2026/04/14 更新

写真a

ワン　ジャア
王　嘉
WANG Jia
所属
高等研究院 特任助教
未来材料・システム研究所 特任助教
職名
特任助教
連絡先
メールアドレス
外部リンク

学位 1

  1. ドクター・オブ・フィロソフィー （ 2021年9月   カリフォルニア大学ロサンゼルス校 ） 

学位の先頭へ▲

研究分野 1

  1. ものづくり技術（機械・電気電子・化学工学） / 電気電子材料工学  / semiconductor physics

研究分野の先頭へ▲

学歴 1

  1. カリフォルニア大学ロサンゼルス校   工学研究科   材料科学および材料工学

    2016年9月 - 2021年9月

    　 詳細を見る

    国名： アメリカ合衆国

学歴の先頭へ▲

受賞 1

  1. 赤崎賞

    2025年3月   国立大学法人東海国立大学機構  

    王嘉

    　詳細を見る

    受賞区分：国内外の国際的学術賞 

受賞の先頭へ▲
 

論文 25

  1. Observation of 2D-magnesium-intercalated gallium nitride superlattices 査読有り Open Access

    Jia Wang, Wentao Cai, Weifang Lu, Shun Lu, Emi Kano, Verdad C. Agulto, Biplab Sarkar, Hirotaka Watanabe, Nobuyuki Ikarashi, Toshiyuki Iwamoto, Makoto Nakajima, Yoshio Honda, Hiroshi Amano

    Nature   631 巻 ( 8019 ) 頁： 67 - 72   2024年6月

    　詳細を見る

    担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Springer Science and Business Media LLC  

    Abstract

    Since the demonstration of p-type gallium nitride (GaN) through doping with substitutional magnesium (Mg) atoms<sup>1,2</sup>, rapid and comprehensive developments, such as blue light-emitting diodes, have considerably shaped our modern lives and contributed to a more carbon-neutral society<sup>3–5</sup>. However, the details of the interplay between GaN and Mg have remained largely unknown<sup>6–11</sup>. Here we observe that Mg-intercalated GaN superlattices can form spontaneously by annealing a metallic Mg film on GaN at atmospheric pressure. To our knowledge, this marks the first instance of a two-dimensional metal intercalated into a bulk semiconductor, with each Mg monolayer being intricately inserted between several monolayers of hexagonal GaN. Characterized as an interstitial intercalation, this process induces substantial uniaxial compressive strain perpendicular to the interstitial layers. Consequently, the GaN layers in the Mg-intercalated GaN superlattices exhibit an exceptional elastic strain exceeding −10% (equivalent to a stress of more than 20 GPa), among the highest recorded for thin-film materials<sup>12</sup>. The strain alters the electronic band structure and greatly enhances hole transport along the compression direction. Furthermore, the Mg sheets induce a unique periodic transition in GaN polarity, generating polarization-field-induced net charges. These characteristics offer fresh insights into semiconductor doping and conductivity enhancement, as well as into elastic strain engineering of nanomaterials and metal–semiconductor superlattices<sup>13</sup>.

    DOI： 10.1038/s41586-024-07513-x

    Open Access

    Scopus

    researchmap

    その他リンク： https://www.nature.com/articles/s41586-024-07513-x

  2. Study of beryllium acceptor states in aluminum nitride via cathodoluminescence analysis 査読有り

    Yingying Lin, Jia Wang, Wentao Cai, Haitao Wang, Maki Kushimoto, Yoshio Honda, Hiroshi Amano

    Applied Physics Letters   128 巻 ( 3 )   2026年1月

    　詳細を見る

    担当区分：責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）  

    DOI： https://doi.org/10.1063/5.0301493

    その他リンク： https://pubs.aip.org/aip/apl/article/128/3/032106/3377876

  3. Unveiling the physics of excellent ohmic contact in Mg-intercalated p-GaN 査読有り 国際共著

    Haitao Wang, Jia Wang, Yingying Lin, Hei Wong, Hiroshi Amano

    Materials Today Physics   62 巻 ( 102062 )   2026年3月

    　詳細を見る

    担当区分：責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）  

    DOI： doi.org/10.1016/j.mtphys.2026.102062

  4. Red emission from InGaN active layer grown on nanoscale InGaN pseudosubstrates 招待有り 査読有り

    Wentao Cai, Jia Wang, Jeong-Hwan Park, Yuta Furusawa, Heajeong Cheong, Shugo Nitta, Yoshio Honda, Markus Pristovsek, Hiroshi Amano

