Updated on 2021/06/08

写真a

 
ARAI Manabu
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Designated professor
Title
Designated professor
Contact information
メールアドレス

Degree 1

  1. Dr. ( Tohoku University ) 

Research Interests 5

  1. 高周波デバイス

  2. パワーデバイス

  3. GaN

  4. SiC

  5. ワイドバンドギャップ半導体

Research Areas 1

  1. Others / Others  / 半導体・プロセス

Research History 1

  1. 新日本無線株式会社

    1997.4 - 2020.6

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    Country:Japan

Education 3

  1. Tohoku University   Graduate School, Division of Engineering

    - 1997.3

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    Country: Japan

  2. Tohoku University   Graduate School, Division of Engineering

    - 1994.3

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    Country: Japan

  3. Tohoku University   Faculty of Engineering

    - 1992.3

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    Country: Japan

Professional Memberships 3

  1. 電子情報通信学会 電子デバイス研究専門委員会   専門委員

  2. 応用物理学会 先進パワー半導体分科会   幹事

  3. IEEE

 

Papers 2

  1. Experimental demonstration of GaN IMPATT diode at X-band

    Kawasaki Seiya, Ando Yuto, Deki Manato, Watanabe Hirotaka, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Arai Manabu, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 4 )   2021.4

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    Publisher:Applied Physics Express  

    DOI: 10.35848/1882-0786/abe3dc

    Web of Science

    Scopus

  2. First Demonstration of Si Superjunction BJT with Ultra-High Current Gain and Low ON-resistance

    Yano K., Hashimoto M., Matsukawa N., Matsuo A., Mouraguchi A., Arai M., Shimizu N.

    PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020)     page: 451 - 454   2020

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Presentations 1

  1. First Demonstration of Si Superjunction BJT with Ultra-High Current Gain and Low ON-resistance

    Yano K.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs 

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    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    DOI: 10.1109/ISPSD46842.2020.9170099

    Scopus