Updated on 2026/03/30

写真a

 
IMAI Yuki
 
Organization
Graduate School of Engineering Electronics 2 Assistant Professor
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering Electrical Engineering, Electronics, and Information Engineering
Title
Assistant Professor
External link

Degree 1

  1. Doctor(Engineering) （ 2024.3   Nagoya University ） 

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Research Interests 4

  1. Si系量子ドットの自己組織化形成

  2. Growth of Si-based thin film

  3. Nano-scale silicide/Si-interface control

  4. Ultrathin silicide film

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Research Areas 6

  1. Natural Science / Semiconductors, optical and atomic physics  / Epitaxial growth of Si-based thin film

  2. Natural Science / Semiconductors, optical and atomic physics  / Self-assembling Formation of Si-based Nanodot

  3. Natural Science / Semiconductors, optical and atomic physics  / Formation of High-crystalline Ultrathin Silicide Film on Insulator

  4. Natural Science / Semiconductors, optical and atomic physics  / Charge Transport Properties at the Interface of Nano Schottky-junction of Silicide/Si-based Thin Film

  5. Natural Science / Semiconductors, optical and atomic physics  / Atomic-order Doping by Low-pressure Chemical Vapor Deposition

  6. Natural Science / Semiconductors, optical and atomic physics  / Power-loss Mechanism of Si-based Solar Cells

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Current Research Project and SDGs 2

  1. 次世代電界効果トランジスター応用に向けた極薄シリサイド/Si系半導体ナノSchottky接合の低コンタクト抵抗化技術に関する研究

  2. オンシリコン多接合太陽電池への応用が期待されるシリコン基板上シリコンゲルマニウム薄膜の非真空成長と評価に関する研究開発

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Research History 2

  1. Nagoya University   Graduate School of Engineering Electronics 2   Assistant Professor

    2025.3

  2. Nagoya University   Institutes of Innovation for Future Society   Designated Assistant Professor

    2024.4 - 2025.2

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Education 3

  1. Nagoya University

    2021.4 - 2024.3

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    Country： Japan

  2. Nagoya University

    2019.4 - 2021.3

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    Country： Japan

  3. Gifu University

    2015.4 - 2019.3

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    Country： Japan

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Professional Memberships 2

  1. 日本表面真空学会

    2021.12

  2. 応用物理学会

    2019.1

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Committee Memberships 2

  1. 応用物理学会・薄膜表面物理分科会 電子デバイス界面テクノロジー研究会   EDIT31 運営委員  

    2025.4   

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    Committee type：Academic society

  2. The Japan Society of Applied Physics, Thin Film and Surface Physics Division   ISCSI-X Vice-Chairs  

    2025.3   

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    Committee type：Academic society

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Awards 2

  1. 第28回電子デバイス界面テクノロジー研究会 研究会活性化奨励賞

    2023.1   応用物理学会 薄膜・表面物理分科会  

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    Award type：Award from Japanese society, conference, symposium, etc.  Country：Japan

  2. ISCSI-IX Young Researcher Award

    2022.9   Alignment Control of Si-based Quantum Dots

    Yuki Imai, Ryoya Tsuji, Katsunori Makihara, Noriyuki Taoka, Akio Ohta, and Seiichi Miyazaki

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    Award type：Award from international society, conference, symposium, etc.  Country：Japan

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Papers 13

  1. Formation of one-dimensionally self-aligned Si-QDs and their local electron discharging properties Reviewed International coauthorship

    Imai, Y; Makihara, K; Yamamoto, Y; Wen, WC; Schubert, MA; Baek, J; Tsuji, R; Taoka, N; Ohta, A; Miyazaki, S

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 63 ( 4 )   2024.4

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    Authorship：Lead author   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics  

    Self-aligned Si-quantum-dots (Si-QDs) with an areal density as high as ∼10<sup>11</sup> cm<sup>−2</sup> have been fabricated on ultrathin SiO<inf>2</inf> by using a ∼4.5 nm thick poly-Si on insulator (SOI) substrate, and controlling low-pressure CVD using monosilane (SiH<inf>4</inf>), and followed by thermal oxidation. By controlling the thermal oxidation processes of Si-QDs and the poly-Si layer, we have successfully demonstrated the vertical alignment of Si-QDs, where the Si-QDs are also used as a shadow mask of the underlying poly-Si layer. We also demonstrated in-plane alignment of the one-dimensionally self-aligned Si-QDs on line-patterned SiO<inf>2</inf>. In addition, from surface potential measurements by using atomic force microscopy/Kelvin probe force microscopy, we confirmed that the initial surface potential change caused by valence electron extraction from the dots to the tip was stably maintained until ∼120 min, implying the quantum confinement effect at discrete energy levels of the upper and lower-QDs.

    DOI： 10.35848/1347-4065/ad38f7

    Web of Science

    Scopus

  2. Alignment control of self-assembling Si quantum dots Reviewed

    Yuki Imai, Ryoya Tsuji, Katsunori Makihara, Noriyuki Taoka, Akio Ohta, and Seiichi Miyazaki

    Materials Science in Semiconductor Processing   Vol. 162 ( 107526 )   2023.8

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    Authorship：Lead author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1016/j.mssp.2023.107526

  3. Characterization of electronic charged states of high density self-aligned Si-based quantum dots evaluated with AFM/Kelvin probe technique Reviewed Open Access

    Yuki Imai, Katsunori Makihara, Noriyuki Taoka, Akio Ohta, and Seiichi Miyazaki

    Japanese Jounal of Applied Physics   Vol. 61 ( SD ) page： 1012-1 - 1012-5   2022.4

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    Authorship：Lead author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.35848/1347-4065/ac61aa

