Updated on 2024/09/11

写真a

 
ARAI Manabu
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Designated professor
Title
Designated professor
Contact information
メールアドレス

Degree 1

  1. Dr. ( Tohoku University ) 

Research Interests 5

  1. 高周波デバイス

  2. パワーデバイス

  3. GaN

  4. SiC

  5. ワイドバンドギャップ半導体

Research Areas 1

  1. Others / Others  / 半導体・プロセス

Research History 1

  1. 新日本無線株式会社

    1997.4 - 2020.6

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    Country:Japan

Education 3

  1. Tohoku University   Graduate School, Division of Engineering

    - 1997.3

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    Country: Japan

  2. Tohoku University   Graduate School, Division of Engineering

    - 1994.3

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    Country: Japan

  3. Tohoku University   Faculty of Engineering

    - 1992.3

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    Country: Japan

Professional Memberships 3

  1. 電子情報通信学会

  2. 応用物理学会

  3. IEEE

Committee Memberships 2

  1. 電子情報通信学会 電子デバイス研究専門委員会   副委員長  

       

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    Committee type:Academic society

  2. 応用物理学会 先進パワー半導体分科会   幹事  

       

 

Papers 7

  1. Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping

    Kumabe, T; Yoshikawa, A; Kawasaki, S; Kushimoto, M; Honda, Y; Arai, M; Suda, J; Amano, H

    IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 71 ( 5 ) page: 3396 - 3402   2024.5

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    Publisher:IEEE Transactions on Electron Devices  

    Nearly ideal vertical AlxGa-{{1}-{x}}text{N} ({0.7} leq {x} < {1.0} ) p-n diodes are fabricated on an aluminum nitride (AlN) substrate. Distributed polarization doping (DPD) was employed for both p-type and n-type layers of the p-n junction, instead of conventional impurity doping, to overcome the major bottleneck of AlN-based material: the control of conductivity. Capacitance-voltage measurements revealed that the net charge concentration agreed well with the DPD charge concentration expected from the device layer structure. The fabricated devices exhibited a low turn-on voltage of 6.5 V, a low differential specific on-resistance of 3 text{M}Omega cm2, electroluminescence (maximum at 5.1 eV), and an ideality factor of 2 for a wide range of temperatures (room temperature - 573 K). Moreover, the breakdown electric field was 7.3 MV cm-1, which was almost twice as high as the reported critical electric field of GaN at the same doping concentration. These results clearly demonstrate the usefulness of DPD in the fabrication of high-performance AlN-based power devices.

    DOI: 10.1109/TED.2024.3367314

    Web of Science

    Scopus

  2. 15 GHz GaN Hi-Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W

    Kawasaki, S; Kumabe, T; Deki, M; Watanabe, H; Tanaka, A; Honda, Y; Arai, M; Amano, H

    IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 71 ( 3 ) page: 1408 - 1415   2024.3

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    Publisher:IEEE Transactions on Electron Devices  

    The p+-n-n - n+ structure, known as Hi-Lo structure, was investigated in gallium nitride (GaN) single-drift-region (SDR) impact ionization avalanche transit-time (IMPATT) diodes to improve the output power and efficiency. The 15 GHz GaN Hi-Lo IMPATT diode was designed according to the Scharfetter and Gummel model under realistic conditions, suppressing the tunneling current (<10-4 cm2) and breakdown voltage (< 400 V). Even in such conditions, the calculated efficiency was higher than that of the p+-n abrupt junction structure and the improvement of RF characteristics was expected. The fabricated GaN Hi-Lo IMPATT diodes showed a clear avalanche breakdown and a pulsed microwave oscillation in the frequency range from 15 to 17 GHz. The maximum peak output power of 25.5 W and the efficiency of 2% were achieved, showing the highest values on microwave band GaN IMPATT diodes, and we confirmed that the Hi-Lo structure is effective for the high-power and high-efficiency operation of GaN IMPATT diodes.

    DOI: 10.1109/TED.2023.3345822

    Web of Science

    Scopus

  3. Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz

    Kawasaki Seiya, Kumabe Takeru, Ando Yuto, Deki Manato, Watanabe Hirotaka, Tanaka Atsushi, Honda Yoshio, Arai Manabu, Amano Hiroshi

    IEEE ELECTRON DEVICE LETTERS   Vol. 44 ( 8 ) page: 1328 - 1331   2023.8

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    Publisher:IEEE Electron Device Letters  

    An experimental study on the effects of junction capacitance and current density on the oscillation characteristics of GaN single-drift-region (SDR) impact ionization avalanche transit-time (IMPATT) diodes were carried out using GaN p+-n abrupt junction diodes of various diameters, 200, 150, and 100 μ m , with a depletion layer width of 2 μ m. The fabricated diodes showed a clear avalanche breakdown at 315 V and a pulsed microwave oscillation with a peak output power exceeding 30 dBm. The oscillation frequency depended on junction diameter and current density. It was widely modulated from 8.56 to 21.1 GHz with decreasing junction diameter and increasing current density. The highest oscillation frequency was obtained with a current density of 13.8 kA/cm2 and a junction diameter of 100 μ m. A numerical calculation based on Read-type small-signal theory was carried out and found to well explain the experimental results.

