Updated on 2025/08/29

写真a

 
HONDA Anna
 
Organization
Institute of Materials and Systems for Sustainability Advanced Measurement Technology Center (AMTC) Designated Assistant Professor
Title
Designated Assistant Professor
Contact information
メールアドレス
Homepage
https://www.katolab.nuee.nagoya-u.ac.jp/
Profile
Favorite Quote:
Grant me the serenity to accept the things I cannot change, courage to change the things I can, and wisdom to know the difference. by Reinhold Niebuhr

Degree 1

  1. Doctor of Engineering （ 2008.3   Nagoya University ） 

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Research Interests 7

  1. Nanofabrication and analysis

  2. Time-resolved photoluminescence analysis

  3. DLTS/MCTS

  4. III-V nitrides crystal defects

  5. RF sputtering deposition

  6. Nonlinear optics

  7. Femtosecond laser

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Research Areas 3

  1. Nanotechnology/Materials / Thin-film surfaces and interfaces  / Thin layer, Surface/Interface properties

  2. Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electronic devices and equipment  / Electronic device, Power device

  3. Nanotechnology/Materials / Nanomaterials  / III-V nitride semiconductors

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Current Research Project and SDGs 2

  1. Investigation of Defect Mechanisms and Development of Evaluation Methods for III-V Nitride Semiconductors

  2. Development of Novel Devices Using Hybrid Fusion Materials

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Research History 7

  1. Nagoya University   Institute for Future Materials Systems, Advanced Measurement Technology Practice Center   Designated Assistant Professor

    2023.4

  2. Photoelectron Soul Inc.   Research and Development Department   R&D Engineer

    2019.4 - 2021.1

  3. Nagoya Institute of Technology   Creative Engineering Education Center   Academic Specialist

    2015.6 - 2017.9

  4. National Institute of Advanced Industrial Science and Technology (AIST), Chubu Center   Research Institute for Advanced Manufacturing   Postdoctor

    2013.8 - 2015.3

  5. Aichi Institute of Technology   Graduate School of Engineering, Department of Electrical and Electronic Engineering   Postdoctor

    2011.4 - 2013.3

  6. Toyota Central R&D Labs., Inc.   Information Electronics Research Division   Visiting Researcher

    2008.4 - 2010.3

  7. Nagoya University   Graduate School of Engineering, Department of Electronics and Information Systems   JSPS Research Fellowship for Young Scientists (DC2)

    2006.4 - 2008.3

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    Country：Japan

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Education 5

  1. Nagoya University   Graduate School of Engineering   Doctoral Course　Electrical Engineering and Computer Science

    2005.4 - 2008.3

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    Country： Japan

  2. Nagoya University   Graduate School of Engineering   Master Course　Electronic Engineering

    2003.4 - 2005.3

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    Country： Japan

  3. Nagoya University   Graduate School of Engineering   Quantum Engineering

    2002.4 - 2003.3

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    Country： Japan

  4. National Korea Maritime University   Nano Semiconductor Engineering

    1998.3 - 2002.2

  5. Private St. Theresa Girls' High School   Science Course

    1995.3 - 1998.2

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Professional Memberships 3

  1. American Physical Society (APS)   Regular Member

    2025.8

  2. Institute of Electrical and Electronics Engineers (IEEE)   Regular Member

    2024.8

  3. The Japan Society of Applied Physics (JSAP)   Regular Member

    2003.4

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Awards 5

  1. Best Poster Award First Place

    2024.11   12th International workshop on nitride semiconductors   Optical and magnetic properties of GaN crystals varied C doping concentration

    Anna Honda, Hirotaka Watanabe, Takeshi Kato, Yoshio Honda, Hiroshi Amano

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    Award type：Award from international society, conference, symposium, etc.  Country：United States

  2. Certificate of Senior Engineer in Nanofabrication and Device Process

    2024.12   Advanced Research Infrastructure for Materials and Nanotechnology  

    Anna Honda

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    Country：Japan

  3. ARIM Outstanding Achievement Award

    2023.12   Advanced Research Infrastructure for Materials and Nanotechnology   Fabrication of non-spatially reversible symmetric magnetic materials and search for novel spin-optical functions