  4. Interface Chemistry and the Role of an LiF Interlayer in TiO<i><sub>x</sub></i>/Al Electron-Selective Passivating Contacts for Crystalline Si Solar Cells: Insights from Hard X-ray Photoelectron Spectroscopy Reviewed

    Fukaya, S; Gotoh, K; Nishihara, T; Sai, H; Kurokawa, Y; Katsube, R; Imai, Y; Usami, N; Matsui, T

    ACS APPLIED MATERIALS & INTERFACES   Vol. 18 ( 7 ) page： 12093 - 12103   2026.2

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：ACS Applied Materials and Interfaces  

    Titanium oxide (TiO<inf>x</inf>) has emerged as a promising dopant-free electron-selective contact material for crystalline silicon (Si) solar cells owing to its excellent surface passivation capability. However, direct metallization with low work function metals such as aluminum (Al) severely degrades this passivation, underscoring the critical importance of interfacial control for practical applications. In this study, hard X-ray photoelectron spectroscopy (HAXPES) is employed to directly probe the buried n-Si/TiO<inf>x</inf>/Al interfaces, enabling chemical and electronic analysis even beneath metallic overlayers─an ability that is crucial for realistic device architectures. The measurements reveal that Al deposition induces a pronounced chemical reduction of TiO<inf>x</inf>, which is the primary cause of passivation loss. Remarkably, introducing an ∼2-nm-thick LiF interlayer between TiO<inf>x</inf> and Al not only suppresses this interfacial reduction but also tunes the band alignment by lowering the electron energy barrier at the n-Si/TiO<inf>x</inf> interface by ∼0.1 eV, thereby promoting Ohmic carrier transport while preserving passivation. As a result, open-circuit voltages of 661 and 683 mV are demonstrated in full-area and locally metallized device designs, respectively. These insights highlight how interfacial engineering governs both chemical stability and carrier selectivity, offering a versatile design strategy that extends to a broad spectrum of Si-based devices.

    DOI： 10.1021/acsami.5c21863

    Web of Science

    Scopus

    PubMed

  5. A transparent hole-selective passivating contact for crystalline silicon solar cells: niobium-titanium oxide formed by atomic layer deposition Reviewed

    Fukaya, S; Gotoh, K; Kurokawa, Y; Katsube, R; Imai, Y; Usami, N

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 65 ( 2 )   2026.1

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.35848/1347-4065/ae3672

    Web of Science

  6. Study on dry etching of epitaxially grown Si<sub>0.7</sub>Ge<sub>0.3</sub> and Si using H<sub>2</sub> diluted CF<sub>4</sub> plasma Reviewed International coauthorship

    Ozaki, K; Imai, Y; Tsutsumi, T; Imai, Y; Takada, N; Ishikawa, K; Yamamoto, Y; Wen, WC; Makihara, K

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 64 ( 7 )   2025.7

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics Part 1 Regular Papers and Short Notes and Review Papers  

    The influence of H<inf>2</inf> dilution on CF<inf>4</inf>-plasma etching of Si<inf>0.7</inf>Ge<inf>0.3</inf> on Si(001) and Si on Si<inf>0.7</inf>Ge<inf>0.3</inf>/Si(001) was investigated. Selective etching of Si<inf>0.7</inf>Ge<inf>0.3</inf> with respect to Si was achieved without H<inf>2</inf> dilution, with the selectivity ratio of approximately 5.0. As the H<inf>2</inf> dilution ratio increased, the etch rate of Si<inf>0.7</inf>Ge<inf>0.3</inf> decreased monotonically, while that of Si remains nearly unchanged up to 5% H<inf>2</inf> dilution and the etch rate decreased by further H<inf>2</inf> dilution. With an increase in the H<inf>2</inf> dilution, fluorocarbon deposition on Si<inf>0.7</inf>Ge<inf>0.3</inf> and Si surface increased, resulting in suppression of surface roughening. Note that, the selectivity ratio of approximately 3.5 with keeping a surface flatness was achieved with 5% H<inf>2</inf> dilution. Furthermore, fluorocarbon passivation was more prominent on Si than Si<inf>0.7</inf>Ge<inf>0.3</inf>. We demonstrated lateral selective etching of Si<inf>0.7</inf>Ge<inf>0.3</inf> by etching of the 〈110〉-oriented sidewalls of Si<inf>0.7</inf>Ge<inf>0.3</inf>/Si/Si<inf>0.7</inf>Ge<inf>0.3</inf> stacked layers. These results are applicable to Si-nanosheet fabrication for gate-all-around field-effect transistors.

    DOI： 10.35848/1347-4065/adea81

    Web of Science

    Scopus

  7. Self-aligned one-dimensional array of silicon quantum dots on SiO<sub>2</sub> line patterns Reviewed Open Access

    Baek, J; Tsuji, R; Imai, Y; Miyazaki, S; Makihara, K

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 64 ( 5 )   2025.5

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics Part 1 Regular Papers and Short Notes and Review Papers  

    We demonstrated highly selective growth and positioning of Si quantum dots (QDs) on SiO₂ patterns by controlling the reactive area whose surface is terminated with OH bonds for the Si nucleation in low-pressure chemical vapor deposition (LPCVD) using SiH<inf>4</inf>, and evaluated the effects of line and space pattern width on QD growth. Although hemispherical QDs were predominantly formed when the line width was ∼50 nm or greater, elliptical QD shapes became more prevalent as the line width decreased to ∼30 nm or less, resulting in reduced size uniformity. However, it was found that one-dimensional arrays of elliptical QDs with good size uniformity can be realized with line widths of ∼25 nm and space widths of ∼50 nm. Furthermore, by designing a line and space pattern considering the migration length of the Si precursor during the SiH<inf>4</inf>-LPCVD, we successfully formed two-dimensional self-aligned Si-QDs with high uniformity to form a closest-packing structure.