    Japanese Journal of Applied Physics   62 巻 ( 2 ) 頁： 020902-1 - 020902-5   2023年2月

    　詳細を見る

    記述言語：英語   掲載種別：研究論文（学術雑誌）  

    DOI： 10.35848/1347-4065/acb74c

    その他リンク： https://iopscience.iop.org/article/10.35848/1347-4065/acb74c

  5. Ohmic Contact to p-Type GaN Enabled by Post-Growth Diffusion of Magnesium 査読有り Open Access

    Jia Wang, Shun Lu, Wentao Cai, Takeru Kumabe, Yuto Ando, Yaqiang Liao, Yoshio Honda, Ya-Hong Xie

    IEEE Electron Device Letters   43 巻 ( 1 ) 頁： 150 - 153   2021年11月

    　詳細を見る

    担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）  

    DOI： 10.1109/LED.2021.3131057

    Open Access

  6. High-Gain Gated Lateral Power Bipolar Junction Transistor 査読有り Open Access

    Jia Wang, Ya-Hong Xie, and Hiroshi Amano

    IEEE Electron Device Letters   42 巻 ( 9 ) 頁： 1370 - 1373   2021年7月

    　詳細を見る

    担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）  

    DOI： 10.1109/LED.2021.3099982

    その他リンク： https://ieeexplore.ieee.org/document/9495819

  7. Non-polar True-lateral GaN Power Diodes on Foreign Substrates 査読有り Open Access

    Jia Wang, Guo Yu, Hua Zong, Yaqiang Liao, Weifang Lu, Wentao Cai, Xiaodong Hu, Ya-Hong Xie, and Hiroshi Amano

    Applied Physics Letters   118 巻 ( 21 )   2021年5月

    　詳細を見る

    担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）  

    DOI： https://doi.org/10.1063/5.0051552

    Open Access

    その他リンク： https://pubs.aip.org/aip/apl/article/118/21/212102/40020/Non-polar-true-lateral-GaN-power-diodes-on-foreign

  8. A Schottky gate p-GaN fin-channel field effect transistor on very low-doped p-GaN films

    Fregolent M., Singh S., Lu S., Watanabe H., Wang J., De Santi C., Meneghesso G., Zanoni E., Meneghini M., Honda Y., Amano H., Sarkar B.

    Japanese Journal of Applied Physics Part 1 Regular Papers and Short Notes and Review Papers   64 巻 ( 12 )   2025年12月

    　詳細を見る

    出版者・発行元：Japanese Journal of Applied Physics Part 1 Regular Papers and Short Notes and Review Papers  

    In this paper, we report a trigate fin-channel FET on very low-doped p-GaN films. While achieving a good source/drain ohmic contact mandates high p-GaN doping; a good Schottky gate interface, in contrast, demands low doping. We show that selective thermal diffusion of Mg is effective in enabling a good source/drain ohmic contact, whereas a low-doped p-GaN film enables good Schottky contact formation. The reported p-GaN FET showed an ON-resistance of ∼43 kΩ.mm and an I <inf>on</inf>/I<inf>off</inf> ratio of ∼10<sup>6</sup>

    DOI： 10.35848/1347-4065/ae23d6

    Scopus

  9. (Ultra)wide bandgap semiconductor heterostructures for electronics cooling

    Cheng Z., Huang Z., Sun J., Wang J., Feng T., Ohnishi K., Liang J., Amano H., Huang R.

