Updated on 2022/05/13

写真a

 
Heajeong Cheong
 
Organization
Graduate School of Engineering Graduate School of Engineering Assistant Professor
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering
Title
Assistant Professor
Contact information
メールアドレス
External link

Degree 1

  1. 博士(学術) ( 2019.3   東京工業大学 ) 

Research Interests 1

  1. LED,IGZO,マイクロ波

Research Areas 1

  1. Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

Current Research Project and SDGs 1

  1. GaNを利用したマイクロLEDの開発

Research History 6

  1. Nagoya University   Assistant Professor

    2020.5

  2. Nagoya University

    2016.11 - 2020.3

  3. 産業技術総合研究所   フレキシブルエレクトロニクス研究センター   特別研究員

    2013.4 - 2015.12

  4. 産業技術総合研究所   ナノシステム研究部門   特別研究員

    2012.10 - 2013.3

  5. 産業技術総合研究所   環境化学技術研究部門   研究員

    2011.10 - 2012.5

  6. Samsung Electronics Co., Ltd.   System LSI C&M PA

    2009.3 - 2011.3

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    Country:Korea, Republic of

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Education 3

  1. Tokyo Institute of Technology

    2004.10 - 2009.3

  2. 東亜大学校大学院(韓国)   自然科学部   修士課程新素材物理専攻

    2001.3 - 2003.2

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    Country: Korea, Republic of

  3. 東亜大学校(韓国)   自然科学部   新素材物理学科 

    1999.9 - 2001.2

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    Country: Korea, Republic of

Committee Memberships 2

  1.   VBL運営委員会  

    2020.4   

  2.   極低温実験室運営委員会委員  

    2020.4   

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    Committee type:Other

Awards 2

  1. The 2nd IEEE Tokyo Student workshop、オリジナリティ賞受賞

    2005.12   東京工業大学   100年後の光デバイス

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  2. 交流研究助成金

    2005.3   財団法人丸文研究交流財団   シリコン量子ドット発光デバイスの研究

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    Award type:Award from publisher, newspaper, foundation, etc.  Country:Japan

 

Papers 18

  1. Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light Irradiation Reviewed

    Nakamura Takashi, Cheong Hea Jeong, Takamura Masahiko, Yoshida Manabu, Uemura Sei

    NANOMATERIALS   Vol. 8 ( 8 )   2018.8

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Nanomaterials  

    Copper nitride particles have a low decomposition temperature, they absorb light, and are oxidation-resistant, making them potentially useful for the development of novel wiring inks for printing circuit boards by means of intense pulsed light (IPL) sintering at low-energy. Here, we compared the thermal decomposition and light absorption of copper materials, including copper nitride (Cu3N), copper(I) oxide (Cu2O), or copper(II) oxide (CuO). Among the copper compounds examined, copper nitride had the second highest light absorbency and lowest decomposition temperature; therefore, we concluded that copper nitride was the most suitable material for producing a wiring ink that is sintered by means of IPL irradiation. Wiring inks containing copper nitride were compared with those of wiring inks containing copper nitride, copper(I) oxide, or copper(II) oxide, and copper conversion rate and sheet resistance were also determined. Under low-energy irradiation (8.3 J cm−2), copper nitride was converted to copper at the highest rate among the copper materials, and provided a sheet resistance of 0.506 Ω·sq−1, indicating that copper nitride is indeed a candidate material for development as a wiring ink for low-energy intense pulsed light sintering-based printed circuit board production processes.

    DOI: 10.3390/nano8080617

    Web of Science

    Scopus

  2. Flexible InGaZnO TFT devices obtained via humid-UV irradiation with an aqueous-fluoroalcoholic precursor Reviewed

    Shintaro Ogura, Heajeong Cheong, Sei Uemura, Hirobumi Ushijima and Nobuko Fukuda.

    Flexible and Printed Electronics     2016.11

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    Language:English   Publishing type:Research paper (scientific journal)  

  3. Rapid preparation of solution-processed InGaZnO thin film by microwave irradiation and photoirradiation Reviewed

    Heajeong Cheong, Shintaro Ogura, Hirobumi Ushijima, Manabu Yoshida, Nobuko Fukuda, and Sei Uemura,

    AIP advanced     2015.3

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1063/1.4922512

  4. Formation of luminescent Si nanocrystals by high-temperature rapid thermal chemical vapor deposition Reviewed

    Hea Jeong Cheong, Jung Hyun Kang, Jae Kwon Kim, Yong Kim, Tae Hun Chung, Hong Jun Bark, Jae-Yel Yi