    DOI： 10.35848/1347-4065/adcc3b

    Open Access

    Web of Science

    Scopus

  8. Study of dot size effect on electron emission from Si-QDs multiple-stacked structures Reviewed

    Baek, J; Makihara, K; Obayashi, S; Imai, Y; Taoka, N; Miyazaki, S

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 63 ( 9 )   2024.9

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics Part 1 Regular Papers and Short Notes and Review Papers  

    We have fabricated diodes with different sized Si quantum dots (QDs) by precisely controlled low-pressure chemical vapor deposition using a pure SiH<inf>4</inf> gas and studied the effect of dot size on field electron emission properties of their multiple‒stacked structures. At an applied bias of ∼9 V, the emission current of ∼4.0 nm height dot‒stacks is two orders of magnitude higher than that of ∼5.9 nm height dot‒stacks. These results can be interpreted in terms of an increase in the number of electrons with higher kinetic energy due to the increase in discrete energy levels associated with the reduction in the dot size, which suppresses electron scattering within the dot, and the electric field concentration resulting from the decrease in the curvature of the dot.

    DOI： 10.35848/1347-4065/ad759b

    Web of Science

    Scopus

  9. Self-assembling mechanism of Si-QDs on thermally grown SiO<sub>2</sub> Reviewed

    Baek, J; Imai, Y; Tsuji, R; Makihara, K; Miyazaki, S

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 63 ( 4 )   2024.4

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics  

    The self-assembling formation of Si quantum dots (Si-QDs) on as-grown SiO<inf>2</inf> layers was shown by controlling the early stages of low-pressure chemical vapor deposition of SiH<inf>4</inf>. The QD height and radius distributions assessed by atomic force microscopy and scanning electron microscopy images revealed that the Si-QDs become hemispherical due to them being rate-limited by aggregation, which reduces the surface energy at substrate temperatures above ∼580 °C. Moreover, at temperatures below ∼580 °C, semi-ellipsoidal shaped Si-QDs are formed because the precursor supply is a dominant factor.

    DOI： 10.35848/1347-4065/ad2fe1

    Web of Science

    Scopus

  10. Self-assembling formation of Si-QDs on SiO2 line-patterns Reviewed

    Ryoya Tsuji, Yuki Imai, Jongeun Baek, Katsunori Makihara, and Seiichi Miyazaki

    Japanese Jounal of Applied Physics   Vol. 63 ( 3 ) page： SP04-1 - SP04-4   2024.3

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.35848/1347-4065/ad1ca0

    Web of Science

    Scopus

  11. Room Temperature Light Emission from Superatom-like Ge–Core/Si–Shell Quantum Dots Reviewed International coauthorship Open Access

    Katsunori Makihara, Yuji Yamamoto, Yuki Imai, Noriyuki Taoka, Markus Andreas Schubert, Bernd Tillack, and Seiichi Miyazaki

    Nanomaterials   Vol. 13 ( 1475 )   2023.4

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.3390/nano13091475

    Open Access

  12. Study on silicidation reaction of Fe nanodots with SiH4 Reviewed

    Hiroshi Furuhata, Katsunori Makihara, Yosuke Shimura, Shuntaro Fujimori, Yuki Imai, Akio Ohta, Noriyuki Taoka, and Seiichi Miyazaki

    Applied Physics Express   Vol. 15 ( 5 ) page： 055503-1 - 055503-4   2022.4

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.35848/1882-0786/ac6727

  13. Characterization of Light Emission Properties of Impurity Doped Ge/Si Core–Shell Quantum Dots Reviewed

    Seiichi Miyazaki, Yuki Imai, and Katsunori Makihara

    ECS Transactions   Vol. 109 ( 4 ) page： 335 - 341   2022

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1149/10904.0335ecst

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Presentations 63

  1. Ti膜/シリカフィラー含有エポキシ樹脂界面の化学結合状態評価

    今井 友貴, 尾崎 孝太朗, 佐分利 伊吹, 牧原 克典

    第73回応用物理学会春季学術講演会  2026.3.18  応用物理学会

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    Event date： 2026.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京工業大学 大岡山キャンパス, 東京   Country：Japan  

  2. エピタキシャル成長したSi0.7Ge0.3薄膜におけるHBrプラズマによるドライエッチング International coauthorship

    石井 聡太, 尾崎 孝太朗, 矢野 瑛汰, 佐分利 伊吹, 今井 友貴, 堤 隆嘉, 石川 健治, Yamamoto Yuji, Wen Wei-Chen , 牧原 克典

    第73回応用物理学会春季学術講演会  2026.3.17  応用物理学会

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    Event date： 2026.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京工業大学 大岡山キャンパス, 東京   Country：Japan  

  3. 極薄a-Si/Ni/SOI構造におけるシリサイド化反応-Ni膜厚依存性

    足立 将剛, 今井 友貴, 鷲岡 拓宙, 田岡紀之, 牧原 克典

    第73回応用物理学会春季学術講演会  2026.3.17  応用物理学会

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    Event date： 2026.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京工業大学 大岡山キャンパス, 東京   Country：Japan  

  4. 熱処理温度が極薄Si/Ni/SOI構造のシリサイド化反応に及ぼす影響

    鷲岡 拓宙, 今井 友貴, 足立 将剛, 佐分利 伊吹, 田岡紀之, 尾崎 孝太朗, 牧原 克典

    第73回応用物理学会春季学術講演会  2026.3.17  応用物理学会

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    Event date： 2026.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京工業大学 大岡山キャンパス, 東京   Country：Japan  

  5. 高密度Siナノドット集積構造のパルス電圧依存性

    窪田 遥斗, 白 鍾銀, 今井 友貴, 田岡紀之, 牧原 克典

    第73回応用物理学会春季学術講演会  2026.3.18  応用物理学会

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    Event date： 2026.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京工業大学 大岡山キャンパス, 東京   Country：Japan  

