Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Designated assistant professor
Title
Designated assistant professor
LIU Xin
Degree 1
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Doctor of Engineering （ 2012.6 Xi'an Jiaotong University ）
Research Interests 1
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Crystal growth Modeling
Research History 1
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Kyushu University Research Institute for Applied Mechanics Researcher
2012.10 - 2020.3
Country：Japan
Papers 27
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Analysis of the Effect of Cusp-Shaped Magnetic Fields on Heat, Mass, and Oxygen Transfer Using a Coupled 2D/3D Global Model Invited Reviewed
Koichi Kakimoto, Xin Liu, Satoshi Nakano
page： 2100092 2021.9
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Numerical Analysis of Phosphorus Concentration Distribution in a Silicon Crystal during Directional Solidification Process Invited Reviewed
Satoshi Nakano, Xin Liu, Xue-feng Han, Koichi Kakimoto
Crystals Vol. 11 ( 1 ) page： 27 - 36 2020.12
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Numerical analysis of dopant concentration in 200 mm (8 inch) floating zone silicon
Han Xue-Feng, Liu Xin, Nakano Satoshi, Kakimoto Koichi
JOURNAL OF CRYSTAL GROWTH Vol. 545 2020.9
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3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth
Han Xue-Feng, Liu Xin, Nakano Satoshi, Harada Hirofumi, Miyamura Yoshiji, Kakimoto Koichi
JOURNAL OF CRYSTAL GROWTH Vol. 532 2020.2
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Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon
Liu Xin, Harada Hirofumi, Miyamura Yoshiji, Han Xue-feng, Nakano Satoshi, Nishizawa Shin-ichi, Kakimoto Koichi
JOURNAL OF CRYSTAL GROWTH Vol. 532 2020.2
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Transient global modeling for the pulling process of Czochralski silicon crystal growth. I. Principles, formulation, and implementation of the model
Liu Xin, Harada Hirofumi, Miyamura Yoshiji, Han Xue-feng, Nakano Satoshi, Nishizawa Shin-ichi, Kakimoto Koichi
JOURNAL OF CRYSTAL GROWTH Vol. 532 2020.2
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3D Numerical Analysis of the Asymmetric Three-Phase Line of Floating Zone for Silicon Crystal Growth
Han Xue-Feng, Liu Xin, Nakano Satoshi, Harada Hirofumi, Miyamura Yoshiji, Kakimoto Koichi
CRYSTALS Vol. 10 ( 2 ) 2020.2
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In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals
Miyamura Y., Harada H., Liu X., Nakano S., Nishizawa S., Kakimoto K.
JOURNAL OF CRYSTAL GROWTH Vol. 507 page： 154 - 156 2019.2
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Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth
Liu Xin, Harada Hirofumi, Miyamura Yoshiji, Han Xue-feng, Nakano Satoshi, Nishizawa Shin-ichi, Kakimoto Koichi
JOURNAL OF CRYSTAL GROWTH Vol. 499 page： 8 - 12 2018.10
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3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth
Han Xue-Feng, Liu Xin, Nakano Satoshi, Harada Hirofumi, Miyamura Yoshiji, Kakimoto Koichi
CRYSTAL RESEARCH AND TECHNOLOGY Vol. 53 ( 5 ) 2018.5
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3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon
Han Xue-Feng, Liu Xin, Nakano Satoshi, Harada Hirofumi, Miyamura Yoshiji, Kakimoto Koichi
JOURNAL OF CRYSTAL GROWTH Vol. 483 page： 269 - 274 2018.2
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Effect of controlled crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth
Liu Xin, Han Xue-Feng, Nakano Satoshi, Kakimoto Koichi
JOURNAL OF CRYSTAL GROWTH Vol. 483 page： 241 - 244 2018.2
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Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth
Liu Xin, Gao Bing, Nakano Satoshi, Kakimoto Koichi
JOURNAL OF CRYSTAL GROWTH Vol. 474 page： 3 - 7 2017.9
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Effect of the packing structure of silicon chunks on the melting process and carbon reduction in Czochralski silicon crystal growth
Liu Xin, Nakano Satoshi, Kakimoto Koichi
JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 595 - 600 2017.6
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Development of carbon transport and modeling in Czochralski silicon crystal growth
Liu Xin, Nakano Satoshi, Kakimoto Koichi
CRYSTAL RESEARCH AND TECHNOLOGY Vol. 52 ( 1 ) 2017.1
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Growth of semiconductor silicon crystals
Kakimoto Koichi, Gao Bing, Liu Xin, Nakano Satoshi
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS Vol. 62 ( 2 ) page： 273 - 285 2016.6
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Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth
Liu Xin, Gao Bing, Nakano Satoshi, Kakimoto Koichi
CRYSTAL RESEARCH AND TECHNOLOGY Vol. 50 ( 6 ) page： 458 - 463 2015.6
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Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth
Liu Xin, Gao Bing, Kakimoto Koichi
JOURNAL OF CRYSTAL GROWTH Vol. 417 page： 58 - 64 2015.5
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Heat transfer in an industrial directional solidification furnace with multi-heaters for silicon ingots
Li Zaoyang, Liu Lijun, Liu Xin, Zhang Yunfeng, Xiong Jingfeng
JOURNAL OF CRYSTAL GROWTH Vol. 385 page： 9 - 15 2014.1
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Effects of argon flow on melt convection and interface shape in a directional solidification process for an industrial-size solar silicon ingot
Li Zaoyang, Liu Lijun, Liu Xin, Zhang Yunfeng, Xiong Jingfeng
JOURNAL OF CRYSTAL GROWTH Vol. 360 page： 87 - 91 2012.12
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Effects of static magnetic fields on thermal fluctuations in the melt of industrial CZ-Si crystal growth
Liu Xin, Liu Lijun, Li Zaoyang, Wang Yuan
JOURNAL OF CRYSTAL GROWTH Vol. 360 page： 38 - 42 2012.12
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Effects of cusp-shaped magnetic field on melt convection and oxygen transport in an industrial CZ-Si crystal growth
Liu Xin, Liu Lijun, Li Zaoyang, Wang Yuan
JOURNAL OF CRYSTAL GROWTH Vol. 354 ( 1 ) page： 101 - 108 2012.9
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Large-eddy simulation of melt turbulence in a 300-mm Cz-Si crystal growth
Liu Lijun, Liu Xin, Wang Yuan
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER Vol. 55 ( 1-3 ) page： 53 - 60 2012.1
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CONTROL OF OXYGEN TRANSPORT IN THE MELT OF A CZOCHRALSKI-SILICON CRYSTAL GROWTH
Wang Hao, Liu Lijun, Liu Xin, Li Zaoyang
JOURNAL OF ENHANCED HEAT TRANSFER Vol. 19 ( 6 ) page： 505 - 514 2012
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Effects of Transverse Magnetic Field on Thermal Fluctuations in the Melt of a Cz-Si Crystal Growth
Liu Xin, Liu Lijun, Wang Yuan
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011) Vol. 34 ( 1 ) page： 1123 - 1128 2011
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Modeling of the 3D Unsteady Melt Flow in an Industrial-Scale Cz-Si Crystal Growth Using LES Method
Liu Xin, Liu Lijun, Wang Yuan, Kakimoto Koichi
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010) Vol. 27 ( 1 ) page： 1035 - 1039 2010
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Modeling and simulation of Si crystal growth from melt Reviewed International coauthorship
Lijun Liu, Hiroaki Miyazawa, Satoshi Nakano, Xin Liu, Zaoyang Li, Koichi Kakimoto
Phys. Status Solidi C Vol. 6 ( 3 ) page： 645 - 652 2009.1