    Matsubara Masakazu, Honda Anna, Oshima Daiki, Kato Takeshi

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    Award type：Award from Japanese society, conference, symposium, etc.  Country：Japan

  4. Certificate of Engineer in Nanofabrication and Device Process

    2022.12   Advanced Research Infrastructure for Materials and Nanotechnology  

    Honda Anna

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    Country：Japan

  5. Second Place Award for Best Poster Presentation

    2014.8   The 2014 Asian SOFC Symposium and Exhibition   Structural and electrical properties of Y- and Yb-doped Ba(CeZr)O3 proton conductor

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    Award type：Award from international society, conference, symposium, etc.  Country：Korea, Republic of

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Papers 18

  1. Electron Spin Resonance and Photoluminescence Studies of Carbon-Induced Point Defects in GaN: Influence of Doping Concentration and Method Reviewed

    Anna Honda, Hirotaka Watanabe, Takeshi Kato, Yoshio Honda, Hiroshi Amano

    Physica Status Solidi (b) Basic Solid State Physics     2025.5

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    Authorship：Lead author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： http://doi.org/10.1002/pssb.202500012

    DOI： http://doi.org/10.1002/pssb.202500012

  2. Investigation of carbon-related complexes in highly C-doped GaN grown by metalorganic vapor phase epitaxy Reviewed

    Anna Honda, Hirotaka Watanabe, Wakana Takeuchi, Yoshio Honda, Hiroshi Amano, Takeshi Kato

    Japanese Journal of Applied Physics   Vol. 63 ( 4 ) page： 041005-1 - 041005-5   2024.4

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    Authorship：Lead author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.35848/1347-4065/ad3b54

    DOI： 10.35848/1347-4065/ad3b54

    Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/ad3b54

  3. Terahertz spin ratchet effect in magnetic metamaterials Reviewed International coauthorship

    Hild M., Golub L. E., Fuhrmann A., Otteneder M., Kronseder M., Matsubara M., Kobayashi T., Oshima D., Honda A., Kato T., Wunderlich J., Back C., Ganichev S. D.

    PHYSICAL REVIEW B   Vol. 107 ( 15 )   2023.4

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    Publishing type：Research paper (scientific journal)   Publisher：Physical Review B  

    We report on spin ratchet currents driven by terahertz radiation electric fields in a Co/Pt magnetic metamaterial formed by triangle-shaped holes forming an antidot lattice and subjected to an external magnetic field applied perpendicularly to the metal film plane. We show that for a radiation wavelength substantially larger than the period of the antidots array, the radiation causes a polarization-independent spin-polarized ratchet current. The current is generated by the periodic asymmetric radiation intensity distribution caused by the near-field diffraction at the edges of the antidots, which induces spatially inhomogeneous periodic electron gas heating, and a phase-shifted periodic asymmetric electrostatic force. The developed microscopic theory shows that the magnetization of the Co/Pt film results in a spin ratchet current caused by both the anomalous Hall and the anomalous Nernst effects. Additionally, we observed a polarization-dependent trigonal spin photocurrent, which is caused by the scattering of electrons at the antidot boundaries resulting in a spin-polarized current due to the magnetization. Microscopic theory of these effects reveals that the trigonal photocurrent is generated at the boundaries of the triangle antidots, whereas the spin ratchet is generated due to the spatially periodic temperature gradient over the whole film. This difference causes substantially different hysteresis widths of these two currents.

    DOI： 10.1103/PhysRevB.107.155419

    Web of Science

    Scopus

  4. Investigation on Applying an InGaN Photocathode with Negative Electron Affinity for Electric Propulsion Reviewed

    INOUE Yusuke, NISHITANI Tomohiro, HONDA Anna, SATO Daiki, SHIKANO Haruka, KOIZUMI Atsushi, HONDA Yoshio, ICHIHARA Daisuke, SASOH Akihiro

    TRANSACTIONS OF THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES   Vol. 66 ( 1 ) page： 10 - 13   2023