  6. CF4/H2プラズマ照射がSiおよびSi0.7Ge0.3の表面反応に及ぼす影響 International coauthorship

    佐分利 伊吹, 尾崎 孝太朗, 今井 友貴, 堤 隆嘉, 石川 健治, Yamamoto Yuji, Wen Wei-Chen , 牧原 克典

    第73回応用物理学会春季学術講演会  2026.3.17  応用物理学会

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    Event date： 2026.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京工業大学 大岡山キャンパス, 東京   Country：Japan  

  7. Influence of Radical Behavior on Si and Si0.7Ge0.3 Surface Reactions during CF4/H2 Plasma Exposure International coauthorship International conference

    Ibuki Sasburi, Yuki Imai, Takayoshi Tsutsumi, Kenji Ishikawa, Yuji Yamamoto, Wei-Chen Wen, and Katsunori Makihara

    2026.3.4 

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    Event date： 2026.3

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  8. Charge Decay Characteristics of Multiple-Stacked Si Nanodots International conference

    Haruto Kubota, Jongeun Baek, Yuki Imai, Noriyuki Taoka, and Katsunori Makihara

    2026.3.4 

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    Event date： 2026.3

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  9. CF4/H2プラズマ照射がSiおよびSi0.7Ge0.3表面に及ぼす影響 International coauthorship

    佐分利 伊吹, 尾崎 孝太朗, 今井 友貴, 堤 隆嘉, 石川 健治, Yuji Yamamoto, Wei-Chen Wen, 牧原 克典

    第31回電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―  2026.1.29  応用物理学会 薄膜・表面物理分科会

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    Event date： 2026.1

    Language：Japanese   Presentation type：Poster presentation  

    Venue：東レ総合研修センター, 三島, 静岡   Country：Japan  

  10. Study on Si-Nanosheet Formation from Si0.7Ge0.3/Si/Si0.7Ge0.3 Stacked Layers with CF4/H2 Plasma International coauthorship International conference

    Kotaro Ozaki, Yusuke Imai, Takayoshi Tsutsumi, Yuki Imai, Kenji Ishikawa, Yuji Yamamoto, Wei-Chen Wen, and Katsunori Makihara

    2025.12.13 

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    Event date： 2025.12

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  11. Formation of Ultrathin Single-Crystalline NiSi2-On-Insulator Through RTA of Ultrathin a-Si/Ni Layered Structures Formed on SOI Substrates International coauthorship International conference

    Yuki Imai, Shun Tanida, Yuji Yamamoto, Noriyuki Taoka, and Katsunori Makihara

    2025.11.18 

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    Event date： 2025.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  12. Evaluation of Si-Nanosheets Formed by CF4/H2 Plasma Etching of Si0.7Ge0.3/Si/Si0.7Ge0.3 Stacked Structures International coauthorship International conference

    Kotaro Ozaki, Yusuke Imai, Yuki Imai, Takayoshi Tsutsumi, Kenji Ishikawa, Yuji Yamamoto, Wei-Chen Wen, Ibuki Saburi, and Katsunori Makihara

    2025.11.18 

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    Event date： 2025.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  13. Charge Transport Properties through Multiple-Stacked Si Nanodots International conference

    Haruto Kubota, Jongeun Baek, Yuki Imai, Noriyuki Taoka, and Katsunori Makihara

    2025.11.18 

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    Event date： 2025.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  14. Radical Effects on Si and Si0.7Ge0.3 during CF4/H2 Plasma Exposure International coauthorship International conference

    Ibuki Sasburi, Yuki Imai, Takayoshi Tsutsumi, Kenji Ishikawa, Yuji Yamamoto, Wei-Chen Wen, and Katsunori Makihara

    2025.11.18 

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    Event date： 2025.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  15. Epitaxial growth of SiGe with thick G-rich regions on Si(111) substrates by screen-printing and annealing International conference

    Kohei Ito, Ryoji Katsube, Yuki Imai, Satoru Miyamoto, Shota Suzuki, Hideaki Minamiyama, Marwan Dhamrin, and Noritaka Usami

    2025.11.12 

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    Event date： 2025.11

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  16. Formation of Ultrathin Single-Crystalline NiSi2-On-Insulator Through RTA of Ultrathin a-Si/Ni Layered Structures Formed on SOI Substrates International coauthorship International conference

    Yuki Imai, Shun Tanida, Yuji Yamamoto, Noriyuki Taoka, and Katsunori Makihara

    2025.11.11 

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    Event date： 2025.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  17. Formation of Ultrathin Single-Crystalline NiSi2-On-Insulator via Rapid Thermal Annealing of a-Si/Ni/SOI Stacked Structures International coauthorship International conference

    Yuki Imai, Shun Tanida, Yuji Yamamoto, Noriyuki Taoka, and Katsunori Makihara

    2025.9.11 

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    Event date： 2025.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  18. Al–Ge/Si構造の熱処理で形成するSiGe薄膜の近赤外透過偏光顕微鏡による結晶欠陥評価

    岩田 茉奈実, 勝部 涼司, 今井 友貴, 鈴木 紹太, 南山 偉明, ダムリン マルワン, 宇佐美 徳隆

    第 86回応用物理学会秋季学術講演会  2025.9.9  応用物理学会

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    Event date： 2025.9

    Language：Japanese   Presentation type：Poster presentation  

    Venue：名城大学 塩釜口キャンパス, 名古屋, 愛知   Country：Japan  

  19. In融液の完全濡れ現象を利用したSi基板上へのInPの直接製膜

    松永 太陽, 今井 友貴, 宇佐美 徳隆, 勝部 涼司

    第 86回応用物理学会秋季学術講演会  2025.9.9  応用物理学会

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    Event date： 2025.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：名城大学 塩釜口キャンパス, 名古屋, 愛知   Country：Japan  