    Applied Physics Reviews   11 巻 ( 4 )   2024年12月

    　詳細を見る

    掲載種別：研究論文（学術雑誌）   出版者・発行元：Applied Physics Reviews  

    The evolution of power and radiofrequency electronics enters a new era with (ultra)wide bandgap semiconductors such as GaN, SiC, and β-Ga<inf>2</inf>O<inf>3</inf>, driving significant advancements across various technologies. The elevated breakdown voltage and minimal on-resistance result in size-compact and energy-efficient devices. However, effective thermal management poses a critical challenge, particularly when pushing devices to operate at their electronic limits for maximum output power. To address these thermal hurdles, comprehensive studies into thermal conduction within semiconductor heterostructures are essential. This review offers a comprehensive overview of recent progress in (ultra)wide bandgap semiconductor heterostructures dedicated to electronics cooling and are structured into four sections. Part 1 summarizes the material growth and thermal properties of (ultra)wide bandgap semiconductor heterostructures. Part 2 discusses heterogeneous integration techniques and thermal boundary conductance (TBC) of the bonded interfaces. Part 3 focuses on the research of TBC, including the progress in thermal characterization, experimental and theoretical enhancement, and the fundamental understanding of TBC. Parts 4 shifts the focus to electronic devices, presenting research on the cooling effects of these heterostructures through simulations and experiments. Finally, this review also identifies objectives, challenges, and potential avenues for future research. It aims to drive progress in electronics cooling through novel materials development, innovative integration techniques, new device designs, and advanced thermal characterization. Addressing these challenges and fostering continued progress hold the promise of realizing high-performance, high output power, and highly reliable electronics operating at the electronic limits.

    DOI： 10.1063/5.0185305

    Scopus

    researchmap

  10. Fabrication of a freestanding AlN substrate via HVPE homoepitaxy on a PVT-AlN substrate Open Access

    Liu T., Zhang Q., Li X., Chen M., Du C., Sun M., Wang J., Tan S., Zhang J.

    Semiconductor Science and Technology   39 巻 ( 1 )   2023年12月

    　詳細を見る

    掲載種別：研究論文（学術雑誌）   出版者・発行元：Semiconductor Science and Technology  

    Hydride vapor phase epitaxy (HVPE) is employed for the homoepitaxial development of AlN thick films on AlN substrates grown via physical vapor transport (PVT). A freestanding AlN substrate with a 200 μm thickness is then obtained by mechanically grinding away the PVT-AlN substrate. The as-grown HVPE AlN layer has a smooth surface with long parallel atomic steps. The freestanding HVPE-AlN substrate is crack-free and stress-free. In comparison to PVT-AlN substrate, HVPE-AlN substrate not only has better crystal quality but also substantially lower C, O, and Si impurity concentrations. The deep ultraviolet (DUV) transmittance of the 200 μm thick freestanding AlN substrate is as high as 66% at 265 nm. This performance aligns perfectly with the demands of AlGaN-based DUV optoelectronic devices.

    DOI： 10.1088/1361-6641/ad12df

    Open Access

    Scopus

    researchmap

  11. Impact of graphene state on the orientation of III–nitride 査読有り

    Jeong-Hwan Park, Nan Hu, Mun-Do Park, Jia Wang, Xu Yang, Dong-Seon Lee, Hiroshi Amano, Markus Pristovsek

    Applied Physics Letters   123 巻 ( 12 )   2023年9月

    　詳細を見る

    記述言語：英語   掲載種別：研究論文（学術雑誌）  

    DOI： https://doi.org/10.1063/5.0157588

    その他リンク： https://pubs.aip.org/aip/apl/article/123/12/121601/2911583

  12. Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic 査読有り

    Shun Lu, Manato Deki, Takeru Kumabe, Jia Wang, Kazuki Ohnishi, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    Applied Physics Letters   122 巻 ( 14 )   2023年4月

    　詳細を見る

    記述言語：英語   掲載種別：研究論文（学術雑誌）  

    DOI： https://doi.org/10.1063/5.0146080

    その他リンク： https://pubs.aip.org/aip/apl/article/122/14/142106/2882366

  13. Red emission from InGaN active layer grown on nanoscale InGaN pseudosubstrates 査読有り

    Wentao Cai, Jia Wang, Jeong-Hwan Park, Yuta Furusawa, Heajeong Cheong, Shugo Nitta, Yoshio Honda, Markus Pristovsek, Hiroshi Amano

    Japanese Journal of Applied Physics   62 巻 ( 2 )   2023年2月

    　詳細を見る

    記述言語：英語   掲載種別：研究論文（学術雑誌）  

    DOI： 10.35848/1347-4065/acb74c

    その他リンク： https://iopscience.iop.org/article/10.35848/1347-4065/acb74c

  14. High In content nitride sub-micrometer platelet arrays for long wavelength optical applications 査読有り

    Wentao Cai, Yuta Furusawa, Jia Wang, Jeong-Hwan Park, Yaqiang Liao, Hea-Jeong Cheong, Shugo Nitta, Yoshio Honda, Markus Pristovsek, Hiroshi Amano

