所属
未来材料・システム研究所 附属未来エレクトロニクス集積研究センター 特任助教
職名
特任助教
リュウ シン
LIU Xin
LIU Xin
学位 1
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工学博士 （ 2012年6月 西安交通大学 ）
研究キーワード 1
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結晶成長 シミュレーション
経歴 1
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九州大学 応用力学研究所 研究員
2012年10月 - 2020年3月
国名：日本国
論文 27
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Koichi Kakimoto, Xin Liu, Satoshi Nakano
頁： 2100092 2021年9月
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Numerical Analysis of Phosphorus Concentration Distribution in a Silicon Crystal during Directional Solidification Process 招待有り 査読有り
Satoshi Nakano, Xin Liu, Xue-feng Han, Koichi Kakimoto
Crystals 11 巻 ( 1 ) 頁： 27 - 36 2020年12月
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Numerical analysis of dopant concentration in 200 mm (8 inch) floating zone silicon
Han Xue-Feng, Liu Xin, Nakano Satoshi, Kakimoto Koichi
JOURNAL OF CRYSTAL GROWTH 545 巻 2020年9月
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3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth
Han Xue-Feng, Liu Xin, Nakano Satoshi, Harada Hirofumi, Miyamura Yoshiji, Kakimoto Koichi
JOURNAL OF CRYSTAL GROWTH 532 巻 2020年2月
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Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon
Liu Xin, Harada Hirofumi, Miyamura Yoshiji, Han Xue-feng, Nakano Satoshi, Nishizawa Shin-ichi, Kakimoto Koichi
JOURNAL OF CRYSTAL GROWTH 532 巻 2020年2月
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Transient global modeling for the pulling process of Czochralski silicon crystal growth. I. Principles, formulation, and implementation of the model
Liu Xin, Harada Hirofumi, Miyamura Yoshiji, Han Xue-feng, Nakano Satoshi, Nishizawa Shin-ichi, Kakimoto Koichi
JOURNAL OF CRYSTAL GROWTH 532 巻 2020年2月
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3D Numerical Analysis of the Asymmetric Three-Phase Line of Floating Zone for Silicon Crystal Growth
Han Xue-Feng, Liu Xin, Nakano Satoshi, Harada Hirofumi, Miyamura Yoshiji, Kakimoto Koichi
CRYSTALS 10 巻 ( 2 ) 2020年2月
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In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals
Miyamura Y., Harada H., Liu X., Nakano S., Nishizawa S., Kakimoto K.
JOURNAL OF CRYSTAL GROWTH 507 巻 頁： 154 - 156 2019年2月
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Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth
Liu Xin, Harada Hirofumi, Miyamura Yoshiji, Han Xue-feng, Nakano Satoshi, Nishizawa Shin-ichi, Kakimoto Koichi
JOURNAL OF CRYSTAL GROWTH 499 巻 頁： 8 - 12 2018年10月
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3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth
Han Xue-Feng, Liu Xin, Nakano Satoshi, Harada Hirofumi, Miyamura Yoshiji, Kakimoto Koichi
CRYSTAL RESEARCH AND TECHNOLOGY 53 巻 ( 5 ) 2018年5月
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3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon
Han Xue-Feng, Liu Xin, Nakano Satoshi, Harada Hirofumi, Miyamura Yoshiji, Kakimoto Koichi
JOURNAL OF CRYSTAL GROWTH 483 巻 頁： 269 - 274 2018年2月
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Effect of controlled crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth
Liu Xin, Han Xue-Feng, Nakano Satoshi, Kakimoto Koichi
JOURNAL OF CRYSTAL GROWTH 483 巻 頁： 241 - 244 2018年2月
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Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth
Liu Xin, Gao Bing, Nakano Satoshi, Kakimoto Koichi
JOURNAL OF CRYSTAL GROWTH 474 巻 頁： 3 - 7 2017年9月