  20. Si0.7Ge0.3/Si/Si0.7Ge0.3積層構造のCF4/H2プラズマエッチングにより形成したSiナノシートの欠陥評価 International coauthorship

    尾崎孝太朗, 今井祐輔, 今井友貴, 堤隆嘉, 石川健治, 山本裕司, Wen Wei-Chen, 牧原克典

    第 86回応用物理学会秋季学術講演会  2025.9.9  応用物理学会

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    Event date： 2025.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：名城大学 塩釜口キャンパス, 名古屋, 愛知   Country：Japan  

  21. Siナノドット多重集積構造における電荷輸送特性

    窪田 遥斗, 今井 友貴, 白 鍾銀, 田岡 紀之, 牧原 克典

    第 86回応用物理学会秋季学術講演会  2025.9.9  応用物理学会

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    Event date： 2025.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：名城大学 塩釜口キャンパス, 名古屋, 愛知   Country：Japan  

  22. パルスレーザーを用いた溶融・非平衡凝固による高Sn組成Ge1-xSnx混晶製膜プロセスの構築

    鈴木 祐介, 勝部 涼司, 今井 友貴, 鈴木 紹太, 南山 偉明, ダムリン マルワン, 柴山 茂久, 中塚 理, 宇佐美 徳隆

    第 86回応用物理学会秋季学術講演会  2025.9.8  応用物理学会

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    Event date： 2025.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：名城大学 塩釜口キャンパス, 名古屋, 愛知   Country：Japan  

  23. 極薄a-Si/Ni/SOI積層構造の急速熱処理によるSiO2上単結晶NiSi2の形成 International coauthorship

    今井友貴, 谷田駿, 山本裕司, 田岡紀之, 牧原 克典

    第 86回応用物理学会秋季学術講演会  2025.9.9  応用物理学会

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    Event date： 2025.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：名城大学 塩釜口キャンパス, 名古屋, 愛知   Country：Japan  

  24. Electron Transport Properties of Multiple-Stacked Si Nanodots International conference

    Haruto Kubota, Jongeun Baek, Yuki Imai, Noriyuki Taoka, and Katsunori Makihara

    2025.7.4 

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    Event date： 2025.7

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  25. GeH4-CVDによるSi(111)基板上SiGe層におけるGe組成の向上

    今井 友貴, 伊藤 耕平, 勝部 涼司, 宮本 聡, 鈴木 紹太, 南山 偉明, ダムリン マルワン, 宇佐美 徳隆

    第 72 回応用物理学会春季学術講演会  2025.3.16  応用物理学会

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    Event date： 2025.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京理科大学 野田キャンパス, 千葉   Country：Japan  

  26. MAPbI3/SiGe タンデム太陽電池を指向したSi基板状SiGeの組成・製膜プロセス設計

    八木 健太, 勝部涼司, 今井友貴, 伊藤耕平, 鈴木紹太, 南山偉明, ダムリンマルワン, 宇佐美徳隆

    第 72 回応用物理学会春季学術講演会  2025.3.17  応用物理学会

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    Event date： 2025.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京理科大学 野田キャンパス, 千葉   Country：Japan  

  27. Si基板上に形成した高Ge組成SiGe薄膜のクラック低減に向けた熱処理条件の検討

    伊藤耕平, 勝部涼司, 今井友貴, 宮本聡, 鈴木紹太, 南山偉明, ダムリンマルワン, 宇佐美徳隆

    第 72 回応用物理学会春季学術講演会  2025.3.15  応用物理学会

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    Event date： 2025.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京理科大学 野田キャンパス, 千葉   Country：Japan  

  28. Effect of GeHH4-CVD conditions on the Ge compositions of SiGe films on Si(111) substrate International conference

    uki Imai, Kohei Ito, Ryoji Katsube, Satoru Miyamoto, Shota Suzuki, Hideaki Minamiyama, Marwan Dhamrin, and Noritaka Usami

    2025.3.13 

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    Event date： 2025.3

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  29. Impact of growth conditions in UHV-CVD on the Ge composition in SiGe layers on Si substrate International conference

    Yuki Imai, Kohei Ito, Ryoji Katsube, Satoru Miyamoto, Shota Suzuki, Hideaki Minamiyama, Marwan Dhamrin, and Noritaka Usami

    2025.3.2 

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    Event date： 2025.3

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  30. 印刷とアニールにより形成したSiGe薄膜に及ぼすアニール条件の影響

    伊藤耕平, 宮本聡, 勝部涼司, 今井友貴, 鈴木紹太, 南山偉明, ダムリンマルワン, 宇佐美徳隆

    第11回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会  2024.11.2  応用物理学会

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    Event date： 2024.11

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：名古屋大学 東山キャンパス, 名古屋, 愛知   Country：Japan  

  31. スクリーン印刷と焼成による厚いGe-rich領域を伴うSiGe薄膜のSi基板上へのエピタキシャル成長

    伊藤耕平, 勝部涼司, 今井友貴, 宮本聡, 鈴木紹太, 南山偉明, ダムリンマルワン, 宇佐美徳隆

    第 85 回応用物理学会秋季学術講演会  2024.9.19  応用物理学会

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    Event date： 2024.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：朱鷺メッセほか, 新潟   Country：Japan  

  32. Selective Growth of Si Quantum Dots on SiO2 Line Patterns International conference

    Jongeun Baek, Ryoya Tsuji, Yuki Imai, Seiichi Miyazaki, and Katsunori Makihara

    2024.7.8 

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    Event date： 2024.7

    Language：English   Presentation type：Oral presentation (general)  