    Applied Physics Letters   121 巻 ( 21 )   2022年11月

    　詳細を見る

    記述言語：英語   掲載種別：研究論文（学術雑誌）  

    DOI： https://doi.org/10.1063/5.0120723

    その他リンク： https://pubs.aip.org/aip/apl/article/121/21/211105/2834502/High-In-content-nitride-sub-micrometer-platelet

  15. High in content nitride sub-micrometer platelet arrays for long wavelength optical applications

    Cai W., Furusawa Y., Wang J., Park J.H., Liao Y., Cheong H.J., Nitta S., Honda Y., Pristovsek M., Amano H.

    Applied Physics Letters   121 巻 ( 21 )   2022年11月

    　詳細を見る

    掲載種別：研究論文（学術雑誌）   出版者・発行元：Applied Physics Letters  

    We demonstrate high, up to 30% In content InGaN sub-micrometer platelets on GaN by metalorganic vapor phase epitaxy. These InGaN platelets were selectively grown on flat GaN seeds formed in sub-micrometer-scale openings in a SiNx mask. The platelets were highly uniform without any dislocations or pits, with an atomically flat (0001) surface. The typical height was ∼120 nm, which significantly exceeded the normal critical layer thickness of a c-plane InGaN film. The strain state was comprehensively characterized by microbeam x-ray diffraction and transmission electron microscopy. Due to a gradual elastic relaxation of strain, the In content increased almost linearly from bottom to top because of the strong strain-dependent In incorporation. These platelets can serve as high-quality strain-relaxed templates for long wavelength micro-light-emitting diodes.

    DOI： 10.1063/5.0120723

    Scopus

    researchmap

  16. Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process 査読有り 国際共著 Open Access

    Yaqiang Liao, Tao Chen, Jia Wang, Yuto Ando, Wentao Cai, Xu Yang, Hirotaka Watanabe, Jun Hirotani, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Kevin Jing Chen, Hiroshi Amano

    Applied Physics Letters   120 巻 ( 12 )   2022年3月

    　詳細を見る

    記述言語：英語   掲載種別：研究論文（学術雑誌）  

    DOI： https://doi.org/10.1063/5.0083194

    Open Access

    その他リンク： https://pubs.aip.org/aip/apl/article/120/12/122109/2833272

  17. Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg 査読有り Open Access

    Shun Lu, Manato Deki, Jia Wang, Kazuki Ohnishi, Yuto Ando, Takeru Kumabe, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    Applied Physics Letters   119 巻 ( 24 )   2021年12月

    　詳細を見る

  18. Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach 査読有り

    Yaqiang Liao, Tao Chen, Jia Wang, Yuto Ando, Wentao Cai, Xu Yang, Hirotaka Watanabe, Jun Hirotani, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Kevin Jing Chen, Hiroshi Amano

    Japanese Journal of Applied Physics   60 巻   頁： 070903   2021年6月

    　詳細を見る

    記述言語：英語   掲載種別：研究論文（学術雑誌）  

    DOI： 10.35848/1347-4065/ac06b5

    その他リンク： https://iopscience.iop.org/article/10.35848/1347-4065/ac06b5/meta

  19. Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer 査読有り Open Access

    Ting Liu, Hirotaka Watanabe, Shugo Nitta, Jia Wang , Guohao Yu, Yuto Ando, Yoshio Honda, Hiroshi Amano, Atsushi Tanaka, Yasuo Koide

    Applied Physics Letters   118 巻 ( 7 )   2021年2月

    　詳細を見る

    記述言語：英語   掲載種別：研究論文（学術雑誌）  

    DOI： https://doi.org/10.1063/5.0034584

    Open Access

    その他リンク： https://pubs.aip.org/aip/apl/article/118/7/072103/39810/Suppression-of-the-regrowth-interface-leakage

  20. Insight into the Ga/In flux ratio and crystallographic plane dependence of MBE self-assembled growth of InGaN nanorods on patterned sapphire substrates 査読有り 国際誌

