Organization
Center for Low-temperature Plasma Sciences (cLPS) Designated lecturer
Title
Designated lecturer
Contact information
Profile
Working on wide band gap semiconductors for power device applications
DHASIYAN Arun Kumar
Degree 1
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Ph.D Physics （ 2014.8 ）
Research Interests 5
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Nanomaterials for sensor applications
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Nanocomposites like TiO2/SiO2, TiO2/SnO2, etc for solar cell applications.
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Materials for solar energy conversion
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III-Oxide growth by MBE for power device applications
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III-V Nitride semiconductors for solar cell and HEMT device applications
Research History 4
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Nagoya University Center for Low-temperature Plasma Sciences (cLPS) Designated lecturer
2023.4
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Nagoya University Center for Low-temperature Plasma Sciences Researcher Researcher
2022.12 - 2023.3
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Nagoya University Venture Business Laboratory Researcher Post Doctoral Researcher
2020.12 - 2022.11
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Nagoya University Plasma Nanotechnology Research Center Researcher Post Doctoral Researcher
2016.6 - 2018.3
Papers 4
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Arun Kumar Dhasiyan, Frank Wilson Amalraj, Swathy Jayaprasad, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa & Masaru Hori
Scientific Reports Vol. 14 page： 10861 2024.5
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Gas-phase study of the behavior of trimethyl gallium and triethyl gallium by optical emission spectroscopy and quadrupole mass spectroscopy for the growth of GaN by REMOCVD (Radical-Enhanced Metalorganic Chemical Vapor Deposition) Reviewed
ARUN KUMAR DHASIYAN, Swathy Jayaprasad, Frank Wilson Amalraj, Naohiro SHIMIZU, Osamu Oda, Kenji Ishikawa and Masaru HORI
Japanese Journal of Applied Physics 2023.9
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Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition Reviewed
Yasuhiro Isobe, Takayuki Sakai, Naoharu Sugiyama, Ichiro Mizushima, Kyoichi Suguro, Naoto Miyashita, Yi Lu, Amalraj Frank Wilson, Dhasiyan Arun Kumar, Nobuyuki Ikarashi, Hiroki Kondo, Kenji Ishikawa, Naohiro Shimizu, Osamu Oda, Makoto Sekine, and Masaru Hori
Journal of Vacuum Science and Technology B Vol. 37 page： 031201 2019.4
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Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) Reviewed
Frank Wilson Amalraj, Arun Kumar Dhasiyan, Yi Lu, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, Nobuyuki Ikarashi, and Masaru Hori
AIP Advances Vol. 11 ( 8 ) page： 115116 2018.11
Presentations 1
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Thermal decomposition study of trimethyl gallium and triethyl gallium by quadrupole mass spectrometer for the growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) International conference
Dhasiyan Arun Kumar
16th Anniversary International Symposium on Advanced Plasma Sciences and its Applications for Nitrides and Nanomaterials (ISPLASMA – 2023), Aichi