    Country：Korea, Republic of  

  33. SiO2ラインパターン上へのSi量子ドットの自己組織化形成-ラインおよびスペース幅依存性

    白 鍾銀, 辻 綾哉, 今井 友貴, 牧原 克典, 宮﨑 誠一

    第71回応用物理学会秋季学術講演会  2024.3.25  応用物理学会

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    Event date： 2024.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京都市大学 世田谷キャンパス, 東京   Country：Japan  

  34. 極薄熱酸化SiO2上の自己組織化Si量子ドットの形成機構

    白 鍾銀, 今井 友貴, 辻 綾哉, 牧原 克典, 宮﨑 誠一

    第29回電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―  2024.2.1  応用物理学会 薄膜・表面物理分科会

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    Event date： 2024.1 - 2024.2

    Language：Japanese   Presentation type：Poster presentation  

    Venue：東レ総合研修センター, 三島, 静岡   Country：Japan  

  35. 一次元連結・高密度Si量子ドットの形成と局所帯電特性評価

    今井友貴, 牧原克典, 山本 裕司, Wen Wei-Chen, Schubert Andreas Markus, 辻 綾哉, 白 鍾銀, 宮﨑誠一

    第29回電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―  2024.2.1  応用物理学会 薄膜・表面物理分科会

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    Event date： 2024.1 - 2024.2

    Language：Japanese   Presentation type：Poster presentation  

    Venue：東レ総合研修センター, 三島, 静岡   Country：Japan  

  36. Self-Assembling Mechanism of Si-QDs on Thermally-Grown SiO2 International conference

    Jongeun Baek, Yuki Imai, Ryoya Tsuji, Katsunori Makihara, Noriyuki Taoka, Akio Ohta, and Seiichi Miyazaki

    14th International Workshop on New Group IV Semiconductor Nanoelectronics  2023.12  Research Institute of Electrical Communication, Tohoku University

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    Event date： 2023.12

    Language：English   Presentation type：Oral presentation (general)  

    Venue：Research Institute of Electrical Communication, Tohoku University, Sendai, Miyagi   Country：Japan  

  37. Formation and Local Electron Charging Properties of One-Dimensionally Self-Aligned Si-QDs International coauthorship International conference

    Yuki Imai, Katsunori Makihara, Yuji Yamamoto, Wei-Chen Wen, Markus Andreas Schubert, Jongeun Baek, Ryoya Tsuji, Noriyuki Taoka, Akio Ohta, and Seiichi Miyazaki

    14th International Workshop on New Group IV Semiconductor Nanoelectronics  2023.12  Research Institute of Electrical Communication, Tohoku University, Sendai, Miyagi

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    Event date： 2023.12

    Language：English   Presentation type：Oral presentation (general)  

    Venue：Research Institute of Electrical Communication, Tohoku University   Country：Japan  

  38. Formation of One-Dimensionally Aligned Si-QDs on SiO2 Line-Patterns International coauthorship International conference

    Ryoya Tsuji, Yuki Imai, Jongeun Baek, Katsunori Makihara, and Seiichi Miyazaki

    14th International Workshop on New Group IV Semiconductor Nanoelectronics  2023.12  Research Institute of Electrical Communication, Tohoku University

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    Event date： 2023.12

    Language：English   Presentation type：Poster presentation  

    Venue：Research Institute of Electrical Communication, Tohoku University, Sendai, Miyagi   Country：Japan  

  39. Growth Mechanisms of Self-Assembling Si-QDs on Thermally-Grown SiO2 International conference

    Jongeun Baek, Yuki Imai, Ryoya Tsuji, Katsunori Makihara, Noriyuki Taoka, Akio Ohta, and Seiichi Miyazaki

    35th International Microprocess and Nanotechnology Conference (MNC 2023)  2023.11  JSAP

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    Event date： 2023.11

    Language：English   Presentation type：Oral presentation (general)  

    Venue：Keio Plaza Hotel Sapporo, Sapporo, Hokkaido   Country：Japan  

  40. 一次元連結Si量子ドットの高密度・一括形成と局所帯電特性評価

    今井友貴, 牧原克典, 山本 裕司, Wen Wei-Chen, Schubert Andreas Markus, 辻 綾哉, 白 鍾銀, 宮﨑誠一

    第10回 応用物理学会 名古屋大学スチューデントチャプター東海地区学術講演会  2023.11.3  応用物理学会 東海支部

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    Event date： 2023.11

    Language：Japanese  

    Venue：名古屋大学 東山キャンパス, 名古屋, 愛知   Country：Japan  

  41. 極細SiO2ラインパターン上へのSi量子ドットの自己組織化形成

    辻 綾哉, 今井 友貴, 白 鍾銀, 牧原 克典, 宮﨑 誠一

    第84回応用物理学会秋季学術講演会  2023.9.20  応用物理学会

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    Event date： 2023.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：熊本城ホールほか3会場, 熊本   Country：Japan  

  42. 熱酸化SiO2上へ自己組織化形成したSi量子ドットの成長機構

    白 鍾銀, 今井 友貴, 辻 綾哉, 牧原 克典, 宮﨑 誠一

    第84回応用物理学会秋季学術講演会  2023.9.20  応用物理学会

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    Event date： 2023.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：熊本城ホールほか3会場, 熊本   Country：Japan  

  43. 一次元縦積み連結Si量子ドットの形成と局所帯電特性評価 International coauthorship

    今井 友貴, 牧原 克典, 山本 裕司, Wen Wei-Chen, Schubert Andreas Markus, 白 鍾銀, 辻 綾哉, 宮﨑 誠一

    第84回応用物理学会秋季学術講演会  2023.9.20  応用物理学会

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    Event date： 2023.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：熊本城ホールほか3会場, 熊本   Country：Japan  

  44. Self-Assembling Formation of Si-QDs on SiO2 Line-Patterns International conference

    Ryoya Tsuji, Yuki Imai, Jongeun Baek, Katsunori Makihara, and Seiichi Miyazaki

    JSAP 2023 International Conference on Solid State Devices and Materials  2023.9  JSAP