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES  

    DOI： 10.2322/tjsass.66.10

    Web of Science

    Scopus

    CiNii Research

  5. Characterization of strain gauge with Co-AlO granular film and FeSiBNb amorphous film

    Uemura Taiki, Fujiwara Yuji, Jimbo Mutsuko, Honda Anna, Oshima Daiki, Kato Takeshi

    Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science   Vol. 2023 ( 0 ) page： 1P34   2023

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    Language：English   Publisher：The Japan Society of Vacuum and Surface Science  

    <p>Recently, various objects have become targets for sensing in order to realize an IoT society, and sensors are required higher sensitivity and miniaturization. In application of many automotive, aerospace, and industrial fields, there is a high need for compact sensors to measure mechanical quantities such as strain, stress. Strain gauge are intended to measure the magnitude and direction of the strain and the magnetostrictive effect in ferromagnetic films can be applied to strain detection. In this research, a GIG (Granular in Gap) structure [1] is used for a new strain gauge. It has a structure in which a granular film is sandwiched between soft magnetic yokes. When the strain is applied to the device, the change of strain is detected as a resistance change in the granular film. Co-AlO and amorphous(a)-FeSiBNb were employed as the granular film and the soft magnetic yoke of the strain gauge. The thickness of Co-AlO film and a-FeSiBNb yoke was 300 nm. The structure of the strain gauge is indicated in the inset of Figure 1. The gap length was estimated to be approximately 4 µm. An AC voltage at 80Hz supplied from a lock-in-amplifier (LIA) is applied to the series circuit of the gauge and a variable resistor. When the strain is applied to the gauge, the strain is detected as a voltage of the gauge by LIA. The MR ratio of the Co-AlO granular film before processing into a GIG element was about 6%. The magnetostriction constant of a-FeSiBNb yoke was 30.4ppm. A magnetic field of 5 Oe must be applied in direction of H⊥gap in order to align the magnetic moments of yokes. The granular film becomes a low resistance state due to a magnetic field appeared in the gap yielded by magnetic poles at the edge of yokes. When the strain is applied in direction of H//gap, the magnetic moments of yokes change its direction, increasing the resistance of granular film owing to the decrease of the magnetic field in the gap. The dependence of output voltage on the applied strain ε is shown in Fig.1. The blue circles are the result of increasing strain, and the red circles are the result of decreasing strain. The output voltage became large with increasing strain, and gradually almost constant because the magnetic moments of yokes saturated in direction of H//gap. This indicates that the strain up to about 6.0 × 10<sup>-5</sup> can be detected. The gauge factor estimated was approximately 50, larger than that of a typical metal strain gauge. Reference [1] N. Kobayashi et al., J. Magn. Magn. Mater. 188. 30 (1998).</p>

    DOI： 10.14886/jvss.2023.0_1p34

    CiNii Research

  6. AlGaAs/GaAs superlattice photocathode grown by molecular beam epitaxy: correspondence between room temperature photoluminescence and quantum efficiency Reviewed

    I. Morita, F. Ishikawa, A. Honda, D. Sato, A. Koizumi, T. Nishitani, M. Tabuchi

    Japanese Journal of Applied Physics   Vol. 60 ( SBBK02 ) page： 1 - 3   2021.1

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    Authorship：Corresponding author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.35848/1347-4065/abd6e0

  7. Optimization of InGaN thickness for high-quantum efficiency Cs/O activated InGaN photocathode Reviewed

    D. Sato, A. Honda, A. Koizumi, T. Nishitani, Y. Honda, and H. Amano

    Microelectronic Engineering   Vol. 223 ( 111229 ) page： 1 - 4   2020.2

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    Authorship：Corresponding author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： https://doi.org/10.1016/j.mee.2020.111229

  8. Development of anode-supported electrochemical cell based on proton-conductive Ba(Ce,Zr)O3 electrolyte Reviewed

    T. Yamaguchi, H. Shimada, U. (A.) Honda, H. Kishimoto, T. Ishiyama, K. Hamamoto, H. Sumi, T. Suzuki, Y. Fujishiro

    Solid State Ionics   Vol. 288   page： 34   2016.1

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1016/j.ssi.2015.12.007

  9. Development of electrochemical methanation reactor with co-electrolysis of humidified CO2 solid oxide electrolysis and reversible cells Reviewed

