研究者詳細 - 松山　智至

論文 - 松山　智至

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X-Ray Single-Grating Interferometry for Wavefront Measurement and Correction of Hard X-Ray Nanofocusing Mirrors 査読有り Open Access

Yamada, J; Inoue, T; Nakamura, N; Kameshima, T; Yamauchi, K; Matsuyama, S; Yabashi, M

SENSORS 20 巻 ( 24 ) 頁： 7356 - 7356 2020年12月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Sensors (Switzerland)

X‐ray single‐grating interferometry was applied to conduct accurate wavefront corrections for hard X‐ray nanofocusing mirrors. Systematic errors in the interferometer, originating from a grating, a detector, and alignment errors of the components, were carefully examined. Based on the measured wavefront errors, the mirror shapes were directly corrected using a differential deposition technique. The corrected X‐ray focusing mirrors with a numerical aperture of 0.01 attained two‐dimensionally diffraction‐limited performance. The results of the correction indicate that the uncertainty of the wavefront measurement was less than λ/72 in root‐mean‐square value.

DOI： 10.3390/s20247356

hv<sup>2</sup>-concept breaks the photon-count limit of RIXS instrumentation. 査読有り国際共著

Zhou KJ, Matsuyama S, Strocov VN

Journal of synchrotron radiation 27 巻 ( Pt 5 ) 頁： 1235 - 1239 2020年9月

Focus characterization of an X-ray free-electron laser by intensity correlation measurement of X-ray fluorescence. 査読有り

Nakamura N, Matsuyama S, Inoue T, Inoue I, Yamada J, Osaka T, Yabashi M, Ishikawa T, Yamauchi K

Journal of synchrotron radiation 27 巻 ( 5 ) 頁： 1366 - 1371 2020年9月

High-resolution micro channel-cut crystal monochromator processed by plasma chemical vaporization machining for a reflection self-seeded X-ray free-electron laser 査読有り

Shotaro Matsumura, Taito Osaka, Ichiro Inoue, Satoshi Matsuyama, Makina Yabashi, Kazuto Yamauchi, Yasuhisa Sano

Optics Express 28 巻 ( 18 ) 頁： 25706 - 25706 2020年8月

Compact full-field hard x-ray microscope based on advanced Kirkpatrick–Baez mirrors 査読有り

Jumpei Yamada, Satoshi Matsuyama, Raita Hirose, Yoshihiro Takeda, Yoshiki Kohmura, Makina Yabashi, Kazuhiko Omote, Tetsuya Ishikawa, Kazuto Yamauchi

Optica 7 巻 ( 4 ) 頁： 367 - 367 2020年4月

An abrasive-free chemical polishing method assisted by nickel catalyst generated by in situ electrochemical plating. 査読有り

Toh D, Van Bui P, Isohashi A, Matsuyama S, Yamauchi K, Sano Y

The Review of scientific instruments 91 巻 ( 4 ) 頁： 045108 2020年4月

An abrasive-free chemical polishing method assisted by nickel catalyst generated by in situ electrochemical plating 査読有り

D. Toh, P. V. Bui, A. Isohashi, S. Matsuyama, K. Yamauchi, Y. Sano

Review of Scientific Instruments 91 巻 ( 4 ) 頁： 045108 2020年4月

Development of an Experimental Platform for Combinative Use of an XFEL and a High-Power Nanosecond Laser 査読有り

Y. Inubushi, T. Yabuuchi, T. Togashi, K. Sueda, K. Miyanishi, Y. Tange, N. Ozaki, T. Matsuoka, R. Kodama, T. Osaka, S. Matsuyama, K. Yamauchi, H. Yumoto, T. Koyama, H. Ohashi, K. Tono, M. Yabashi

Applied Science 10 巻 ( 7 ) 頁： 2224 - 2224 2020年3月

Focusing mirror for coherent hard X-rays

Kazuto Yamauchi, Hidekazu Mimura, Satoshi Matsuyama, Hirokatsu Yumoto, Takashi Kimura, Yukio Takahashi, Kenji Tamasaku, Tetsuya Ishikawa

Synchrotron Light Sources and Free-Electron Lasers: Accelerator Physics, Instrumentation and Science Applications 頁： 1093 - 1122 2020年1月

掲載種別：論文集(書籍)内論文

The development of high-precision x-ray mirrors is described. Atomistic surface polishing technique, elastic emission machining (EEM), was developed more than 30 years ago. This chapter describes how the polishing technique was improved to successfully apply to the synchrotron radiation and XFEL mirrors. The key was actually the figure metrology. The metrology was dramatically advanced by using coherent x-rays at the 1-km beamline of SPring-8, where classical ray-tracing approach was no more valid so that wave-optical approach was developed. Various optical references were developed to improve the global surface figures of mirrors. Successful development of elliptical mirrors helped attaining less than 100 nm focal spot in the conventional beamlines using Kirkpatrick-Baez focusing configuration, reaching 7 nm at the 1-km beamline. The speckle-free mirrors and focusing mirrors were used in XFEL facilities. These mirrors have been applied for various types of scanning nano-probes, imaging system, and generation of high-intensity photon fields for nonlinear xray optical experiments.

