Faculty Profiles - 松山　智至

Papers - 松山　智至

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Visualization of intracellular elements using scanning X-ray fluorescence microscopy Reviewed

Mari Shimura, Lukasz Szyrwiel, Satoshi Matsuyama, Kazuto Yamauchi

Metallomics: Recent Analytical Techniques and Applications page： 63 - 92 2017.1

Language：English Publishing type：Part of collection (book) Publisher：Springer Japan

Recent technological developments have enabled the imaging of chemical elements in cells, although quantitative analyses, such as by inductively coupled plasma mass spectrometry, were developed previously. Applications allowing high-resolution imaging at the single-cell level are anticipated in cell biology and medicine, where the roles of elements, especially in relation to intracellular molecules such as proteins, nucleic acids, lipids, and sugars, are essential for understanding cellular functions. The expression of proteins and genes varies depending on cellular function, and multiple elements are likely to be associated with biological molecules in the functioning of cell proliferation, differentiation, aging, and stress responses. In this review, we describe a scanning X-ray fluorescence microscopy system, which can reliably determine the cellular distribution of multiple elements by a sub-100-nm focusing approach, together with its applications. Visualizing intracellular elements and understanding their dynamics at the single-cell level may provide great insight into their behaviors.

DOI： 10.1007/978-4-431-56463-8_3

Scopus

Generation of apodized X-ray illumination and its application to scanning and diffraction microscopy Reviewed

Krishna P. Khakurel, Takashi Kimura, Hiroki Nakamori, Takumi Goto, Satoshi Matsuyama, Tomoya Sasaki, Masashi Takei, Yoshiki Kohmura, Tetsuya Ishikawa, Kazuto Yamauchi, Yoshinori Nishino

JOURNAL OF SYNCHROTRON RADIATION Vol. 24 ( Pt 1 ) page： 142 - 149 2017.1

Language：English Publishing type：Research paper (scientific journal) Publisher：INT UNION CRYSTALLOGRAPHY

X-ray science has greatly benefited from the progress in X-ray optics. Advances in the design and the manufacturing techniques of X-ray optics are key to the success of various microscopic and spectroscopic techniques practiced today. Here the generation of apodized X-ray illumination using a two-stage deformable Kirkpatrick-Baez mirror system is presented. Such apodized illumination is marked by the suppression of the side-lobe intensities of the focused beam. Thus generated apodized illumination was employed to improve the image quality in scanning X-ray fluorescence microscopy. Imaging of a non-isolated object by coherent X-ray diffractive imaging with apodized illumination in a non-scanning mode is also presented.

DOI： 10.1107/S1600577516017677

Web of Science

Scopus

PubMed

全反射結像ミラーを使った色収差のないX線顕微鏡の開発と顕微分光への応用

松山智至, 安田周平, 山田純平, 岡田浩巳, 香村芳樹, 矢橋牧名, 石川哲也, 山内和人

アブストラクト集 Vol. 5D003 2017.1

光電気化学酸化を援用した触媒表面基準エッチング法による窒化ガリウムの高能率平坦化

木田英香, 藤大雪, 中平雄太, 松山智至, 佐野泰久, 山内和人

精密工学会学術講演会講演論文集 Vol. 2017A page： 19 - 20 2017

Language：Japanese Publisher：公益社団法人精密工学会

我々は，窒化ガリウム (GaN) 基板を平坦化する革新的な手法として触媒表面基準エッチング (Catalyst-Referred Etching; CARE) 法の開発，研究を行っている．現在までに研磨定盤にPt触媒，加工液に純水を用いて，原子レベルに平坦な表面が作製可能となっているが，ステップフロー型であるのでCARE法は加工速度が不十分である．そこで本研究では，GaN基板の高能率平坦化を目指し，光電気化学酸化を援用したCARE法（PEC-CARE加工）を検討することで，加工速度は800 nm/hにまで向上した．

DOI： 10.11522/pscjspe.2017a.0_19

Forefront of Development of Ultraprecise X-ray Mirrors for Synchrotron Radiation X-rays