    T. Yamaguchi, H. Shimada, U. (A.) Honda, H. Kishimoto, T. Ishiyama, Y. Fujishiro

    ECS Transations   Vol. 68   page： 3459   2015.7

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    Language：English   Publishing type：Research paper (scientific journal)  

  10. As-grown deep-level defects in n-GaN growth by metal-organic chemical vapor deposition on freestanding GaN Reviewed

    S. Chen, U. (A.) Honda, T. Shibata, T. Matsumura, Y. Tokuda, K. Ishikawa, M. Hori, T. Uesugi, T. Kachi

    Journal of Applied Physics   Vol. 112   page： 053513   2012.9

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    Language：English  

    DOI： 10.1063/1.4748170

  11. Deep levels in n-GaN doped with carbon studied by deep level and minority carrier transient spectroscopies Reviewed

    U. (A.) Honda, Y. Yamada, Y. Tokuda, K. Shiojima

    Japanese Journal of Applied Physics   Vol. 51   page： 04DF04   2012.4

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    Authorship：Lead author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1143/JJAP.51.04DF04

  12. Raman spectroscopic study of residual strain in (1-101) GaN and (0001) GaN layers grown on Si substrate Reviewed

    T. Sugiura, E. Kim (A. Honda), Y. Honda, H. Takagi, T. Tsukamoto, H. Andoh, M. Yamaguchi, N. Sawaki

    AIP Conf. Proc.   Vol. 1399   page： 503   2011.12

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    Language：English  

    DOI： 10.1063/1.3666474

  13. Electrical properties of Metal-Insulator-Semiconductor capacitors on freestanding GaN substrates Reviewed

    E. Kim (A. Honda), N. Soejima, Y. Watanabe, M. Ishiko, T. Kachi

    Japanese Journal of Applied Physics   Vol. 49   page： 04DF08   2010.4

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    Authorship：Lead author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1143/JJAP.49.04DF08

  14. Energy relaxation processes of photo-generated carriers in Mg doped (0001)GaN and (1-101) GaN Reviewed

    J. Saida, E. Kim (A. Honda), T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    Physica Status Solidi (c)   Vol. 5   page： 1746   2008.5

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    Language：English   Publishing type：Research paper (international conference proceedings)  

    DOI： 10.1002/pssc.200778620

  15. Time-resolved photoluminescence spectroscopy in an undoped GaN (1-101) Reviewed Open Access

    E. Kim (A. Honda), T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    Physica Status Solidi (c)   Vol. 5   page： 367   2008.1

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    Language：English  

    DOI： 10.1002/pssc.200776532

  16. Time-resolved photoluminescence spectroscopy in a GaN/AlGaN SQW structure grown on a (111) Si substrate Reviewed

    E. Kim (A. Honda), T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

    Physica Status Solidi (c)   Vol. 4   page： 2838   2007.6

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    Authorship：Lead author   Language：English   Publishing type：Research paper (international conference proceedings)  

    DOI： 10.1002/pssc.200674899

  17. Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate Reviewed

    E. Kim (A. Honda), T. Hikosaka, T. Narita, Y. Honda, N. Sawaki

    Physica Status Solidi (c)   Vol. 3   page： 1992   2006.6

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    Authorship：Lead author   Language：English  

    DOI： 10.1002/pssc.200565290

  18. Optical spectra of GaN/InGaN MQW structure grown on a (1-101) GaN facet Reviewed

    E. Kim (A. Honda), T. Narita, Y. Honda, N. Sawaki

    Physica Status Solidi (c)   Vol. 1   page： 2512   2004.9

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    Authorship：Lead author   Language：English   Publishing type：Research paper (international conference proceedings)  

    DOI： 10.1002/pssc.200405039

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Presentations 40

  1. Scaling–Driven Control of Light–Induced Spin Currents in Magnetic Metamaterials

    G. Cavanna, H. Taketani, D. Pan, D. Oshima, A. Honda, T. Kato, M. Matsubara

    80th Annual Meeting of the Physical Society of Japan  2025.9.17 

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    Event date： 2025.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：Hiroshima University   Country：Japan  