DOI： 10.1007/978-3-030-23201-6_54

Scopus

Atomically smooth Si surface planarized using a thin film catalyst in pure water

Pho van Bui, Daisetsu Toh, Shinsaku Shiroma, Taku Hagiwara, Ai Isohashi Osaka, Satoshi Matsuyama, Yasuhisa Sano, Kazuto Yamauchi

Proceedings of the 20th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2020 頁： 43 - 44 2020年

掲載種別：研究論文（国際会議プロシーディングス）

A catalytically assisted etching method was applied to planarization of Si surfaces for the ultra-precision fabrication of X-ray mirrors. The study demonstrates that an atomically smooth surface with less than 0.1 nm root-mean-square roughness could be achieved on a Si substrate using a thin metal film and pure water as the catalyst and etching solution, respectively. The removal rate using a Pt catalyst can reach to over 500 nm/h. Density functional theory calculations is carried out to understand the initial steps of the catalyzed hydrolysis reaction at catalyst-Si interface during the planarization. The removal mechanism is expected to be similar to that in SiC and SiO2.

Scopus

Cause of etch pits during the high speed plasma etching of silicon carbide and an approach to reduce their size

Y. Nakanishi, R. Mukai, S. Matsuyama, K. Yamauchi, Y. Sano

Materials Science Forum 1004 MSF 巻頁： 161 - 166 2020年

掲載種別：研究論文（国際会議プロシーディングス）

To reduce the on-resistance in vertical power transistors, backside thinning is required after device processing. However, it is difficult to thin silicon carbide (SiC) wafers with a high removal rate by conventional mechanical processing because their hardness and brittleness cause cracks and chips during thinning. Therefore, the authors have attempted to thin SiC wafers using plasma chemical vaporization machining (PCVM), which is plasma etching using high-pressure plasma. PCVM has a high removal rate because of the high radical density in the high-pressure plasma, and it does not form a damaged layer on the processed surface because of the low ion energy. The authors have already achieved a very high removal rate of 15.6 μm/min by PCVM. However, many etch pits were generated on the wafer during PCVM in these high-speed machining conditions. Therefore, this study, using molten potassium hydroxide (KOH) etching, investigated the cause of such etch pits and found that they may stem from threading screw dislocation in the wafers. In addition, this research considered a process for reducing an etch pit size and succeeded in doing so by controlling wafer temperature.

DOI： 10.4028/www.scientific.net/MSF.1004.161

Scopus

Prototype design and experimental tests of a zoom mirror system for the APS upgrade

Xianbo Shi, Zhi Qiao, Sheikh Mashrafi, Ross Harder, Deming Shu, Max Wyman, Jayson Anton, Steven Kearney, Luca Rebuffi, Tim Mooney, Jun Qian, Bing Shi, Satoshi Matsuyama, Kazuto Yamauchi, Lahsen Assoufid

Proceedings of SPIE - The International Society for Optical Engineering 11491 巻 2020年

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）出版者・発行元：SPIE

Mirror-based zoom optics systems can offer variable focal spot sizes over a wide range, which is essential for coherent nanoprobe beamlines, such as the proposed Atomic beamline in the Advanced Photon Source (APS) upgrade project. The success of the zoom mirror system in the nano-focusing regime requires the development of high-precision deformable mirrors, in-situ surface profilers and wavefront sensors, and advanced feedback control system. A prototype 1-D zoom mirror system consists of two vertical focusing mirrors was designed, assembled, and tested at the APS 1-BM beamline. The system consists of a bender-based mirror with a capacitive-sensor- array-based real-time mirror profiler, a bimorph adaptive mirror, and a grating interferometer for the wavefront monitoring. In this work, we present the design and test results of the prototype system demonstrating its zoom focusing capability.

DOI： 10.1117/12.2569129

Scopus

触媒表面電位制御を取り入れた光電気化学触媒表面基準エッチング法によるSiC基板の高能率平坦化加工

大西諒典, 木田英香, 藤大雪, 松山智至, 佐野泰久, 山内和人

精密工学会学術講演会講演論文集 2019A 巻頁： 28 - 29 2019年8月

記述言語：日本語出版者・発行元：公益社団法人精密工学会

我々はSiC基板の新たな平坦化加工技術として光酸化を援用した触媒表面基準エッチング法の開発を行っている．さらに，現在では光酸化を促進するため，基板への逆バイアス印加を提案している．しかしながら，高電圧を印加した場合，基板と接する触媒の表面電位まで上昇してしまい触媒活性が低下するため，加工速度の向上に限りがあった．本研究では触媒の表面電位を制御することで更なる高能率化を目指した．

