat.2025.155886

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  4. Influence of Intrinsic Point Defects Incorporated from Growth Surface on Atomic Interdiffusion and Unintentional Compositional Gradient in AlGaN/AlN Heterointerfaces Reviewed International coauthorship International journal Open Access

    Yoshihiro Kangawa, Akira Kusaba, Takahiro Kawamura, Pawel Kempisty, Kana Ishisone, Mauro Boero

    Crystal Growth & Design   Vol. 25 ( 3 ) page: 740 - 746   2025.1

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:ACS Publications  

    DOI: 10.1021/acs.cgd.4c01542

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  5. SAT Solver-Driven Approach for Validating Local Electron Counting Rule Reviewed International journal

    Tetsuji Kuboyama, Akira Kusaba

    Journal of Crystal Growth   Vol. 650   page: 127927   2025.1

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:Elsevier  

    DOI: 10.1016/j.jcrysgro.2024.127927

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  6. Augmentation of the Electron Counting Rule with Ising Model Reviewed International coauthorship International journal Open Access

    Karol Kawka, Pawel Kempisty, Konrad Sakowski, Stanislaw Krukowski, Michal Bockowski, David Bowler, Akira Kusaba

    Journal of Applied Physics   Vol. 135   page: 225302   2024.6

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:AIP Publishing  

    DOI: 10.1063/5.0203033

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MISC 1

  1. イジング模型で探る半導体表面の吸着原子配置(最近の研究から) Invited

    草場 彰

    日本物理学会誌   Vol. 80 ( 10 ) page: 589 - 593   2025.10

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)   Publisher:日本物理学会  

    DOI: 10.11316/butsuri.80.10_589

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Presentations 24

  1. Automated Pathway Exploration of Gas-Phase Reaction in AlN Metalorganic Vapor Phase Epitaxy: Initial Decomposition Process of Trimethylaluminum International conference

    Naho Sato, Kanami Sugiyama, Akira Kusaba

    International Conference on Materials and Systems for Sustainability 2025 (ICMaSS2025)  2025.12 

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    Event date: 2025.12

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya   Country:Japan  

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  2. AlN有機金属気相成長法における気相反応初期過程の自動探索

    佐藤南帆, 杉山佳奈美, 草場彰, 寒川義裕

    第54回結晶成長国内会議  2025.11 

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    Event date: 2025.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:金沢   Country:Japan  

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  3. 表面スティフネス・テンソルの結晶ファセット端での普遍的な飛び

    阿久津典子, 草場彰, 寒川義裕, 藤原航三, 前田健作, 阿久津泰弘

    第54回結晶成長国内会議  2025.11 

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    Event date: 2025.11

    Language:Japanese  

    Venue:金沢   Country:Japan  

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  4. β-Ga2O3中の点欠陥に起因する電子構造変化

    河村貴宏, 秋山亨, 草場彰, 寒川義裕

    第54回結晶成長国内会議  2025.11 

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    Event date: 2025.11

    Language:Japanese  

    Venue:金沢   Country:Japan  

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  5. KPZ的に荒れたナノスケール表面から成るメゾスケール小結晶の平衡状態近傍の成長形と後退形

    阿久津典子, 草場彰, 寒川義裕, 藤原航三, 前田健作, 阿久津泰弘

    第54回結晶成長国内会議  2025.11 

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    Event date: 2025.11

    Language:Japanese  

    Venue:金沢   Country:Japan  

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  6. 平衡状態に近い結晶成長形におけるKPZラフ(001)面のファセット端不確定性

    阿久津典子, 草場彰, 寒川義裕, 藤原航三, 前田健作, 阿久津泰弘

    日本物理学会第80回年次大会  2025.9 

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    Event date: 2025.9

    Language:Japanese  

    Venue:広島   Country:Japan  

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  7. β-Ga2O3中の点欠陥による電子構造への影響