  2. Nonreciprocal Transport in Metamaterials with Broken Time-Reversal and Space-Inversion Symmetry

    Yu Yamane, Mami Mizuno, Masaaki Shimozawa, Masakazu Matsubara, Anna Honda, Takeshi Kato, Koichi Izawa

    80th Annual Meeting of the Physical Society of Japan  2025.9.18 

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    Event date： 2025.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：Hiroshima University   Country：Japan  

  3. Evaluation of defects in highly carbon-doped GaN layers

    Momoko Inayoshi, Anna Honda, Hirotaka Watanabe, Yoshio Honda, Takeshi Kato, Noriyuki Taoka, Wakana Takeuchi

    The 86th Autumn Annual Meeting of the Japan Society of Applied Physics (JSAP)  2025.9.9 

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    Event date： 2025.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：Tenpaku campus, Meijo University  

  4. Defect characterization of carbon-doped GaN: effects of doping methods and concentrations

    Anna Honda

    The 10th IMaSS networking meeting  2025.9.3 

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    Event date： 2025.9

    Language：Japanese   Presentation type：Poster presentation  

  5. Electrical properties and optical deep level transient spectroscopy of GaN with different C doping concentrations International conference

    Momoko Inayoshi, Anna Honda, Hirotaka Watanabe, Noriyuki Taoka, Takeshi Kato, Yoshio Honda, Wakana Takeuchi

    15th International Conference on Nitride Semiconductors  2025.7.7 

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    Event date： 2025.7

    Language：English   Presentation type：Poster presentation  

    Venue：Malmö, Sweden  

  6. Scale-Driven Control of Photoinduced Spin Currents in Magnetic Metamaterials

    G. Cavanna, H. Taketani, Da Pan, A. Honda, T. Kato, M. Matsubara

    Topical Meeting on "New Developments in Asymmetric Quantum Materials: Toward Seamless Scaling of Multipoles" in the Transformative Research Area (A) "Visualization, Design, and Creation of Quantum Materials Enriched by Asymmetry"  2025.6 

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    Event date： 2025.6

    Presentation type：Poster presentation  

    Venue：Yamanashi Prefectural Library   Country：Japan  

  7. Size dependence of photocurrents in magnetic metamaterials with threefold rotational symmetry International conference

    G. Cavanna, H. Taketani, Da Pan, D. Oshima, A. Honda, T. Kato, M. Matsubara

    CRCGP-MSSP2024  2024.11 

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    Event date： 2024.11

    Language：English  

    Venue：Tohoku University  

  8. Optical and magnetic properties of GaN crystals varied C doping concentration International conference

    Anna Honda, Hirotaka Watanabe, Takeshi Kato, Yoshio Honda, Hiroshi Amano

    12th International workshop on nitride semiconductors  2024.11.4 

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    Event date： 2024.11

    Language：English   Presentation type：Poster presentation  

    Venue：Honolulu, Hawaii   Country：United States  

  9. Size dependence of photocurrents in magnetic metamaterials with threefold rotational symmetry

    Gabriele Cavanna, Takeuchi Hidehisa, Honda Anna, Kato Takeshi, Matsubara Masakazu

    ASYMMETRY: Unveiling, Design, and Development of Asymmetric Quantum Matters  2024.5.30 

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    Event date： 2024.5

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  10. Study of Carbon Behavior in Highly Carbon-doped GaN Crystal International conference

    Anna Honda, Hirotaka Watanabe, Wakana Takeuchi, Yoshio Honda, Hiroshi Amano, and Takeshi Kato

    International Conference on Materials and Systems for Sustainability 2023  2023.12.2 

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    Event date： 2023.12

    Language：English   Presentation type：Oral presentation (general)  

    Venue：Nagoya University   Country：Japan  

  11. Investigation of the Usefulness of Photocathodes for Electric Propulsion

    Inoue Yusuke, Nishitani Tomohiro, Shikano Haruka, Sato Daiki, Honda Anna, Koizumi Atsushi, Honda Yoshio, Ichihara Daisuke, Sasoh Akihiro