DOI： 10.11522/pscjspe.2019a.0_28

Catalyzed chemical polishing of SiO<sub>2</sub> glasses in pure water. 査読有り

Toh D, Bui PV, Isohashi A, Kidani N, Matsuyama S, Sano Y, Morikawa Y, Yamauchi K

The Review of scientific instruments 90 巻 ( 4 ) 頁： 045115 2019年4月

多層膜結像ミラーを用いた高分解能X線顕微鏡の開発

松山智至, 山田純平, 波多健太郎, 萩原拓, 表和彦, 廣瀬雷太, 武田佳彦, 香村芳樹, 矢橋牧名, 石川哲也, 山内和人

精密工学会春季大会 2019年3月

Surface Finishing Method using Plasma Chemical Vaporization Machining for Narrow Channel Walls of X-ray Crystal Monochromators 査読有り

T. Hirano, Y. Morioka, S. Matsumura, Y. Sano, T. Osaka, S. Matsuyama, M. Yabashi, K. Yamauchi

Int. J. Automation Technol. 13 巻 ( 2 ) 頁： 246 - 253 2019年3月

Development of a glue-free bimorph mirror for use in vacuum chambers 査読有り

Y. Ichii, H. Okada, H. Nakamori, A. Ueda, H. Yamaguchi, S. Matsuyama, K. Yamauchi

Review of Scientific Instruments 90 巻 ( 2 ) 頁： 021702 2019年2月

High-efficiency planarization of GaN wafer by catalyst-referred etching with positive-biased photo-electrochemical oxidation

Ryosuke Ohnishi, Daisetsu Toh, Satoshi Matsuyama, Ai Isohashi, Yasuhisa Sano, Kazuto Yamauchi

Proceedings - 34th ASPE Annual Meeting 頁： 79 - 83 2019年

High-efficiency planarization of SIC wafers by water-CARE (Catalyst-referred etching) employing photoelectrochemical oxidation

H. Kida, D. Toh, P. V. Bui, A. Isohashi, R. Ohnishi, S. Matsuyama, K. Yamauchi, Y. Sano

Materials Science Forum 963 MSF 巻頁： 525 - 529 2019年

掲載種別：研究論文（国際会議プロシーディングス）

© 2019 Trans Tech Publications Ltd, Switzerland. Catalyst-referred etching (CARE) is an abrasive-free and damage-free polishing method that involves applying a catalytic reaction at the contact point of the catalyst surface and workpiece in a chemical solution. An atomically flat silicon carbide (SiC) wafer surface can be obtained by the CARE process. Recently, it was found that water can be used as a chemical solution, even in the case of SiC polishing. However, its current removal rate of 4H-SiC (0001) 4°off-axis substrate is only 2 nm/h and is expected to increase. In this study, the use of photoelectrochemical oxidation in combination with the CARE process using water was investigated, successfully increasing the removal rate up to approximately 100 nm/h.

DOI： 10.4028/www.scientific.net/MSF.963.525

Scopus

High-efficiency SiC polishing using a thin film catalyst in pure water

Pho Van Bui, Daisetsu Toh, Satoshi Matsuyama, Yasuhisa Sano, Kazuto Yamauchi

European Society for Precision Engineering and Nanotechnology, Conference Proceedings - 19th International Conference and Exhibition, EUSPEN 2019 頁： 50 - 51 2019年

掲載種別：研究論文（国際会議プロシーディングス）

A novel abrasive-free method called catalyst-referred etching (CARE) is used for planarization of SiC In this method, a thin platinum (Pt) catalyst layer is deposited on an elastic pad. The planarization is performed by rotating the catalyst pad in contact with a wafer surface in water. After the planarization, SiC surfaces are atomically smooth with a root-mean-square (RMS) roughness of less than 0.1 nm over a whole wafer. Thanks to the use of pure water as the etchant, CARE is an environmentally friendly planarization method and potentially applicable to planarization of many functional materials, including GaN and oxides surfaces. However, the practical application of CARE is limited due to its low material removal rate (MRR) when using a Pt catalyst. Therefore, improving its MRR is highly demanded. Our recent research indicated that the etching proceeds via dissociative adsorption of water molecules onto Si-C bonds at topmost Si atoms. The lower activation barrier in the presence of the Pt catalyst is mainly due to the chemical stabilization resulting from the formation of Pt-0 bonds at the Pt-SiC interface. Accordingly, the reaction will be promoted by tuning the binding energy with O using other catalysts. Therefore, we experimentally investigate the dependence of MRR on various catalyst materials. The study reveals that Ni and Ru have high catalytic performance. Compared to Pt, Ni and Ru have the higher binding energy with O. The stronger chemical bonds promote water dissociation and stabilization of chemical bonds at the catalyst-SiC interface, leading to lowering its activation barrier and enhancement of the etching reaction.

Scopus

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