    河村貴宏, 秋山亨, 草場彰, 寒川義裕

    第86回応用物理学会秋季学術講演会  2025.9.10 

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    Event date: 2025.9

    Language:Japanese  

    Venue:名古屋   Country:Japan  

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  8. 平衡状態に近い結晶成長形における晶相・晶癖変化:ナノスケールKardar–Parisi–Zhangラフ面の影響

    阿久津典子, 草場彰, 寒川義裕, 藤原航三, 前田健作, 阿久津泰弘

    第86回応用物理学会秋季学術講演会  2025.9.9 

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    Event date: 2025.9

    Language:Japanese  

    Venue:名古屋   Country:Japan  

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  9. Reaction path network of trimethylgallium decomposition process International conference

    Kanami Sugiyama, Akira Kusaba, Hirofumi Sato

    13th Triennial Congress of the World Association of Theoretical and Computational Chemists (WATOC 2025)  2025.6.26 

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    Event date: 2025.6

    Language:English   Presentation type:Poster presentation  

    Venue:Oslo   Country:Norway  

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  10. Systematic reaction path search and its analysis for trimethyl gallium decomposition with NH3 and H2 International conference

    Kanami Sugiyama, Akira Kusaba, Hirofumi Sato

    Molecular Quantum Mechanics Conferences 2025 (MQM2025)  2025.5.26 

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    Event date: 2025.5

    Language:English   Presentation type:Poster presentation  

    Venue:Kyoto   Country:Japan  

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  11. InN MOVPE成長におけるTMIn分解反応過程の理論的研究 Invited

    長嶋佑哉, 渡邉浩崇, 新田州吾, 草場彰, 寒川義裕, 白石賢二

    第72回応用物理学会春季学術講演会  2025.3.16 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:千葉   Country:Japan  

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  12. Development of Scheme and Case Studies in Material Configurations Informatics Invited International conference

    Akira Kusaba

    17th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2025)  2025.3.4 

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    Event date: 2025.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Aichi   Country:Japan  

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  13. 微傾斜GaN(0001)におけるIn拡散ポテンシャル

    西澤宏隆, 草場彰, 寒川義裕

    第53回結晶成長国内会議  2024.11.19 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東京   Country:Japan  

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  14. GaN結晶中のMg拡散機構の解明:モンテカルロシミュレーションによる解析

    伊藤佑太, 草場彰, 渡邉浩崇, 新田州吾, 田中敦之, 本田善央, 寒川義裕, 天野浩

    第53回結晶成長国内会議  2024.11.18 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京   Country:Japan  

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  15. ステップ離脱型ファセット化マクロステップ定常成長の「ステップ」成長方向と積層欠陥抑制

    阿久津典子, 草場彰, 寒川義裕

    第53回結晶成長国内会議  2024.11.18 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京   Country:Japan  

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  16. データ同化を用いた反応速度定数の推定によるGaN MOVPEデジタルツインの構築

    生越奎太朗, 佐野雅季, 草場彰, 白石賢二, 寒川義裕

    第53回結晶成長国内会議  2024.11.19 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東京   Country:Japan  

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  17. 量子化学計算を用いたGaN有機金属気相成長の系統的反応経路探索

    杉山佳奈美, 草場彰

    第53回結晶成長国内会議  2024.11.19 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京   Country:Japan  

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  18. データ駆動Ising模型によるGaN表面再構成の研究 Invited

    草場 彰

    名古屋大学CIRFEシンポジウム「エピタキシャル成長の量子論」  2024.9.27 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋   Country:Japan  

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  19. Adsorption energetics and thermodynamics on semiconductor surfaces based on machine learning Invited International conference

    Akira Kusaba

    5th International Conference on Materials Science and Engineering (Materials Oceania 2024)  2024.9.24 

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    Event date: 2024.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Phuket (Online)   Country:Thailand  

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  20. Determination of Local Electron Counting Rule Satisfaction by SAT Solver International conference