    Symposium on Space Transportation, FY2020  2021.1 

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    Event date： 2021.1

    Language：Japanese   Presentation type：Oral presentation (general)  

  12. Innovative inspection technology opened by photo electron beam from III-V semiconductors Invited

    Tomohiro Nishitani, Yoshio Honda, Masaaki Araidai, Hiroshi Amano, Masao Tabuchi, Akihiro Narita, Hidehiro Yasuda, Fumitaro Ishikawa, Takashi Meguro, Atsushi Koizumi, Daiki Sato, Anna Honda

    The Japan Society of Applied Physics (JSAP), 2nd–4th Joint Workshop on Extreme Nanofabrication and Structural Propertie  2020.10 

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    Event date： 2020.10

    Language：Japanese   Presentation type：Oral presentation (general)  

  13. Electron Beam Technology Innovation by Semiconductor Photocathodes and its Commercialization Invited

    Tomohiro Nishitani, Yoshio Honda, Masaaki Araidai, Hiroshi Amano, Masao Tabuchi, Akihiro Narita, Hidehiro Yasuda, Fumitaro Ishikawa, Takashi Meguro, Atsushi Koizumi, Daiki Sato, Anna Honda

    The 39th Electronic Materials Symposium  2020.10 

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    Event date： 2020.10

    Language：Japanese   Presentation type：Oral presentation (general)  

  14. Structural and electrical properties of Y- and Yb-doped Ba(CeZr)O3 proton conductor International conference

    U. (A.) Honda, T. Yamaguchi, Y. Fujishiro

    2014 Asian SOFC Symposium and Exhibition  2014.9 

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    Event date： 2014.9

    Language：English   Presentation type：Poster presentation  

  15. Development of Ba(Ce,Zr)O₃-Based Proton Conductors

    U. (A.) Honda, T. Yamaguchi, Y. Fujishiro

    2014 Annual Meeting of Ceramics  2014.3 

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    Event date： 2014.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：Keio University  

  16. Development of Ag/Nano-Ag Composite Paste Schottky Probes and C–V/I–V/DLTS Characterization of n-type 4H-SiC

    U. (A.) Honda, Y. Tokuda

    The 21st Workshop on SiC and Related Wide Bandgap Semiconductors  2012.11 

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    Event date： 2012.11

    Language：Japanese   Presentation type：Poster presentation  

  17. Evaluation of Electron Traps in p-GaN Grown by MOCVD

    U. (A.) Honda, Y. Tokuda, K.Shiojima

    The 73rd Japan Society of Applied Physics (JSAP) Spring Meeting  2012.9 

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    Event date： 2012.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：Ehime University  

  18. In-Plane Distribution of Hole Trap Concentration in n-GaN on Free-Standing GaN Substrates

    T. Matsumura, T. Maruyama, S. Yamaguchi, U. (A.) Honda, Y. Tokuda, H. Ueda, T. Narita, T. Uesugi, T. Kachi

    The 59th JSAP Spring Meeting  2012.3 

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    Event date： 2012.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：Waseda University  

  19. Development of Schottky Probes for C–V, I–V, and DLTS Characterization

    U. (A.) Honda, Y. Tokuda

    The 73rd JSAP Autumn Meeting  2012.9 

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    Event date： 2012.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：Ehime University  

  20. Evaluation of Traps in Polymer-Based Organic EL Devices by Current DLTS with a Square-Wave Weighting Function

    H. Naito, U. (A.) Honda, Y. Tokuda, T. Kato, M. Katayama

    The 73rd JSAP Autumn Meeting  2012.9 

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    Event date： 2012.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：Ehime University  

  21. Comparision of deep levels in n-GaN grown by MOCVD on sapphire substrates with LT-AlN and GaN buffer layers International conference

    U. (A.) Honda, T. Shibata, T. Matsumura, Y. Tokuda, H. Ueda, T. Narita, T. Uesugi, T. Kachi

    2012 International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials  2012.3 

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    Event date： 2012.3

    Language：English   Presentation type：Oral presentation (general)  