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Effect of the packing structure of silicon chunks on the melting process and carbon reduction in Czochralski silicon crystal growth
Liu Xin, Nakano Satoshi, Kakimoto Koichi
JOURNAL OF CRYSTAL GROWTH 468 巻 頁： 595 - 600 2017年6月
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Development of carbon transport and modeling in Czochralski silicon crystal growth
Liu Xin, Nakano Satoshi, Kakimoto Koichi
CRYSTAL RESEARCH AND TECHNOLOGY 52 巻 ( 1 ) 2017年1月
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Growth of semiconductor silicon crystals
Kakimoto Koichi, Gao Bing, Liu Xin, Nakano Satoshi
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS 62 巻 ( 2 ) 頁： 273 - 285 2016年6月
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Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth
Liu Xin, Gao Bing, Nakano Satoshi, Kakimoto Koichi
CRYSTAL RESEARCH AND TECHNOLOGY 50 巻 ( 6 ) 頁： 458 - 463 2015年6月
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Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth
Liu Xin, Gao Bing, Kakimoto Koichi
JOURNAL OF CRYSTAL GROWTH 417 巻 頁： 58 - 64 2015年5月
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Heat transfer in an industrial directional solidification furnace with multi-heaters for silicon ingots
Li Zaoyang, Liu Lijun, Liu Xin, Zhang Yunfeng, Xiong Jingfeng
JOURNAL OF CRYSTAL GROWTH 385 巻 頁： 9 - 15 2014年1月
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Effects of argon flow on melt convection and interface shape in a directional solidification process for an industrial-size solar silicon ingot
Li Zaoyang, Liu Lijun, Liu Xin, Zhang Yunfeng, Xiong Jingfeng
JOURNAL OF CRYSTAL GROWTH 360 巻 頁： 87 - 91 2012年12月
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Effects of static magnetic fields on thermal fluctuations in the melt of industrial CZ-Si crystal growth
Liu Xin, Liu Lijun, Li Zaoyang, Wang Yuan
JOURNAL OF CRYSTAL GROWTH 360 巻 頁： 38 - 42 2012年12月
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Effects of cusp-shaped magnetic field on melt convection and oxygen transport in an industrial CZ-Si crystal growth
Liu Xin, Liu Lijun, Li Zaoyang, Wang Yuan
JOURNAL OF CRYSTAL GROWTH 354 巻 ( 1 ) 頁： 101 - 108 2012年9月
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Large-eddy simulation of melt turbulence in a 300-mm Cz-Si crystal growth
Liu Lijun, Liu Xin, Wang Yuan
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER 55 巻 ( 1-3 ) 頁： 53 - 60 2012年1月
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CONTROL OF OXYGEN TRANSPORT IN THE MELT OF A CZOCHRALSKI-SILICON CRYSTAL GROWTH
Wang Hao, Liu Lijun, Liu Xin, Li Zaoyang
JOURNAL OF ENHANCED HEAT TRANSFER 19 巻 ( 6 ) 頁： 505 - 514 2012年
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Effects of Transverse Magnetic Field on Thermal Fluctuations in the Melt of a Cz-Si Crystal Growth
Liu Xin, Liu Lijun, Wang Yuan
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011) 34 巻 ( 1 ) 頁： 1123 - 1128 2011年
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Modeling of the 3D Unsteady Melt Flow in an Industrial-Scale Cz-Si Crystal Growth Using LES Method
Liu Xin, Liu Lijun, Wang Yuan, Kakimoto Koichi
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010) 27 巻 ( 1 ) 頁： 1035 - 1039 2010年
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Modeling and simulation of Si crystal growth from melt 査読有り 国際共著
Lijun Liu, Hiroaki Miyazawa, Satoshi Nakano, Xin Liu, Zaoyang Li, Koichi Kakimoto
Phys. Status Solidi C 6 巻 ( 3 ) 頁： 645 - 652 2009年1月