    Akira Kusaba, Tetsuji Kuboyama, Yoshihiro Kangawa

    9th Asian Conference on Crystal Growth and Crystal Technology (CGCT-9)  2024.6 

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    Event date: 2024.6

    Language:English   Presentation type:Poster presentation  

    Venue:Jeju   Country:Korea, Republic of  

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  21. データ駆動イジング模型による半導体表面再構成の研究 Invited

    草場 彰

    第16回ナノ構造エピタキシャル成長講演会  2024.5.30 

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    Event date: 2024.5 - 2024.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:高知   Country:Japan  

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  22. Vacancies in III-Nitrides (II): Diffusion near Hetero Interfaces International conference

    Reo Shimauchi, Yoshihiro Kangawa, Akira Kusaba

    10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2024)  2024.4.24 

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    Event date: 2024.4

    Language:English   Presentation type:Poster presentation  

    Venue:Yokohama   Country:Japan  

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  23. Vacancies in III-Nitrides (I): Formation under Reconstructed Surfaces International conference

    Keitaro Tateyama, Yoshihiro Kangawa, Akira Kusaba, Takahiro Kawamura

    10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2024)  2024.4.24 

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    Event date: 2024.4

    Language:English   Presentation type:Poster presentation  

    Venue:Yokohama   Country:Japan  

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  24. ベイズ最適化とデータ同化による半導体気相成長モデリング Invited

    草場 彰

    日本学術振興会R032委員会第16回研究会  2024.3.8 

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    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:福岡   Country:Japan  

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Research Project for Joint Research, Competitive Funding, etc. 1

  1. 結晶成長デジタルツイン自動構築技術の開発

    2025.6 - 2030.5

    国家戦略分野の若手研究者及び博士後期課程学生の育成事業(BOOST)  次世代AI人材育成プログラム(若手研究者支援)

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    Authorship:Principal investigator  Grant type:Competitive

    Direct Cost: \50000000 )

KAKENHI (Grants-in-Aid for Scientific Research) 5

  1. 半導体化学気相成長の科学

    Grant number:24H00432  2024.4 - 2028.3

    JSPS  KAKENHI  Grant-in-Aid for Scientific Research (A)

    Yoshihiro Kangawa, Akira Kusaba, Kanami Sugiyama, Shugo Nitta

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    Authorship:Coinvestigator(s)  Grant type:Competitive

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  2. 大規模反応ネットワークで捉える気相成長理論の開拓

    Grant number:24K17619  2024.4 - 2027.3

    JSPS  KAKENHI  Grant-in-Aid for Early-Career Scientists

    Akira Kusaba

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    Authorship:Principal investigator  Grant type:Competitive

    Grant amount:\4680000 ( Direct Cost: \3600000 、 Indirect Cost:\1080000 )

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  3. Exploration of Crystal Surface Structures through Enumeration of Discrete Structures on an Infinite Plane and Similarity Design

    Grant number:23H03461  2023.4 - 2028.3

    JSPS  KAKENHI  Grant-in-Aid for Scientific Research (B)

    Tetsuji Kuboyama, Akira Kusaba, Takashi Horiyama, Takeaki Uno, Koichi Hirata

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    Authorship:Coinvestigator(s)  Grant type:Competitive

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  4. Study of fuel hydrogen circulation control with carbon pump

    Grant number:21H04456  2021.4 - 2026.3

    JSPS  KAKENHI  Grant-in-Aid for Scientific Research (A)

    Kazuaki Hanada, Makoto Oya, Hiroaki Nakamura, Seiki Saito, Akira Kusaba, Taiichi Shikama

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    Authorship:Coinvestigator(s)  Grant type:Competitive

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  5. 表面再構成インフォマティクスによる大規模周期構造の探索

    Grant number:20K15181  2020.4 - 2024.3

    JSPS  KAKENHI  Grant-in-Aid for Early-Career Scientists

    Akira Kusaba

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    Authorship:Principal investigator  Grant type:Competitive

    Grant amount:\4160000 ( Direct Cost: \3200000 、 Indirect Cost:\960000 )

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