    Appl. Phys. Lett.     2003

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1063/1.1616646

  5. Interplay of sidewall damage and light extraction efficiency of micro-LEDs.

    Park JH, Pristovsek M, Cai W, Cheong H, Kumabe T, Lee DS, Seong TY, Amano H

    Optics letters   Vol. 47 ( 9 ) page: 2250 - 2253   2022.5

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    Language:English  

    DOI: 10.1364/OL.456993

    PubMed

  6. Interplay of sidewall damage and light extraction efficiency of micro-LEDs Reviewed

        2021.3

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    Language:English   Publishing type:Research paper (scientific journal)  

  7. The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined stark effect epitaxial layer Reviewed

    Jeong-Hwan Park Wentao Cai,Heajeong Cheong,Yasuhisa Ushida,Da-Hoon Lee, Yuto Ando,Yuta Furusawa,Yoshio Honda,Dong-Seon Lee,Tae-Yeon Seong,and Hiroshi Amano

    Journal of Applied Physics     2021.3

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    Language:English   Publishing type:Research paper (scientific journal)  

  8. Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE Reviewed

    Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 512   page: 78 - 83   2019.4

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    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:Journal of Crystal Growth  

    This study examines the effect of (0 0 0 −1) GaN substrate misorientation on the residual impurities and surface morphology of N-polar GaN grown by metalorganic vapor-phase epitaxy. Carbon, silicon, and oxygen concentrations decreased with increasing GaN substrate misorientation angle, with the lowest impurity concentration achieved for a misorientation angle of 2° toward the m-axis, with 6 × 10 15 cm −3 carbon, 6 × 10 15 cm −3 silicon, and 4 × 10 17 cm −3 oxygen atoms. The oxygen concentration was measured at a depth of 0.5 μm below the wafer surface, and the oxygen concentration decreased with increasing thickness. The incorporation of carbon and oxygen revealed a strong dependence on the misorientation angle. The step distance height of the steps parallel to the [1 1 −2 0] direction (or perpendicular to the [1 −1 0 0] m-direction) was confirmed to be a double-height layer step. This phenomenon indicated that m-direction steps are stable for N-polar growth in GaN. In cases of large misorientation toward the m-axis in of the GaN substrate it was difficult to control the misorientation perpendicular to the nominal direction leading to a-axis direction by wafer bowing at wafer manufacturing. Therefore, step-bunching was generated for each symmetric m-axis due to an increase in the compound's off-angle, thus causing the surface roughness to become large.

    DOI: 10.1016/j.jcrysgro.2019.02.013

    Web of Science

    Scopus

  9. m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates

    Tanaka Atsushi, Ando Yuto, Nagamatsu Kentaro, Deki Manato, Cheong Heajeong, Ousmane Barry, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 215 ( 9 )   2018.5

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Physica Status Solidi (A) Applications and Materials Science  

    In this study, GaN m-plane Schottky barrier diodes are fabricated by metalorganic vapor-phase epitaxy (MOVPE) on several off-angle gallium nitride (GaN) substrates, and the off-cut angle dependence of impurity incorporation is investigated. We show that the MOVPE layer on the substrate inclined 5° toward the [000–1] direction has extremely low impurity incorporation. These results provide important suggestions for the fabrication of m-plane power devices.

    DOI: 10.1002/pssa.201700645

    Web of Science

    Scopus

  10. Solution-processed hybrid organic-inorganic complementary thin-film transistor inverter Reviewed

    Heajeong Cheong, Kazunori Kuribara, Shintaro Ogura, Nobuko Fukuda, Manabu Yoshida, Hirobumi Ushijima and Sei Uemura,

    Jpn. J. Appl. Phys     2016.4

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  11. Investigation of Low Temperature Process of Solution Processed Oxide Semiconductor as a Thin Film Transistor Reviewed

    Hea Jeong Cheong, Shintaro Ogura, Manabu Yoshida, Hirobumi Ushijima, Nobuko Fukuda, Sei Uemura

    J. Photopolym. Sci. Techol     2015

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    Authorship:Lead author   Language:English  

  12. Effect of Microwave Annealing on Oxide-Semiconductor-Precursor Ink Reviewed

    Hea Jeong Cheong, Nobuko Fukuda, Shintaro Ogura, Heisuke Sakai, Yoshida Manabu, Takehito Kodzasa, Hideo Tokuhisa, Kazuhiko Tokoro, Kazuhiko Takeuchi, Ritsuko Nagahata, Takashi Nakamura, and Sei Uemura

    J. Photopolym. Sci. Technol.     2014

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    Authorship:Lead author   Language:English  

  13. Characterization of an Oxide Semiconductor Prepared by Microwave Sintering Reviewed

    Hea Jeong Cheong, Nobuko Fukuda, Heisuke Sakai, Shintaro Ogura, Kazuhiko Takeuchi, Ritsuko Nagahata, Sei Uemura

    Jpn. J. Appl. Phys     2014

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    Authorship:Lead author   Language:English  