MATSUYAMA Satoshi, YAMAUCHI Kazuto

Journal of the Japan Society for Precision Engineering Vol. 83 ( 4 ) page： 300 - 304 2017

The development of the dry planarization method with a reference plane by the transportation of active species

Ryokume Reiji, Miyazaki Toshinobu, Sano Yasuhisa, Matsuyama Satoshi, Yamauchi Kazuto

Proceedings of JSPE Semestrial Meeting Vol. 2017 page： 541 - 542 2017

高濃度SF<sub>6</sub>ガスを用いたサブ大気圧プラズマエッチングによるSiC基板の高能率薄化加工

井上裕貴, 田尻光毅, 向井莉紗, 佐野泰久, 松山智至, 山内和人

精密工学会学術講演会講演論文集 Vol. 2017 page： 975 - 976 2017

Language：Japanese Publisher：公益社団法人精密工学会

SiCデバイス製造工程においてサブ大気圧プラズマを用いたプラズマエッチング加工を検討している。今回、実用化を視野に入れた加工速度を達成することを目指した。SF6の供給量と投入電力を増大させ、反応種であるFラジカル数を増加させることで加工速度を向上させた。大電力の投入はこれまで困難であったが、新たな試料台を用いることで大電力を投入しても安定なプラズマの発生に成功し、2インチウエハ全面加工速度15.2 μm/minを達成した。

DOI： 10.11522/pscjspe.2017S.0_975

触媒表面基準エッチング法における水素水を用いた被毒除去法の提案

中平雄太, 礒橋藍, Bui Pho, 稻田辰昭, 藤大雪, 木田英香, 松山智至, 佐野泰久, 山内和人

精密工学会学術講演会講演論文集 Vol. 2017 ( 0 ) page： 1 - 2 2017

Language：Japanese Publisher：公益社団法人精密工学会

我々はこれまで触媒表面基準エッチング法の開発を行ってきた。本手法ではエッチング反応による加工が、触媒作用を有する研磨パッドの近傍のみで進行するため凸部からの選択的な加工が可能である。砥粒等の機械的作用によるダメージはなく効率的に基準面形状の転写が可能である。本研究では、水素水を用い触媒表面の加工生成物を除去することで加工速度の安定化を行い、加工液のpHを変化させることで加工速度の向上に成功した。

DOI： 10.11522/pscjspe.2017A.0_1

Change in surface morphology of Si (100) wafer after oxidation with atmospheric-pressure plasma Reviewed

Hiroyasu Takei, Satoshi Kurio, Satoshi Matsuyama, Kazuto Yamauchi, Yasuhisa Sano

Key Engineering Materials Vol. 723 page： 242 - 246 2017

Language：English Publishing type：Research paper (international conference proceedings) Publisher：Trans Tech Publications Ltd

Modern surface processing of semiconductors or oxide materials requires highly precise temporal control of each processing step. In addition, large wafers must be processed quickly for high throughput. We have developed a numerically controlled sacrificial oxidation method with atmospheric-pressure plasma using electrode arrays. In this method, we oxidized the surface of a wafer with atmospheric-pressure plasma applied precisely by an electrode array, and then dipped the wafer in HF solution to remove the surface oxide layer. The plasma process time can be controlled independently at each electrode area. The oxidation rate and surface profile of the treated wafer are crucial for precision processing. We investigated the oxidation rate of atmospheric-pressure plasma oxidation by spectroscopic ellipsometry and examined the surface morphologies of untreated and treated wafers by atomic force microscopy. The surface profile smoothness correlated with the plasma oxidation time and electrode voltage during oxidation. The surface roughness tended to increase when the sample was oxidized for longer times with higher electrode voltage. This correlation between surface roughness and oxidation time resembled the results of Si/SiO2 interfacial roughness in the case of thermal oxidation. In the plasma sacrificial oxidation process, the increase of surface roughness at the Si/SiO2 interface by plasma oxidation must be considered.