    DOI: 10.1109/LED.2023.3285938

    Web of Science

    Scopus

  4. Demonstration of AlN-based Vertical p-n Diodes with Dopant-Free Distributed-Polarization Doping

    Kumabe T., Yoshikawa A., Kushimoto M., Honda Y., Arai M., Suda J., Amano H.

    Technical Digest - International Electron Devices Meeting, IEDM     2023

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    Publisher:Technical Digest - International Electron Devices Meeting, IEDM  

    Nearly ideal AlN-based vertical p-n diodes are demonstrated on an AIN substrate utilizing dopant-free distributed-polarization doping (DPD). Capacitance-voltage measurements revealed that the effective doping concentration agreed well with the designed DPD charge concentration. The fabricated devices exhibited a low tum-on voltage of 6.5 V, a low differential specific ON-resistance of 3 mO cm2, and an ideality factor of 2 for a wide range of temperatures (room temperature-573 K). Moreover, the breakdown electric field was 7.3 MV/cm, which was almost twice as high as the reported critical electric field of 4H-SÌC and GaN. These results clearly demonstrate the usefulness of DPD in the fabrication of high-performance AlN-based power devices.

    DOI: 10.1109/IEDM45741.2023.10413866

    Scopus

  5. Experimental demonstration of GaN IMPATT diode at X-band

    Kawasaki, S; Ando, Y; Deki, M; Watanabe, H; Tanaka, A; Nitta, S; Honda, Y; Arai, M; Amano, H

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 4 )   2021.4

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    Publisher:Applied Physics Express  

    We report the first experimental demonstration of microwave oscillation in GaN impact ionization avalanche time transit (IMPATT) diodes at the X-band. The device used in this study is a single drift diode with a p+–n simple abrupt junction and vertical mesa termination. The reverse I–V characteristic of the diode shows low leakage current, clear avalanche breakdown, and high avalanche capability, as required for IMPATT operation. Microwave testing is performed in an X-band waveguide circuit with a reduced-height waveguide resonant cavity. Oscillations are observed at 9.52 GHz at a power of ∼56 mW.

    DOI: 10.35848/1882-0786/abe3dc

    Web of Science

    Scopus

  6. First Demonstration of Si Superjunction BJT with Ultra-High Current Gain and Low ON-resistance

    Yano K., Hashimoto M., Matsukawa N., Matsuo A., Mouraguchi A., Arai M., Shimizu N.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs   Vol. 2020-September   page: 451 - 454   2020.9

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    Publisher:Proceedings of the International Symposium on Power Semiconductor Devices and ICs  

    A 650-V, 10-A Si-superjunction bipolar transistor (Si-SJBJT), has been experimentally demonstrated for the first time. The fabricated SJBJT has a hFE of more than 200 at a JC of less than 10 A/cm2 for a VCE of 0.2 V and even at a JC of more than 100 A/cm2 for a VCE of 2.0 V, which is superior to commercial Si-bipolar transistors. The specific ON-resistance of the SJBJT is 4.1 m $\omega$ cm2 for an hFE of 11.0 and 2.2 m $\omega cm^{2}$ for an hFE of 7.0. The turn-off behavior of the SJBJT has a 2.3 $\mu$s storage time similar to conventional BJTs, whereas the tail current of the SJBJT is smaller than that of the BJTs, owing to the quick extraction of the stored carriers near the drain region by the SJ structure. The high current driving capability of the SJBJT achieves a turn-on time less than that of the BJTs.

    DOI: 10.1109/ISPSD46842.2020.9170099

    Scopus

  7. First Demonstration of Si Superjunction BJT with Ultra-High Current Gain and Low ON-resistance

    Yano, K; Hashimoto, M; Matsukawa, N; Matsuo, A; Mouraguchi, A; Arai, M; Shimizu, N

    PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020)     page: 451 - 454   2020

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Presentations 1

  1. First Demonstration of Si Superjunction BJT with Ultra-High Current Gain and Low ON-resistance

    Yano K.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs 

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    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    DOI: 10.1109/ISPSD46842.2020.9170099

    Scopus