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    Event date： 2023.9

    Language：English   Presentation type：Oral presentation (general)  

    Venue：Nagoya Congress Center, Nagoya, Aichi   Country：Japan  

  45. Formation of One-Dimensionally Self-Aligned Si-QDs and Their Local Electron Charging Properties International coauthorship International conference

    Yuki Imai, Katsunori Makihara, Yuji Yamamoto, Wei-Chen Wen, Markus Andreas Schubert, Jongeun Baek, Ryoya Tsuji, Noriyuki Taoka, Akio Ohta, and Seiichi Miyazaki

    JSAP 2023 International Conference on Solid State Devices and Materials  2023.9  JSAP

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    Event date： 2023.9

    Language：English   Presentation type：Oral presentation (general)  

    Venue：Nagoya Congress Center, Nagoya, Aichi   Country：Japan  

  46. Impact of Dot Size on Electron Emission from Multiple-Stacked Si-QDs International conference

    Katsunori Makihara, Shuji Obayashi, Yuki Imai, Noriyuki Taoka, and Seiichi Miyazaki

    JSAP 2023 International Conference on Solid State Devices and Materials  2023.9  JSAP

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    Event date： 2023.9

    Language：English   Presentation type：Poster presentation  

    Venue：Nagoya Congress Center, Nagoya, Aichi   Country：Japan  

  47. Formation and luminescence studies of Ge/Si core-shell quantum dots Invited International conference

    Seiichi Miyazaki, Katsunori Makihara, and Yuki Imai

    2023 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistor  2023.5 

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    Event date： 2023.5

    Language：English   Presentation type：Oral presentation (invited, special)  

    Venue：Otaru, Hokkaido   Country：Japan  

  48. Si 量子ドットの一次元配列制御

    辻綾哉, 今井友貴, 牧原克典, 田岡紀之, 大田晃生, 宮﨑誠一

    第 69 回応用物理学会春季学術講演会  2023.3.23  応用物理学会

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    Event date： 2023.3

    Language：Japanese   Presentation type：Poster presentation  

    Venue：青山学院大学 相模原キャンパス, 神奈川   Country：Japan  

  49. 極薄SiO2/Poly-Si/SiO2上に形成したSi量子ドットの局所帯電特性 International coauthorship

    今井 友貴, 牧原 克典, 山本 裕司, Wen Wei-Chen, 田岡 紀之, 大田 晃生, 宮﨑 誠一

    第70回応用物理学会春季学術講演会  2023.3.17  応用物理学会

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    Event date： 2023.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：上智大学 四谷キャンパス, 東京   Country：Japan  

  50. Electroluminescence from High Density Ge/Si Quantum Dots on Sub-micron Patterned Si Wires International conference

    Yuki Imai, Katsunori Makihara, Noriyuki Taoka, Akio Ohta, and Seiichi Miyazaki

    ISPlasma2023/IC-PLANT2023  2023.3 

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    Event date： 2023.3

    Language：English   Presentation type：Poster presentation  

    Venue：Gifu University, Gifu, Gifu   Country：Japan  

  51. AFM/ケルビンプローブモードによる超高密度一次元連結Si系量子ドットの帯電状態評価

    今井友貴, 牧原克典, 田岡紀之, 大田晃生, 宮﨑誠一

    第28回電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―  2023.2.3  応用物理学会 薄膜・表面物理分科会

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    Event date： 2023.2

    Language：Japanese   Presentation type：Poster presentation  

    Venue：東レ総合研修センター, 三島, 静岡   Country：Japan  

  52. Formation of Fe-silicide-NDs and Characterization of Their PL Properties International conference

    Haruto Saito, Katsunori Makihara, Yoshiaki Hara, Shuntaro Fujimori, Yuki Imai, Noriyuki Taoka, Akio Ohta, and Seiichi Miyazaki

    13th International Workshop on New Group IV Semiconductor Nanoelectronics  2023.1  Research Institute of Electrical Communication, Tohoku University

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    Event date： 2023.1

    Language：English   Presentation type：Poster presentation  

    Venue：Research Institute of Electrical Communication, Tohoku University, Sendai, Miyagi   Country：Japan  

  53. Electronic Charged States of High Density Self-aligned Si-based Quantum Dots as Evaluated by Using an AFM/Kelvin Probe Technique International conference

    Yuki Imai, Katsunori Makihara, Noriyuki Taoka, Akio Ohta, and Seiichi Miyazaki

    13th International Workshop on New Group IV Semiconductor Nanoelectronics  2023.1.24  esearch Institute of Electrical Communication, Tohoku University

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    Event date： 2023.1

    Language：English   Presentation type：Oral presentation (general)  

    Venue：esearch Institute of Electrical Communication, Tohoku University, Sendai, Miyagi   Country：Japan  

  54. Alignment Control of Si-based Quantum Dots International conference

    Yuki Imai, Ryoya Tsuji, Katsunori Makihara, Noriyuki Taoka, Akio Ohta, and Seiichi Miyazaki

    The 3rd International Workshop on Advanced Nanomaterials for Future Electron Devices (IWAN)  2022.11.28 

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    Event date： 2022.11

    Language：English   Presentation type：Oral presentation (general)  

    Venue：IHP, Frankfurt an der oder, Brandenburg   Country：Germany  

  55. 高温短時間熱処理による極薄SiO2上に形成したa-Si膜の結晶化

    今井 友貴, 牧原 克典, 田岡 紀之, 大田 晃生, 宮﨑 誠一

    第83回応用物理学会秋季学術講演会  2022.9.21  応用物理学会

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    Event date： 2022.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東北大学 川内北キャンパス, 仙台, 宮城   Country：Japan  