DOI： 10.4028/www.scientific.net/KEM.723.242

Scopus

多層膜KBミラーを用いたX線自由電子レーザーナノ集光システムの開発

川合蕉吾, 松山智至, 井上陽登, 湯本博勝, 犬伏雄一, 小山貴久, 登野健介, 大橋治彦, 大坂泰斗, 矢橋牧名, 石川哲也, 山内和人

精密工学会学術講演会講演論文集 Vol. 2017 page： 959 - 960 2017

Language：Japanese Publisher：公益社団法人精密工学会

X線自由電子レーザーは超高強度という非常に優れた性質をもつ．その性能をより向上させるためには，高精度かつ大開口数であるX線集光光学系の開発が必要不可欠である．我々は，大開口数多層膜ミラーを用いた集光光学系をSPring-8に構築した．そして，X線グレーチング干渉計で波面計測を行うことによって多層膜ミラーの作製誤差を計測しさらにこれを修正した．λ/4程度の精度で多層膜集光ミラーを完成させた．

DOI： 10.11522/pscjspe.2017S.0_959

ニッケル触媒を利用した純水ベースの触媒表面基準エッチング法の開発

藤大雪, 礒橋藍, 稻田辰昭, 中平雄太, 木田英香, 松山智至, 佐野泰久, 山内和人

精密工学会学術講演会講演論文集 Vol. 2017 ( 0 ) page： 35 - 36 2017

Language：Japanese Publisher：公益社団法人精密工学会

我々は機能性材料を平坦化する手法として触媒表面基準エッチング法を開発してきた．加工液に純水，触媒にPt，を用いる本手法は高精度表面の実現を可能にするがステップフロー型エッチングであるため加工速度は未だ不十分である．そこで本研究ではニッケルを触媒として利用し，加工速度の向上を図った．表面が酸化され化学的不活性になりやすいニッケルを電気化学的手法によりその触媒活性を安定させ超高速加工を実現した．

DOI： 10.11522/pscjspe.2017A.0_35

Planarization of SiC and oxide surfaces by using Catalyst-Referred Etching with water

Pho Van Bui, Ai Isohashi, Daisetsu Toh, Satoshi Matsuyama, Kouji Inagaki, Yasuhisa Sano, Kazuto Yamauchi

Proceedings of the 17th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2017 page： 157 - 158 2017

Publishing type：Research paper (international conference proceedings)

A novel abrasive-free planarization method called catalyst-referred etching (CARE) has been invented and developed in our group. In this method, a platinum film, which acts as a catalyst, is deposited on an elastic pad that is rotated in contact with a wafer surface in water. CARE can produce flat, undamaged, and smooth SiC and SiO2 surfaces with a root-mean-square (RMS) roughness of less than 0.1 nm over a whole wafer. The mechanism is considered a dissociative adsorption of water molecules onto the Si-C bonds at the topmost Si surface. The gross activation barrier strongly correlates with the stability of the metastable state and is reduced by the formation of Pt-O chemical bonds, leading to an enhancement of the etching reaction.

Scopus

Stabilization of removal rate of silica glass on catalyst-referred etching by cleaning catalyst surface

Yuta Nakahira, Ai Isohashi, Tatsuaki Inada, Daisetsu Toh, Hideka Kida, Satoshi Matsuyama, Yasuhisa Sano, Kazuto Yamauchi

ICPT 2017 - International Conference on Planarization/CMP Technology page： 110 - 114 2017

Publishing type：Research paper (international conference proceedings)

A novel planarization method termed catalyst-referred etching (CARE) was developed, in which platinum and pure water were respectively employed as a catalyst and an etchant to create highly ordered surfaces with a step terrace structure on oxide materials, such as quarts, sapphire, and zinc oxide substrates. The step heights were in good agreement with the theoretical single-bilayer thickness. However, the removal rate of the etching process gradually decreased with the processing time. This decrease in the removal rate was attributed to degradation of the catalyst via the adsorption of silicic acid produced during the CARE process on the catalyst surface. Two methods were employed to remove the silicic acid: control of the potential of the Pt surface and cleaning of the catalyst pad with H2 water. The removal rate was maintained by using both methods. In both methods, the potential of the Pt surface was set at the H generation level. It is proposed that the generated hydrogen atoms broke the Pt-O bonds, thereby maintaining the reactivity of the catalyst surface.

Scopus

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Papers - 松山　智至