Updated on 2023/09/29
Doctor of Philosophy （ 2021.9 University of California, Los Angeles ）
Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials / semiconductor physics
University of California, Los Angeles Graduate School of Engineering Materials Science and Engineering
2016.9 - 2021.9
Country： United States
Red emission from InGaN active layer grown on nanoscale InGaN pseudosubstrates Invited Reviewed
Wentao Cai, Jia Wang, Jeong-Hwan Park, Yuta Furusawa, Heajeong Cheong, Shugo Nitta, Yoshio Honda, Markus Pristovsek, Hiroshi Amano
Japanese Journal of Applied Physics Vol. 62 ( 2 ) page： 020902-1 - 020902-5 2023.2
Ohmic Contact to p-Type GaN Enabled by Post-Growth Diffusion of Magnesium Reviewed
Jia Wang, Shun Lu, Wentao Cai, Takeru Kumabe, Yuto Ando, Yaqiang Liao, Yoshio Honda, Ya-Hong Xie
IEEE Electron Device Letters Vol. 43 ( 1 ) page： 150 - 153 2021.11
High-Gain Gated Lateral Power Bipolar Junction Transistor Reviewed
Jia Wang, Ya-Hong Xie, and Hiroshi Amano
IEEE Electron Device Letters Vol. 42 ( 9 ) page： 1370 - 1373 2021.7
Non-polar True-lateral GaN Power Diodes on Foreign Substrates Reviewed
Jia Wang, Guo Yu, Hua Zong, Yaqiang Liao, Weifang Lu, Wentao Cai, Xiaodong Hu, Ya-Hong Xie, and Hiroshi Amano
Applied Physics Letters Vol. 118 ( 21 ) 2021.5
The effect of large heat input on the microstructure and corrosion behaviour of simulated heat affected zone in 2205 duplex stainless steel Reviewed
Yinhui Yang, Biao Yan, Jie Li, Jia Wang
Corrosion Science Vol. 53 ( 11 ) page： 3756 - 3763 2011.7
Impact of graphene state on the orientation of III–nitride Reviewed
Jeong-Hwan Park, Nan Hu, Mun-Do Park, Jia Wang, Xu Yang, Dong-Seon Lee, Hiroshi Amano, Markus Pristovsek
Applied Physics Letters Vol. 123 ( 12 ) 2023.9
Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic Reviewed
Shun Lu, Manato Deki, Takeru Kumabe, Jia Wang, Kazuki Ohnishi, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano
Applied Physics Letters Vol. 122 ( 14 ) 2023.4
Red emission from InGaN active layer grown on nanoscale InGaN pseudosubstrates Reviewed
Wentao Cai, Jia Wang, Jeong-Hwan Park, Yuta Furusawa, Heajeong Cheong, Shugo Nitta, Yoshio Honda, Markus Pristovsek, Hiroshi Amano
Japanese Journal of Applied Physics Vol. 62 ( 2 ) 2023.2
High In content nitride sub-micrometer platelet arrays for long wavelength optical applications Reviewed
Wentao Cai, Yuta Furusawa, Jia Wang, Jeong-Hwan Park, Yaqiang Liao, Hea-Jeong Cheong, Shugo Nitta, Yoshio Honda, Markus Pristovsek, Hiroshi Amano
Applied Physics Letters Vol. 121 ( 21 ) 2022.11
Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process Reviewed International coauthorship
Yaqiang Liao, Tao Chen, Jia Wang, Yuto Ando, Wentao Cai, Xu Yang, Hirotaka Watanabe, Jun Hirotani, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Kevin Jing Chen, Hiroshi Amano
Applied Physics Letters Vol. 120 ( 12 ) 2022.3
Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg Reviewed
Shun Lu, Manato Deki, Jia Wang, Kazuki Ohnishi, Yuto Ando, Takeru Kumabe, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano
Applied Physics Letters Vol. 119 ( 24 ) 2021.12
Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach Reviewed
Yaqiang Liao, Tao Chen, Jia Wang, Yuto Ando, Wentao Cai, Xu Yang, Hirotaka Watanabe, Jun Hirotani, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Kevin Jing Chen, Hiroshi Amano
Japanese Journal of Applied Physics Vol. 60 page： 070903 2021.6
Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer Reviewed
Ting Liu, Hirotaka Watanabe, Shugo Nitta, Jia Wang , Guohao Yu, Yuto Ando, Yoshio Honda, Hiroshi Amano, Atsushi Tanaka, Yasuo Koide
Applied Physics Letters Vol. 118 ( 7 ) 2021.2
Insight into the Ga/In flux ratio and crystallographic plane dependence of MBE self-assembled growth of InGaN nanorods on patterned sapphire substrates Reviewed International journal
Jian Shen, Yuefeng Yu, Jia Wang, Yulin Zheng, Yang Gan, and Guoqiang Li
Nanoscale Vol. 12 ( 6 ) page： 4018 - 4029 2020.1
Effect of Mn addition on the precipitation and corrosion behaviour of 22% Cr economical duplex stainless steel after isothermal aging at 800° C Reviewed
Zaiqiang Feng, Yinhui Yang, Jia Wang
Journal of Alloys and Compounds Vol. 699 page： 334 - 344 2017.3
Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask Reviewed
Qingbin Ji, Lei Li, Wei Zhang, Jia Wang , Peichi Liu, Yahong Xie, Tongxing Yan, Wei Yang, Weihua. Chen, Xiaodong Hu
ACS Applied Materials & Interfaces Vol. 8 ( 33 ) page： 21480 - 21489 2016.8
Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures Reviewed
Duo Cao, Xinhong Cheng, Ya-Hong Xie, Li Zheng, Zhongjian Wang, Xinke Yu, Jia Wang, Dashen Shen, and Yuehui Yu
RSC Advances Vol. 5 ( 47 ) page： 37881 - 37886 2015.4
The influence of solution treatment temperature on microstructure and corrosion behavior of high temperature ageing in 25% Cr duplex stainless steel Reviewed
Yinhui Yang, Biao Yan, Jia Wang, Junlin Yin
Journal of Alloys and Compounds Vol. 509 ( 36 ) page： 8870 - 8879 2011.9
3D GaN Power Switching Electronics: A Revival of Interest in ELO Invited International conference
Jia Wang, Hiroshi Amano, Ya-Hong Xie
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 2021.4 IEEE
Annealing of Mg Nanodot Arrays on GaN for p-type Ohmic Contact International conference
Jia Wang, Wentao Cai, Shun Lu, Yoshio Honda, Hiroshi Amano
2022 International Workshop of Nitride Semiconductors (IWN) 2022.10
