Updated on 2024/04/30

写真a

 
HONDA Anna
 
Organization
Institute of Materials and Systems for Sustainability Advanced Measurement Technology Center (AMTC) Designated assistant professor
Title
Designated assistant professor
Contact information
メールアドレス
External link

Degree 2

  1. Doctor of Engineering ( 2008.3   Nagoya University ) 

  2. Master of Engineering ( 2005.3   Nagoya University ) 

Research Interests 4

  1. Nano process

  2. III-V nitrides crystal defects

  3. Carrier dynamics

  4. Impurities behavior

Research Areas 3

  1. Nanotechnology/Materials / Thin film/surface and interfacial physical properties  / Thin layer, Surface/Interface properties

  2. Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment  / Electronic device, Power device

  3. Nanotechnology/Materials / Nanomaterials  / III-V nitride semiconductors

Current Research Project and SDGs 2

  1. Nano-fabrication of CoPt magnetic material

  2. Investigation of III-V semiconductor crystal defects and suggestion for analysis methods

Education 2

  1. Nagoya University   Graduate School of Engineering   Doctoral Course, Electrical Engineering and Computer Science

    2005.4 - 2008.3

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    Country: Japan

  2. Nagoya University   Graduate School of Engineering   Master Course, Electronic Engineering

    2003.4 - 2005.3

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    Country: Japan

Professional Memberships 1

  1. Japan Society of Applied Physics (JSAP)   Regular Member

    2003.4

Awards 3

  1. ARIM Outstanding Achievement Award

    2023.12   Advanced Research Infrastructure for Materials and Nanotechnology   Fabrication of non-spatially reversible symmetric magnetic materials and search for novel spin-optical functions

    Matsubara Masakazu, Honda Anna, Oshima Daiki, Kato Takeshi

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  2. Certificate of Engineer in Nanofabrication and Device Process

    2022.12   Advanced Research Infrastructure for Materials and Nanotechnology  

    Honda Anna

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    Country:Japan

  3. Second Place Award

    2014.8   SOFC Society of Japan   2014 Asian SOFC Symposium and Exhibition

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    Award type:Award from international society, conference, symposium, etc.  Country:Korea, Republic of

 

Papers 6

  1. Investigation of carbon-related complexes in highly C-doped GaN grown by metalorganic vapor phase epitaxy Reviewed

    Anna Honda, Hirotaka Watanabe, Wakana Takeuchi, Yoshio Honda, Hiroshi Amano, Takeshi Kato

    Japanese Journal of Applied Physics   Vol. 63 ( 4 ) page: 041005-1 - 041005-5   2024.4

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ad3b54

    DOI: 10.35848/1347-4065/ad3b54

    Other Link: https://iopscience.iop.org/article/10.35848/1347-4065/ad3b54

  2. Terahertz spin ratchet effect in magnetic metamaterials Reviewed International coauthorship

    Hild M., Golub L. E., Fuhrmann A., Otteneder M., Kronseder M., Matsubara M., Kobayashi T., Oshima D., Honda A., Kato T., Wunderlich J., Back C., Ganichev S. D.

    PHYSICAL REVIEW B   Vol. 107 ( 15 )   2023.4

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    Publishing type:Research paper (scientific journal)   Publisher:Physical Review B  

    We report on spin ratchet currents driven by terahertz radiation electric fields in a Co/Pt magnetic metamaterial formed by triangle-shaped holes forming an antidot lattice and subjected to an external magnetic field applied perpendicularly to the metal film plane. We show that for a radiation wavelength substantially larger than the period of the antidots array, the radiation causes a polarization-independent spin-polarized ratchet current. The current is generated by the periodic asymmetric radiation intensity distribution caused by the near-field diffraction at the edges of the antidots, which induces spatially inhomogeneous periodic electron gas heating, and a phase-shifted periodic asymmetric electrostatic force. The developed microscopic theory shows that the magnetization of the Co/Pt film results in a spin ratchet current caused by both the anomalous Hall and the anomalous Nernst effects. Additionally, we observed a polarization-dependent trigonal spin photocurrent, which is caused by the scattering of electrons at the antidot boundaries resulting in a spin-polarized current due to the magnetization. Microscopic theory of these effects reveals that the trigonal photocurrent is generated at the boundaries of the triangle antidots, whereas the spin ratchet is generated due to the spatially periodic temperature gradient over the whole film. This difference causes substantially different hysteresis widths of these two currents.