    Jian Shen, Yuefeng Yu, Jia Wang, Yulin Zheng, Yang Gan, and Guoqiang Li

    Nanoscale   12 巻 ( 6 ) 頁： 4018 - 4029   2020年1月

    　詳細を見る

    記述言語：英語   掲載種別：研究論文（学術雑誌）  

    DOI： 10.1039/C9NR09767H

    その他リンク： https://pubs.acs.org/doi/full/10.1021/acsami.6b07044#

  21. Effect of Mn addition on the precipitation and corrosion behaviour of 22% Cr economical duplex stainless steel after isothermal aging at 800° C 査読有り

    Zaiqiang Feng, Yinhui Yang, Jia Wang

    Journal of Alloys and Compounds   699 巻   頁： 334 - 344   2017年3月

    　詳細を見る

    記述言語：英語   掲載種別：研究論文（学術雑誌）  

    DOI： doi.org/10.1016/j.jallcom.2017.01.031

    その他リンク： https://www.sciencedirect.com/science/article/pii/S0925838817300427

  22. Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask 査読有り Open Access

    Qingbin Ji, Lei Li, Wei Zhang, Jia Wang , Peichi Liu, Yahong Xie, Tongxing Yan, Wei Yang, Weihua. Chen, Xiaodong Hu

    ACS Applied Materials & Interfaces   8 巻 ( 33 ) 頁： 21480 - 21489   2016年8月

    　詳細を見る

    記述言語：英語   掲載種別：研究論文（学術雑誌）  

    DOI： doi.org/10.1021/acsami.6b07044

    その他リンク： https://pubs.acs.org/doi/full/10.1021/acsami.6b07044#

  23. Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures 査読有り Open Access

    Duo Cao, Xinhong Cheng, Ya-Hong Xie, Li Zheng, Zhongjian Wang, Xinke Yu, Jia Wang, Dashen Shen, and Yuehui Yu

    RSC Advances   5 巻 ( 47 ) 頁： 37881 - 37886   2015年4月

    　詳細を見る

    記述言語：英語   掲載種別：研究論文（学術雑誌）  

    DOI： 10.1039/C5RA04728E

    その他リンク： https://pubs.rsc.org/en/content/articlehtml/2015/ra/c5ra04728e

  24. The influence of solution treatment temperature on microstructure and corrosion behavior of high temperature ageing in 25% Cr duplex stainless steel 査読有り

    Yinhui Yang, Biao Yan, Jia Wang, Junlin Yin

    Journal of Alloys and Compounds   509 巻 ( 36 ) 頁： 8870 - 8879   2011年9月

    　詳細を見る

    記述言語：英語   掲載種別：研究論文（学術雑誌）  

    DOI： https://doi.org/10.1016/j.jallcom.2011.06.099

    その他リンク： https://www.sciencedirect.com/science/article/pii/S0925838811014125

  25. The effect of large heat input on the microstructure and corrosion behaviour of simulated heat affected zone in 2205 duplex stainless steel 査読有り

    Yinhui Yang, Biao Yan, Jie Li, Jia Wang

    Corrosion Science   53 巻 ( 11 ) 頁： 3756 - 3763   2011年7月

    　詳細を見る

    記述言語：英語   掲載種別：研究論文（学術雑誌）  

    DOI： https://doi.org/10.1016/j.corsci.2011.07.022

    その他リンク： https://www.sciencedirect.com/science/article/pii/S0010938X11003891

▼全件表示

論文の先頭へ▲

講演・口頭発表等 2

  1. 3D GaN Power Switching Electronics: A Revival of Interest in ELO 招待有り 国際会議

    Jia Wang, Hiroshi Amano, Ya-Hong Xie

    2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)  2021年4月  IEEE

    　詳細を見る

    開催年月日： 2021年4月

    記述言語：英語   会議種別：口頭発表（招待・特別）  

    開催地：Chengdu, China  

    DOI： 10.1109/EDTM50988.2021.9420859

    その他リンク： https://ieeexplore.ieee.org/document/9420859

  2. Annealing of Mg Nanodot Arrays on GaN for p-type Ohmic Contact 国際会議

    Jia Wang, Wentao Cai, Shun Lu, Yoshio Honda, Hiroshi Amano

    2022 International Workshop of Nitride Semiconductors (IWN)  2022年10月 

    　詳細を見る

    開催年月日： 2022年10月

    記述言語：英語   会議種別：口頭発表（一般）  

    開催地：Berlin, Germany  

講演・口頭発表等の先頭へ▲