  14. Visible Electroluminescence from Spherical-shaped Silicon Nanocrystals Reviewed

    Hea Jeong Cheong, Atsushi Tanaka, Daihei Hippo, Koichi Usami, Yoshishige Tsuchiya, Hiroshi Mizuta, and Shunri Oda

    Jpn. J. Appl. Phys.     2008

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    Authorship:Lead author   Language:English  

  15. Growth of highly Luminescence Silicon Nanocrystals by Rapid Thermal Chemical Vapor Deposition Reviewed

    Yong Kim, Hea Jeong Cheong, Jung Hyun Kang, Jae Kwon Kim, Tae Hun Chung, Hong Jun Bark, Jae-Yel Yi

    Key. Eng. Mat     2005

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    Language:English  

  16. Rapid-thermal-annealing effect on lateral charge loss in metal-oxide-semiconductor capacitors with Ge nanocrystals Reviewed

    Jae Kwon Kim, Hea Jeong Cheong, Yong Kim, Jae-Yel Yi, Hong Jun Bark, S. H. Bang and J. H. Cho

    Appl. Phys. Lett.     2003

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    Language:English   Publishing type:Research paper (scientific journal)  

  17. Rapid Thermal Annealing Effect on Charge Storage Characteristics in MOS Capacitor with Ge Nanocrystals Reviewed

    Jae Kwon Kim, Hea Jeong Cheong, Kyung Hwa Park, Yong Kim, Jae-Yel Yi and Hong Jun Bark, Yong Lee

    J. Kor. Phys. Soc.     2003

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    Language:English   Publishing type:Research paper (scientific journal)  

  18. Charge retention characteristics in a metal-insulator-semiconductor capacitor containing Ge nanocrystal Reviewed

    Yong Kim, Hea Jeong Cheong, Kyung Hwa Park, Tae Hun Chung, Hong Jun Bark, Jae-Yel Yi, Suk, Hyun Bang, and Jin Hyung Cho

    Semicond. Sci. Technol.     2002

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    Language:English   Publishing type:Research paper (scientific journal)  

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Presentations 20

  1. High In-content InGaN Platelet as Underlayer for Light Emitting Diodes toward Long Wavelength Application International conference

    Cai Wentao

    International Conference on Materials and Systems for Sustainability2021  2021.11.5 

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    Event date: 2021.11 - 2021.1

    Language:English   Presentation type:Poster presentation  

    Venue:On-Line   Country:Japan  

  2. The effect of dry etching condition on the micro-LED International conference

    Jeong-hwan Park

    The 21st International Meeting on Information Display  2021.8.27 

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    Event date: 2021.8

    Language:English   Presentation type:Poster presentation  

    Venue:On-Line   Country:Korea, Republic of  

  3. Fabrication of Hybrid Organic-Inorganic Complementary Inverter at Low Temperature”, International Conference on Flexible and Printed Electronics International conference

    Heajeong Cheong

    International Conference on Flexible and Printed Electronics  2015.10 

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    Language:English   Presentation type:Oral presentation (general)  

    Country:Taiwan, Province of China  

  4. シリコン量子ドットからの可視エレクトロルミネッセンスの観測

    鄭 恵貞

    第53回応用物理学関係連合講演会  2006.3 

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    Venue:武蔵工業大学世田谷キャンパス  

  5. サイズ制御したシリコン量子ドットからの可視エレクトロルミネッセンス

    鄭 恵貞

    第67回応用物理学会学術講演会  2006.9 

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    Venue:上智大学四谷キャンパス  

  6. ナノ結晶シリコンドット発光デバイスの断面構造解析と窒化膜を利用した高性能化の検討

    鄭 恵貞

    第68回応用物理学会学術講演会  2007.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学札幌キャンパス  

  7. 基板窒化処理によるシリコンナノ結晶ELデバイスの高性能化

    鄭 恵貞

    第69回応用物理学会学術講演会  2008.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:中部大学三浦幸平メモリアルホール  

  8. マイクロ波加熱を利用した酸化物TFTの作製

    鄭 恵貞

    第74回応用物理学会春季学術講演会  2013.9 

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    Venue:同志社大学京田辺キャンパス  

  9. 酸化物半導体前駆体のインク化とマイクロ波焼成プロセスの開発

    鄭 恵貞

    第61回応用物理学会春季学術講演会  2014.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス  

  10. 酸化物半導体の低温化・短時間焼成プロセスの検討

    鄭 恵貞

    第75回応用物理学会秋季学術講演会  2014.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

  11. 酸化物半導体を低温溶液プロセスで作製する際のマイクロ波及び真空紫外光照射効果の確認

    鄭 恵貞

    第62回応用物理学会春季学術講演会  2015.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

  12. 低温塗布IGZOを用いた有機半導体とのハイブリッドインバータの作製

    鄭 恵貞

    第76回応用物理学会秋季学術講演会  2015.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

  13. Visible Electroluminescence from Size-Controlled Silicon Quantum Dots International conference

    Heajeong Cheong

    Conference on Laser and Electro-Optics 2006  2006.5 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:California Long beach Convention center, (USA)  

