Updated on 2023/09/28

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DHASIYAN Arun Kumar
 
Organization
Center for Low-temperature Plasma Sciences (cLPS) Designated lecturer
Title
Designated lecturer
Contact information
メールアドレス
Profile
 Working as a Designated Lecturer from April 2023 to Present at Centre for low temperature Plasma Sciences, Nagoya University, Nagoya city, Japan
 Worked as a Postdoctoral researcher from December 2022 to March 2023 at Centre for low temperature Plasma Sciences, Nagoya University, Nagoya city, Japan
 Worked as a Postdoctoral researcher from December 2020 to November 2022 at Venture Business Laboratory (VBL), Nagoya University, Nagoya city, Japan
 Worked as Assistant Professor - II from November 2019 to November 2020 in the Department of Physics, Bannari Amman Institute of Technology (Autonomous), Sathyamangalam, Tamil Nadu, India affiliated to Anna University, Chennai
 Worked as Assistant Professor - I from April 2018 to October 2019 in Department of Physics, Bannari Amman Institute of Technology (Autonomous), Sathyamangalam, Tamil Nadu, India affiliated to Anna University, Chennai
 Worked as a Postdoctoral researcher from June 2016 to March 2018 at Plasma Nanotechnology Research Center, Nagoya University, Nagoya city, Japan
 Worked as Assistant Professor - I from June 2015 to May 2016 in Department of Physics, Bannari Amman Institute of Technology (Autonomous), Sathyamangalam, Tamil Nadu, India affiliated to Anna University, Chennai
 Worked as Assistant Professor from October 2014 to May 2015 in the Department of Physics, Shri Andal Alagar College of Engineering, Mamandur, Tamil Nadu, India affiliated to Anna University, Chennai
 Worked as Scientific Assistant from May 2009 to December 2009 at Loyola Institute of Frontier Energy (LIFE), Loyola College, Chennai – 34.
 Qualified Tamil Nadu State Eligibility Test (SET - 2016) for Lectureship.

Degree 1

  1. Ph.D Physics （ 2014.8 ） 

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Research Interests 5

  1. Nanomaterials for sensor applications

  2. Nanocomposites like TiO2/SiO2, TiO2/SnO2, etc for solar cell applications.

  3. Materials for solar energy conversion

  4. III-Oxide growth by MBE for power device applications

  5. III-V Nitride semiconductors for solar cell and HEMT device applications

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Research History 4

  1. Nagoya University   Center for Low-temperature Plasma Sciences (cLPS)   Designated lecturer

    2023.4

  2. Nagoya University   Center for Low-temperature Plasma Sciences   Researcher   Researcher

    2022.12 - 2023.3

  3. Nagoya University   Venture Business Laboratory   Researcher   Post Doctoral Researcher

    2020.12 - 2022.11

  4. Nagoya University   Plasma Nanotechnology Research Center   Researcher   Post Doctoral Researcher

    2016.6 - 2018.3

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Papers 3

  1. Gas-phase study of the behavior of trimethyl gallium and triethyl gallium by optical emission spectroscopy and quadrupole mass spectroscopy for the growth of GaN by REMOCVD (Radical-Enhanced Metalorganic Chemical Vapor Deposition) Reviewed

    ARUN KUMAR DHASIYAN, Swathy Jayaprasad, Frank Wilson Amalraj, Naohiro SHIMIZU, Osamu Oda, Kenji Ishikawa and Masaru HORI

    Japanese Journal of Applied Physics     2023.9

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    Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.35848/1347-4065/acfd34

    DOI： 10.35848/1347-4065/acfd34

  2. Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition Reviewed

    Yasuhiro Isobe, Takayuki Sakai, Naoharu Sugiyama, Ichiro Mizushima, Kyoichi Suguro, Naoto Miyashita, Yi Lu, Amalraj Frank Wilson, Dhasiyan Arun Kumar, Nobuyuki Ikarashi, Hiroki Kondo, Kenji Ishikawa, Naohiro Shimizu, Osamu Oda, Makoto Sekine, and Masaru Hori

    Journal of Vacuum Science and Technology B   Vol. 37   page： 031201   2019.4

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： https://doi.org/10.1116/1.5083970

    DOI： 10.1116/1.5083970

  3. Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) Reviewed

    Frank Wilson Amalraj, Arun Kumar Dhasiyan, Yi Lu, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, Nobuyuki Ikarashi, and Masaru Hori

    AIP Advances   Vol. 11 ( 8 ) page： 115116   2018.11

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： https://doi.org/10.1063/1.5050819

    DOI： 10.1063/1.5050819

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Presentations 1

  1. Thermal decomposition study of trimethyl gallium and triethyl gallium by quadrupole mass spectrometer for the growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) International conference

    Dhasiyan Arun Kumar

    16th Anniversary International Symposium on Advanced Plasma Sciences and its Applications for Nitrides and Nanomaterials (ISPLASMA – 2023), Aichi  

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    Event date： 2023.3

    Presentation type：Oral presentation (general)  

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