2022/04/13 更新

写真a

カノウ エミ
狩野 絵美
KANO Emi
所属
未来材料・システム研究所 附属未来エレクトロニクス集積研究センター 助教
大学院担当
大学院工学研究科
職名
助教

学位 1

  1. 博士(工学) ( 2017年3月   筑波大学 ) 

研究分野 1

  1. ナノテク・材料 / ナノ構造物理

現在の研究課題とSDGs 1

  1. 最先端電子顕微鏡法による窒化ガリウム(GaN)を中心とした窒化物半導体の物性解析

受賞 1

  1. M&M Postdoctoral Scholar Awards

    2017年7月   Microscopy & Microanalysis  

 

論文 13

  1. Enhanced activation of Mg ion-implanted GaN at decreasing annealing temperature by prolonging duration 査読有り

    Nakashima T., Kano E., Kataoka K., Arai S., Sakurai H., Narita T., Sierakowski K., Bockowski M., Nagao M., Suda J., Kachi T., Ikarashi N.

    Applied Physics Express   14 巻 ( 1 )   2021年1月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Express  

    Defect time-evolution was investigated in Mg ion-implanted GaN after annealing at 1573 K for an unprecedentedly long duration. Transmission electron microscopy directly revealed that annealing for over 30 min reduced defects inhibiting Mg activation, just like annealing at 1753 K for a short duration. The cathodoluminescence intensity of donor-acceptor pair originating from Mg acceptors increased as the duration increased, and the intensity after annealing for 60 min was higher than after short-duration annealing at 1753 K. These show the potential of lowering the annealing temperature by prolonging the duration, which would lead to practical annealing technology for Mg ion-implanted GaN.

    DOI: 10.35848/1882-0786/abd308

    Scopus

  2. Elucidation of PVD MoS2 film formation process and its structure focusing on sub-monolayer region 査読有り

    Ono Ryo, Imai Shinya, Kusama Yuta, Hamada Takuya, Hamada Masaya, Muneta Iriya, Kakushima Kuniyuki, Tsutsui Kazuo, Kano Emi, Ikarashi Nobuyuki, Wakabayashi Hitoshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   61 巻 ( SC )   2022年5月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    Sputtering enables uniform and clean deposition over a large area, which is an issue with exfoliation and chemical vapor deposition methods. On the other hand, the process of physical vapor deposition (PVD) film formation has not yet been clarified. We prepared several samples from the sub-monolayer region, and performed Raman spectroscopy, X-ray photon spectroscopy and high-angle annular dark-field scanning transmission electron microscopy. From these results, the internal stresses inherent to PVD films, the bonding states specific to sub-monolayers, and the unique film structure and the grain formation process of PVD films were discussed from the perspective of sub-monolayers. As a conclusion, we found that it is important to suppress the formation of sub-monolayers on the substrate to completely form the first layer.

    DOI: 10.35848/1347-4065/ac3fc9

    Web of Science

    Scopus

  3. Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN 査読有り

    Itoh Yuta, Watanabe Hirotaka, Ando Yuto, Kano Emi, Deki Manato, Nitta Shugo, Honda Yoshio, Tanaka Atsushi, Ikarashi Nobuyuki, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   15 巻 ( 2 )   2022年2月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Express  

    We evaluated the beam current dependence of defect formation during Mg ion implantation into GaN at a high temperature of 1100 °C with two beam currents. Photoluminescence spectra suggest that low-beam-current implantation reduced the vacancy concentration and activated Mg to a greater extent. Moreover, scanning transmission electron microscopy analysis showed that low-beam-current implantation reduced the density of Mg segregation defects with inactive Mg and increased the density of intrinsic dislocation loops, suggesting decreases in the densities of Ga and N vacancies. The formation of these defects depended on beam current, which is an important parameter for defect suppression.

    DOI: 10.35848/1882-0786/ac481b

    Web of Science

    Scopus

  4. Phase plates in the transmission electron microscope: operating principles and applications 査読有り

    Malac Marek, Hettler Simon, Hayashida Misa, Kano Emi, Egerton Ray F, Beleggia Marco

    Microscopy   70 巻 ( 1 ) 頁: 75 - 115   2020年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1093/jmicro/dfaa070

  5. Two-Dimensional CuO Inside the Supportive Bilayer Graphene Matrix 査読有り

    Kvashnin D. G., Kvashnin A. G., Kano E., Hashimoto A., Takeguchi M., Naramoto H., Sakai S., Sorokin P. B.