  22. Evaluation of In-Plane Trap Concentration Distribution in n-GaN on Free-Standing GaN Substrates

    S. Yamaguchi, T. Maruyama, T. Matsumura, U. (A.) Honda, Y. Tokuda, H. Ueda, T. Narita, T. Uesugi, T. Kachi

    The 20th Workshop on SiC and Related Wide Bandgap Semiconductors  2011.12 

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    Event date： 2011.12

    Language：Japanese   Presentation type：Poster presentation  

    Venue：WINC AICHI  

  23. Deep levels in n-GaN doped with carbon studied by deep level and minority carrier transient spectroscopies International conference

    U. (A.) Honda, Y. Yamada, Y. Tokuda, K. Shiojima

    International Conference on Solid State Devices and Materials  2011.9 

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    Event date： 2011.9

    Language：English   Presentation type：Oral presentation (general)  

  24. DLTS Evaluation of MOCVD n-GaN Grown on Low-Temperature AlN/GaN/Sapphire Substrates

    R. Shibata, U. (A.) Honda, Y. Tokuda, H. Ueda, T. Uesugi, T. Kachi

    The 72nd JSAP Autumn Meeting  2011.9 

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    Event date： 2011.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：Yamagata University  

  25. Impact of Schottky Electrode Fabrication Process on Electron Trap Evaluation in n-GaN

    T. Matsumura, S. Yamguchi, U. (A.) Honda, Y. Tokuda, H. Ueda, T. Uesugi, T. Kachi

    The 72nd JSAP Autumn Meeting  2011.9 

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    Event date： 2011.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：Yamagata University  

  26. Evaluation of Carbon-Related Deep Levels in n-GaN by Isothermal MCTS

    R. Shibata, U. (A.) Honda, Y. Tokuda, H. Ueda, T. Uesugi, T. Kachi

    The 72nd JSAP Autumn Meeting  2011.9 

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    Event date： 2011.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：Yamagata University  

  27. Electrical properties of Metal-Insulator-Semiconductor capacitors on freestanding GaN substrates International conference

    E. Kim (A. Honda), N. Soejima, Y. Watanabe, M. Ishiko, T. Kachi

    2009 International Conference on Solid State Devices and Materials  2009.10 

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    Event date： 2009.10

    Language：English   Presentation type：Oral presentation (general)  

    Venue：Sendai  

  28. Energy relaxation processes of photo-generated carriers in Mg doped (0001)GaN and (1-101) GaN International conference

    J. Saida, E. Kim (A. Honda), T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    7th International Conference on Nitride Semiconductors  2007.9 

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    Event date： 2007.9

    Language：English   Presentation type：Poster presentation  

    Venue：Las Vegas, USA  

  29. Time-Resolved Spectroscopy of (11-22) GaN

    E. Kim (A. Honda), T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    The 68th JSAP Autumn Meeting  2007.9 

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    Event date： 2007.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：Hokkaido Institute of Technology  

  30. Time-resolved photoluminescence spectroscopy in an undoped GaN (1-101) International conference

    E. Kim (A. Honda), T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    15th International Conference on Nonequlibrium Carrier Dynamics in Semiconductors  2007.7 

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    Event date： 2007.7

    Language：English  

    Venue：Tokyo, Japan  

  31. Time-resolved photoluminescence spectroscopy in a GaN/AlGaN SQW structure grown on a (111) Si substrate International conference

    E. Kim (A. Honda), T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

    4th International Workshop on Nitride Semiconductors  2006.10 

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    Event date： 2006.10

    Language：English   Presentation type：Poster presentation  

    Venue：Kyoto, Japan  

  32. Time-Resolved Spectroscopy of AlGaN/GaN Quantum Well Structures Grown on (111) Si Substrates

    E. Kim (A. Honda), T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

    The 67th JSAP Autumn Meeting  2006.8 

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    Event date： 2006.8

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：Ritsumeikan University  

  33. Time-Resolved Spectroscopy of GaN/AlGaN Multiple Quantum Well Structures on (1-101) GaN Facets

    E. Kim (A. Honda), T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    The 53th JSAP Spring Meeting  2006.3 

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    Event date： 2006.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：Tokyo City University  