  56. Alignment Control of Self-Assembling Si Quantum Dots

    Yuki Imai, Ryoya Tsuji, Katsunori Makihara, Noriyuki Taoka, Akio Ohta, and Seiichi Miyazaki

    9th International Symposium on Control of Semiconductor Interfaces Technical Program (ISCSI-IX)  2022.9 

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    Event date： 2022.9

    Language：English   Presentation type：Oral presentation (general)  

    Venue：Nagoya University, Higashiyama Campus, Nagoya, Aichi   Country：Japan  

  57. Structural and Light-emission Properties of High-density Superatom-like Ge-core/Si-shell Quantum Dots International coauthorship International conference

    Katsunori Makihara, Yuji Yamamoto, Yuki Imai, Noriyuki Taoka, Markus Andreas Schubert, Bernd Tillack, and Seiichi Miyazaki

    Katsunori Makihara, Yuji Yamamoto, Yuki Imai, Noriyuki Taoka, Markus Andreas Schubert, Bernd Tillack, and Seiichi Miyazaki  2022.9.6 

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    Event date： 2022.9

    Language：English   Presentation type：Oral presentation (general)  

    Venue：Nagoya University Higashiyama Campus, Nagoya, Aichi   Country：Japan  

  58. AFM/KFM による超高密度一次元連結 Si 系量子 ドットの局所帯電電荷分布計測

    今井友貴, 牧原克典, 田岡紀之, 大田晃生, 宮﨑誠一

    第 21 回日本表面真空学会中部支部学術講演会  2021.12.18  日本表面真空学会中部支部

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    Event date： 2021.12

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  59. Characterization of Electronic Charged States of High Density Self-aligned Si-based Quantum Dots Evaluated with AFM/Kelvin Probe Technique International conference

    Yuki Imai, Katsunori Makihara, Noriyuki Taoka, Akio Ohta, and Seiichi Miyazaki

    34th International Microprocess and Nanotechnology Conference (MNC 2021)  2021.10  JSAP

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    Event date： 2021.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  60. AFM/KFM による超高密度一次元連結 Si 系量子 ドットの局所帯電電荷計測

    今井友貴, 牧原克典, 田岡紀之, 大田晃生, 宮﨑誠一

    第 82 回応用物理学会秋季学術講演会  2021.9.10  応用物理学会

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    Event date： 2021.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  61. GeコアSi量子ドットにおけるGe選択成長温度が発光特性に及ぼす影響

    藤森俊太郎, 前原拓哉, 今井友貴, 池田弥央, 牧原克典, 宮﨑誠一

    第80回応用物理学会秋季学術講演会  2019.9.19  応用物理学会

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    Event date： 2019.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：北海道大学 札幌キャンパス, 札幌, 北海道   Country：Japan  

  62. Power Loss Mechanisms of Ultra Thin a-Si:H/c-Si Heterojunction Solar Cells with over 20% Efficiencies International conference

    Yuki Imai, Hitoshi Sai, Masayuki Kozawa, Mayumi Tanabe, Takuya Matsui, and 〇Hiroyuki Fujiwara

    The 36th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC)  2019.9 

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    Event date： 2019.9

    Language：English   Presentation type：Poster presentation  

    Venue：Marseille   Country：France  

  63. 超薄型 a-Si:H/c-Si ヘテロ接合太陽電池 の光学損失解析

    今井友貴, 齋均, 小沢将征, 田辺まゆみ, 松井卓矢, 藤原裕之

    第 66 回応用物理学会春季学術講演会  2019.3.9  応用物理学会

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    Event date： 2019.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京工業大学, 東京   Country：Japan  

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Other research activities 1

  1.  文部科学省「科学技術イノベーション創出に向けた大学フェローシップ創設事業」、2023 年度名古屋大学 融合フロンティアフェローシップ、量子科学分野, 優秀フェロー

    2023

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Research Project for Joint Research, Competitive Funding, etc. 1

  1. 次世代ICパッケージ基板の小径ビア・微細配線形成に必要なドライプロセスの研究

    2025.4

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    Authorship：Coinvestigator(s)  Grant type：Collaborative (industry/university)

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Industrial property rights 1

  1. 配線基板

    牧原 克典、今井 友貴、酒井 純、吉川 恭平

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    Applicant：国立大学法人東海国立大学機構、イビデン株式会社

    Application no：C20250550  Date applied：2026.2

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Teaching Experience (On-campus) 15

  1. Seminar on Semiconductor Engineering and Integration Science 2E

    2025

  2. Seminar on Semiconductor Engineering and Integration Science 2C

    2025

  3. Seminar on Semiconductor Engineering and Integration Science 2A

    2025

  4. Advanced Experiments and Exercises in Electronic Engineering

    2025

  5. Seminar on Semiconductor Engineering and Integration Science 1C

    2025

  6. Seminar on Semiconductor Engineering and Integration Science 1A

    2025

  7. Solid-state Electronics and Tutorial

    2025

  8. Seminar on Semiconductor Engineering and Integration Science 2D

    2025

  9. Seminar on Semiconductor Engineering and Integration Science 2B

    2025

  10. Seminar on Semiconductor Engineering and Integration Science 1D

    2025

  11. Seminar on Semiconductor Engineering and Integration Science 1B

    2025

  12. 電気電子情報工学実験第1

    2025

  13. 電気電子情報工学実験第2

    2025

  14. 自動車工学実験1

    2025

  15. 熱・統計力学

    2025

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Social Contribution 2

  1. テクノフロンティアセミナー (TEFS) 2025

    Role(s)：Planner,　Demonstrator

    2025.8

  2. 2025年再生可能エネルギー世界展示会

    Role(s)：Demonstrator

    2025.1

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Academic Activities 1

  1. UPWARDS夏季受入特別プログラム2025 International contribution

    Role(s)：Planning, management, etc.

    2025.3

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