    The Journal of Physical Chemistry C   123 巻 ( 28 ) 頁: 17459 - 17465   2019年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1021/acs.jpcc.9b05353

  6. Charging of carbon thin films in scanning and phase-plate transmission electron microscopy.

    Hettler S, Kano E, Dries M, Gerthsen D, Pfaffmann L, Bruns M, Beleggia M, Malac M

    Ultramicroscopy   184 巻 ( Pt A ) 頁: 252-266   2018年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.ultramic.2017.09.009

    PubMed

  7. One-atom-thick 2D copper oxide clusters on graphene.

    Kano E, Kvashnin DG, Sakai S, Chernozatonskii LA, Sorokin PB, Hashimoto A, Takeguchi M

    Nanoscale   9 巻 ( 11 ) 頁: 3980-3985   2017年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1039/c6nr06874j

    PubMed

  8. Opposite effects of Cu and Pt atoms on graphene edges 査読有り

    E. Kano, A. Hashimoto, and M. Takeguchi

    Applied Physics Express   10 巻   頁: 25104   2017年1月

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    担当区分:筆頭著者   記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/APEX.10.025104

  9. Interactions between C and Cu atoms in single-layer graphene: direct observation and modelling 査読有り

    Kano Emi, Hashimoto Ayako, Kaneko Tomoaki, Tajima Nobuo, Ohno Takahisa, Takeguchi Masaki

    Nanoscale   8 巻 ( 1 ) 頁: 529 - 535   2015年11月

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    担当区分:筆頭著者   記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1039/C5NR05913E

  10. Grain structures of nitrogen-doped graphene synthesized by solid source-based chemical vapor deposition 査読有り

    Shinde Sachin M., Kano Emi, Kalita Golap, Takeguchi Masaki, Hashimoto Ayako, Tanemura Masaki

    Carbon   96 巻   頁: 448 - 453   2015年9月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.carbon.2015.09.086

  11. Direct synthesis of large area graphene on insulating substrate by gallium vapor-assisted chemical vapor deposition 査読有り

    Murakami Katsuhisa, Tanaka Shunsuke, Hirukawa Ayaka, Hiyama Takaki, Kuwajima Tomoya, Kano Emi, Takeguchi Masaki, Fujita Jun Ichi

    Applied Physics Letters   106 巻   頁: 093112   2015年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.4914114

  12. Direct observation of Pt-terminating carbyne on graphene 査読有り

    Kano Emi, Takeguchi Masaki, Fujita Jun-ichi, Hashimoto Ayako

    Carbon   80 巻   頁: 382 - 386   2014年9月

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    担当区分:筆頭著者   記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.carbon.2014.08.077

  13. In-situ observation of current-pulse-induced curling of graphene edges and carbon-cages production 査読有り

    Nishijima Takuya, Ueki Ryuichi, Kano Emi, Fujita Jun-ichi

    Japanese Journal of Applied Physics   51 巻   頁: 06FD20   2012年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/JJAP.51.06FD20

▼全件表示

講演・口頭発表等 8

  1. In-situ TEM Observation of Pt-terminating Carbyne on Graphene 国際会議

    Microscopy & Microanalysis 2014 Meeting 

  2. Etching and Mending of Graphene Edges by Cu and Pt Atoms 国際会議

    Microscopy & Microanalysis 2017 Meeting 

  3. Thermal expansion coefficient of graphene measured by electron diffraction 国際会議

    19th International Microscopy Congress 

  4. Cu atoms at the edge of graphene 国際会議

    Asian Graphene Forum 

  5. One-atom thick two dimensional copper sheets on graphene 国際会議

    Microscopical Society of Canada 43rd Annual Meeting 

  6. In situ TEM observation of Cu-doped graphene 国際会議

    The 2nd East-Asia Microscopy Conference 

  7. Cu Atoms Reknit the Graphene Structures 国際会議

    Microscopy & Microanalysis 2015 Meeting 

  8. Pt-terminating Carbyne Observed by Aberration-Corrected TEM 国際会議

    18th International Microscopy Congress 

▼全件表示

 

担当経験のある科目 (本学) 1

  1. 電気電子情報工学実験第1

    2020