  34. Optical spectra of (1-101)InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate Invited

    Y. Honda, E. Kim (A. Honda), T. Hikosaka, M. Yamaguchi, N. Sawaki

    5th Akasaki Research Center Symposium  2005.10 

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    Event date： 2005.10

    Language：English   Presentation type：Symposium, workshop panel (public)  

    Venue：Nagoya University  

  35. Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate International conference

    E. Kim (A. Honda), T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    6th International Conference on Nitride Semiconductor  2005.8 

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    Event date： 2005.8

    Language：English   Presentation type：Poster presentation  

    Venue：Bremen, Germany  

  36. Surface Flatness of (1-101) GaN/AlGaN Heterostructures on (001) Si 7°-Off Substrates

    T. Hikosaka, Y. Honda, E. Kim (A. Honda), M. Yamaguchi, N. Sawaki

    The 52th JSAP Spring Meeting  2005.3 

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    Event date： 2005.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：Saitama University  

  37. Optical Properties of GaN/InGaN Multiple Quantum Well Structures on (1-101) GaN Facets

    E. Kim (A. Honda), T. Hikosaka, T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

    The 52th JSAP Spring Meeting  2005.3 

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    Event date： 2005.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：Saitama University  

  38. Electrical and optical properties of (1-101)GaN grown on Si substrate Invited

    N. Sawaki, Y. Honda, N. Koide, T. Hikosaka, E. Kim (A. Honda), M. Yamaguchi

    4th Akasaki Research Center Symposium  2004.10 

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    Event date： 2004.10

    Language：English   Presentation type：Symposium, workshop panel (public)  

    Venue：Nagoya University  

  39. Optical Properties of GaN/InGaN Multiple Quantum Well Structures on (1-101) GaN Facets

    E. Kim (A. Honda), T. Narita, Y. Honda, N. Sawaki

    The 65th JSAP Autums Meeting  2004.9 

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    Event date： 2004.9

    Language：Japanese  

    Venue：Tohoku Gakuin University  

  40. Optical spectra of GaN/InGaN MQW structure grown on a (1-101) GaN facet International conference

    E. Kim (A. Honda), T. Narita, Y. Honda, N. Sawaki

    5th International Symposium on Blue Laser and Light Emitting Diodes  2004.3 

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    Event date： 2004.3

    Language：English   Presentation type：Oral presentation (general)  

    Venue：Kyungjoo, Korea  

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Research Project for Joint Research, Competitive Funding, etc. 3

  1. Differences in point defect behavior in GaN crystals induced by various impurity doping methods and elucidation of carrier transport mechanisms toward high-performance power device realization

    2025.8 - 2028.8

    Tatematsu Public Interest Foundation  Category A2: Special Research Grant 

    Honda Anna

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    Authorship：Principal investigator  Grant type：Competitive

    Grant amount：\3000000

  2. Crystal defect analysis for high quality GaN:C

    2024.7 - 2025.7

    Naito Science & Engineering Foundation  Research Grant 

    Honda Anna

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    Authorship：Principal investigator  Grant type：Competitive

    Grant amount：\1000000 （ Indirect Cost：\40000 ）

  3. Investigation of point defects in various impurities (C, Mg) doped GaN crystal and establishment of evaluation method

    2024.4 - 2026.3

    Research Foundation for the Electrotechnology of Chubu  Research Grant A2 

    Honda Anna

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    Authorship：Principal investigator  Grant type：Competitive

    Grant amount：\1720000

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Industrial property rights 1

  1. Mercury-free semiconductor evaluation method

    Anna Honda, Yutaka Tokuda

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    Applicant：Aichi Institute of Technology

    Date applied：2014

    Announcement no：特開2014-116510  Date announced：2014.6

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Social Contribution 2

  1. Student Research and Development under the SSH Program at Meiwa High School: Experimental Reproduction of Crow Structural Colors

    Role(s)：Organizing member

    2025.3

  2. Nagoya University Summer Technology Festival 2024: Experience the basics of semiconductor LSI fabrication technology in a clean room

    Role(s)：Organizing member

    2024.8

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Media Coverage 1

  1. Why do crow feathers change color? Newspaper, magazine

    Chunichi Shimbun  2025.4

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    Author：Other 

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