  14. Light emission from size reduced nanocrystal silicon quantum dots International conference

    Heajeong Cheong

    Conference on Laser and Electro-Optics 2007  2007.5 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:Baltimore Convention Center, Maryland, (USA)  

  15. Characterization of an Oxide Semiconductor Prepared by Microwave Sintering International conference

    Heajeong Cheong

    International Conference on Flexible and Printed Electronics  2013.9 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:Jeju island, (Korea),  

  16. Effect of Microwave annealing on oxide-semiconductor-precursor Ink International conference

    Heajeong Cheong

    International Conference of Photopolymer Science and Technology  2014.6 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chiba (JAPAN)  

  17. Low temperature fabrication of oxide semiconductor thin film transistor by photo irradiation International conference

    Heajeong Cheong

    International Conference of Science and Technology of Synthetic Metals  2014.7 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:Turku (Finland)  

  18. Fabrication of solution-processed oxide semiconductor thin film transistors at low temperature International conference

    Hea Jeong Cheong

    International Conference on Flexible and Printed Electronics,  2014.10 

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    Language:English   Presentation type:Oral presentation (general)  

  19. Investigation of Low Temperature Process of Solution Processed Oxide Semiconductor as a Thin Film Transistor International conference

    Heajeong Cheong

    International Conference of Photopolymer Science and Technology  2015.6 

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    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  20. Solution-Processed Hybrid Organic–Inorganic Complementary Thin-Film Transistor Inverter International conference

    Heajeong Cheong

    International Conference on Solid State Devices and Materials  2015.9 

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    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

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Other research activities 2

  1. CIRFE若手活性化支援事業

    2021.7
    -
    2022.3

  2. 産総研-名古屋大学アライアンス事業

    2020.11
    -
    2022.3

Research Project for Joint Research, Competitive Funding, etc. 3

  1. GaNの極性を利用したマイクロ波アニール(全く新規の独創的研究)

    2021.7 - 2022.3

    CIRFE若手活性化支援事業の研究費 

    鄭恵貞

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    Authorship:Principal investigator  Grant type:Other

    Grant amount:\2200000 ( Direct Cost: \2200000 )

  2. マイクロ波磁場加熱によるGaN薄膜への高効率イオン注入プロセスの研究開発

    2020.11 - 2022.3

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    Authorship:Principal investigator  Grant type:Other

    Grant amount:\120000 ( Direct Cost: \120000 )

  3. [Integrated GaN Active Matrix Emitters (i-GAME) International coauthorship

    2017.6

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    Authorship:Coinvestigator(s)  Grant type:Other

    Grant amount:\82500000 ( Direct Cost: \80097500 、 Indirect Cost:\2402500 )

Industrial property rights 3

  1. 東海国立大学機構

    鄭恵貞

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    Applicant:東海国立大学機構

    Application no:2022-069325  Date applied:2022.4

    Country of applicant:Domestic   Country of acquisition:Domestic

  2. 独立行政法人産業技術総合研究所

    福田伸子、鄭 恵貞

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    Application no:特願2013-263412(P2013-263412)  Date applied:2015.12

    Announcement no:特開2014-143403(P2014-143403A)  Date announced:2016.8

    Country of applicant:Domestic   Country of acquisition:Domestic

    【発明の名称】多成分系酸化物半導体の前駆体塗布液及び該塗布液を用いた多成分系酸化物半導体膜の製造方法

  3. 独立行政法人産業技術総合研究所

    植村 聖、鄭 恵貞

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    Applicant:独立行政法人産業技術総合研究所

    Application no:特願2015-10985(P2015-10985)  Date applied:2015.1

    Announcement no:特開2016-136565(P2016-136565A)  Date announced:2016.7

    Country of applicant:Domestic   Country of acquisition:Domestic

    【発明の名称】半導体製造装置および半導体製造方法

 

Teaching Experience (On-campus) 9

  1. ナノ情報デバイスセミナー1A

    2021

  2. ナノ情報デバイスセミナー2E

    2021

  3. ナノ情報デバイスセミナー2D

    2021

  4. ナノ情報デバイスセミナー2C

    2021

  5. ナノ情報デバイスセミナー2B

    2021

  6. ナノ情報デバイスセミナー2A

    2021

  7. ナノ情報デバイスセミナー1D

    2021

  8. ナノ情報デバイスセミナー1C

    2021

  9. ナノ情報デバイスセミナー1B

    2021

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