記述言語：英語   出版者・発行元：一般社団法人 電子情報通信学会  

DOI： 10.1587/elex.23.20250743

Open Access

Web of Science

CiNii Research

記述言語：英語   出版者・発行元：一般社団法人 電子情報通信学会  

This paper describes a theoretical method to estimate the current imbalance based on the resistance matrix in a multichip power module. It is derived that the current through each device can be calculated based on the terminal voltage, the resistance matrix of the module, and the on-resistance of each device. The resistance matrix of the module can be easily obtained using parasitic extraction simulation tools. By using circuit simulations for 4-, 6-, and 12-parallel module structures, it is confirmed that the proposed method can accurately estimate the current imbalance.

DOI： 10.1587/elex.22.20250509

Open Access

Web of Science

Scopus

CiNii Research

出版者・発行元：Pcim Europe Conference Proceedings  

Parallel placement and current imbalance are widely discussed in the application of GaN devices to high-power inverters. This paper describes a circuit layout that reduces the parasitic component of the printed circuit board by mounting GaN devices in 12 parallel in a three-phase inverter circuit. The current imbalance in the multi-pulse test is less than 20% at 600 A current output.

DOI： 10.30420/566262019

Scopus

記述言語：英語   出版者・発行元：一般社団法人 電気学会  

GaN power devices improve the performance in power conversion circuits. Since the current rating of the GaN devices is still small, many devices must be connected in parallel to create a large-current power module. Device cooling and low stray inductance are the major challenges in designing a high-power half-bridge circuit with multi-parallel GaN devices. In order to overcome these challenges, we propose an inverter circuit structure with 12 parallel GaN devices capable of double-sided cooling and a well-balanced stray inductance. Such a system is applicable to electric vehicle design.

DOI： 10.1541/ieejjia.22007958

Open Access

Scopus

CiNii Research

出版者・発行元：2022 International Power Electronics Conference IPEC Himeji 2022 Ecce Asia  

GaN power devices improve the performance in power conversion circuits. Since the current rating of the GaN devices is still small, many devices must be connected in parallel to create a high-current power module. In designing the layout of the half-bridge circuit with multi-paralleled GaN devices, the device cooling and low stray inductance are the major challenge for the high-power half-bridge circuit. We propose an inverter circuit structure with 12 parallel GaN devices focusing on the double-sided cooling and the well-balanced stray inductance for the application to electric vehicles.

DOI： 10.23919/IPEC-Himeji2022-ECCE53331.2022.9806956

Scopus

担当区分：筆頭著者   記述言語：英語   掲載種別：研究発表ペーパー・要旨（国際会議）  

担当区分：筆頭著者   記述言語：日本語   掲載種別：研究発表ペーパー・要旨（全国大会，その他学術会議）  

担当区分：筆頭著者   記述言語：英語   掲載種別：研究発表ペーパー・要旨（国際会議）  

担当区分：筆頭著者   記述言語：英語   掲載種別：研究発表ペーパー・要旨（国際会議）  

担当区分：筆頭著者