    DOI: 10.1103/PhysRevB.107.155419

    Web of Science

    Scopus

  3. Investigation on Applying an InGaN Photocathode with Negative Electron Affinity for Electric Propulsion Reviewed

    INOUE Yusuke, NISHITANI Tomohiro, HONDA Anna, SATO Daiki, SHIKANO Haruka, KOIZUMI Atsushi, HONDA Yoshio, ICHIHARA Daisuke, SASOH Akihiro

    TRANSACTIONS OF THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES   Vol. 66 ( 1 ) page: 10 - 13   2023

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES  

    DOI: 10.2322/tjsass.66.10

    Web of Science

    Scopus

    CiNii Research

  4. Characterization of strain gauge with Co-AlO granular film and FeSiBNb amorphous film

    Uemura Taiki, Fujiwara Yuji, Jimbo Mutsuko, Honda Anna, Oshima Daiki, Kato Takeshi

    Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science   Vol. 2023 ( 0 ) page: 1P34   2023

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    Language:English   Publisher:The Japan Society of Vacuum and Surface Science  

    <p>Recently, various objects have become targets for sensing in order to realize an IoT society, and sensors are required higher sensitivity and miniaturization. In application of many automotive, aerospace, and industrial fields, there is a high need for compact sensors to measure mechanical quantities such as strain, stress. Strain gauge are intended to measure the magnitude and direction of the strain and the magnetostrictive effect in ferromagnetic films can be applied to strain detection. In this research, a GIG (Granular in Gap) structure [1] is used for a new strain gauge. It has a structure in which a granular film is sandwiched between soft magnetic yokes. When the strain is applied to the device, the change of strain is detected as a resistance change in the granular film. Co-AlO and amorphous(a)-FeSiBNb were employed as the granular film and the soft magnetic yoke of the strain gauge. The thickness of Co-AlO film and a-FeSiBNb yoke was 300 nm. The structure of the strain gauge is indicated in the inset of Figure 1. The gap length was estimated to be approximately 4 µm. An AC voltage at 80Hz supplied from a lock-in-amplifier (LIA) is applied to the series circuit of the gauge and a variable resistor. When the strain is applied to the gauge, the strain is detected as a voltage of the gauge by LIA. The MR ratio of the Co-AlO granular film before processing into a GIG element was about 6%. The magnetostriction constant of a-FeSiBNb yoke was 30.4ppm. A magnetic field of 5 Oe must be applied in direction of H⊥gap in order to align the magnetic moments of yokes. The granular film becomes a low resistance state due to a magnetic field appeared in the gap yielded by magnetic poles at the edge of yokes. When the strain is applied in direction of H//gap, the magnetic moments of yokes change its direction, increasing the resistance of granular film owing to the decrease of the magnetic field in the gap. The dependence of output voltage on the applied strain ε is shown in Fig.1. The blue circles are the result of increasing strain, and the red circles are the result of decreasing strain. The output voltage became large with increasing strain, and gradually almost constant because the magnetic moments of yokes saturated in direction of H//gap. This indicates that the strain up to about 6.0 × 10<sup>-5</sup> can be detected. The gauge factor estimated was approximately 50, larger than that of a typical metal strain gauge. Reference [1] N. Kobayashi et al., J. Magn. Magn. Mater. 188. 30 (1998).</p>

    DOI: 10.14886/jvss.2023.0_1p34

    CiNii Research

  5. AlGaAs/GaAs superlattice photocathode grown by molecular beam epitaxy: correspondence between room temperature photoluminescence and quantum efficiency Reviewed

    I. Morita, F. Ishikawa, A. Honda, D. Sato, A. Koizumi, T. Nishitani, M. Tabuchi

    Japanese Journal of Applied Physics   Vol. 60 ( SBBK02 ) page: 1 - 3   2021.1

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/abd6e0

  6. Optimization of InGaN thickness for high-quantum efficiency Cs/O activated InGaN photocathode Reviewed

    D. Sato, A. Honda, A. Koizumi, T. Nishitani, Y. Honda, and H. Amano

    Microelectronic Engineering   Vol. 223 ( 111229 ) page: 1 - 4   2020.2

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1016/j.mee.2020.111229

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Presentations 1

  1. Study of Carbon Behavior in Highly Carbon-doped GaN Crystal International conference

    Anna Honda, Hirotaka Watanabe, Wakana Takeuchi, Yoshio Honda, Hiroshi Amano, and Takeshi Kato

    International Conference on Materials and Systems for Sustainability 2023  2023.12.2 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

Research Project for Joint Research, Competitive Funding, etc. 1

  1. Investigation of point defects in various impurities (C, Mg) doped GaN crystal and establishment of evaluation method

    2024.4 - 2026.3

    Research Foundation for the Electrotechnology of Chubu  Research Grant A2 

    Honda Anna

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    Authorship:Principal investigator  Grant type:Competitive

    Grant amount:\1720000

Industrial property rights 1

  1. Mercury-free semiconductor evaluation method

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    Application no:特開2014-116510  Date applied:2014